The RF Line: Semiconductor Technical Data
The RF Line: Semiconductor Technical Data
The RF Line
Designed specifically for the United States digital 3.0 W, mobile radio. The
MHW927A / B are capable of wide power range control, operate from a 12.5 V *Motorola Preferred Device
supply and require 1.0 mW of RF input power.
• MHW927A Operates from a 9.5 Volt Bias Supply (VB)
MHW927B Operates from a 8.0 Volt Bias Supply (VB) 6.0 W
824 to 849 MHz
• Specified 12.5 Volt Characteristics for MHW927A/B: RF LINEAR
RF Input Power — 1.0 mW (0 dBm) Max POWER AMPLIFIERS
RF Output Power — 6.0 W
Power Gain — 40 dB Typ
Harmonics — – 30 dBc Max @ 2 f0
• Linearity (IMD) — – 29 dBc Max for 3rd Order; – 34 dBc Max for 5th Order
• New Biasing and Control Techniques Providing Dynamic Range and Control Circuit
Bandwidth Ideal for USDC
• 50 Ω Input / Output Impedances
• Guaranteed Stability and Ruggedness
MAXIMUM RATINGS (Recommended Values for Safe Operation — Not Guaranteed Performance)
Rating Symbol Value Unit
DC Supply Voltage VS2, VS3 16.5 Vdc
DC Bias Voltage VB 10 Vdc
RF Input Power MHW927A, B Pin 3.0 mW
RF Output Power Pout 13 W
Operating Case Temperature Range TC – 30 to +100 °C
Storage Temperature Range Tstg – 30 to +100 °C
ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc; VB = 9.5 Vdc (MHW927A); VB = 8.0 Vdc (MHW927B); Pin ≤ 1.0 mW
(MHW927A / B); TC = +25°C, 50 ohm system, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Frequency Range BW 824 — 849 MHz
Input Power (Pout = 6.0 W) (1) Pin — — 1.0 mW
Efficiency (Pout = 6.0 W) (1) η1 28 30 — %
Efficiency, Two Tone (Pout (Avg.) = 6.0 W; f1 & f2 10 kHz apart) (1) η2 28 30 — %
Input VSWR (Pout = 6.0 W) (1) VSWRin — — 2.5:1 —
Harmonics (Pout = 6.0 W) (1) 2 f0 — — — – 30 dBc
3 f0 — — – 45
Noise Power (In 30 kHz Bandwidth, 45 MHz Above f0; TC = +25°C to TC = +100°C; — — — – 82 dBm
Pout = 6.0 W) (1)
Linearity (Pout (Avg.) = 6.0 W; f1 & f2 are 10 kHz apart) (1) 3rd Order IMD — — – 31 – 29 dBc
5th Order IMD — – 36 – 34
Load Mismatch Stress (VS2 = VS3 = 16 Vdc; Pout = 12.5 W; Pulsed at 50% Duty ψ No Degradation
Cycle; Load VSWR = 20:1, All Phase Angles At Frequency of Test) (1) In Output Power Between
Before and After Test
Stability (VS2 = VS3 = 10 to 16 Vdc; Pout = 0.012 to 12 W; — All Spurious Outputs
Load VSWR = 4:1, All Phase Angles At Frequency of Test) (1) More Than 70 dB
Below Desired Signal
NOTE:
1. Adjust Pin for Specified Pout.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 6
OUTPUT
1 2 3 4 5 POWER SPECTRUM
INPUT* REFLECTED METER ANALYZER
POWER POWER
METER METER TEST FIXTURE
C1 C4 C2 C5 C6 C3
Z1 Z2
+ + +
20 dB
C7 C8 C9 ATTENUATOR
RF RF
IN OUT
VBIAS VS2 VS3
20 dB DUAL DIRECTIONAL (TYPICAL)(1) 12.5 V 12.5 V 20 dB DUAL DIRECTIONAL
COUPLER @ 160 mA @ 1.25 mA COUPLER
(TYPICAL) (TYPICAL)
POWER
10 dB 50 Ω TERMINATION
MINIMUM TERMINATION
ATTENUATION
6 dB PAD
RF SIGNAL
90 DEGREE GENERATOR
HYBRID CIRCULATORS
JUNCTION
RF SIGNAL
GENERATOR
6 dB PAD
50 Ω
TERMINATION C1, 2, 3 — 0.018 µF
C4, 5, 6 — 0.1 µF
C7, 8, 9 — 1.0 µF (tant.)(tant.)
