DESIGN OF DC-DC

CONVERTER FOR HYBRID

ELECTRIC CAR DRIVE

A PROJECT REPORT

Submitted by

D. MUTHU KUMAR (16106046)

M. SERALATHAN (16106065)
K. SIVA (16106067)
N. TAMIL VANAN (16106075)

in partial fulfillment for the award of the degree of

BACHELOR OF ENGINEERING
in
ELECTRICAL AND ELECTRONICS ENGINEERING

PAAVAI ENGINEERING COLLEGE, NAMAKKAL

(AUTONOMOUS)

APRIL 2020

i
 PAAVAI ENGINEERING COLLEGE, NAMAKKAL.
(AUTONOMOUS)

BONAFIDE CERTIFICATE

Certified that this project report titled “DESIGN OF DC-DC

CONVERTER FOR HYBRID ELECTRIC CAR DRIVE” is the bona

fide work D. MUTHU KUMAR (16106046), M.SERALATHAN

(16106065), K. SIVA (16106067), N.TAMIL VANAN (16106075) who

carried out the research under my supervision.

SIGNATURE SIGNATURE
Dr.G.BALAJI.,M.E.,Ph.D., Mr.D.BOOPATHI,M.E., (Ph.D).,
Professor Assistant professor
Head of the Department, Supervisor,
Department of EEE, Department of EEE,
Paavai engineering college, Paavai engineering college,
Namakkal- 637018. Namakkal- 637018.

Submitted for the University Examination held on __________________

INTERNAL EXAMINER EXTERNAL EXAMINER

ii
 DECLARATION

We D.MUTHU KUMAR (16106046), M.SERALATHAN

(16106065), K. SIVA (16106067), N.TAMIL VANAN (16106075)

hereby declare the project report titled “DESIGN OF DC-DC

CONVERTER FOR HYBRID ELECTRIC CAR DRIVE” done by

me under the guidance of Mr.D.Boopathi, M.E.,(Ph.D)., at Paavai

Engineering College is submitted in partial fulfilment of the requirement

for the award of Bachelor Of Engineering degree in Electric and

Electronic Engineering. Certified further that to the best of my

knowledge, the work reported here in does not form part of any other

project report or dissertation on the basis of which a degree or award was

conferred on earlier occasion on this or any other candidate.

DATE :

PLACE : SIGNATURE OF THE CANDIDATES

iii
 ACKNOWLEDGEMENT

A great deal of arduous work and effort has been put on in bringing out
this project work. Several subject experts have guided us and have contributed
significantly to this work and so this becomes obligatory to record our thanks
to them.

We express our profound gratitude to our honorable

Chairman, Shri. CA. N.V. NATARAJAN, B.Com., F.C.A., and also to our
Correspondent, Smt. MANGAI NATARAJAN, M.Sc., for providing all
necessary facilities for the successful completion of our project.

We wish to express our sincere thanks to our respected Director-

Administration, Dr. K.K. RAMASAMY, M.E., Ph.D., for all the blessings
and help provided during the period of project work.

We would like to thank our respected Principal, Dr. M.

PREMKUMAR, M.E., Ph.D., for allowing us to do this project and providing
required time to complete the same.

It is our first and foremost duty to express our deep and sincere thanks to
Controller of Examination, Dr. B. MURALI BABU., M.E., Ph.D., for
giving us the opportunity to do this project.

We wish to express the deep sense of gratitude to our Head of the

Department and supervised by Mr.D.Boopathi, M.E., (Ph.D)., for his able
guidance and useful suggestions, which helped us for completing project work.

We express our sincere thanks to our Project Coordinator,

Dr. A. RATHNAM, M.E., Ph.D., for their useful suggestions, which
helped us for completing the project work in time.

We would like to extend our sincere thanks to all our department staff
members and our parents for their advice and encouragement to do the
project work with full interest and enthusiasm.

iv
 ABSTRACT
Hybrid Electric Vehicle (HEV) is a recent developing technology
in automobile industry. Now a day most of the vehicles are using fossil
fuel like petrol, diesel while increasing the using of fossil fuel the
emission of CO2 and other toxic gas are pollutes the environment. And,
also the shortage of fossil fuels increases. To overcome the above
mention issue hybrid electric vehicles are introduced. The term hybrid is
combination of two or more sources together In this project Internal
Combustion (IC) engine and electric motor combine together for a
providing transmission power to the vehicles.

To operate the electric motor in vehicle,72V DC supply is required.

