Data Sheet: ACPL-32JT
Data Sheet: ACPL-32JT
Data Sheet: ACPL-32JT
Data Sheet
Lead (Pb) Free
RoHS 6 fully
compliant
RoHS 6 fully compliant options available;
-xxxE denotes a lead-free product
Description Features
Avago's Automotive 2.5 Amp Gate Drive Optocoupler • Qualified to AEC-Q100 Grade 1 Test Guidelines
features integrated flyback controller for isolated DC-DC • Automotive temperature range: -40 °C to +125 °C
converter, IGBT desaturation sensing and fault feedback, • Integrated flyback controller for isolated DC-DC
Under-Voltage LockOut (UVLO) with soft-shutdown and converter
fault feedback and active Miller current clamping. The
• Regulated Output Voltage: 20 V
fast propagation delay with excellent timing skew per-
formance enables excellent timing control and efficiency. • Peak output current: 2.5 A max.
This full feature optocoupler comes in a compact, surface- • Miller Clamp Sinking Current: 1.7 A max.
mountable SO-16 package for space-savings, is suitable • Wide Input Voltage Range: 8 V to 18 V
for traction power train inverter, power converter, battery
• Common-Mode Rejection (CMR): > 30 kV/ms at VCM =
charger, air-conditioner and oil pump motor drives in HEV
1500 V
and EV applications.
• Propagation delay: 250 ns max.
Avago R2Coupler isolation products provide reinforced
• Integrated fail-safe IGBT protection
insulation and reliability that delivers safe signal isolation
critical in automotive and high temperature industrial ap- – Desat sensing, “Soft” IGBT turn-off and Fault
plications. Feedback
– Under Voltage Lock-Out (UVLO) protection with
Functional Diagram Feedback
SW VEE2 VCC2 • High Noise Immunity
– Miller Current Clamping
OSC
Logic – Direct LED input with low input impedance and low
Control
S
noise sensitivity
R
LED2+ – Negative Gate Bias
VCC1 UVLO • SO-16 package with 8 mm clearance and creepage
COMP
/UVLO • Regulatory approvals:
Input Driver VE
/FAULT
DESAT – UL 1577, CSA
Output Driver Over
Current
– IEC/EN/DIN EN 60747-5-5
VEE1
VO
Applications
AN SSD/
• Automotive Isolated IGBT/MOSFET Inverter gate drive
SSD Control
CA
Miller Control
CLAMP • Automotive DC-DC Converter
VEE2 • AC and brushless DC motor drives
Figure 1. ACPL-32JT Functional Diagram • Hybrid and Plug-in hybrid powertrain inverter
• Uninterruptible Power Supplies (UPS)
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation, which may be induced by ESD.
Ordering Information
Option IEC/EN/DIN EN
Part Number (RoHS Compliant) Package Surface Mount Tape & Reel 60747-5-5 Quantity
ACPL-32JT -000E SO-16 X X 45 per tube
ACPL-32JT -500E X X X 850 per reel
To order, choose a part number from the Part Number column and combine with the desired option from the Option
column to form an order entry.
Example:
ACPL-32JT-500E to order product of SO-16 Surface Mount package in Tape and Reel packaging with IEC/EN/DIN EN
60747-5-5 Safety Approval that is RoHS compliant.
Option datasheets are available. Contact your Avago sales representative or authorized distributor for information.
Extended
Datecode for
+0.254 lot tracking 0.635
10.363 –0.127 (0.025) 1.270
(0.408 +0.010)
–0.005)
(0.050)
8.763± 0.254
4) (0.345± 0.010)
9°(× 9°(×
4)
3.505± 0.127
(0.138± 0.005)
0.203± 0.102
(0.008± 0.004) (0 - 8°)
STANDOFF 0.254 typ.