Z1, Z2 — 50 Ω MICROSTRIP
(1) V
BIAS = 9.5 V @ 140 mA (MHW927A) or 8.0 V @ 140 mA (MHW927B)
100
η, EFFICIENCY (%)
0.60 η 33
32
Pin, INPUT POWER (mW)
VSWR in
1.2 VB = 9.5 V
VS2 = VS3 = 12.5 V
0.40 1.1 0.1
815 825 835 845 855 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
f, FREQUENCY (MHz) Pin, INPUT POWER (mW)
Figure 2. Input Power, Efficiency and VSWR Figure 3. Output Power versus Input Power
versus Frequency
11 16
10 14
Po = 6.0 W @ TC = 25°C
Po, OUTPUT POWER (W)
Po, OUTPUT POWER (W)
9 VB = 9.5 V 12
VS2 = VS3 = 12.5 V
8 10 f = 824 MHz
7 8
849 MHz
6 6
f = 849 MHz Pin = 1.0 mW
5 4
VB = 9.5 V
4 2 VS2 = VS3 = 12.5 V
824 MHz
3 0
– 40 0 40 80 120 –4 0 40 80 12
0 0
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 4. Output Power versus Case Temperature Figure 5. Output Power versus Case
Temperature at Maximum Input Power
–2 –2
IMD, INTERMODULATION DISTORTION (dBc)
0 0
–3 –3
0 0
–4 IM3 –4 IM3
0 0
–5 –5
0 IM5 0
–6 –6 IM5
0 0
IM7 IM7
– 70 f1 = 824.00 MHz – 70 f1 = 849.00 MHz
f2 = 824.01 MHz f2 = 849.01 MHz
– 80 VB = 9.5 V – 80 VB = 9.5 V
VS2 = VS3 = 12.5 V VS2 = VS3 = 12.5 V
– 90 – 90
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
Po, OUTPUT POWER (W) Po, OUTPUT POWER (W)
Figure 6. Intermodulation versus Output Power Figure 7. Intermodulation versus Output Power
1.1 34 100.0
η , EFFICIENCY (%)
Po = 6.0 W
1.0 VB = 8.0 V 33
VS2 = VS3 = 12.5 V
η f = 824 MHz
Pin, INPUT POWER (mW)
0.9 32
0.7 30
0.6 Pin
1.0 VB = 8.0 V
0.5 1.6 VS2 = VS3 = 12.5 V
VSWR in
VSWRin
0.4 1.4
Figure 8. Input Power, Efficiency and VSWR Figure 9. Output Power versus Input Power
versus Frequency
11 13
9 11
Pout = 6.0 W @ TC = 25°C Pin = 1.0 mW
8 VB = 8.0 V 10 VB = 8.0 V
VS2 = VS3 = 12.5 V VS2 = VS3 = 12.5 V
7 9
6 8
f = 824 MHz f = 824 MHz
5 7
849 MHz
4 6
849 MHz
3 5
– 40 0 40 80 120 – 40 0 40 80 120
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 10. Output Power versus Case Temperature Figure 11. Output Power versus
Case Temperature at Maximum Input Power
– 20 – 20
IMD, INTERMODULATION DISTORTION (dBc)
– 30 – 30
IM3 IM3
– 40 – 40
– 50 – 50
IM5
IM5
– 60 – 60
IM7
f 1= 824.00 MHz IM7 f 1= 849.00 MHz
– 70 – 70
f2 = 824.01 MHz f2 = 849.01 MHz
– 80 VB = 8.0 V – 80 VB = 8.0 V
VS2 = VS3 = 12.5 V VS2 = VS3 = 12.5 V
– 90 – 90
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 1 0.01 0.02 0.05 0.1 0.2 0.5 0.1 2 5 1
Po, OUTPUT POWER (W) 0 Po, OUTPUT POWER (W) 0
Figure 12. Intermodulation versus Output Power Figure 13. Intermodulation versus Output Power
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
–A– Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
G 3. DIMENSION F TO CENTER OF LEADS.
0.13 (0.005) M T A M B INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 2.190 2.210 55.63 56.13
B 1.395 1.415 35.44 35.94
R –S– C 0.355 0.380 9.02 9.65
D 0.018 0.022 0.46 0.55
J 1 2 34 5 E 0.120 0.135 3.05 3.42
F 0.164 BSC 4.16 BSC
K G 1.900 BSC 48.26 BSC
H 1.700 BSC 43.18 BSC
X Q 2 PL J 0.345 0.385 8.77 9.77
W K 0.225 ––– 5.72 –––
D 5 PL 0.13 (0.005) M T S M
N 1.600 BSC 40.64 BSC
0.13 (0.005) M T Z V P 0.008 0.012 0.21 0.30
N Q 0.150 0.160 3.81 4.06
R 0.690 0.770 17.53 19.55
H S 0.595 0.615 15.12 15.62
–Z– V 0.700 BSC 17.78 BSC
W 0.600 BSC 15.24 BSC
X 0.500 BSC 12.70 BSC
STYLE 1:
C PIN 1. RF INPUT
2. VBIAS (8.0 V)
–T– 3. VCC2 (12.5 V)
SEATING P
PLANE
5 PL E 4. VCC3 (12.5 V)
F 5. RF OUTPUT
0.13 (0.005) M T
CASE 301AA–01
ISSUE O
*MHW927A/D*
MHW927A MHW927B ◊ MHW927A/D
MOTOROLA RF DEVICE DATA
6
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