It is a plug-in type electric vehicle. So energy storage units such as
battery (type) used to provide electric power to motor The maximum
output of battery is 12V or 24V but the motor required 72V To balance
the voltage demand, a DC-DC boost converter is designed and implement
in the HEV.

v
 TABLE OF CONTENTS

CHAPTER TITLE PAGE

NO. NO.

ABSTRACT V

LIST OF TABLES Xi

LIST OF FIGURES iX

LIST OF ABBREVITATIONS Xii

1 INTRODUCTION 1

1.1 INTRODUCTION TO LITERATURE SURVEY 1

1.2 LITERATURE SURVEY 2

1.3 COMPARSION OF LITERATURE SURVEY 4

1.4 OBJECTIVE OF THE PROJECT 6

1.5 ORGANIZATION OF THE CHAPTER 6

2 COMPONENTS OF PROPOSED SYSYTEM 7

2.1 INTRODUCTION 7

2.2 MOSFET 7

2.2.1 Construction of MOSFET 8

2.2.2 Characteristics of MOSFET 8

2.2.3 Comparison of PMOSFET with BJT 10

vi
 2.2.4 comparison between BJT, MOSFET AND 10
IGBT

2.3 DIODE 11

2.3.1Depletion layer: 12

2.3.2 Basic structure of diodes: 13

2.3.3 Characteristics of diodes 13

2.3.4 Diode reverse characteristics 14

2.3.5 Type of power diode 16

3 EXISTING SYSTEM 18

3.1 INTRODUCTION 18

3.2 BLOCK DIAGRAM 18

3.3 SIMULINK MODEL 20

3.4 OUTPUT WAVEFORM OF EXISTING SYSTEM 22

4 PROPOSED SYSTEM 24

4.1 INTRODUCTION 24

4.2 BLOCK DIAGRAM 24

4.3 SIMULINK MODEL 25

5 MODELING OF PROPOSED SYSTEM 28

5.1 INTRODUCTON 28

5.2 PARAMETERS OF MATLAB COMPONENTS 28

vii
 5.2.1 Voltage source 28

5.2.2 Constant voltage 28

5.2.3 MOSFET 29

5.2.4 Diode 31

5.2.5 Voltage measurement 33

5.2.6 Inductor 34

5.2.7 Diode 35

5.2.8 Capacitor 36

5.2.9 Duty Cycle 37

6 RESULT 38

6.1 INPUT VOLTAGE 38

6.2 OUTPUT VOLTAGE 38

7 CONCLUSION 40

FUTURE WORK 41

APPENDICES 42

REFERENCE 43

viii
 LIST OF FIGURES
FIGURE
TITLE PAGE NO.
NO.

2.1 Symbol Of MOSFET 7

2.2 Construction Of MOSFET 8

2.3 Output Characteristics And Transfer Characteristics 9

Of MOSFET

2.4 Switching Characteristics Of MOSFET 10

2.5 Symbol Of Diode 12

2.6 Depletion Layer 13

2.7 V-I Characteristics Of Diode 15

2.8 Reverse Recovery Characteristics Of Diode 16

3.1 Block Diagram Of Existing System 18

3.2 Simulink Model Of Existing System 20

3.3 Input Voltage Of Existing System 22

3.4 Output Voltage Of Existing System 23

4.1 Block Diagram Of Proposed System 24

4.2 Simulink Model Of Proposed System 26

5.1 Constant Voltage 29

5.2 Parameters Of MOSFET 30

5.3 Parameters Of Diode 31

ix
5.4 Parameters Of Voltage Measurement 33

5.5 Parameters Of Inductance 35

5.6 Parameters Of Diode 36

5.7 Capacitance 36

6.1 Wave Form Of Input Voltage 38

6.2 Output Voltage 38

6.3 Waveform Of Subsystem And Constant 39

6.4 Waveform Of Relay 39

x
 LIST OF TABLE

TABLE PAGE
TITLE
NO. NO.

