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LM5116
SNVS499H – FEBRUARY 2007 – REVISED JULY 2015

LM5116 Wide Range Synchronous Buck Controller

1 Features 3 Description
•
1 Emulated Peak Current Mode The LM5116 is a synchronous buck controller
intended for step-down regulator applications from a
• Wide Operating Range Up to 100 V high-voltage or widely varying input supply. The
• Low IQ Shutdown (< 10 µA) control method is based upon current mode control
• Drives Standard or Logic Level MOSFETs utilizing an emulated current ramp. Current mode
• Robust 3.5-A Peak Gate Drive control provides inherent line feed-forward, cycle-by-
cycle current limiting, and ease-of-loop
• Free-run or Synchronous Operation to 1 MHz compensation. The use of an emulated control ramp
• Optional Diode Emulation Mode reduces noise sensitivity of the pulse-width
• Programmable Output from 1.215 V to 80 V modulation circuit, allowing reliable control of very
small duty cycles necessary in high-input voltage
• Precision 1.5% Voltage Reference applications.
• Programmable Current Limit
The operating frequency is programmable from 50
• Programmable Soft-Start kHz to 1 MHz. The LM5116 drives external high-side
• Programmable Line Undervoltage Lockout and low-side NMOS power switches with adaptive
• Automatic Switch to External Bias Supply dead-time control. A user-selectable diode emulation
mode enables discontinuous mode operation, for
• HTSSOP-20 Exposed Pad
improved efficiency at light load conditions. A low
• Thermal Shutdown quiescent current shutdown disables the controller
• Create a Custom Design Using the LM5116 with and consumes less than 10 µA of total input current.
the WEBENCH Power Designer Additional features include a high-voltage bias
regulator, automatic switch-over to external bias for
2 Applications improved efficiency, thermal shutdown, frequency
• Automotive Infotainment synchronization, cycle-by-cycle current limit, and
adjustable line undervoltage lockout. The device is
• Industrial DC-DC Motor Drivers available in a power enhanced HTSSOP-20 package
• Automotive USB Adapters featuring an exposed die attach pad to aid thermal
• Telecom Servers dissipation.

Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
LM5116 HTSSOP (20) 6.50 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.

Typical Application
VIN
VIN LM5116 VCC
C VCC
CIN RUV2

UVLO HB
VIN
R UV1
CHB

EN HO L
VOUT
CSYNC SW
RT/ SYNC C OUT
LO
RT
CS
RS

COMP CSG
C COMP
DEMB
CHF
R COMP VOUT
FB VCCX R FB2
SS RAMP AGND PGND

C SS C RAMP
RFB1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LM5116
SNVS499H – FEBRUARY 2007 – REVISED JULY 2015 www.ti.com

Table of Contents
1 Features .................................................................. 1 7.4 Device Functional Modes........................................ 19
2 Applications ........................................................... 1 8 Application and Implementation ........................ 21
3 Description ............................................................. 1 8.1 Application Information............................................ 21
4 Revision History..................................................... 2 8.2 Typical Application ................................................. 21
5 Pin Configuration and Functions ......................... 3 9 Power Supply Recommendations...................... 33
6 Specifications......................................................... 4 10 Layout................................................................... 33
6.1 Absolute Maximum Ratings ...................................... 4 10.1 Layout Guidelines ................................................. 33
6.2 ESD Ratings.............................................................. 5 10.2 Layout Example .................................................... 33
6.3 Recommended Operating Conditions....................... 5 11 Device and Documentation Support ................. 34
6.4 Thermal Information .................................................. 5 11.1 Custom Design with WEBENCH Tools................. 34
6.5 Electrical Characteristics........................................... 6 11.2 Receiving Notification of Documentation Updates 34
6.6 Switching Characteristics .......................................... 8 11.3 Device Support...................................................... 34
6.7 Typical Performance Characteristics ........................ 9 11.4 Community Resources.......................................... 34
7 Detailed Description ............................................ 13 11.5 Trademarks ........................................................... 34
7.1 Overview ................................................................. 13 11.6 Electrostatic Discharge Caution ............................ 34
7.2 Functional Block Diagram ....................................... 13 11.7 Glossary ................................................................ 35
7.3 Feature Description................................................. 14 12 Mechanical, Packaging, and Orderable
Information ........................................................... 35

4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision G (March 2013) to Revision H Page

• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1

Changes from Revision F (March 2013) to Revision G Page

• Changed layout of National Data Sheet to TI format ........................................................................................................... 21

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5 Pin Configuration and Functions

PWP Package
20-Pin HTSSOP
Top View

VIN 1 20 SW

UVLO 2 19 HO

RT/SYNC 3 18 HB

EN 4 17 VCCX

RAMP 5 16 VCC
TSSOP- 20
AGND 6 15 LO

SS 7 14 PGND

FB 8 13 CSG
EP
COMP 9 12 CS

VOUT 10 11 DEMB

Pin Functions
PIN
I/O (1) DESCRIPTION
NAME NO.
Analog ground.Connect to PGND through the exposed pad ground connection under the
AGND 6 G
LM5116.
Output of the internal error amplifier. The loop compensation network should be connected
COMP 9 O
between this pin and the FB pin.
Current sense amplifier input. Connect to the top of the current sense resistor or the drain of
CS 12 I
the low-sided MOSFET if RDS(ON) current sensing is used.
Current sense amplifier input. Connect to the bottom of the sense resistor or the source of
CSG 13 G
the low-side MOSFET if RDS(ON) current sensing is used.
Low-side MOSFET source voltage monitor for diode emulation. For start-up into a pre-biased
load, tie this pin to ground at the CSG connection. For fully synchronous operation, use an
DEMB 11 I
external series resistor between DEMB and ground to raise the diode emulation threshold
above the low-side SW on-voltage.
If the EN pin is below 0.5 V, the regulator is in a low-power state, drawing less than 10 µA
EN 4 I from VIN. EN must be pulled above 3.3 V for normal operation. The maximum EN transition
time for proper operation is one switching period.
Feedback signal from the regulated output. This pin is connected to the inverting input of the
FB 8 I
internal error amplifier. The regulation threshold is 1.215 V.
High-side driver supply for bootstrap gate drive. Connect to the cathode of the bootstrap
diode and the positive terminal of the bootstrap capacitor. The bootstrap capacitor supplies
HB 18 P
current to charge the high-side MOSFET gate and should be placed as close to the
controller as possible.
Connect to the gate of the high-side synchronous MOSFET through a short, low inductance
HO 19 O
path
Connect to the gate of the low-side synchronous MOSFET through a short, low inductance
LO 15 O
path.
Power ground. Connect to AGND through the exposed pad ground connection under the
PGND 14 G
LM5116
Ramp control signal. An external capacitor connected between this pin and the AGND pin
RAMP 5 I
sets the ramp slope used for current mode control.
The internal oscillator is set with a single resistor between this pin and the AGND pin. The
RT/SYNC 3 I recommended frequency range is 50 kHz to 1 MHz. The internal oscillator can be
synchronized to an external clock by AC coupling a positive edge onto this node.

(1) G = Ground, I = Input, O = Output, P = Power

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Pin Functions (continued)

PIN
I/O (1) DESCRIPTION
NAME NO.
An external capacitor and an internal 10-µA current source set the soft start time constant for
SS 7 I the rise of the error amp reference. The SS pin is held low during VCC < 4.5 V, UVLO <
1.215 V, EN input low, or thermal shutdown.
Switch node. Connect to the negative terminal of the bootstrap capacitor and the source
SW 20 O
terminal of the high-side MOSFET.
VIN 1 P Chip supply voltage, input voltage monitor, and input to the VCC regulator.
If the UVLO pin is below 1.215 V, the regulator is in standby mode (VCC regulator running,
switching regulator disabled). If the UVLO pin voltage is above 1.215 V, the regulator is
UVLO 2 I operational. An external voltage divider can set an undervoltage shutdown threshold. There
is a fixed 5-µA pullup current on this pin when EN is high. UVLO is pulled to ground when a
current limit condition exists for 256 clock cycles.
Locally decouple to PGND using a low ESR/ESL capacitor located as close to the controller
VCC 16 P
as possible.
Optional input for an externally supplied VCC. If VCCX > 4.5 V, VCCX is internally connected
VCCX 17 P to VCC and the internal VCC regulator is disabled. If VCCX is unused, it should be
connected to ground.
VOUT 10 I Output monitor. Connect directly to the output voltage.
EP EP — Exposed pad. Solder to ground plane.

6 Specifications
6.1 Absolute Maximum Ratings
(1)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN to GND –0.3 100 V
(2)
VCC, VCCX, UVLO to GND –0.3 16 V
SW, CS to GND –3.0 100 V
HB to SW –0.3 16 V
HO to SW –0.3 HB +0.3 V
VOUT to GND –0.3 100 V
CSG to GND –1 1 V
LO to GND –0.3 VCC + 0.3 V
SS to GND –0.3 7 V
FB to GND –0.3 7 V
DEMB to GND –0.3 VCC V
RT to GND –0.3 7 V
EN to GND –0.3 100 V
Junction Temperature 150 °C
Storage Temperature –55 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) These pins must not exceed VIN.

