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Unit 1 Introduction To Analog Electronics: BJT-Bipolar Junction Transistor

This document provides an introduction to analog electronics and bipolar junction transistors (BJTs). It discusses different types of materials and their conductivity. It then explains the basic operation and characteristics of PN diodes and BJTs. The three common configurations of BJTs are described - common base (CB), common emitter (CE), and common collector (CC) - along with their input and output characteristics. Key parameters like current gain (alpha and beta) are also defined. The document compares the three configurations and provides examples of calculating current values based on given transistor specifications.

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0% found this document useful (0 votes)
397 views

Unit 1 Introduction To Analog Electronics: BJT-Bipolar Junction Transistor

This document provides an introduction to analog electronics and bipolar junction transistors (BJTs). It discusses different types of materials and their conductivity. It then explains the basic operation and characteristics of PN diodes and BJTs. The three common configurations of BJTs are described - common base (CB), common emitter (CE), and common collector (CC) - along with their input and output characteristics. Key parameters like current gain (alpha and beta) are also defined. The document compares the three configurations and provides examples of calculating current values based on given transistor specifications.

Uploaded by

Di3 Strider07
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Unit 1

Introduction to Analog Electronics

BJT- Bipolar Junction Transistor


Types of Materials
Insulators
• An insulator is a material that does not conduct electrical
current under normal conditions.
• Rubber, plastics, glass, mica, and quartz.

Conductors
• A conductor is a material that easily conducts electrical
current. Most metals are good conductors.
• Copper (Cu), silver (Ag), gold (Au), and aluminum (Al)
Semiconductors
• A semiconductor is a material that is between conductors and
insulators in its ability to conduct electrical current.
• Silicon (Si), and germanium (Ge)
PN Diode – Forward Bias
PN Diode – Reverse Bias
Bipolar Junction Transistor
BJT
• As the Bipolar Transistor is a three terminal device, there are
basically three possible ways to connect it within an electronic
circuit with one terminal being common to both the input and
output.
• Common Base Configuration (CB) – has Voltage Gain but no
Current Gain.
• Common Emitter Configuration (CE) – has both Current and
Voltage Gain.
• Common Collector Configuration (CC) – has Current Gain but no
Voltage Gain.
IE = IB + IC
Characteristics of CE Configuration

• In common emitter
configuration, the emitter
terminal is grounded.
• The input signal is applied
between the base and emitter
terminals while the output
signal is taken between the
collector and emitter
terminals.
• The supply voltage between
base and emitter is denoted
by VBE while the supply voltage
between collector and emitter
is denoted by VCE.
Common Emitter Transistor
Input Characteristics - CE Configuration
• Due to forward bias, the emitter-base
junction acts as a forward biased diode and
due to reverse bias, the collector-base
junction acts as a reverse biased diode.
• Therefore, the width of the depletion
region at the emitter-base junction is very
small whereas the width of the depletion
region at the collector-base junction is very
large.
• If the output voltage VCE applied to the
collector-base junction is further increased,
the depletion region width further
increases.
• The base region is lightly doped as
compared to the collector region.
• So the depletion region penetrates more
into the base region and less into the
collector region.
• As a result, the width of the base region
decreases which in turn reduces the input
current (IB) produced in the base region.
Output Characteristics - CE Configuration

• To determine the output


characteristics, the input
current or base current IB is
kept constant at 0μA and the
output voltage VCE is increased
from zero volts to different
voltage levels.
• For each level of output
voltage,
the corresponding output
current (IC) is recorded.
Output Characteristics - CE Configuration