1.3 COMPARSION OF LITERATURE SURVEY 4

2.1 COMPARASION OF MOSFET, IGBT AND BJT 10

xi
 LIST OF ABBREVIATIONS

HEV - HYBRID ELECTRIC VEHICLE

ICE - INTERNAL COMBUSTION ENGINE

V - VOLTAGE

I - CURRENT

P - POWER

MAX - MAXIMUM

MIN - MINIMUM

DC - DIRECT CUURENT

AC - ALTERNATING CURRENT

BJT - BIPOLAR JUNCTION TRANSISTOR

MOSFET - METAL OXIDE SEMICONDUCTOR FIELD EFFFECT

TRANSISTOR

IGBT - INSULATED GATE BIPOLAR TRANSISTOR

G - GATE

S - SOURCE

D - DRAIN

xii
 CHAPTER 1
INTRODUCTION
In 21st century there has been increase in usage of fossil fuel and gas
leading to problems like global warming, climate change, shortage of fossil fuel
etc. Due to these research for making hybrid technology usable into daily life.
Our project discuss the technologies used in making hybrid car such as plug in
hybrid vehicle will take over the world in future and would become the
alternative for petrol and diesel cars. Hybrid electric vehicles (HEV) often look
just like conventional vehicles yet they provide greater fuel economy and fewer
emission because they combine an electric motor with a small internal
combustion engine. HEV are powered by two energy sources as energy
conversion unit such as combustion engine or fuel cell and energy stored
devices such as battery.

The main advantage of HEV is no mechanical link between the

combustion engine and the wheels. Lower emission of co2 and other better
mileage, at low speed in traffic no smog is emitted maintaining its sustainable
advantage reliable controlled noise pollution. Here we used plug-in electric
vehicle (PEV). These vehicles are recharged from an external electric source
such as wall sockets and the electric energy stored in rechargeable battery unit
drive. Electric motor which is coupled with the wheel. We used Li-ion battery, it
gives better performance compared

To older battery type. Here a boost converter designed and implemented

in HEV of converter is to boost the voltage as low to high. Electric motor drive
as required 72V, so we use this type of boost converter to increase the voltage
up to 12V-72V.

1.1 INTRODUCTION TO LITERATURE SURVEY

The various Nation and International journal papers and IEEE

(International electrical and electronics engineering) paper were taken and

1
analyzed by author name, type of converter used input voltage, output voltage,
number of input voltage used and they were tabulated.

1.2 LITERATURE SURVEY

A four level converter proposed with MOSFET switch for two source. Input
voltage for the proposed converter is 30V DC supply from battery and fuel cell
and output voltage of the converter is 240V. The proposed converter is
implemented is HEV(motor) (Veerendra et al, 2020) [4].

Boost converter is developed with IGBT switch and the motor is powered
by energy storage and fuel cells. Input voltage of the converter is 190V and
output is 400V. The proposed converter is implemented in HEV(IM) (Omar
hegazy et al, 2012) [5].

A boost converter which is designed by IGBT switch to supply power to

electric motor in HEV. Converter converts 150V supply from battery in to
260V. And, also super capacitor used for energy storage. (Traction motor)
(Jarushi et al,2010) [6].

Bi-directional DC-DC converter is providing supply to the motor which

used to drive HEV. The battery in the HEV is used to supply power to electric
motor. The proposed converter converts 5V supply into 28.8V for HEV (Sonya
gargies et al,2006) [7].

The solar energy source is used for supply electrical power to HEV, where
solar energy is stored in battery and a boost converter increases the voltage.
Boost converter consists of IGBT switch for converting purpose. Input voltage
for the proposed converter is 12V DC that improved to 24V. (Abisha baslin et
al, 2019) [8].

2
 A convertor deigned for improve the voltage level of the battery source and
hydro carbon fuel cell which is used in the hybrid electrical vehicle. The multi-
level voltage converter proposed with MOSFET switch. Input voltage of the
converter is 14V DC supply and it improves to 42VDC, also implemented in
HEV (Traction motor) (Faisal et al, 2007) [9].

There are two type of topology (independent and combinational) the

converter used for plug in HEV. The stores energy from batter used in AC—DC
converter with Thyrister switch to drive electric motor in HEV (Lisheng shi et
al, 2008) [10].

In the system developed a model of converter in MATLAB where the

energy source from battery and capacitor where interfaced and it is fed to multi-
input converter with BJT switch. Input voltage of the converter is 12V DC
supply from battery is increased in to 24V. (Mario marchesoni et al, 2019) [11]

The HEV is developed with two source, one is from IC engine and another
one is electric motor (PMSM) which is power from battery. A Buck-boost
converter designed with BJT switch where input is 60V DC supply and output is
80V. The proposed converter is implemented in HEV. (Northcott et al, 2009)
[12]

A vehicle has two sources which is solar panel at roof top and fuel cell.
Multi-level converter with BJT switch is designed and implemented. 5 V DC
supply bullied up into 50v by the proposed converter. (Rouzbeh reza ahrabi et
al, 2016) [13].

A model is tested in the power electronic circuit a Dual input DC-DC

converter and thyrister switch. Input voltage for the proposed converter is 36 V
DC supply and output voltage of the converter is 240 V. Proposed converter is
not implemented HEV (Motor) (Sivaprasad et al, 2015) [14].