Dimensions in millimeters (inches) 0.635 min. (0.010)
Note: (0.025)
Lead coplanarity = 0.10 mm (0.004 inches)
Floating lead protrusion = 0.25 mm (0.010 inches) Max. 10.363± 0.254
Mold Flash on each side = 0.127 mm (0.005 inches) Max. (0.408± 0.010)
2
Product Overview Description
The ACPL-32JT (shown in Figure 1) is a highly integrated power control device that incorporates all the necessary com-
ponents for a complete, isolated IGBT gate drive circuit. It features a flyback controller for isolated DC-DC converter, a
high current gate driver, Miller current clamping, IGBT desaturation, Under-Voltage Lock-Out (UVLO) protection, and
feedback in a SO-16 package. Direct LED input allows flexible logic configuration and differential current mode driving
with low input impedance, greatly increases its noise immunity.
1 VEE1 VEE2 16
2 SW LED2+ 15
3 VCC1 DESAT 14
4 COMP VE 13
5 /UVLO VCC2 12
6 /FAULT VO 11
7 AN SSD/CLAMP 10
8 CA VEE2 9
Pin Description
Pin Name Function Pin Name Function
VEE1 Input IC common VEE2 Output IC common and negative power supply
reference to IGBT Emitter
SW Switch Output to Primary Winding LED2+ No connection, for testing only
VCC1 Input power supply DESAT Desat overcurrent sensing
COMP Compensation network for Flyback Controller VE IGBT emitter reference
/UVLO VCC2 under voltage lock out feedback VCC2 Positive power supply
/FAULT Overcurrent fault feedback VO Driver output to IGBT gate
AN Input LED anode SSD/CLAMP Soft shutdown sensing/Miller current clamping
output. (For proper functionality, this pin must be
connected to the gate of the IGBT directly or
through a current buffer.)
CA Input LED cathode VEE2 Negative power supply
3
Typical Application/Operation
Introduction to Fault Detection and Protection
The power stage of a typical three-phase inverter is sus- The alternative protection scheme of measuring IGBT
ceptible to several types of failures, most of which are current to prevent desaturation is effective if the short
potentially destructive to the power IGBTs. These failure circuit capability of the power device is known, but this
modes can be grouped into four basic categories: phase method will fail if the gate drive voltage decreases enough
or rail supply short circuits due to user misconnect or bad to only partially turn on the IGBT. By directly measuring
wiring; control signal failures due to noise or computa- the collector voltage, the ACPL-32JT limits the power
tional errors; overload conditions induced by the load; and dissipation in the IGBT, even with insufficient gate drive
component failures in the gate drive circuitry. Under any of voltage. Another more subtle advantage of the desatu-
these fault conditions, the current through the IGBTs can ration detection method is that power dissipation in the
increase rapidly, causing excessive power dissipation and IGBT is monitored, while the current sense method relies
heating. The IGBTs become damaged when the current on a preset current threshold to predict the safe limit of
load approaches the saturation current of the device, and operation. Therefore, an overly- conservative overcurrent
the collector-to-emitter voltage rises above the saturation threshold is not needed to protect the IGBT.
voltage level. The drastically increased power dissipation
Recommended Application Circuit
very quickly overheats the power device and destroys it.
To prevent damage to the drive, fault protection must be The ACPL-32JT has non-inverting gate control inputs, an
implemented to reduce or turn off the overcurrent during open collector fault, and UVLO outputs suitable for wired
a fault condition. ‘OR’ applications.
A circuit providing fast local fault detection and shutdown The recommended application circuit shown in Figure 3
is an ideal solution, but the number of required compo- illustrates a typical gate drive implementation using the
nents, board space consumed, cost, and complexity have ACPL-32JT.
until now limited its use to high performance drives. The The two supply bypass capacitors (1.0 µF or larger)
features that this circuit must have are high speed, low provide the large transient currents necessary during a
cost, low resolution, low power dissipation, and small size. switching transition. The Desat diode and 220 pF blanking
The ACPL-32JT satisfies these criteria by combining a high capacitor are the necessary external components for the
speed, high output current driver, high voltage optical fault detection circuitry. The gate resistor (10 Ω) serves to
isolation between the input and output, local IGBT de- limit gate charge current and indirectly controls the IGBT
saturation detection and shutdown, and optically isolated collector voltage rise and fall times. The open collector
fault and UVLO status feedback signal into a single 16-pin fault and UVLO outputs have a passive 10 kΩ pull-up
surface mount package. resistor and a 330 pF filtering capacitor.