Saturation Cut - Off Active region


• Both Emitter Base and • In this region both
Base Collector • Base emitter
junctions of the junction is forward
junctions of the transistor are reverse
transistor are forward biased. biased and Base
biased. • Hence transistor in Collector junction
• In this region high cut off does not will be reverse
currents flows through conduct any currents biased in a transistor.
the transistor, as both expect for small
junctions of the • Transistor is used as
reverse saturation
transistor are forward currents that flow amplifier in this
biased and bulk across junctions. region.
resistance offered is
very much less. • Transistor in cut-off
region is considered
• Transistor in saturation as off state in digital
region is considered as logic.
on state in digital logic.
CB Configuration
COMMON BASE TRANSISTORS
CB Configuration Characteristics
Input Characteristics Input Characteristics
• When the output voltage (VCB)
is increased from zero volts to
a certain voltage level (8
volts), the emitter current flow
will be increased which in turn
reduces the depletion region
width at emitter-base
junction.
• As a result, the cut in voltage
will be reduced. Therefore, the
curves shifted towards the left
side for higher values of
output voltage VCB.
Current Gain (α) = IC/IE
CB Characteristics
Output Characteristics Output Characteristics
• From the above characteristics,
we can see that for a constant
input current IE, when the output
voltage VCB is increased, the
output current IC remains
constant.
• At saturation region, both
emitter-base junction JE and
collector-base junction JC are
forward biased.
• From the above graph, we can see
that a sudden increase in the
collector current when the output
voltage VCB makes the
collector-base junction JC forward
biased.
CC Configuration
CC Configuration Characteristics
Input Characteristics Input Characteristics
• The input characteristic of
the common collector
configuration is drawn
between collector base
voltage VBC and base
current IB at constant emitter
current voltage VCE.
• The value of the output
voltage VCE changes with
respect to the input voltage
VBC and IB With the help of
these values, input
characteristic curve is drawn
Current Gain (γ) = IE/IB
CC Configuration
Output Characteristics Output Characteristics
• The transistor operates in
active region when the base
current increases and reaches
to saturation region.
• The graph is plotted by
keeping the base current
IB constant and varying the
emitter-collector voltage VCE,
the values of output current
IE are noticed with respect to
VCE.
• By using the VCE and IE at
constant IB the output
characteristic curve is drawn.
BJT
Advantages of BJT

• High driving capability

• High frequency operation

• Digital logic family has an emitter coupled logic used in BJTs as a


digital switch

Applications of BJT

• Following are the two different types of applications in BJT they are

• Switching

• Amplification
Relationship of α and β
COMPARISON OF CB,CE,CC
                                                                          
1. In a common base connection, current amplification factor is 0.9. If the
emitter current is 1mA, determine the value of base current.
Solution :

                                    

2. In a common base connection, IC = 0.95 mA and IB = 0.05


mA. Find the value of α.
Solution :
  3. In a common base connection, IE = 1mA, IC = 0.95mA.
                                                                                                         
Calculate the value of IB .
Solution :                                                   

4. In a common base connection, the emitter current is


1mA. If the emitter circuit is open, the collector current
is 50 μA. Find the total collector current. Given that α = 
0.92.
Solution :
                                                                                                              
5. Calculate IE in a transistor for which β = 50 and IB = 20
μA.
Solution :
                                                                         
6. Find the α rating of the transistor shown in Fig. Hence
determine the value of IC using both α and β rating of the
transistor.                                                  

                                                                                             
DC BIASING
Transistor Biasing is the process of setting a transistors DC
operating voltage or current conditions to the correct level so
that any AC input signal can be amplified correctly by the
transistor
DC BIASING
Apply KVL in output side

When Ic = 0

When Vce = 0
DC BIASING

Output side
Input side
DC BIASING

• The correct operating point requires the


selection of bias resistors and load
resistors to provide the appropriate
input current and collector voltage
conditions.

• The correct biasing point for a bipolar


transistor, either NPN or PNP, generally
lies somewhere between the two
extremes of operation with respect to it
being either “fully-ON” or “fully-OFF”
along its DC load line. This central
operating point is called the “Quiescent
Operating Point”, or Q-point for short.
Q - point
Types of DC biasing
• Fixed bias
• Collector-to-base bias

• Fixed bias with emitter resistor


• Voltage divider bias or potential divider

• Emitter bias
Uses of BJT
❑ The bipolar junction transistor (BJT) is used in logic circuits.
❑ The BJT is used as an oscillator.
❑ It is used as an amplifier.
❑ It is used as a multivibrator.
❑ For wave shaping, it is used in clipping circuits.
❑ Used as a detector or demodulator.
❑ It is also used as a modulator.
❑ Used in timer and time delay circuits.
❑ It is used in electronics switch.
❑ It is used in switching circuits.

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