3
 A prototype DC-DC Multi level boost converter proposed with MOSFET
and IGBT with two switch where used for this prototype in HEV. The input
voltage for the proposed converter is 50v DC supply that is increases into 300v.
( rosass-caro et al, 2008) [15] .

1.3 COMPARSION OF LITERATURE SURVEY

From the above table literature review comparison of
various topology switch etc. where reported in table 1.1
Table 1.1 : Literature review comparison

I/P O/P
S.N CONVET- NO. OF
AUTHOR SWITCH VOL VOL
O ERS INPUT
T T

A.S.VEEREND MULTI
LEVEL
1 -RA (2020) MOSFET 1 30 240
CONVERT
-ER
OMAR BOOST
HEGAZY (2012) CONVERT
2 IGBT 1 190 400
-ER

A. M. JARUSHI BOOST
AND CONVERT
3 N.SCHOFIELD -ER IGBT 1 150 260
(2010)

SONYA DC-DC
GARGIES(2006)
4 (FULL MOSFET 1 5 28.8
BRIDGE)

M.ABISHA BOOST 24
5 BASLIN(2019) CONVERT IGBT 2 12
-ER

4
 FAISALH. MULTI
KHAN1(2007) LEVEL
6 MOSFET 1 14 42
CONVERT
-ER
LISHENG SHI, AC—DC
THYRIST
7 ANDREW CONVERT 2 - -
ER
MEINTZ,(2008) -ER
MARIO MULTI-
MARCHESONI INPUT
8 BJT 2 12 22
CONVERT
(2019)
-ER
D. R. BUCK-
NORTHCOTT(2 BOOST
9 BJT 2 60 80
009) CONVERT
-ER
ROUZBEH BOOST
10 REZA CONVERT BJT 3 5 50
AHRABI(2016) -ER
SIVAPRASAD DUAL
A, JIJO JOSEPH, INPUT DC-
THYRIST
11 KUMARAVEL DC 2 36 240
ER
S, AND ASHOK CONVERT
S(2015) ER
J.C. ROSASS- DC-DC
CARO(2008) MULTI
MOSFET 1(UNI
LEVEL
AND DIRECTION 50 300
12 BOOST
IGBT AL)
CONVERT
ER

5
1.4 OBJECTIVE OF THE PROJECT
The main objective of our project is to design a DC-DC boost converter
to drive electric motor form the stored power in the battery that used in Hybrid
plug-in Electric Vehicles. Usage and shortage of fossil fuel increase, to
overcome that issue HEV are introduced. HEV is the combination of Internal
Combustion Engine(ICE) and electric motor. In converter MOSFET is used for
switching operation.

1.5 ORGANIZATION OF THE CHAPTERS

CHAPTER 2 COMPONENTS OF PROPOSED SYSTEM

The components used in the proposed system are explained and
model of the component with rating and how they work
CHAPTER 3 EXISTING SYSTEM
Here we take existing system has A.S. Veerendr 2020 he designed a
converter in mat lab and output wave form are obtained.
CHAPTER 4 PROPOSED SYSTEM
In proposed system we have designed a converter in MAT Lab and
output wave form where obtained.

CHAPTER 5 MATLAB MODEL OF CONVERTER

In mat lab there are certain parameters of every component in this

chapter they were explain. The theories formula is taken and evaluated.

CHAPTER 6 WAVEFORM OF SIMULATION

The output waveform of proposed system was taken using MAT Lab
they are simulated.

6
 CHAPTER-2
COMPONENTS OF PROPOSED SYSTEM

2.1 INTRODUCTION:
This chapter deals with various components of a converter and it
explains the construction, operation and characteristics of each component with
circuit diagram and block diagram.

2.2 MOSFET
A Metal Oxide Semi-Conductor Field Effect Transistor(MOSFET) is
developed by MOS technology and used in the area of field effect concept. A
MOSFET has three terminal Gate(G), Source(S) And Drain(D). where the
MOSFET is a voltage controlled device and its operation depends upon flow of
majority carrier only, MOSFET is a unipolar device. MOSFET are of two types
N-channel enhancement and P-channel enhancement. Out of this two types, N-
channel enhancement MOSFET is more common because of higher mobility of
electrons. A structure of N-channel MOSFET of low rating but in P-channel
MOSFET two heavily doped n+ region is diffused. An insulation layer of
Silicon Dioxide(Sio2) is grown in the surface. Symbol of MOSFET shown in
fig 2.1.