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6.2 ESD Ratings

VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) (2) ±2000
V(ESD) Electrostatic discharge Charged-device model (CDM), per JEDEC specification JESD22- V
±750
C101 (3)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin. 2-kV rating for all pins except VIN
which is rated for 1.5 kV.
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

(1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN 6 100 V
VCC, VCCX 4.75 15 V
HB to SW 4.75 15 V
DEMB to GND –0.3 2 V
Junction Temperature –40 125 °C

(1) RAMP, COMP are output pins. As such they are not specified to have an external voltage applied.
(2) Recommended Operating Ratings do not imply performance limits. For specified performance limits and associated test conditions, see
the Electrical Characteristics tables.

6.4 Thermal Information

LM5116
THERMAL METRIC (1) PWP (HTSSOP) UNIT
20 PINS
RθJA Junction-to-ambient thermal resistance 40.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 20.9 °C/W
RθJB Junction-to-board thermal resistance 17.7 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 17.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.7 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.

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6.5 Electrical Characteristics

Typical limits are for TJ = 25°C only, represent the most likely parametric norm at TJ = 25°C, and are provided for reference
purposes only; minimum and maximum limits apply over the junction temperature range of –40°C to 125°C. Unless otherwise
specified, the following conditions apply: VIN = 48 V, VCC = 7.4 V, VCCX = 0 V, EN = 5 V, RT = 16 kΩ, no load on LO and
HO.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN SUPPLY
VCCX = 0 V, VIN = 48 V 5 7
IBIAS VIN Operating Current mA
VCCX = 0 V, VIN = 100 V 5.9 8
VCCX = 5 V, VIN = 48 V 1.2 1.7
IBIASX VIN Operating Current mA
VCCX = 5 V, VIN = 100 V 1.6 2.3
EN = 0 V, VIN = 48 V 1 10
ISTDBY VIN Shutdown Current µA
EN = 0 V, VIN = 100 V 1
VCC REGULATOR
VCC(REG) VCC Regulation 7.1 7.4 7.7 V
VCC LDO Mode Turnoff 10.6 V
VCC Regulation VIN = 6 V 5 5.9 6 V
VCC Sourcing Current Limit VCC = 0 V 15 26 mA
VCCX Switch Threshold VCCX Rising 4.3 4.5 4.7 V
VCCX Switch Hysteresis 0.25 V
VCCX Switch RDS(ON) ICCX = 10 mA 3.8 6.2 Ω
VCCX Leakage VCCX = 0 V –200 nA
VCCX Pull- down Resistance VCCX = 3 V 100 kΩ
VCC Undervoltage Threshold VCC Rising 4.3 4.5 4.7 V
VCC Undervoltage Hysteresis 0.2 V
HB DC Bias Current HB – SW = 15 V 125 200 µA
EN INPUT
VIL max EN Input Low Threshold 0.5 V
VIH min EN Input High Threshold 3.3 V
EN Input Bias Current VEN = 3 V –7.5 –3 1 µA
EN Input Bias Current VEN = 0.5 V –1 0 1 µA
EN Input Bias Current VEN = 100 V 20 90 µA
UVLO THRESHOLDS
UVLO Standby Threshold UVLO Rising 1.170 1.215 1.262 V
UVLO Threshold Hysteresis 0.1 V
UVLO Pull-up Current Source UVLO = 0 V 5.4 µA
UVLO Pull-down RDS(ON) 80 210 Ω
SOFT-START
SS Current Source SS = 0 V 8 11 14 µA
SS Diode Emulation Ramp Disable SS Rising
3 V
Threshold
SS to FB Offset FB = 1.25 V 160 mV
SS Output Low Voltage Sinking 100 µA, UVLO = 0 V 45 mV
ERROR AMPLIFIER
VREF FB Reference Voltage Measured at FB pin, FB = COMP 1.195 1.215 1.231 V
FB Input Bias Current FB = 2 V 15 500 nA
COMP Sink/Source Current 3 mA
AOL DC Gain 80 dB
fBW Unity Gain Bandwidth 3 MHz

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Electrical Characteristics (continued)

Typical limits are for TJ = 25°C only, represent the most likely parametric norm at TJ = 25°C, and are provided for reference
purposes only; minimum and maximum limits apply over the junction temperature range of –40°C to 125°C. Unless otherwise
specified, the following conditions apply: VIN = 48 V, VCC = 7.4 V, VCCX = 0 V, EN = 5 V, RT = 16 kΩ, no load on LO and
HO.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OSCILLATOR
fSW1 Frequency 1 RT = 16 kΩ 180 200 220 kHz
fSW2 Frequency 2 RT = 5 kΩ 480 535 590 kHz
RT output voltage 1.191 1.215 1.239 V
RT sync positive threshold 3 3.5 4 V
CURRENT LIMIT
Cycle-by-cycle Sense Voltage
VCS(TH) VCCX = 0 V, RAMP = 0 V 94 110 126 mV
Threshold (CSG - CS)
Cycle-by-cycle Sense Voltage
VCS(THX) VCCX = 5 V, RAMP = 0 V 105 122 139 mV
Threshold (CSG - CS)
CS Bias Current CS = 100 V –1 1 (1) µA
CS Bias Current CS = 0 V 90 125 µA
CSG Bias Current CSG = 0 V 90 125 µA
RAMP GENERATOR
IR1 RAMP Current 1 VIN = 60 V, VOUT=10 V 235 285 335 µA
IR2 RAMP Current 2 VIN = 10 V, VOUT = 10 V 21 28 35 µA
VOUT Bias Current VOUT = 36 V 200 µA
RAMP Output Low Voltage VIN = 60 V, VOUT = 10 V 265 mV
DIODE EMULATION
SW Zero Cross Threshold –6 mV
DEMB Output Current DEMB = 0 V, SS = 1.25 V 1.6 2.7 3.8 µA
DEMB Output Current DEMB =0 V, SS = 2.8 V 28 38 48 µA
DEMB Output Current DEMB = 0 V, SS = Regulated by FB 45 65 85 µA
LO GATE DRIVER
VOLL LO Low-state Output Voltage ILO = 100 mA 0.08 0.17 V
VOHL LO High-state Output Voltage ILO = -100 mA, VOHL = VCC - VLO 0.25 V
IOHL Peak LO Source Current VLO = 0 V 1.8 A
IOLL Peak LO Sink Current VLO = VCC 3.5 A
HO GATE DRIVER
VOLH HO Low-state Output Voltage IHO = 100 mA 0.17 0.27 V
VOHH HO High-state Output Voltage IHO = -100 mA, VOHH = VHB – VHO 0.45 V
IOHH Peak HO Source Current VHO = 0 V 1 A
IOLH Peak HO Sink Current VHO = VCC 2.2 A
HB to SW undervoltage 3 V
THERMAL
TSD Thermal Shutdown Rising 170 °C
Thermal Shutdown Hysteresis 15 °C

(1) Guaranteed at TJ = 25°C.

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6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PWM COMPARATORS
tHO(OFF) Forced HO Off-time 320 450 580 ns
tON(min) Minimum HO On-time VIN = 80 V, CRAMP = 50 pF 100 ns
CURRENT LIMIT
RT = 16 kΩ, (200 kHz), (256 clock
Current Limit Fault Timer 1.28 ms
cycles)
LO GATE DRIVER
LO Rise Time C-load = 1000 pF 18 ns
LO Fall Time C-load = 1000 pF 12 ns
HO GATE DRIVER
HO Rise Time C-load = 1000 pF 19 ns
HO High-side Fall Time C-load = 1000 pF 13 ns
SWITCHING CHARACTERISTICS
LO Fall to HO Rise Delay C-load = 0 75 ns
HO Fall to LO Rise Delay C-load = 0 70 ns

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6.7 Typical Performance Characteristics

Figure 1. Typical Application Circuit Efficiency Figure 2. Driver Source Current vs VCC

Figure 3. Driver Dead-time vs Temperature Figure 4. HO High RDS(ON) vs VCC

Figure 5. Driver Sink Current vs VCC Figure 6. HO Low RDS(ON) vs VCC

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Typical Performance Characteristics (continued)

Figure 7. LO High RDS(ON) vs VCC Figure 8. EN Input Threshold vs Temperature

Figure 9. LO Low RDS(ON) vs VCC Figure 10. HB to SW UVLO vs Temperature

Figure 11. Forced HO Off-time vs Temperature VCCX = 5 V Figure 12. HB DC Bias Current vs Temperature

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Typical Performance Characteristics (continued)