The fault detection method, which the ACPL-32JT has
adopted, is to monitor the saturation (collector) voltage of
the IGBT and to trigger a local fault shutdown sequence if
the collector voltage exceeds a predetermined threshold.
A small gate discharge device slowly reduces the high
short circuit IGBT current to prevent damaging voltage
spikes. Before the dissipated energy can reach destructive
levels, the IGBT is shut off. During the off-state of the IGBT,
the fault detect circuitry is simply disabled to prevent false
‘fault’ signals.
4
Vin = 8V - 18V, 220nF 2kΩ Lp Ls
10uF
10uF
1kΩ
VEE1 VEE2
+ 5V 1uF
470kΩ SW LED2+
1kΩ
VCC1 DESAT C
22nF 330pF 220pF
10kΩ
COMP VE
10kΩ 10uF
/UVLO VCC2
10Ω VGATE
/FAULT VO G
IF 130Ω 1uF
uC
330pF AN SSD/CLAMP
330pF
CA VEE2 E
130Ω 10uF
ACPL-32JT
Figure 3. Typical gate drive circuits with Desat current sensing using ACPL-32JT
Note. Component value subject to change with varying application requirements
5
DESAT Fault Detection Blanking Time
After the IGBT is turned on, the DESAT fault detection circuitry must remain disabled for a short time period to allow
the collector voltage to fall below the DESAT threshold. This time period, called the total DESAT blanking time, is con-
trolled by the both internal DESAT blanking time tDESAT(BLANKING) and external blanking time, determined by the internal
charge current, the DESAT voltage threshold, and the external DESAT capacitor.
The total blanking time is calculated in terms of internal blanking time (tDESAT(BLANKING)), external capacitance (CBLANK),
FAULT threshold voltage (VDESAT ), and DESAT charge current (ICHG) as
tBLANK = tDESAT(BLANKING) + CBLANK × VDESAT / ICHG
IF
VO
V GATE
V CC1 V CC1_TH
V CC2
V UVLO - V UVLO+
LED I F
t UVLO_OFF t UVLO_ON
VO
/FAULT
/UVLO
t PHL_UVLO t PLH_UVLO
Figure 5. Circuit Behaviors at Power-up and Power down
6
During a Short Circuit:
1. DESAT terminal monitors IGBT’s VCE voltage.
2. When the voltage on the DESAT terminal exceeds 7 V, the IGBT gate voltage (VGATE) is slowly lowered by soft shutdown
pin SSD. Output driver Vo enters into high impedance state.
3. Output driver Vo ignores all PWM commands during mute time tDESAT(MUTE).
4. FAULT output goes Low, notifying the microcontroller of the fault condition.
5. Microcontroller takes appropriate action.
6. When tDESAT(MUTE) expires, the LED input needs to be kept Low for tDESAT(RESET) before fault condition can be cleared.
FAULT status will return to High.
7. Output starts to respond to LED input after fault condition is cleared.
t DESAT (RESET)
IF
Hi-Z
V O state
SSD/Clamp
SSD Clamp Clamp Clamp
State Hi-Z Hi-Z Hi-Z
t DESAT (90%)
VGATE
VDESAT_TH
VDESAT
t DESAT (BLANKING) t DESAT (MUTE)
V /FAULT
t DESAT (/FAULT)
7
Regulatory Information
The ACPL-32JT is approved by the following organizations:
8
Insulation and Safety Related Specifications
Parameter Symbol Value Unit Conditions
Minimum External Air Gap L(101) 8.3 mm Measured from input terminals to output terminals,
(External Clearance) shortest distance through air.
Minimum External Tracking L(102) 8.3 mm Measured from input terminals to output terminals,
(External Creepage) shortest distance path along body.
Minimum Internal Plastic Gap 0.5 mm Through insulation distance conductor to conductor,
(Internal Clearance) usually the straight line distance thickness between
the emitter and detector.
