POWER ELCTRONICS-I

SCR CONSTRUCTION & WORKING

By

CH GOURI PRASAD
Department of Electrical & Electronics Engineering
GPT-MBNR

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 Construction of SCR

Threaded Stud
Anode ( aluminium)

J1

J2

J3

Gate terminal Welded

to P region

Cathode ( aluminium)
2
 Construction of SCR
Anode
Anode

P
J1
N
J2
Gate P
J3 Gate
N

Cathode
Cathode

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CONSTRUCTIONAL OF SCR
 SCR – is a Four layer, Three terminal, Three
P-N junction device

 Outer P region is Called Anode

 Outer N region is called Cathode

 Inner P region is called Gate

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 Two Transistor Analogy of SCR
A

P
Two transistor model of SCR is
obtained by splitting the two N N
middle layers into two
separate parts. P P
G
N

K
FIG.3 ( a ) Schematic Diagram
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 Two Transistor Analogy of SCR (contd..)
A
• Transistor T1 - PNP and

Transistor T2 -NPN P

N N

 Emitter E of T1 is Anode,
G P P
Emitter E of T2 is Cathode
N

 Gate G is positive wrt

Cathode. k

( b ) Two transistor Model

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Two Transistor Analogy of SCR (contd..)
A

Ia

I B1 = IC2
α1 , β 1

IC2
J2
IC1

G α2 , β2
Ig IB2
IK

K
fig: 3 ( c ) Two transistor Model
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 Two Transistor Analogy of SCR (contd..)

During the OFF state of a transistor,

The collector Current, IC = α I E + I CBO
where
α – is the common base current gain
I CBO - Common base leakage Current
For transistor – 1
IC1 = α1 I E + I CBO1

Similarly for transistor - 2

IC2 = α2 I E + I CBO2 8
 Two Transistor Analogy of SCR (contd..)

Total current I a - is sum of collector currents of

two transistors.

I a = Ic1 + Ic2

When gate is triggered , I K = Ia + Ig

( α1 I g + I CBO1 + I CBO2 )
Ik = -----------------------------------------------------
( 1- (α1 + α2 )
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 V-I Characteristics of SCR
Load

A
Vs

E G

K
ES

The Thyristor is connected as shown in circuit diagram

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 During Forward Bias
Forward Leakage A
Current
When Anode is made positive with
respect to Cathode and the switch is J1
P
in open position the Thyristor is said N
J2
to be forward bias P
G J3
N
Junction J1 , J 3 are forward bias
and J2 is in reverse bias
K

A small forward leakage current flows from Anode to

Cathode. At this position the Thyristor behaves like a
“ Forward Blocking or OFF- State Condition ”
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 During Forward Bias (contd…)

If the Anode to Cathode voltage is increased to

sufficiently large voltage , the junction J2 will breakdown.
This is known as “ Avalanche Breakdown ”

The voltage at which the junction- J2 gets break down is

called “ Forward Break Over Voltage ”

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During Reverse Bias
A

When Cathode is made positive

with respect to Anode and the P
switch is in open position the J1
N
Thyristor is said to be “ Reverse Bias ” S J2
G P
J3
N

Reverse Leakage current

K

Junctions J1 , J 3 are reverse bias and J2 is in forward bias

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 During Reverse Bias (contd..)
A small reverse leakage current flows from cathode to
anode of the order of few milliamperes or microamperes
will flow. This is known as “ Reverse Blocking or OFF- State
Condition ” of Thyristor.

If the reverse voltage is increased , then at a critical

voltage the Junctions J1 ,J 3 gets breakdown and the
current increases rapidly

Hence, a large magnitude of current flows through

the Thyristor and causes Thyristor gets damaged

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 V - I Characteristics of SCR
forward conduction
state ( on state )
Current Latching Current
Holding Current
Reverse leakage
Current Ig3 Ig2 Ig1 Ig =0

0
Forward Blocking
Reverse Blocking forward leakage Current
Voltage

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THANK YOU

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