Figure 13. Frequency vs RT Figure 14. Error Amp Gain vs Frequency

Figure 15. Frequency vs Temperature Figure 16. Error Amp Phase vs Frequency

Figure 17. Frequency vs Temperature Figure 18. Current Limit Threshold vs Temperature

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Typical Performance Characteristics (continued)

Figure 19. VIN Operating Current vs Temperature Figure 20. VCC vs Temperature

Figure 21. VCC UVLO vs Temperature Figure 22. VCC vs VIN

Figure 23. VCC vs ICC Figure 24. VCCX Switch RDS(ON) vs VCCX

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7 Detailed Description

7.1 Overview
The LM5116 high voltage switching regulator features all of the functions necessary to implement an efficient
high voltage buck regulator using a minimum of external components. This easy to use regulator integrates high-
side and low-side MOSFET drivers capable of supplying peak currents of 2 Amps. The regulator control method
is based on current mode control utilizing an emulated current ramp. Emulated peak current mode control
provides inherent line feed-forward, cycle by cycle current limiting and ease of loop compensation. The use of an
emulated control ramp reduces noise sensitivity of the pulse-width modulation circuit, allowing reliable processing
of the very small duty cycles necessary in high input voltage applications. The operating frequency is user
programmable from 50 kHz to 1 MHz. An oscillator/synchronization pin allows the operating frequency to be set
by a single resistor or synchronized to an external clock. Fault protection features include current limiting, thermal
shutdown and remote shutdown capability. An undervoltage lockout input allows regulator shutdown when the
input voltage is below a user selected threshold, and an enable function will put the regulator into an extremely
low current shutdown via the enable input. The HTSSOP-20 package features an exposed pad to aid in thermal
dissipation.

7.2 Functional Block Diagram

17 VCCX
VCCX C VCCX
LM 5116
4.5 V +
VIN 6 V -100 V -
1 VIN 7. 4 V VCC 16
REGULATOR
UVLO
R EN C VCC
C IN D1
4 EN SLEEP
EN MODE STANDBY
1.215 V SHUTDOWN
D2 THERMAL HB 18
R UV2 5 μA
SHUTDOWN
2 UVLO
UVLO
LOGIC
C FT DIS CHB
R UV1 HICCUP FAULT TIMER UVLO
256 CLOCK CYCLES VIN

CLK DRIVER
HO 19 Q1
10 μA S Q L1
7 SS ADAPTIVE VOUT
3V TIMER SW 20
R Q
CSS PWM
VCC
1.215 V
1V DRIVER
CURRENT LO 15 Q2 CSNUB
LIMIT COUT
8 FB R SNUB
CS 12
C COMP ERROR TRACK
AMP 1.6 V SAMPLE 10 x RS V/A
CHF and
A =10
RS
R COMP HOLD 0.5 V CSG 13
9 COMP
+ CLK
DIODE SW
EMULATION 11
DEMB
SS CONTROL

VIN VOUT 10
CLK
SYNC C SYNC
3 RT/SYNC
OSCILLATOR R FB2
RAMP GENERATOR
I R = 5 μA / V x ( VIN - VOUT )+25 μA
RT
IR
R FB1

RAMP AGND PGND

5 6 14
CRAMP

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7.3 Feature Description

7.3.1 High Voltage Start-Up Regulator
The LM5116 contains a dual mode internal high voltage startup regulator that provides the VCC bias supply for
the PWM controller and a boot-strap gate drive for the high-side buck MOSFET. The input pin (VIN) can be
connected directly to an input voltage source as high as 100 volts. For input voltages below 10.6 V, a low
dropout switch connects VCC directly to VIN. In this supply range, VCC is approximately equal to VIN. For VIN
voltages greater than 10.6 V, the low dropout switch is disabled and the VCC regulator is enabled to maintain
VCC at approximately 7.4 V. The wide operating range of 6 V to 100 V is achieved through the use of this dual
mode regulator.
Upon power-up, the regulator sources current into the capacitor connected to the VCC pin. When the voltage at
the VCC pin exceeds 4.5 V and the UVLO pin is greater than 1.215 V, the output switch is enabled and a soft-
start sequence begins. The output switch remains enabled until VCC falls below 4.5 V, EN is pulled low, the
UVLO pin falls below 1.215 V, or the die temperature exceeds the thermal limit threshold.
VCCX
CVCCX

VOUT
SW L

COUT

Figure 25. VCCX Bias Supply with Additional Inductor Winding

An output voltage derived bias supply can be applied to the VCCX pin to reduce the IC power dissipation. If the
bias supply voltage is greater than 4.5 V, the internal regulator will essentially shut off, reducing the IC power
dissipation. The VCC regulator series pass transistor includes a diode between VCC and VIN that should not be
forward biased in normal operation. For an output voltage between 5 V and 15 V, VOUT can be connected
directly to VCCX. For VOUT < 5 V, a bias winding on the output inductor can be added to VOUT. If the bias
winding can supply VCCX greater than VIN, an external blocking diode is required from the input power supply to
the VIN pin to prevent VCC from discharging into the input supply.
The output of the VCC regulator is current limited to 15 mA minimum. The VCC current is determined by the
MOSFET gate charge, switching frequency and quiescent current (see MOSFETs). If VCCX is powered by the
output voltage or an inductor winding, the VCC current should be evaluated during startup to ensure that it is less
than the 15 mA minimum current limit specification. If VCCX is powered by an external regulator derived from
VIN, there is no restriction on the VCC current.
VIN

1
VIN

0.1 PF

6
AGND

Figure 26. Input Blocking Diode for VCCX > VIN

In high voltage applications extra care should be taken to ensure the VIN pin does not exceed the absolute
maximum voltage rating of 100 V. During line or load transients, voltage ringing on the VIN line that exceeds the
Absolute Maximum Ratings can damage the IC. Both careful PC board layout and the use of quality bypass
capacitors located close to the VIN and GND pins are essential.

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Feature Description (continued)

7.3.2 Enable
The LM5116 contains an enable function allowing a very low input current shutdown. If the enable pin is pulled
below 0.5 V, the regulator enters shutdown, drawing less than 10 µA from the VIN pin. Raising the EN input
above 3.3 V returns the regulator to normal operation. The maximum EN transition time for proper operation is
one switching period. For example, the enable rise time must be less than 4 μs for 250-kHz operation.
A 1-MΩ pullup resistor to VIN can be used to interface with an open collector control signal. At low input voltage
the pullup resistor may be reduced to 100 kΩ to speed up the EN transition time. The EN pin can be tied directly
to VIN if this function is not needed. It must not be left floating. If low-power shutdown is not needed, the UVLO
pin should be used as an on/off control.
Internal 5 V rail

3 μA

EN

6V

Figure 27. Enable Circuit Figure 28. EN Bias Current vs Voltage

7.3.3 UVLO
An undervoltage lockout pin is provided to disable the regulator without entering shutdown. If the UVLO pin is
pulled below 1.215 V, the regulator enters a standby mode of operation with the soft-start capacitor discharged
and outputs disabled, but with the VCC regulator running. If the UVLO input is pulled above 1.215 V, the
controller will resume normal operation. A voltage divider from input to ground can be used to set a VIN threshold
to disable the supply in brown-out conditions or for low input faults. The UVLO pin has a 5-µA internal pull up
current that allows this pin to left open if the input undervoltage lockout function is not needed. For applications
which require fast on/off cycling, the UVLO pin with an open collector control signal may be used to ensure
proper start-up sequencing.
The UVLO pin is also used to implement a “hiccup” current limit. If a current limit fault exists for more than 256
consecutive clock cycles, the UVLO pin will be internally pulled down to 200 mV and then released, and a new
SS cycle initiated. A capacitor to ground connected to the UVLO pin will set the timing for hiccup mode current
limit. When this feature is used in conjunction with the voltage divider, a diode across the top resistor may be
used to discharge the capacitor in the event of an input undervoltage condition. There is a 5-µs filter at the input
to the fault comparator. At higher switching frequency (greater than approximately 250 kHz) the hiccup timer may
be disabled if the fault capacitor is not used.

7.3.4 Oscillator and Sync Capability

The LM5116 oscillator frequency is set by a single external resistor connected between the RT/SYNC pin and
the AGND pin. The resistor should be located very close to the device and connected directly to the pins of the
IC (RT/SYNC and AGND). To set a desired oscillator frequency (fSW), the necessary value for the resistor can be
calculated from the following equation:
T - 450 ns
RT =
284 pF

where
• T = 1 / fSW and RT is in ohms (1)
450 ns represents the fixed minimum off time.

