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Biasing of Discrete MOSFET Amplifiers

This document provides guidelines for biasing discrete MOSFET amplifiers. It recommends setting the source resistor RS to VDD/4ID based on the desired drain current ID. The gate voltage VG should be set to VGS = √(ID/K) + Vt. Resistors R1 and R2 should be selected using voltage division to set VG, and they should be as large as practical, such as R1+R2=250kΩ. The drain voltage VD should be set halfway between VDD and VG-Vt to avoid cutoff and triode modes. Equations are provided to calculate the component values to achieve this biasing scheme.

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Rafidul Islam
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0% found this document useful (0 votes)
239 views4 pages

Biasing of Discrete MOSFET Amplifiers

This document provides guidelines for biasing discrete MOSFET amplifiers. It recommends setting the source resistor RS to VDD/4ID based on the desired drain current ID. The gate voltage VG should be set to VGS = √(ID/K) + Vt. Resistors R1 and R2 should be selected using voltage division to set VG, and they should be as large as practical, such as R1+R2=250kΩ. The drain voltage VD should be set halfway between VDD and VG-Vt to avoid cutoff and triode modes. Equations are provided to calculate the component values to achieve this biasing scheme.

Uploaded by

Rafidul Islam
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

11/6/2003 Biasing of Discrete MOSFET Amplifiers 1/4

Biasing of Discrete
MOSFET Amplifiers
VDD VDD

It is difficult to give “rule-of-


RD ID thumb” values that will always
R1 work well for MOSFET DC
+ bias design.

VDS But, try this procedure, but


+ check your results to ensure
VGS - success!
-
R2 RS

1. Given the desired value of ID, make source voltage


Vs = VDD 4 , i.e. set the source resistor RS to:

Vs V
RS = = DD (1)
ID 4ID
11/6/2003 Biasing of Discrete MOSFET Amplifiers 2/4

2. Now determine the required value of VGS . Since


ID = K (VGS −Vt )2 , we find that VGS should be:

ID
VGS = +Vt
K

3. Set the required value of gate voltage VG .

Note that:
VG = VGS +VS

Thus, we can add the results of the previous two steps to find
the required value of the gate voltage VG .

To set the gate voltage to this value, we must select the proper
values of resistors R1 and R2 . Since the gate current is zero
(iG = 0 ), we find from voltage division that:

 R2  VDD
VG = VDD   = (2)
 R1 + R2   R1  + 1
 R2 

Note this equation determines the ratio of resistors R1 and R2 ,


but not the resistors themselves. We need a second equation
to explicitly determine the resistors values—the sum of the two
resistances, for example.
11/6/2003 Biasing of Discrete MOSFET Amplifiers 3/4

We find that making the resistances R1 and R2 as large as


possible is very desirable! This will typically maximize the
amplifier input resistance, as well as result in minimum power
dissipation.

As a result, we make the resistors as large a practicable. For


example:
R1 + R2 = 250 K (3)

4. Set the required value of DC drain voltage VD .

Recall that:

a) we require VD  VDD = L+ to avoid cutoff mode.

b) And, we require that VDS VGS −Vt to avoid triode mode.

Note that VDS VGS −Vt means that:

VDS +VS > VGS −Vt +VS

But, VDS +VS = VD and VGS +VS = VG , so that we find the drain
voltage VD must be:
VD VG −Vt = L−

to avoid entering the MOSFET triode mode.


11/6/2003 Biasing of Discrete MOSFET Amplifiers 4/4

Summarizing, we require that the DC drain voltage should be:

a) much less than VDD =L+ to avoid cutoff.

b) much greater than (VG −Vt ) =L- to avoid triode.

Solution: set the drain voltage VD to a value half-way between


VDD and VG −Vt !

In other words, set the DC drain voltage to be:

VDD + (VG −Vt )


VD =
2

To achieve this, we must select the drain resistor RD so that:

VDD −VD VDD − (VG −Vt )


RD = = (4)
ID 2 ID

Thus, use equations (1), (2), (3), and (4) to determine the
standard DC bias design (i.e., R1 , R2 , RS , and RD ) for MOSFET
amplifiers.

If I were you, I’d make sure I understood


this material well enough that I could also
bias a non-standard MOSFET amplifier
problem.

It’s not enough to simply know how, you must


also know why!

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