Tracking Resistance CTI > 175 V DIN IEC 112/VDE 0303 Part 1
(Comparative Tracking Index)
Isolation Group IIIa Material Group (DIN VDE 0110)
9
Recommended Operating Conditions
Parameter Symbol Min. Max. Units Notes
Operating Temperature TA -40 125 °C
Input IC Supply Voltage VCC1 8 18 V 5
Total Output IC Supply Voltage VCC2 – VEE2 18 22 V 6
Positive Output IC Supply Voltage VCC2 – VE 15 25 7
Negative Output IC Supply Voltage VEE2-VE -8 0 7
Input LED Turn on Current IF(ON) 10 16 mA
Input LED Turn off Voltage (VAN-VCA) VF(OFF) -5.5 0.8 V
PWM Duty Cycle DMAX 50 %
Peak SW current ISW_PK 1.3 A
Input pulse width tON(LED) 500 ns
Electrical Specifications
Unless otherwise specified, all Minimum/Maximum specifications are at recommended operating conditions, all
voltages at input IC are referenced to VEE1, all voltages at output IC referenced to VEE2. All typical values at TA = 25 °C,
VCC1 = 12 V, VCC2-VEE2 = 20 V, VE-VEE2 = 0 V.
Parameter Symbol Min Typ Max Units Test Conditions Fig. Note
DCDC Flyback Converter
PWM Switching Frequency fPWM 40 60 80 kHz
Maximum PWM Duty Cycle D 56 % 8
VCC1 Turn-on Threshold VCC1_TH 6 V
SW turn-on Resistance RON_SW 0.9 Ω ISW = 1.3 A 9
Regulated VCC2 Voltage VCC2 19 20 21.5 V ICOMP = 0 A 10
SW Overcurrent Protection Threshold ISW_TH 2 A
VCC2 OverVoltage Protection Threshold VOV_TH 24 V
IC Supply Current
Input Supply Current ICC1 4.0 6.1 mA 11
Output Low Supply Current ICC2L 10.5 13.2 mA IF = 0 mA 12
VCC2 = 20 V
Output High Supply Current ICC2H 10.6 13.6 mA IF = 10 mA 12
VCC2 = 20 V
Logic Input and Output
LED Forward Voltage (VAN – VCA) VF 1.25 1.55 1.85 V IF = 10 mA 13
LED Reverse Breakdown Voltage (VCA – VAN) VBR 6 V IF = -10 µA
LED Input Capacitance CIN 90 pF
LED Turn-on Current Threshold Low-to-High ITH+ 2.4 6.6 mA VO = 5 V 14
LED Turn-on Current Threshold High-to-Low ITH- 1.8 6.4 mA VO = 5 V 14
LED Turn-on Current Hysteresis ITH_HYS 0.6 mA
FAULT Logic Low Output Current IFAULT_L 4.0 9.0 mA V/FAULT = 0.4 V
FAULT Logic High Output Current IFAULT_H 20 µA V/FAULT = 5 V
UVLO Logic Low Output Current IUVLO_L 4.0 9.0 mA V/UVLO = 0.4 V
UVLO Logic High Output Current IUVLO_H 20 µA V/UVLO = 5 V
Continued on next page...
10
Electrical Specifications (continued)
Unless otherwise specified, all Minimum/Maximum specifications are at recommended operating conditions, all
voltages at input IC are referenced to VEE1, all voltages at output IC referenced to VEE2. All typical values at TA = 25 °C,
VCC1 = 12 V, VCC2-VEE2 = 20 V, VE-VEE2 = 0 V.