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Feature Description (continued)

The LM5116 oscillator has a maximum programmable frequency that is dependent on the VCC voltage. If VCC is
above 6 V, the frequency can be programmed up to 1 MHz. If VCCX is used to bias VCC and VCCX < 6 V, the
maximum programmable oscillator frequency is 750 kHz.
The RT/SYNC pin can be used to synchronize the internal oscillator to an external clock. The external clock must
be a higher frequency than the free-running frequency set by the RT resistor. The internal oscillator can be
synchronized to an external clock by AC coupling a positive edge into the RT/SYNC pin. The voltage at the
RT/SYNC pin is nominally 1.215 V and must exceed 4 V to trip the internal synchronization pulse detection. A 5-
V amplitude signal and 100-pF coupling capacitor are recommended. The free-running frequency should be set
nominally 15% below the external clock. Synchronizing above twice the free-running frequency may result in
abnormal behavior of the pulse width modulator.

7.3.5 Error Amplifier and PWM Comparator

The internal high-gain error amplifier generates an error signal proportional to the difference between the
regulated output voltage and an internal precision reference (1.215 V). The output of the error amplifier is
connected to the COMP pin allowing the user to provide loop compensation components, generally a type II
network. This network creates a pole at very low frequency, a mid-band zero, and a noise reducing high
frequency pole. The PWM comparator compares the emulated current sense signal from the RAMP generator to
the error amplifier output voltage at the COMP pin.

7.3.6 Ramp Generator

The ramp signal used in the pulse width modulator for current mode control is typically derived directly from the
buck switch current. This switch current corresponds to the positive slope portion of the inductor current. Using
this signal for the PWM ramp simplifies the control loop transfer function to a single pole response and provides
inherent input voltage feed-forward compensation. The disadvantage of using the buck switch current signal for
PWM control is the large leading edge spike due to circuit parasitics that must be filtered or blanked. Also, the
current measurement may introduce significant propagation delays. The filtering, blanking time and propagation
delay limit the minimal achievable pulse width. In applications where the input voltage may be relatively large in
comparison to the output voltage, controlling small pulse widths and duty cycles is necessary for regulation. The
LM5116 utilizes a unique ramp generator which does not actually measure the buck switch current but rather
reconstructs the signal. Representing or emulating the inductor current provides a ramp signal to the PWM
comparator that is free of leading edge spikes and measurement or filtering delays. The current reconstruction is
comprised of two elements, a sample-and-hold DC level and an emulated current ramp.

tON
(5 μA/V x (VIN-VOUT) + 25 μA) x
CRAMP
RAMP

Sample and Hold

10 x RS V/A
DC Level

tON

Figure 29. Composition of Current Sense Signal

The sample-and-hold DC level is derived from a measurement of the recirculating current through either the low-
side MOSFET or current sense resistor. The voltage level across the MOSFET or sense resistor is sampled and
held just prior to the onset of the next conduction interval of the buck switch. The current sensing and sample-
and-hold provide the DC level of the reconstructed current signal. The positive slope inductor current ramp is
emulated by an external capacitor connected from the RAMP pin to the AGND and an internal voltage controlled
current source. The ramp current source that emulates the inductor current is a function of the VIN and VOUT
voltages per the following equation:
IR = 5 µA/V x (VIN - VOUT) + 25 µA (2)

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Feature Description (continued)

Proper selection of the RAMP capacitor (CRAMP) depends upon the value of the output inductor (L) and the
current sense resistor (RS). For proper current emulation, the DC sample and hold value and the ramp amplitude
must have the same dependence on the load current. That is:
gm x L
RS x A = , so
CRAMP
gm x L
CRAMP =
A x RS

where
• gm is the ramp generator transconductance (5 µA/V)
• A is the current sense amplifier gain (10 V/V) (3)
The ramp capacitor should be located very close to the device and connected directly to the pins of the IC
(RAMP and AGND).
The difference between the average inductor current and the DC value of the sampled inductor current can
cause instability for certain operating conditions. This instability is known as sub-harmonic oscillation, which
occurs when the inductor ripple current does not return to its initial value by the start of next switching cycle.
Sub-harmonic oscillation is normally characterized by observing alternating wide and narrow pulses at the switch
node. Adding a fixed slope voltage ramp (slope compensation) to the current sense signal prevents this
oscillation. The 25 µA of offset current provided from the emulated current source adds the optimal slope
compensation to the ramp signal for a 5-V output. For higher output voltages, additional slope compensation may
be required. In these applications, a resistor is added between RAMP and VCC to increase the ramp slope
compensation.

SW

LO
RG
CS

RG
CSG

DEMB
RDEMB

Figure 30. RDS(ON) Current Sensing without Diode Emulation

The DC current sample is obtained using the CS and CSG pins connected to either a source sense resistor (RS)
or the RDS(ON) of the low-side MOSFET. For RDS(ON) sensing, RS = RDS(ON) of the low-side MOSFET. In this case
it is sometimes helpful to adjust the current sense amplifier gain (A) to a lower value in order to obtain the
desired current limit. Adding external resistors RG in series with CS and CSG, the current sense amplifier gain A
becomes:
10k
A,
1k + RG (4)

7.3.7 Current Limit

The LM5116 contains a current limit monitoring scheme to protect the circuit from possible over-current
conditions. When set correctly, the emulated current sense signal is proportional to the buck switch current with a
scale factor determined by the current limit sense resistor. The emulated ramp signal is applied to the current
limit comparator. If the emulated ramp signal exceeds 1.6 V, the current cycle is terminated (cycle-by-cycle
current limiting). Since the ramp amplitude is proportional to VIN - VOUT, if VOUT is shorted, there is an immediate
reduction in duty cycle. To further protect the external switches during prolonged current limit conditions, an
internal counter counts clock pulses when in current limit. When the counter detects 256 consecutive clock
cycles, the regulator enters a low power dissipation hiccup mode of current limit. The regulator is shut down by
momentarily pulling UVLO low, and the soft-start capacitor discharged. The regulator is restarted with a full soft-
start cycle once UVLO charges back to 1.215 V. This process is repeated until the fault is removed. The hiccup

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Feature Description (continued)

off-time can be controlled by a capacitor to ground on the UVLO pin. In applications with low output inductance
and high input voltage, the switch current may overshoot due to the propagation delay of the current limit
comparator. If an overshoot should occur, the sample-and-hold circuit will detect the excess recirculating current.
If the sample-and-hold DC level exceeds the internal current limit threshold, the buck switch will be disabled and
skip pulses until the current has decayed below the current limit threshold. This approach prevents current
runaway conditions due to propagation delays or inductor saturation since the inductor current is forced to decay
following any current overshoot.
CURRENT LIMIT CURRENT SENSE
COMPARATOR AMPLIFIER
1.6 V
LO 10 k 1k CS RG
-
+
--
RS IL
++
gm x (VIN - VOUT) + 25 μA
10 k 1 k CSG RG
0.5V

10 k
HO RAMP A=
1 k + RG
CRAMP

Figure 31. Current Limit and Ramp Circuit

Using a current sense resistor in the source of the low-side MOSFET provides superior current limit accuracy
compared to RDS(ON) sensing. RDS(ON) sensing is far less accurate due to the large variation of MOSFET RDS(ON)
with temperature and part-to-part variation. The CS and CSG pins should be Kelvin connected to the current
sense resistor or MOSFET drain and source.
The peak current which triggers the current limit comparator is:
25 PA x tON
1.1V -
CRAMP 1.1V
IPEAK = ,
A x RS A x RS

where
• tON is the on-time of the high-side MOSFET (5)
The 1.1-V threshold is the difference between the 1.6-V reference at the current limit comparator and the 0.5-V
offset at the current sense amplifier. This offset at the current sense amplifier allows the inductor ripple current to
go negative by 0.5 V / (A x RS) when running full synchronous operation.
Current limit hysteresis prevents chatter around the threshold when VCCX is powered from VOUT. When 4.5 V <
VCC < 5.8 V, the 1.6-V reference is increased to 1.72 V. The peak current which triggers the current limit
comparator becomes:
25 PA x tON
1.22V -
CRAMP 1.22V
IPEAK = ,
A x RS A x RS (6)
This has the effect of a 10% fold-back of the peak current during a short circuit when VCCX is powered from a 5-
V output.

7.3.8 HO Ouput
The LM5116 contains a high current, high-side driver and associated high voltage level shift. This gate driver
circuit works in conjunction with an external diode and bootstrap capacitor. A 1-µF ceramic capacitor, connected
with short traces between the HB pin and SW pin, is recommended. During the off-time of the high-side
MOSFET, the SW pin voltage is approximately –0.5 V and the bootstrap capacitor charges from VCC through the
external bootstrap diode. When operating with a high PWM duty cycle, the buck switch will be forced off each
cycle for 450 ns to ensure that the bootstrap capacitor is recharged.

