TCET1100/ TCET1100G

Vishay Semiconductors

Optocoupler, Phototransistor Output, High Temperature

Features
• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• Low temperature coefficient of CTR C E
• CTR offered in 9 groups 4 3

• Reinforced Isolation provides circuit protection

against electrical shock (Safety Class II)
• Lead-free component
e3 Pb
1 2
• Component in accordance to RoHS 2002/95/EC V
D E
A C
and WEEE 2002/96/EC 17197_1
C Pb-free

Agency Approvals Pollution degree 2 (DIN/VDE 0110 / resp. IEC 60664)

• UL1577, File No. E76222 System Code U, Double Climatic classification 55/100/21 (IEC 60068 part 1)
Protection Rated impulse voltage (transient overvoltage)
• CSA 22.2 bulletin 5A, Double Protection VIOTM = 8 kV peak
• BSI: EN 60065:2002, EN 60950:2000 Isolation test voltage (partial discharge test voltage)
Certificate No. 7081 and 7402 Vpd = 1.6 kV
• DIN EN 60747-5-2 (VDE0884) Rated isolation voltage (RMS includes DC)
DIN EN 60747-5-5 pending VIOWM = 600 VRMS (848 V peak)
• FIMKO Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
Applications Thickness through insulation ≥ 0.75 mm
Switch-mode power supplies Internal creepage distance > 4 mm
Line receiver Creepage current resistance according to VDE 0303/
IEC 112 Comparative Tracking Index:
Computer peripheral interface
CTI ≥ 175
Microprocessor system interface
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced iso- VDE Standards
lation): These couplers perform safety functions according to the following
• For appl. class I - IV at mains voltage ≤ 300 V equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
• For appl. class I - III at mains voltage ≤ 600 V accord-
pending
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-
5-5 pending, table 2. Optocoupler for electrical safety requirements
IEC 60950/EN 60950
Description Office machines (applied for reinforced isolation for mains voltage
≤ 400 VRMS)
The TCET110. consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode VDE 0804
in a 4-lead plastic dual inline package. Telecommunication apparatus and data processing
The elements are mounted on one leadframe using a IEC 60065
coplanar technique, providing a fixed distance Safety for mains-operated electronic and related household appa-
between input and output for highest safety require- ratus
ments.
Isolation materials according to UL94-VO

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Order Information
Part Remarks
TCET1100 CTR 50 - 600 %, DIP-4
TCET1101 CTR 40 - 80 %, DIP-4
TCET1102 CTR 63 - 125 %, DIP-4
TCET1103 CTR 100 - 200 %, DIP-4
TCET1104 CTR 160 - 320 %, DIP-4
TCET1105 CTR 50 - 150 %, DIP-4
TCET1106 CTR 100 - 300 %, DIP-4
TCET1107 CTR 80 - 160 %, DIP-4
TCET1108 CTR 130 - 260 %, DIP-4
TCET1109 CTR 200 - 400 %, DIP-4
TCET1100G CTR 50 - 600 %, DIP-4
TCET1101G CTR 40 - 80 %, DIP-4
TCET1102G CTR 63 - 125 %, DIP-4
TCET1103G CTR 100 - 200 %, DIP-4
TCET1104G CTR 160 - 320 %, DIP-4
TCET1105G CTR 50 - 150 %, DIP-4
TCET1106G CTR 100 - 300 %, DIP-4
TCET1107G CTR 80 - 160 %, DIP-4
TCET1108G CTR 130 - 260 %, DIP-4
TCET1109G CTR 200 - 400 %, DIP-4

G = Leadform 10.16 mm; G is not marked on the body

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp ≤ 10 µs IFSM 1.5 A
Power dissipation Pdiss 100 mW
Junction temperature Tj 125 °C

Output
Parameter Test condition Symbol Value Unit
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA
Power dissipation Pdiss 150 mW
Junction temperature Tj 125 °C

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Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage (RMS) t = 1 min VISO 5000 VRMS
Total power dissipation Ptot 250 mW
Operating ambient temperature Tamb - 40 to + 100 °C
range
Storage temperature range Tstg - 55 to + 125 °C
Soldering temperature 2 mm from case t ≤ 10 s Tsld 260 °C

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 50 mA VF 1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz Cj 50 pF

Output
Parameter Test condition Symbol Min Typ. Max Unit
Collector emitter voltage IC = 1 mA VCEO 70 V
Emitter collector voltage IE = 100 µA VECO 7 V
Collector-emitter cut-off current VCE = 20 V, If = 0, E = 0 ICEO 10 100 nA

Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Collector emitter saturation IF = 10 mA, IC = 1 mA VCEsat 0.3 V
voltage
Cut-off frequency VCE = 5 V, IF = 10 mA, fc 110 kHz
RL = 100 Ω
Coupling capacitance f = 1 MHz Ck 0.3 pF

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Current Transfer Ratio

Parameter Test condition Part Symbol Min Typ. Max Unit
IC/IF VCE = 5 V, IF = 1 mA TCET1100 CTR 13 30 %
TCET1100G
TCET1102 CTR 22 45 %
TCET1102G
TCET1103 CTR 34 70 %
TCET1103G
TCET1104 CTR 56 90 %
TCET1104G
VCE = 5 V, IF = 5 mA TCET1100 CTR 50 600 %
TCET1100G
TCET1105 CTR 50 150 %
TCET1105G
TCET1106 CTR 100 300 %
TCET1106G
TCET1107 CTR 80 160 %
TCET1107G
TCET1108 CTR 130 260 %
TCET1108G
TCET1109 CTR 200 400 %
TCET1109G
VCE = 5 V, IF = 10 mA TCET1100 CTR 40 80 %
TCET1100G
TCET1102 CTR 63 125 %
TCET1102G
TCET1103 CTR 100 200 %
TCET1103G
TCET1104 CTR 160 320 %
TCET1104G