Parameter Symbol Min Typ Max Units Test Conditions Fig. Note
Gate Driver
High Level Output Current IOH -1.9 -0.75 A VO = VCC2 - 3 V 15 4
Low Level Output Current IOL 1.0 2.3 A VO = VEE2 + 2.5 V 16 4
High Level Output Voltage VOH VCC2–0.5 VCC2–0.15 V IO = -100 mA 8,9,10
Low Level Output Voltage VOL 0.1 0.5 V IO = 100 mA
Vsource to High Level Output tPLH 50 120 250 ns Vsource = 5 V 17,22 11
Propagation Delay Time Rf = 260 Ω, Rg = 10 Ω
Vsource to Low Level Output tPHL 50 160 250 ns Cload = 10 nF 17,22 12
Propagation Delay Time f = 10 kHz
Duty Cycle = 50%
Pulse Width Distortion PWD -40 40 140 ns 13,14
Dead Time Distortion DTD -160 -40 60 ns 14,15
(tPLH-tPHL)
10% to 90% Rise Time tR 70 ns
90% to 10% Fall Time tF 35 ns
Output High Level Common |CMH| 30 >50 kV/μs TA=25 °C, IF = 10 mA, 23 16
Mode Transient Immunity VCM =1500 V
Output Low Level Common Mode |CML| 30 >50 kV/μs TA = 25 °C, IF = 0 mA, 24 17
Transient Immunity VCM=1500 V
Active Miller Clamp and Soft Shutdown
Low Level Soft Shutdown ISSD 22 35 55 mA VSSD – VEE2 = 14 V 18
Current During Fault Condition
Clamp Threshold Voltage V TH_CLAMP 2.0 3.0 V
Clamp Low Level Sinking ICLAMP 0.5 2.0 A VCLAMP = VEE2 + 2.5 V
Current
VCC2 UVLO Protection (UVLO voltage VUVLO reference to VE)
VCC2 UVLO Threshold Low to High VUVLO+ 10.9 12.5 13.8 V VO > 5 V 10,18
VCC2 UVLO Threshold High to Low VUVLO- 10.0 11.3 12.8 V VO < 5 V 10,19
VCC2 UVLO Hysteresis VUVLO_HYS 1.2 V 10
VCC2 to UVLO High Delay tPLH_UVLO 15 µs 20
VCC2 to UVLO Low Delay tPHL_UVLO 10.7 µs 21
VCC2 UVLO to VOUT High Delay tUVLO_ON 5.3 µs 22
VCC2 UVLO to VOUT Low Delay tUVLO_OFF 1.1 µs 23
Continued on next page...
11
Electrical Specifications (continued)
Unless otherwise specified, all Minimum/Maximum specifications are at recommended operating conditions, all
voltages at input IC are referenced to VEE1, all voltages at output IC referenced to VEE2. All typical values at TA = 25 °C,
VCC1 = 12 V, VCC2-VEE2 = 20 V, VE-VEE2 = 0 V.
Parameter Symbol Min Typ Max Units Test Conditions Fig. Note
Desaturation Protection (Desat voltage VDESAT reference to VE)
Desat Sensing Threshold VDESAT 6.2 7.0 7.8 V 19 10
Desat Charging Current ICHG -1.1 -0.9 -0.65 mA VDESAT = 2 V 20
Desat Discharging Current IDSCHG 20 53 mA VDESAT = 8 V 21
VCC2 during fault condition VCC2(FAULT) 19 V
ICC2 during fault condition ICC2(FAULT) 11.6 mA VCC2 = 20 V
Internal Desat Blanking Time tDESAT(BLANKING) 0.3 0.6 1.1 µs CSSD=10 nF 24
Desat Sense to 90% SSD Delay tDESAT(90%) 0.6 µs 25
Desat Sense to 10% SSD Delay tDESAT(10%) 6.0 µs 26
Desat to Low Level /FAULT tDESAT(/FAULT) 7.0 µs 27
Signal Delay
Output Mute Time due to Desat tDESAT(MUTE) 2.3 3.2 ms 28
Time for Input Kept Low tDESAT(RESET) 2.3 3.2 ms 29
Before Fault Reset to High
Package Characteristics
Parameter Symbol Min. Typ. Max. Units Test Conditions Note
Input-Output Momentary VISO 5000 VRMS RH < 50%, t = 1 min. TA = 25 °C 30, 31,
Withstand Voltage 32
Resistance (Input-Output) RI-O 1014 Ω VI-O = 500 VDC 32
Capacitance (Input-Output) CI-O 1.3 pF f = 1 MHz 32
Thermal coefficient between AEI 35.4 °C/W
LED and input IC
Thermal coefficient between AEO 33.1 °C/W
LED and output IC
Thermal coefficient between AIO 25.6 °C/W
input IC and output IC
Thermal coefficient between AEA 176.1 °C/W
LED and Ambient
Thermal coefficient between AIA 92 °C/W
input IC and Ambient
Thermal coefficient between AOA 76.7 °C/W
output IC and Ambient
12
Notes:
1. Output IC power dissipation is derated linearly above 100 °C from 580 mW to 260 mW at 125 °C.
2. This supply is optional. Required only when negative gate drive is implemented.
3. Maximum 500 ns pulse width if peak VDESAT > 10 V.
4. Maximum pulse width = 1 μs, maximum duty cycle = 1%.
5. In most applications VCC1 will be powered up first (before VCC2) and powered down last (after VCC2). This is desirable for maintaining control of the
IGBT gate. In applications where VCC2 is powered up first, it is important to ensure that input remains low until VCC1 reaches the proper operating
voltage to avoid any momentary instability at the output during VCC1 ramp-up or ramp-down.
6. 15 V is the recommended minimum operating positive supply voltage (VCC2 - VE) to ensure adequate margin in excess of the maximum VUVLO+
threshold of 13.5 V.
7. If DC-DC controller is not used for powering output IC.
8. For High Level Output Voltage testing, VOH is measured with a DC load current. When driving capacitive loads, VOH will approach VCC as IOH
approaches zero.
9. Maximum pulse width = 1.0 ms, maximum duty cycle = 20%.
10. Once VOUT of the ACPL-32JT is allowed to go high (VCC2 - VE > VUVLO), the DESAT detection feature of the ACPL-32JT will be the primary source of
IGBT protection. UVLO is needed to ensure DESAT is functional. Once VCC2 exceeds VUVLO+ threshold, DESAT will remain functional until VCC2 is
below VUVLO- threshold. Thus, the DESAT detection and UVLO features of the ACPL-32JT work in conjunction to ensure constant IGBT protection.
11. tPLH is defined as propagation delay from 50% of LED input IF to 50% of High level output.
12. tPHL is defined as propagation delay from 50% of LED input IF to 50% of Low level output.
13. Pulse Width Distortion (PWD) is defined as (tPHL – tPLH) of any given unit.
14. As measured from IF to VO.
15. Dead Time Distortion (DTD) is defined as (tPLH - tPHL) between any two ACPL-32JT parts under the same test conditions.
16. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output
will remain in the high state (i.e., VO > 15 V). A 330 pF and a 10 kΩ pull-up resistor is needed in fault and UVLO detection mode.
17. Common mode transient immunity in the low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output
will remain in a low state (i.e., VO < 1.0 V). A 330 pF and a 10 kΩ pull-up resistor is needed in fault and UVLO detection mode.
18. This is the “increasing” (i.e. turn-on or “positive going” direction) of VCC2 - VE.
19. This is the “decreasing” (i.e. turn-off or “negative going” direction) of VCC2 - VE.
20. The delay time when VCC2 exceeds UVLO+ threshold to UVLO positive-going edge.
21. The delay time when VCC2 falls below UVLO- threshold to UVLO negative-going edge.
22. The delay time when VCC2 exceeds UVLO+ threshold to 50% of High level output.
23. The delay time when VCC2 falls below UVLO- threshold to 50% of Low level output.
24. The delay time for ACPL-32JT to respond to a DESAT fault condition without any external DESAT capacitor.
25. The amount of time from when DESAT threshold is exceeded to 90% of VGATE at mentioned test conditions.
26. The amount of time from when DESAT threshold is exceeded to 10% of VGATE at mentioned test conditions.
27. The amount of time from when DESAT threshold is exceeded to FAULT output Low – 50% of VCC1 voltage.
28. The amount of time when DESAT threshold is exceeded, Output is mute to LED input.
29. The amount of time when DESAT Mute time is expired, LED input must be kept Low for Fault status to return to High.
30. In accordance with UL1577, each optocoupler is proof-tested by applying an insulation test voltage ≥ 6000 VRMS for 1 second.
31. The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous voltage
rating. For the continuous voltage rating, refer to your equipment level safety specification or IEC/EN/DIN EN 60747-5-5 Insulation Characteristics
Table.
32. Device considered a two-terminal device: pins 1 - 8 shorted together and pins 9 - 16 shorted together.
33. Max 34V, 10 pulses, 400ms pulse width, 60s intervals.
Thermal Characteristics are based on the ground planes layout of the evaluation PCB.
