DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D118

BYM56 series
Controlled avalanche rectifiers
Product specification 1996 May 24
Supersedes data of April 1992
Philips Semiconductors Product specification

Controlled avalanche rectifiers BYM56 series

FEATURES DESCRIPTION This package is hermetically sealed

,
and fatigue free as coefficients of
• Glass passivated Rugged glass package, using a high
expansion of all used parts are
• High maximum operating temperature alloyed construction.
matched.
temperature
• Low leakage current
• Excellent stability
2/3 page k(Datasheet) a
• Guaranteed avalanche energy
absorption capability
MAM104
• Available in ammo-pack
• Also available with preformed leads Fig.1 Simplified outline (SOD64) and symbol.
for easy insertion.

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
VRWM crest working reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
VR continuous reverse voltage
BYM56A − 200 V
BYM56B − 400 V
BYM56C − 600 V
BYM56D − 800 V
BYM56E − 1000 V
IF(AV) average forward current Ttp = 60 °C; − 3.5 A
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
Tamb = 65 °C; PCB mounting − 1.4 A
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
IFSM non-repetitive peak forward current t = 10 ms half sinewave; − 80 A
Tj = Tj max prior to surge;
VR = VRRMmax

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Philips Semiconductors Product specification

Controlled avalanche rectifiers BYM56 series

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ERSM non-repetitive peak reverse avalanche L = 120 mH; Tj = Tj max prior to − 20 mJ
energy surge; inductive load switched off
Tstg storage temperature −65 +175 °C
Tj junction temperature see Fig.5 −65 +175 °C

ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VF forward voltage IF = 3 A; Tj = Tj max; see Fig.6 − − 0.95 V
IF = 3 A; see Fig.6 − − 1.15 V
V(BR)R reverse avalanche IR = 0.1 mA
breakdown voltage
BYM56A 225 − − V
BYM56B 450 − − V
BYM56C 650 − − V
BYM56D 900 − − V
BYM56E 1100 − − V
IR reverse current VR = VRRMmax; see Fig.7 − − 1 µA
VR = VRRMmax; Tj = 165 °C; − − 150 µA
see Fig.7
trr reverse recovery time when switched from IF = 0.5 A to − 3 − µs
IR = 1 A; measured at IR = 0.25 A;
see Fig.10
Cd diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 − 90 − pF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W
Rth j-a thermal resistance from junction to ambient note 1 75 K/W

Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.

1996 May 24 3
Philips Semiconductors Product specification

Controlled avalanche rectifiers BYM56 series

GRAPHICAL DATA

MBG037 MBG058
5.0 2.0
handbook, halfpage handbook, halfpage
IF(AV) IF(AV)
(A) (A)
4.0 1.6

3.0 1.2

2.0 0.8

1.0 0.4

0 0
0 40 80 120 160 200 0 40 80 120 160 200
Ttp (oC) Tamb (oC)

a = 1.57; VR = VRRMmax; δ = 0.5. a = 1.57; VR = VRRMmax; δ = 0.5.

Lead length 10 mm. Device mounted as shown in Fig.9.

Fig.2 Maximum permissible average forward Fig.3 Maximum permissible average forward
current as a function of tie-point temperature current as a function of ambient temperature
(including losses due to reverse leakage). (including losses due to reverse leakage).

MGC746 MSA873
5 200
handbook, halfpage handbook, halfpage
P a=3 2.5 2 1.57
(W) Tj
1.42
4 (°C)

100
2

A B C D E
1

0
0 1 2 3 4 0
IF(AV) (A) 0 400 800 1200
VR (V)

a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.

Solid line = VR.

Fig.4 Maximum steady state power dissipation Dotted line = VRRM; δ = 0.5.
(forward plus leakage current losses,
excluding switching losses) as a function Fig.5 Maximum permissible junction temperature
of average forward current. as a function of reverse voltage.

1996 May 24 4
Philips Semiconductors Product specification

Controlled avalanche rectifiers BYM56 series

MBG046 MGC734
16 3
10halfpage
handbook, halfpage handbook,
IF
(A) IR
(µA)
12 2
10

max
8 10

4 1

0 10 −1
0 1 2 0 40 80 120 160 200
VF (V)
Tj (oC)

Solid line: Tj = 25 °C.

Dotted line: Tj = 175 °C. VR = VRRMmax.

Fig.6 Forward current as a function of forward Fig.7 Reverse current as a function of junction
voltage; maximum values. temperature; maximum values.

MBG027
10 2
handbook, halfpage
50
handbook, halfpage
25
Cd
(pF)

10 50

3
1
3
1 10 102 VR (V) 10
MGA200

f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values. Fig.9 Device mounted on a printed-circuit board.

1996 May 24 5
Philips Semiconductors Product specification

Controlled avalanche rectifiers BYM56 series

handbook, full pagewidth IF

DUT
(A)
+ 0.5
t rr
10 Ω 25 V

1Ω
50 Ω 0
t
0.25

0.5
IR
(A)
MAM057
1.0

Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.

Source impedance: 50 Ω; tr ≤ 15 ns.

Fig.10 Test circuit and reverse recovery time waveform and definition.

1996 May 24 6
Philips Semiconductors Product specification

Controlled avalanche rectifiers BYM56 series

,
PACKAGE OUTLINE

handbook, full pagewidth k a

1.35
max

4.5 MBC049
max 28 min 5.0 max 28 min

Dimensions in mm.

Fig.11 SOD64.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

1996 May 24 7