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Feature Description (continued)

The LO and HO outputs are controlled with an adaptive deadtime methodology which insures that both outputs
are never enabled at the same time. When the controller commands HO to be enabled, the adaptive block first
disables LO and waits for the LO voltage to drop below approximately 25% of VCC. HO is then enabled after a
small delay. Similarly, when HO turns off, LO waits until the SW voltage has fallen to ½ of VCC. LO is then
enabled after a small delay. In the event that SW does not fall within approximately 150 ns, LO is asserted high.
This methodology insures adequate dead-time for appropriately sized MOSFETs.
In some applications it may be desirable to slow down the high-side MOSFET turnon time in order to control
switching spikes. This may be accomplished by adding a resistor is series with the HO output to the high-side
gate. Values greater than 10 Ω should be avoided so as not to interfere with the adaptive gate drive. Use of an
HB resistor for this function should be carefully evaluated so as not cause potentially harmful negative voltage to
the high-side driver, and is generally limited to 2.2-Ω maximum.

7.3.9 Thermal Protection

Internal thermal shutdown circuitry is provided to protect the integrated circuit in the event the maximum junction
temperature is exceeded. When activated, typically at 170°C, the controller is forced into a low power reset state,
disabling the output driver and the bias regulator. This is designed to prevent catastrophic failures from
accidental device overheating.

7.4 Device Functional Modes

7.4.1 Soft-Start and Diode Emulation
The soft-start feature allows the regulator to gradually reach the initial steady state operating point, thus reducing
start-up stresses and surges. The LM5116 will regulate the FB pin to the SS pin voltage or the internal 1.215-V
reference, whichever is lower. At the beginning of the soft-start sequence when SS = 0 V, the internal 10-µA soft-
start current source gradually increases the voltage of an external soft-start capacitor (CSS) connected to the SS
pin resulting in a gradual rise of FB and the output voltage.
DIODE EMULATION
COMPARATOR
RS
+ SW RDEMB
-
DEMB
1.215 V
5V
40 k
SS Latch

SS
+
-

Figure 32. Diode Emulation Control

During this initial charging of CSS to the internal reference voltage, the LM5116 will force diode emulation. That
is, the low-side MOSFET will turn off for the remainder of a cycle if the sensed inductor current becomes
negative. The inductor current is sensed by monitoring the voltage between SW and DEMB. As the SS capacitor
continues to charge beyond 1.215 V to 3 V, the DEMB bias current will increase from 0 µA up to 40 µA. With the
use of an external DEMB resistor (RDEMB), the current sense threshold for diode emulation will increase resulting
in the gradual transition to synchronous operation. Forcing diode emulation during soft-start allows the LM5116
to start up into a pre-biased output without unnecessarily discharging the output capacitor. Full synchronous
operation is obtained if the DEMB pin is always biased to a higher potential than the SW pin when LO is high.
RDEMB = 10 kΩ will bias the DEMB pin to 0.45V minimum, which is adequate for most applications. The DEMB
bias potential should always be kept below 2V. At very light loads with larger values of output inductance and
MOSFET capacitance, the switch voltage may fall slowly. If the SW voltage does not fall below the DEMB
threshold before the end of the HO fall to LO rise dead-time, switching will default to diode emulation mode.
When RDEMB = 0 Ω, the LM5116 will always run in diode emulation.

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Device Functional Modes (continued)

Once SS charges to 3 V the SS latch is set, increasing the DEMB bias current to 65 µA. An amplifier is enabled
that regulates SS to 160 mV above the FB voltage. This feature can prevent overshoot of the output voltage in
the event the output voltage momentarily dips out of regulation. When a fault is detected (VCC undervoltage,
UVLO pin < 1.215, or EN = 0 V) the soft-start capacitor is discharged. Once the fault condition is no longer
present, a new soft-start sequence begins.

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8 Application and Implementation

NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LM5116 device is a step-down DC-DC controller. The device is typically used to convert a higher DC-DC
voltage to a lower DC voltage. Use the following design procedure to select component values. Alternately, use
the WEBENCH® software to generate a complete design. The WEBENCH software uses an iterative design
procedure and assesses a comprehensive database of components when generating a design.

8.2 Typical Application

Figure 33. 5-V 7-A Typical Application Schematic

8.2.1 Design Requirements

The procedure for calculating the external components is illustrated with the following design example. The Bill of
Materials for this design is listed in Table 1. The circuit shown in Figure 33 is configured for the following
specifications:
• Output voltage = 5 V
• Input voltage = 7 V to 60 V
• Maximum load current = 7 A
• Switching frequency = 250 kHz
Simplified equations are used as a general guideline for the design method. See Comprehensive Equations.

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Typical Application (continued)

Table 1. Bill of Materials for 7V-60V Input, 5V 7A Output, 250kHz
ID Part Number Type Size Parameters Qty Vendor
C1, C2, C14 C2012X7R1E105K Capacitor, Ceramic 0805 1µF, 25V, X7R 3 TDK
C3 VJ0603Y103KXAAT Capacitor, Ceramic 0603 0.01µF, 50V, X7R 1 Vishay
C4 VJ0603A271JXAAT Capacitor, Ceramic 0603 270pF, 50V, COG, 5% 1 Vishay
VJ0603Y101KXATW1B
C5, C15 Capacitor, Ceramic 0603 100pF, 50V, X7R 2 Vishay
C
C6 VJ0603Y332KXXAT Capacitor, Ceramic 0603 3300pF, 25V, X7R 1 Vishay
C7 Capacitor, Ceramic 0603 Not Used 0
C8, C9, C10,
C4532X7R2A225M Capacitor, Ceramic 1812 2.2µF, 100V X7R 4 TDK
C11
C12 C3225X7R2A105M Capacitor, Ceramic 1210 1µF, 100V X7R 1 TDK
C13 C2012X7R2A104M Capacitor, Ceramic 0805 0.1µF, 100V X7R 1 TDK
C16, C17, C18,
C4532X6S0J107M Capacitor, Ceramic 1812 100µF, 6.3V, X6S, 105°C 5 TDK
C19, C20
C21, C22 Capacitor, Tantalum D Case Not Used 0
C23 Capacitor, Ceramic 0805 Not Used 0
Central
D1 CMPD2003 Diode, Switching SOT-23 200mA, 200V 1
Semi
Central
D2 CMPD2003 Diode, Switching SOT-23 Not Used 0
Semi
JMP1 Connector, Jumper 2 pin sq. post 1
L1 HC2LP-6R0 Inductor 6µH, 16.5A 1 Cooper
P1-P4 1514-2 Turret Terminal .090” dia. 4 Keystone
TP1-TP5 5012 Test Point .040” dia. 5 Keystone
Vishay
Q1, Q2 Si7850DP N-CH MOSFET SO-8 Power PAK 10.3A, 60V 2
Siliconix
R1 CRCW06031023F Resistor 0603 102kΩ, 1% 1 Vishay
R2 CRCW06032102F Resistor 0603 21.0kΩ, 1% 1 Vishay
R3 CRCW06033741F Resistor 0603 3.74kΩ, 1% 1 Vishay
R4 CRCW06031211F Resistor 0603 1.21kΩ, 1% 1 Vishay
R5 Resistor 0603 Not Used 0
R6, R7 CRCW06030R0J Resistor 0603 0Ω 2 Vishay
R8 CRCW0603103J Resistor 0603 10kΩ, 5% 1 Vishay
R9 CRCW06031242F Resistor 0603 12.4kΩ, 1% 1 Vishay
R10 CRCW0603183J Resistor 0603 18kΩ, 5% 1 Vishay
LRC-LRF2010-01-R010-
R11 Resistor 2010 0.010Ω, 1% 1 IRC
F
R12 Resistor 0603 Not Used 0
R13 CRCW0603105J Resistor 0603 1MΩ, 5% 1 Vishay
R14 Resistor 1206 Not Used 0
Synchronous Buck
U1 LM5116MHX HTSSOP-20 1 TI
Controller

8.2.2 Detailed Design Procedure

8.2.2.1 Custom Design with WEBENCH Tools

Click here to create a custom design using the LM5116 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
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3. WEBENCH Power Designer provides you with a customized schematic along with a list of materials with real
time pricing and component availability.
4. In most cases, you will also be able to:
– Run electrical simulations to see important waveforms and circuit performance,
– Run thermal simulations to understand the thermal performance of your board,
– Export your customized schematic and layout into popular CAD formats,
– Print PDF reports for the design, and share your design with colleagues.
5. Get more information about WEBENCH tools at www.ti.com/webench.

8.2.2.2 Timing Resistor

RT sets the oscillator switching frequency. Generally, higher frequency applications are smaller but have higher
losses. Operation at 250 kHz was selected for this example as a reasonable compromise for both small size and
high efficiency. The value of RT for 250 kHz switching frequency can be calculated as follows:
1
- 450 ns
250 kHz
RT = = 12.5 k:
284 pF
(7)
The nearest standard value of 12.4 kΩ was chosen for RT.

8.2.2.3 Output Inductor

The inductor value is determined based on the operating frequency, load current, ripple current and the input and
output voltages.