60 mm 60 mm
VEE1
VEE1
VEE2
40 mm
40 mm
VEE2
VEE1
PCB top side PCB bottom side
13
Notes on Thermal Calculation
Application and environmental design for ACPL-32JT needs to ensure that the junction temperature of the internal
ICs and LED within the gate driver optocoupler does not exceed 150 °C. The following equations are to calculate the
maximum power dissipation and the corresponding effect on junction temperatures.
LED Junction Temperature = AEA*PE + AEI*PI + AEO*PO + TA
Input IC Junction Temperature = AEI*PE + AIA*PI + AIO*PO + TA
Output IC Junction Temperature = AEO*PE + AIO*PI + AOA*PO + TA
PE - LED Power Dissipation
PI - Input IC Power Dissipation
PO - Output IC Power Dissipation
Calculation of LED Power Dissipation
LED Power Dissipation, PE = IF(LED) (Recommended Max) * VF(LED) (125 °C) * Duty Cycle
Example: PE = 16 mA * 1.25 * 50% duty cycle = 10 mW
Calculation of Input IC Power Dissipation
Input IC Power Dissipation, PI = PI(Static) + PI(SW)
PI(Static) - static power dissipated by the input IC
PI(SW) - power dissipated in the SW pin due to switching current of primary winding of transformer. It is calculated based
on averaging switching current and turn-on resistance of SW.
where
PI(Static) = Icc1 * Vcc1
PI(SW) = Isw(avg)2 * Ron_sw(125 °C) = (ISW_PK/2 * Dmax * Vin_min/Vin)2 * Ron_sw(125 °C)
The highest input power dissipation is at minimum Vin, where the average current of SW pin is highest, Vin = VCC1=
VIN(min) = 8 V.
PI(Static) = 6 mA * 8 V = 48 mW
PI(SW) = (1.3 A/2 * 50% * 8V/8V )2 * 0.9 Ω = 95 mW
PI = PI(Static) + PI(SW) = 48 mW + 95 mW =143 mW
Calculation of Output IC Power Dissipation
Output IC Power Dissipation, PO = VCC2 (Recommended Max) * ICC2 (Max) + PHS + PLS
PHS - High Side Switching Power Dissipation
PLS - Low Side Switching Power Dissipation
PHS = (VCC2 * QG * fPWM) * ROH(MAX)/(ROH(MAX) + RGH)/2
PLS = (VCC2 * QG * fPWM) * ROL(MAX)/(ROL(MAX) + RGL)/2
QG – IGBT Gate Charge at Supply Voltage
fPWM - LED Switching Frequency
ROH(MAX) – Maximum High Side Output Impedance - VOH(MIN)/IOH(MIN)
RGH - Gate Charging Resistance
ROL(MAX) – Maximum Low Side Output Impedance - VOL(MIN)/IOL(MIN)
RGL - Gate Discharging Resistance
14
Example:
ROH(MAX) = (VCC2-VOH(MIN))/IOH(MIN) = 3.0 V / 0.75 A = 4.0 Ω
ROL(MAX) = VOL(MIN)/IOL(MIN) = 2.5 V / 1 A = 2.5 Ω
PHS =(20 V * 1 µC * 10 kHz) * 4.0 Ω / (4.0 Ω + 10 Ω) / 2 = 28.5 mW
PLS =(20 V * 1 µC * 10 kHz) * 2.5 Ω / (2.5 Ω + 10 Ω) / 2 = 20 mW
PO = 20 V * 13.6 mA + 25 mW + 20 mW = 320.5 mW
Calculation of Junction Temperature
LED Junction Temperature = 176.1 °C/W * 10 mW + 35.4 °C/W * 143 mW + 33.1 °C/W * 320.5 mW + TA = 17.4 °C + TA