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward current IF 130 mA

Output
Parameter Test condition Symbol Min Typ. Max Unit
Power dissipation Pdiss 265 mW

Coupler
Parameter Test condition Symbol Min Typ. Max Unit
Rated impulse voltage VIOTM 8 kV
Safety temperature Tsi 150 °C

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Vishay Semiconductors

Insulation Rated Parameters

Parameter Test condition Symbol Min Typ. Max Unit
Partial discharge test voltage - 100 %, ttest = 1 s Vpd 1.6 kV
Routine test
Partial discharge test voltage - tTr = 60 s, ttest = 10 s, VIOTM 8 kV
Lot test (sample test) (see figure 2)
Vpd 1.3 kV
Insulation resistance VIO = 500 V RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 10 11 Ω
VIO = 500 V, Tamb = 150 °C RIO 109 Ω
(construction test only)

VIOTM
300 t1, t2 = 1 to 10 s
Ptot – Total Power Dissipation ( mW )

t3, t4 = 1 s
250 Phototransistor ttest = 10 s
Psi ( mW )
tstres = 12 s
200 VPd

150 VIOWM
VIORM

100

50 IR-Diode
Isi ( mA ) 0
t3 ttest t4
0 t1 tTr = 60 s t2 tstres
13930
0 25 50 75 100 125 150
t
94 9182 Tsi – Safety Temperature ( °C )

Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

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Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 Ω td 3.0 µs
(see figure 3)
Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω tr 3.0 µs
(see figure 3)
Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω ton 6.0 µs
(see figure 3)
Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω ts 0.3 µs
(see figure 3)
Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω tf 4.7 µs
(see figure 3)
Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω toff 5.0 µs
(see figure 3)
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ ton 9.0 µs
(see figure 4)
Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ toff 10.0 µs
(see figure 4)

IF 96 11698

IF IF +5V 0
0 tp t
IC = 2 mA; adjusted through IC
input amplitude 100%
90%
RG = 50 W
tp
= 0.01
T
tp = 50 Ps
Channel I 10%
Oscilloscope 0
RL = 1 MW tr
Channel II td t
CL = 20 pF ts tf
50 W 100 W ton toff
tp pulse duration ts storage time
td delay time tf fall time
95 10804 tr rise time toff (= ts + tf) turn-off time
ton (= td + tr) turn-on time

Figure 3. Test circuit, non-saturated operation Figure 5. Switching Times

IF IF = 10 mA +5V
0
IC

RG = 50 Ω
tp
= 0.01
T
tp = 50 µs
Channel I
Oscilloscope
Channel II RL≥ 1M Ω
CL ≤ 20 pF
50 Ω 1 kΩ

95 10843

Figure 4. Test circuit, saturated operation

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 TCET1100/ TCET1100G
Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

10000
300

I CEO - Collector Dark Current,

V CE = 20 V
P tot –Total Power Dissipation ( mW)

Coupled device IF = 0

with open Base ( nA )

250 1000

200
Phototransistor
100
150
IR-diode
100
10
50

0 1
0 40 80 120 0 25 50 75 100
96 11700 Tamb – Ambient Temperature( °C ) 95 11026 Tamb - Ambient Temperature ( ° C )

Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 9. Collector Dark Current vs. Ambient Temperature

100
1000 IC – Collector Current ( mA ) V CE=5V

10
I F - Forward Current ( mA )

100

1
10

1 0.1

0.1 0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
96 11862 V F - Forward Voltage ( V ) 95 11027 I F – Forward Current ( mA )

Figure 7. Forward Current vs. Forward Voltage Figure 10. Collector Current vs. Forward Current

2.0 100
CTRrel – Relative Current Transfer Ratio

V CE=5V 20mA
IC – Collector Current ( mA)

I F=5mA I F=50mA
1.5
10mA
10

5mA
1.0

1 2mA
0.5
1mA

0 0.1
–25 0 25 50 75 0.1 1 10 100
95 11025 Tamb – Ambient Temperature ( °C ) 95 10985 V CE – Collector Emitter Voltage ( V )

Figure 8. Relative Current Transfer Ratio vs. Ambient Figure 11. Collector Current vs. Collector Emitter Voltage
Temperature

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Vishay Semiconductors
VCEsat– Collector Emitter Saturation Voltage (V)

1.0 50

ton / toff –Turn on / Turn off Time ( µ s )

20% Saturated Operation
0.8 40 V S=5V
RL=1k Ω
CTR=50%
0.6 30
toff
0.4 20

0.2 10
10%
ton
0 0
1 10 100 0 5 10 15 20
95 11028 I C – Collector Current ( mA ) 95 11031 I F – Forward Current ( mA )

Figure 12. Collector Emitter Saturation Voltage vs. Collector Figure 15. Turn on / off Time vs. Forward Current
Current

1000
CTR – Current Transfer Ratio ( % )

V CE=5V

100

10

1
0.1 1 10 100
95 11029 I F – Forward Current ( mA )

Figure 13. Current Transfer Ratio vs. Forward Current

10
ton / toff –Turn on / Turn off Time ( µ s )

Non Saturated
Operation
8 V S=5V
ton RL=100 Ω

6
toff
4

0
0 2 4 6 10
95 11030 I C – Collector Current ( mA )

Figure 14. Turn on / off Time vs. Collector Current

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Vishay Semiconductors

Package Dimensions in mm

14789

Package Dimensions in mm

14792

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Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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