IO IPP

0
1
T=
fSW

Figure 34. Inductor Current

Knowing the switching frequency (fSW), maximum ripple current (IPP), maximum input voltage (VIN(MAX)) and the
nominal output voltage (VOUT), the inductor value can be calculated:
VOUT VOUT
L= x 1-
IPP x fSW VIN(MAX) (8)
The maximum ripple current occurs at the maximum input voltage. Typically, IPP is 20% to 40% of the full load
current. When running diode emulation mode, the maximum ripple current should be less than twice the
minimum load current. For full synchronous operation, higher ripple current is acceptable. Higher ripple current
allows for a smaller inductor size, but places more of a burden on the output capacitor to smooth the ripple
current for low output ripple voltage. For this example, 40% ripple current was chosen for a smaller sized
inductor.
5V 5V
L= x 1- = 6.5 PH
0.4 x 7A x 250kHz 60V (9)

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The nearest standard value of 6 µH will be used. The inductor must be rated for the peak current to prevent
saturation. During normal operation, the peak current occurs at maximum load current plus maximum ripple.
During overload conditions with properly scaled component values, the peak current is limited to VCS(TH) / RS
(See Current Sense Resistor). At the maximum input voltage with a shorted output, the valley current must fall
below VCS(TH) / RS before the high-side MOSFET is allowed to turn on. The peak current in steady state will
increase to VIN(MAX) x tON(min) / L above this level. The chosen inductor must be evaluated for this condition,
especially at elevated temperature where the saturation current rating may drop significantly.

8.2.2.4 Current Sense Resistor

The current limit is set by the current sense resistor value (RS).
VCS(TH)
ILIM =
RS (10)
For a 5V output, the maximum current sense signal occurs at the minimum input voltage, so RS is calculated
from:
VCS(TH)
RS d
VOUT VOUT
IO + x 1+
2 x L x fSW VIN(MIN)
(11)
For this example VCCX = 0 V, so VCS(TH) = 0.11 V. The current sense resistor is calculated as:
0.11V
RS d d 0.011:
5V 5V
7A + x 1+
2 x 6 PH x 250 kHz 7V
(12)
The next lowest standard value of 10 mΩ was chosen for RS.

8.2.2.5 Ramp Capacitor

With the inductor and sense resistor value selected, the value of the ramp capacitor (CRAMP) necessary for the
emulation ramp circuit is:
gm x L
CRAMP ,
A x RS
where
• L is the value of the output inductor in Henrys
• gm is the ramp generator transconductance (5 µA/V)
• A is the current sense amplifier gain (10 V/V) (13)
For the 5-V output design example, the ramp capacitor is calculated as:
5 PA/V x 6 PH
CRAMP = = 300 pF
10V/V x 10 m: (14)
The next lowest standard value of 270 pF was selected for CRAMP. A COG-type capacitor with 5% or better
tolerance is recommended.

8.2.2.6 Output Capacitors

The output capacitors smooth the inductor ripple current and provide a source of charge for transient loading
conditions. For this design example, five 100-µF ceramic capacitors where selected. Ceramic capacitors provide
very low equivalent series resistance (ESR), but can exhibit a significant reduction in capacitance with DC bias.
From the manufacturer’s data, the ESR at 250 kHz is 2 mΩ / 5 = 0.4 mΩ, with a 36% reduction in capacitance at
5 V. This is verified by measuring the output ripple voltage and frequency response of the circuit. The
fundamental component of the output ripple voltage is calculated as:

'VOUT = IPP x
€ ESR2 +
1
8 x fSW x COUT
2

(15)
With typical values for the 5-V design example:
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2
1
'VOUT = 3A x 0.4 m:2 +
8 x 250 kHz x 320 PF

'VOUT = 4.8 mV (16)

8.2.2.7 Input Capacitors

The regulator supply voltage has a large source impedance at the switching frequency. Good quality input
capacitors are necessary to limit the ripple voltage at the VIN pin while supplying most of the switch current
during the on-time. When the buck switch turns on, the current into the switch steps to the valley of the inductor
current waveform, ramps up to the peak value, and then drops to zero at turnoff. The input capacitors should be
selected for RMS current rating and minimum ripple voltage. A good approximation for the required ripple current
rating is IRMS > IOUT / 2.
Quality ceramic capacitors with a low ESR were selected for the input filter. To allow for capacitor tolerances and
voltage rating, four 2.2-µF, 100-V ceramic capacitors were used for the typical application circuit. With ceramic
capacitors, the input ripple voltage will be triangular and peak at 50% duty cycle. Taking into account the
capacitance change with DC bias, the input ripple voltage is approximated as:
IOUT 7A
'VIN = = = 1V
4 x fSW x CIN 4 x 250 kHz x 7 PF
(17)
When the converter is connected to an input power source, a resonant circuit is formed by the line impedance
and the input capacitors. If step input voltage transients are expected near the maximum rating of the LM5116, a
careful evaluation of the ringing and possible overshoot at the device VIN pin should be completed. To minimize
overshoot make CIN > 10 x LIN. The characteristic source impedance and resonant frequency are:
LIN 1
ZS = fS =
CIN 2S LIN x CIN
(18)
The converter exhibits a negative input impedance which is lowest at the minimum input voltage:
VIN2
ZIN = -
POUT (19)
The damping factor for the input filter is given by:
1 RIN + ESR ZS
G= +
2 ZS ZIN

where
• RIN is the input wiring resistance
• ESR is the series resistance of the input capacitors (20)
The term ZS / ZIN will always be negative due to ZIN.
When δ = 1, the input filter is critically damped. This may be difficult to achieve with practical component values.
With δ < 0.2, the input filter will exhibit significant ringing. If δ is zero or negative, there is not enough resistance
in the circuit and the input filter will sustain an oscillation. When operating near the minimum input voltage, an
aluminum electrolytic capacitor across CIN may be needed to damp the input for a typical bench test setup. Any
parallel capacitor should be evaluated for its RMS current rating. The current will split between the ceramic and
aluminum capacitors based on the relative impedance at the switching frequency.

8.2.2.8 VCC Capacitor

The primary purpose of the VCC capacitor (CVCC) is to supply the peak transient currents of the LO driver and
bootstrap diode (D1) as well as provide stability for the VCC regulator. These current peaks can be several
amperes. The recommended value of CVCC should be no smaller than 0.47 µF, and should be a good quality, low
ESR, ceramic capacitor located at the pins of the IC to minimize potentially damaging voltage transients caused
by trace inductance. A value of 1 µF was selected for this design.

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8.2.2.9 Bootstrap Capacitor

The bootstrap capacitor (CHB) between the HB and SW pins supplies the gate current to charge the high-side
MOSFET gate at each cycle’s turnon as well as supplying the recovery charge for the bootstrap diode (D1).
These current peaks can be several amperes. The recommended value of the bootstrap capacitor is at least 0.1
µF, and should be a good quality, low ESR, ceramic capacitor located at the pins of the IC to minimize potentially
damaging voltage transients caused by trace inductance. The absolute minimum value for the bootstrap
capacitor is calculated as:
Qg
CHB t
'VHB

where
• Qg is the high-side MOSFET gate charge
• ΔVHB is the tolerable voltage droop on CHB (21)
CHB is typically less than 5% of VCC. A value of 1 µF was selected for this design.

8.2.2.10 Soft Start Capacitor

The capacitor at the SS pin (CSS) determines the soft-start time, which is the time for the reference voltage and
the output voltage to reach the final regulated value. The soft-start time tSS should be substantially longer than
the time required to charge COUT to VOUT at the maximum output current. To meet this requirement:
tSS > VOUT x COUT / (ICURRENT LIMIT – IOUT) (22)
The value of CSS for a given time is determined from:
tSS x 10 PA
CSS =
1.215V (23)
For this application, a value of 0.01 µF was chosen for a soft-start time of 1.2 ms.

8.2.2.11 Output Voltage Divider

RFB1 and RFB2 set the output voltage level, the ratio of these resistors is calculated from:
RFB2 VOUT
= -1
RFB1 1.215V (24)
RFB1 is typically 1.21 kΩ for a divider current of 1 mA. The divider current can be reduced to 100 µA with
RFB1=12.1 kΩ. For the 5V output design example used here, RFB1 = 1.21 kΩ and RFB2 = 3.74 kΩ.