Input IC Junction Temperature = 35.4 °C/W * 10 mW + 92 °C/W * 143 mW + 25.6 °C/W * 320.5 mW + TA = 21.7 °C + TA
Output IC Junction Temperature = 33.1 °C/W * 10 mW + 25.6 °C/W * 143 mW + 76.7 °C/W * 320.5 mW + TA = 28.5 °C + TA
15
60 1.6
40
1
30 0.8
0.6
20
0.4
10
0.2
0 0
0 1 2 3 4 - 50 - 25 0 25 50 75 100 125
VCOMP - COMPENSATION VOLTAGE - V TA - TEMPERATURE - °C
Figure 8. PWM Duty Cycle vs. VCOMP Figure 9. RON_SW vs. temperature
10 6
-40 °C
ICOMP - COMPENSATION CURRENT - µA
-15 0
10 15 20 25 - 50 - 25 0 25 50 75 100 125
VCC - SUPPLY VOLTAGE - V TA - TEMPERATURE - °C
Figure 10. ICOMP vs. Supply Voltage Figure 11. ICC1 vs. temperature
11.1 100.00
ICC2H
ICC2 - OUTPUT SUPPLY CURRENT - mA
11 ICC2L Ta = 25 °C
IF - FORWARD CURRENT - mA
10.9 10.00
10.8
1.00
10.7
10.6
0.10
10.5
10.4 0.01
- 50 - 25 0 25 50 75 100 125 1.2 1.3 1.4 1.5 1.6
TA - TEMPERATURE - °C VF - FORWARD VOLTAGE - V
Figure 12. ICC2 vs. temperature Figure 13. IF vs. VF
16
4 20
- 40 °C
ITH+
ITH - LED CURRENT THRESHOLD - mA
3.5 25 °C
2.5 16
2
14
1.5
1 12
- 50 - 25 0 25 50 75 100 125 0 1 2 3 4 5
TA - TEMPERATURE - °C IOH - OUTPUT HIGH CURRENT - A
Figure 14. ITH vs. temperature Figure 15. VOH vs. IOH
8 250
-40 °C TPLH
7 25 °C TPHL
VOL - OUTPUT LOW VOLTAGE - V
200
TP - PROPAGATION DELAY - ns
6 125 °C
5
150
4
3 100
2
50
1
0 0
0.00 1.00 2.00 3.00 4.00 5.00 -50 - 25 0 25 50 75 100 125
IOL - OUTPUT LOW CURRENT - A TA - TEMPERATURE - °C
Figure 16. VOL vs. IOL Figure 17. tP vs. temperature
45 7.5
VDESAT - DESAT SENSING THRESHOLD - V
7.4
ISSD - SOFT SHUTDOWN CURRENT - mA
40
7.3
35 7.2
7.1
30 7
6.9
25
6.8
-40 °C
20 6.7
25 °C
125 °C 6.6
15 6.5
0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125
VSSD - CLAMP VOLTAGE - V TA - TEMPERATURE - °C
Figure 18. ISSD vs. VSSD Figure 19. VDESAT Threshold vs. temperature
17
-0.7 70
-0.75 60
-0.8 55
50
-0.85 45
40
-0.9 35
-0.95 30
25
-1 20
- 50 - 25 0 25 50 75 100 125 - 50 - 25 0 25 50 75 100 125
TA - TEMPERATURE - °C TA - TEMPERATURE - °C
Figure 20. ICHG vs. temperature Figure 21. IDCHG vs. temperature
VEE1 VEE2
SW LED2+
VCC1 DESAT
VE Vsource
COMP
/UVLO VCC2
0.1 µF 10 Ω tPLH
VO 50% tPHL
/FAULT
+
260 Ω 20 V
Signal Source Rg _ VO
AN Vo Cload
Rf SSD/CLAMP 10 nF
5V
Vsource
0V CA VEE2
SW LED2+ SW LED2+
_ _
20 V 20 V
VCC1 DESAT 0.1 µF + VCC1 DESAT
0.1 µF
+
COMP VE COMP VE
/FAULT VO /FAULT VO
130R 10R 130R
10R
+ AN SSD/CLAMP AN SSD/CLAMP
5V 10 nF 10 nF
- CA VEE2 CA VEE2
130R 130R
+ - + -
High Voltage Pulse High Voltage Pulse
V CM = 1500 V V CM = 1500 V
Figure 23. CMR Vo High Test Circuit Figure 24. CMR Vo Low Test Circuit
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Data subject to change. Copyright © 2005-2015 Avago Technologies. All rights reserved.
AV02-4256EN - March 23, 2015