8.2.2.12 UVLO Divider

A voltage divider and filter can be connected to the UVLO pin to set a minimum operating voltage VIN(MIN) for the
regulator. If this feature is required, the following procedure can be used to determine appropriate resistor values
for RUV2, RUV1 and CFT.
1. RUV2 must be large enough such that in the event of a current limit, the internal UVLO switch can pull UVLO
< 200 mV. This can be accomplished if: RUV2 > 500 x VIN(MAX)Where VIN(MAX) is the maximum input voltage
and RUV2 is in ohms.
2. With an appropriate value for RUV2, RUV1 can be selected using the following equation:
RUV2
RUV1 = 1.215 x
VIN(MIN) + (5 PA x RUV2) - 1.215
Where VIN(MIN) is the desired shutdown voltage.
3. Capacitor CFT provides filtering for the divider and determines the off-time of the “hiccup” duty cycle during
current limit. When CFT is used in conjunction with the voltage divider, a diode across the top resistor should
be used to discharge CFT in the event of an input undervoltage condition.
RUV1 x RUV2 1.215 x (RUV1 + RUV2)
tOFF = - x CFT x ln 1 -
RUV1 + RUV2 VIN x RUV1

If undervoltage shutdown is not required, RUV1 and RUV2 can be eliminated and the off-time becomes:

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1.215V
tOFF = CFT x
5 PA (25)
The voltage at the UVLO pin should never exceed 16 V when using an external set-point divider. It may be
necessary to clamp the UVLO pin at high input voltages. For the design example, RUV2 = 102 kΩ and RUV1 = 21
kΩ for a shut-down voltage of 6.6 V. If sustained short circuit protection is required, CFT ≥ 1 µF will limit the short
circuit power dissipation. D2 may be installed when using CFT with RUV1 and RUV2.

8.2.2.13 MOSFETs
Selection of the power MOSFETs is governed by the same tradeoffs as switching frequency. Breaking down the
losses in the high-side and low-side MOSFETs is one way to determine relative efficiencies between different
devices. When using discrete SO-8 MOSFETs the LM5116 is most efficient for output currents of 2A to 10A.
Losses in the power MOSFETs can be broken down into conduction loss, gate charging loss, and switching loss.
Conduction, or I2R loss PDC, is approximately:
PDC(HO-MOSFET) = D x (IO2 x RDS(ON) x 1.3) (26)
PDC(LO-MOSFET) = (1 - D) x (IO2 x RDS(ON) x 1.3) (27)
Where D is the duty cycle. The factor 1.3 accounts for the increase in MOSFET on-resistance due to heating.
Alternatively, the factor of 1.3 can be ignored and the on-resistance of the MOSFET can be estimated using the
RDS(ON) vs Temperature curves in the MOSFET datasheet. Gate charging loss, PGC, results from the current
driving the gate capacitance of the power MOSFETs and is approximated as:
PGC = n x VCC x Qg x fSW (28)
Qg refer to the total gate charge of an individual MOSFET, and ‘n’ is the number of MOSFETs. If different types
of MOSFETs are used, the ‘n’ term can be ignored and their gate charges summed to form a cumulative Qg.
Gate charge loss differs from conduction and switching losses in that the actual dissipation occurs in the LM5116
and not in the MOSFET itself. Further loss in the LM5116 is incurred as the gate driving current is supplied by
the internal linear regulator. The gate drive current supplied by the VCC regulator is calculated as:
IGC =(Qgh + Qgl) x fSW
where
• Qgh + Qgl represent the gate charge of the HO and LO MOSFETs at VGS = VCC (29)
To ensure start-up, IGC should be less than the VCC current limit rating of 15 mA minimum when powered by the
internal 7.4-V regulator. Failure to observe this rating may result in excessive MOSFET heating and potential
damage. The IGC run current may exceed 15 mA when VCC is powered by VCCX.
PSW = 0.5 x VIN x IO x (tR + tF) x fSW
where
• tR and tF are the rise and fall times of the MOSFET (30)
Switching loss is calculated for the high-side MOSFET only. Switching loss in the low-side MOSFET is negligible
because the body diode of the low-side MOSFET turns on before the MOSFET itself, minimizing the voltage from
drain to source before turnon. For this example, the maximum drain-to-source voltage applied to either MOSFET
is 60 V. VCC provides the drive voltage at the gate of the MOSFETs. The selected MOSFETs must be able to
withstand 60 V plus any ringing from drain to source, and be able to handle at least VCC plus ringing from gate
to source. A good choice of MOSFET for the 60-V input design example is the Si7850DP. It has an RDS(ON) of 20
mΩ, total gate charge of 14 nC, and rise and fall times of 10 ns and 12 ns, respectively. In applications where a
high step-down ratio is maintained for normal operation, efficiency may be optimized by choosing a high-side
MOSFET with lower Qg, and low-side MOSFET with lower RDS(ON).
For higher voltage MOSFETs which are not true logic level, it is important to use the UVLO feature. Choose a
minimum operating voltage which is high enough for VCC and the bootstrap (HB) supply to fully enhance the
MOSFET gates. This will prevent operation in the linear region during power-on or power-off which can result in
MOSFET failure. Similar consideration must be made when powering VCCX from the output voltage. For the
high-side MOSFET, the gate threshold should be considered and careful evaluation made if the gate threshold
voltage exceeds the HO driver UVLO.

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8.2.2.14 MOSFET Snubber

A resistor-capacitor snubber network across the low-side MOSFET reduces ringing and spikes at the switching
node. Excessive ringing and spikes can cause erratic operation and couple spikes and noise to the output.
Selecting the values for the snubber is best accomplished through empirical methods. First, make sure the lead
lengths for the snubber connections are very short. Start with a resistor value between 5 Ω and 50 Ω. Increasing
the value of the snubber capacitor results in more damping, but higher snubber losses. Select a minimum value
for the snubber capacitor that provides adequate damping of the spikes on the switch waveform at high load.

8.2.2.15 Error Amplifier Compensation

RCOMP, CCOMP and CHF configure the error amplifier gain characteristics to accomplish a stable voltage loop gain.
One advantage of current mode control is the ability to close the loop with only two feedback components, RCOMP
and CCOMP. The voltage loop gain is the product of the modulator gain and the error amplifier gain. For the 5-V
output design example, the modulator is treated as an ideal voltage-to-current converter. The DC modulator gain
of the LM5116 can be modeled as:
DC Gain(MOD) = RLOAD / (A x RS) (31)
The dominant low frequency pole of the modulator is determined by the load resistance (RLOAD) and output
capacitance (COUT). The corner frequency of this pole is:
fP(MOD) = 1 / (2π x RLOAD x COUT) (32)
For RLOAD = 5 V / 7 A = 0.714 Ω and COUT = 320 µF (effective) then fP(MOD) = 700 Hz
DC Gain(MOD) = 0.714 Ω / (10 x 10 mΩ) = 7.14 = 17 dB
For the 5-V design example the modulator gain vs. frequency characteristic was measured as shown in
Figure 35.

Figure 35. Modulator Gain and Phase

Components RCOMP and CCOMP configure the error amplifier as a type II configuration. The DC gain of the
amplifier is 80 dB which has a pole at low frequency and a zero at fZEA = 1 / (2π x RCOMP x CCOMP). The error
amplifier zero cancels the modulator pole leaving a single pole response at the crossover frequency of the
voltage loop. A single pole response at the crossover frequency yields a very stable loop with 90° of phase
margin. For the design example, a target loop bandwidth (crossover frequency) of one-tenth the switching
frequency or 25 kHz was selected. The compensation network zero (fZEA) should be selected at least an order of
magnitude less than the target crossover frequency. This constrains the product of RCOMP and CCOMP for a
desired compensation network zero 1 / (2π x RCOMP x CCOMP) to be 2.5 kHz. Increasing RCOMP, while
proportionally decreasing CCOMP, increases the error amp gain. Conversely, decreasing RCOMP while
proportionally increasing CCOMP, decreases the error amp gain. For the design example CCOMP was selected as
3300 pF and RCOMP was selected as 18 kΩ. These values configure the compensation network zero at 2.7 kHz.
The error amp gain at frequencies greater than fZEA is: RCOMP / RFB2, which is approximately 4.8 (13.6 dB).

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Figure 36. Error Amplifier Gain and Phase

The overall voltage loop gain can be predicted as the sum (in dB) of the modulator gain and the error amp gain.

Figure 37. Overall Voltage Loop Gain and Phase

If a network analyzer is available, the modulator gain can be measured and the error amplifier gain can be
configured for the desired loop transfer function. If a network analyzer is not available, the error amplifier
compensation components can be designed with the guidelines given. Step load transient tests can be
performed to verify acceptable performance. The step load goal is minimum overshoot with a damped response.
CHF can be added to the compensation network to decrease noise susceptibility of the error amplifier. The value
of CHF must be sufficiently small since the addition of this capacitor adds a pole in the error amplifier transfer
function. This pole must be well beyond the loop crossover frequency. A good approximation of the location of
the pole added by CHF is: fP2 = fZEA x CCOMP / CHF. The value of CHF was selected as 100 pF for the design
example.

8.2.2.16 Comprehensive Equations

8.2.2.16.1 Current Sense Resistor and Ramp Capacitor

T = 1 / fSW, gm = 5 µA/V, A = 10 V/V. IOUT is the maximum output current at current limit.
General Method for VOUT < 5 V:
VCS(TH)
RS =
5 - VOUT
1+
VOUT x T VOUT VOUT x T VIN(MIN)
IOUT - x 1- + x
2xL VIN(MIN) L 5 - VOUT
1+
VIN(MAX)
(33)

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gm x L 5 - VOUT
CRAMP = x 1+
A x RS VIN(MAX)
(34)
General Method for 5 V < VOUT < 7.5 V:
VCS(TH)
RS =
VOUT x T VOUT VOUT x T
IOUT - x 1- +
2xL VIN(MIN) L (35)
gm x L 5 - VOUT
CRAMP = x 1+
A x RS VIN(MIN)
(36)
Best Performance Method:
This minimizes the current limit deviation due to changes in line voltage, while maintaining near optimal slope
compensation.
Calculate optimal slope current, IOS = (VOUT / 3) x 10 µA/V. For example, at VOUT = 7.5 V, IOS = 25 µA.
VCS(TH) IOS x L
RS = CRAMP =
VOUT x T VOUT x A x RS
IOUT +
L
(37)
Calculate VRAMP at the nominal input voltage.
VOUT ((VIN ± VOUT) x gm + IOS) x T
VRAMP = x
VIN CRAMP
(38)
For VOUT > 7.5 V, install a resistor from the RAMP pin to VCC.
VCC - VRAMP
RRAMP =
IOS - 25 PA
(39)
VCC

RRAMP

RAMP

CRAMP

Figure 38. RRAMP to VCC for VOUT > 7.5 V

For VOUT < 7.5 V, a negative VCC is required. This can be made with a simple charge pump from the LO gate
output. Install a resistor from the RAMP pin to the negative VCC.
VCC ± 0.5V + VRAMP
RRAMP =
25 PA - IOS
(40)
LO
10 nF 1N914

RRAMP 10 nF
RAMP
-VCC
CRAMP

Figure 39. RRAMP to -VCC for VOUT < 7.5 V

If a large variation is expected in VCC, say for VIN < 11 V, a Zener regulator may be added to supply a constant
voltage for RRAMP.

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8.2.2.16.2 Modulator Transfer Function

The following equations can be used to calculate the control-to-output transfer function:
s
1+
VOUT RLOAD 1 ZZ
= x x
VCOMP A x RS RLOAD s s s2
1+ 1+ x 1+ +
Km x A x RS ZP Zn x Q Zn2
(41)
1
Km =
(D ± 0.5) x A x RS x T VSL
+ (1 - 2 x D) x KSL +
L VIN (42)
gm x T IOS x T
KSL = VSL =
CRAMP CRAMP
(43)
1 1 1 1 S
ZZ = ZP = x + Zn =
COUT x ESR COUT RLOAD Km x A x RS T
(44)
(VIN ± VOUT) x KSL + VSL VIN x A x RS
Se = Sn =
T L
Se 1
mC = Q=
Sn S x (mC ± 0.5) (45)
Km is the effective DC gain of the modulating comparator. The duty cycle D = VOUT / VIN. KSL is the proportional
slope compensation term. VSL is the fixed slope compensation term. Slope compensation is set by mc, which is
the ratio of the external ramp to the natural ramp. The switching frequency sampling gain is characterized by ωn
and Q, which accounts for the high frequency inductor pole.
For VSL without RRAMP, use IOS = 25 µA
For VSL with RRAMP to VCC, use IOS = 25 µA + VCC/RRAMP
For VSL with RRAMP to -VCC, use IOS = 25 µA - VCC/RRAMP

8.2.2.16.3 Error Amplifier Transfer Function

The following equations are used to calculate the error amplifier transfer function:
VCOMP 1
= -GEA(S) x
VOUT(FB) 1 s GEA(S)
1+ + x 1+
AOL ZBW KFB
(46)
s
1+
ZZEA RFB1
GEA(S) = KFB =
s s RFB1 + RFB2
x 1+ Z
ZO HF
(47)
1 1
ZZEA = ZO =
CCOMP x RCOMP (CHF + CCOMP) x RFB2

(CHF + CCOMP)
ZHF =
CHF x CCOMP x RCOMP
(48)
Where AOL = 10,000 (80 dB) and ωBW = 2π x fBW. GEA(S) is the ideal error amplifier gain, which is modified at DC
and high frequency by the open loop gain of the amplifier and the feedback divider ratio.

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8.2.3 Application Curves

Figure 40. Efficiency With 6-µH Copper Inductor Figure 41. Short Circuit Recovery Into Resistive Load With
C7 = 1 µF and D2 Installed

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9 Power Supply Recommendations

The LM5116 is a power management device. The power supply for the device is any DC voltage source within
the specified input range (see Design Requirements).

10 Layout

10.1 Layout Guidelines

In a buck regulator, the primary switching loop consists of the input capacitor, MOSFETs, and current sense
resistor. Minimizing the area of this loop reduces the stray inductance and minimizes noise and possible erratic
operation. The input capacitor should be placed as close as possible to the MOSFETs, with the VIN side of the
capacitor connected directly to the high-side MOSFET drain, and the GND side of the capacitor connected as
close as possible to the low-side source or current sense resistor ground connection. A ground plane in the PC
board is recommended as a means to connect the quiet end (input voltage ground side) of the input filter
capacitors to the output filter capacitors and the PGND pin of the regulator. Connect all of the low power ground
connections (CSS, RT, CRAMP) directly to the regulator AGND pin. Connect the AGND and PGND pins together
through to a topside copper area covering the entire underside of the device. Place several vias in this underside
copper area to the ground plane.
The highest power dissipating components are the two power MOSFETs. The easiest way to determine the
power dissipated in the MOSFETs is to measure the total conversion losses (PIN – POUT), then subtract the
power losses in the output inductor and any snubber resistors. The resulting power losses are primarily in the
switching MOSFETs.
If a snubber is used, the power loss can be estimated with an oscilloscope by observation of the resistor voltage
drop at both turnon and turnoff transitions. Assuming that the RC time constant is << 1 / fSW.
P = C x V2 x fSW (49)
The regulator has an exposed thermal pad to aid power dissipation. Selecting MOSFETs with exposed pads will
aid the power dissipation of these devices. Careful attention to RDS(ON) at high temperature should be observed.
Also, at 250 kHz, a MOSFET with low gate capacitance will result in lower switching losses.

10.2 Layout Example

Controller

Place controller as QL
close to the switches

Inductor
QH
RSENSE

CIN COUT

CIN COUT

VIN GND GND VOUT

Figure 42. Layout Example

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11 Device and Documentation Support

11.1 Custom Design with WEBENCH Tools

Click here to create a custom design using the LM5116 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. WEBENCH Power Designer provides you with a customized schematic along with a list of materials with real
time pricing and component availability.
4. In most cases, you will also be able to:
– Run electrical simulations to see important waveforms and circuit performance,
– Run thermal simulations to understand the thermal performance of your board,
– Export your customized schematic and layout into popular CAD formats,
– Print PDF reports for the design, and share your design with colleagues.
5. Get more information about WEBENCH tools at www.ti.com/webench.

11.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.

11.3 Device Support

11.3.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.3.2 Design Support

WEBENCH software uses an iterative design procedure and accesses comprehensive databases of
components. For more details, go to www.ti.com/webench.

11.4 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.

11.5 Trademarks
E2E is a trademark of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

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11.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

Copyright © 2007–2015, Texas Instruments Incorporated Submit Documentation Feedback 35

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 PACKAGE OPTION ADDENDUM

www.ti.com 6-Feb-2020

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)

LM5116MH NRND HTSSOP PWP 20 73 TBD Call TI Call TI -40 to 150 LM5116
MH
LM5116MH/NOPB ACTIVE HTSSOP PWP 20 73 Green (RoHS Call TI | SN Level-1-260C-UNLIM -40 to 150 LM5116
& no Sb/Br) MH
LM5116MHX NRND HTSSOP PWP 20 2500 TBD Call TI Call TI -40 to 150 LM5116
MH
LM5116MHX/NOPB ACTIVE HTSSOP PWP 20 2500 Green (RoHS Call TI | SN Level-1-260C-UNLIM -40 to 150 LM5116
& no Sb/Br) MH

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 6-Feb-2020

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF LM5116 :

NOTE: Qualified Version Definitions:

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 29-Sep-2019

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
LM5116MHX HTSSOP PWP 20 2500 330.0 16.4 6.95 7.1 1.6 8.0 16.0 Q1
LM5116MHX/NOPB HTSSOP PWP 20 2500 330.0 16.4 6.95 7.1 1.6 8.0 16.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 29-Sep-2019

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM5116MHX HTSSOP PWP 20 2500 367.0 367.0 35.0
LM5116MHX/NOPB HTSSOP PWP 20 2500 367.0 367.0 35.0

Pack Materials-Page 2
 MECHANICAL DATA
PWP0020A

MXA20A (Rev C)

www.ti.com
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