Figure 2.1 Symbol Of MOSFET

7
2.2.1 Construction of MOSFET:

It consists of a three terminal gate(G), source(S) and drain(D) and it has

two substrate N channel and P channel were silicon dioxide(Sio2) layer is
formed on the N-channel and P-channel.

The channel characteristics of power MOSFET where voltage and currents are
as indicated. The source terminal S is taken as common terminal, as usual,
between the input and output of a MOSFET. construction of MOSFET
shown in fig 2.2 [1]

Figure 2.2 Construction Of MOSFET

2.2.2 Characteristics of MOSFET

Transfer Characteristics:

This characteristic shows the variation of drain current ID as a function

of gate source voltage VGS. Threshold voltage VGST is an important parameter of
MOSFET.VGST is the minimum positive voltage between gate and source to
induce n-channel for threshold voltage below VGST device is in the off-state.
Magnitude of VGST is the order of 2 to 3V. The graph is drawn between the gate
source voltage and drain current. Where the rising current can see in the
figure2.3

Output Characteristics:

PMOSFET output characteristics, shown in fig indicate the variation of

drain current ID as a function of drain-source voltage V DS, with gate-source
voltages VGS as a parameter. When power MOSFET is driven with large gate-
8
source voltage, MOSFET is turned on, VDS. is small. Here, the MOSFET acting
as closed switch, is said to be driven in to ohmic region called saturation region.
output characteristics and transfer characteristics of MOSFET shown in
fig 2.3 [3].

Figure 2.3 Output characteristics and transfer characteristics of

MOSFET

Switching Characteristics:

The switching characteristics of a power MOSFET are influenced to a

large extent by internal capacitance of the device and the internal impedance of
the gate drive circuit. At turn-on, there is an initial delay tdn during which input
capacitance charges to gate threshold voltage VGST. Here tdn is called turn-on
delay time. switching characteristics of MOSFET shown in fig 2.4[3]

9
 Figure 2.4 Switching characteristics of MOSFET

2.2.3 Comparison of PMOSFET with BJT:

1. BJT is a bipolar device whereas PMOSFET ia a unipolar device.

2. A PMOSFET has a high input impedance (Mega ohm) whereas input
impedance of BJT is low (a few kilo-ohm).
3. PMOSFET is voltage controlled device whereas BJT is current controlled
device.
4. PMOSFETs in higher voltage ratings have more conduction loss.
5. The state of the art PMOSFETs are available with ratings upon
500V,140A whereas BJTs are available with ratings up to 1200V,800A.

2.2.4 COMPARISON BETWEEN BJT, MOSFET AND

IGBT
The comparison between BJT, MOSFET AND IGBT switching
characteristic are reported in table 2.1

10
 Table 2.1 : Comparison of switches

S.NO PARAMETERS BJT MOSFET IGBT

Majority
Bipolar
1 Carriers type Bipolar device carrier
device
device
Current Voltage Voltage
2 Gate or base drive
controlled Controlled Controlled

Temperature
3 coefficient of ON- Negative Positive Positive
state resistance

Inverters, Choppers,
low power Inverters,
Choppers,
UPS, SMPS,
4 Applications UPS, SMPS, UPS, SMPS,
induction brushless DC AC motor
drives.
motor drives. motor drives.

5 Switching Power loss High Low Low

6 Input impedance High Low Low

On state voltage drop

7 Low High Low
and Conduction loss

8 Parallel operation Not possible Possible Possible

Voltage and Current 1200 V and 500 V and 1200 V and

9
Rating 800 A 140 A 500 A

Switching Frequency
10 (10 – 20) kHz upto 1 MHz upto 50 kHz
Rating

2.3 DIODE
A p-n junction forms the basic building block of all power semiconductor
devices. A p-n junction is formed when p-type semiconductor is brought in

11
metallurgical, or physical, contact with n-type semiconductor. In p-region, free
holes are called majority carriers and free electrons minority carriers. In n-
region, free electrons are called majority carriers whereas free holes are called
minority carriers.

a) If doping density in p-region semiconductor doping density in n-type

semiconductor, then it is called p-n junction.

b) If doping density in p-junction is much greater than that in n-region, it is

called p+ n junction.

c) If doping in n-type is less than that given in part(b), the junction is called
p+ n- junction.

If both p and n-layers are heavily doped, it is called p+ n+ junction and if very
lightly doped, a p- n- junction is formed. In general, p+ indicates highly doped p
region, n- lightly doped n region and so on. symbol of diode shown in fig 2.5

Figure 2.5 Symbol of diode

2.3.1 DEPLETION LAYER:

Diffusion of each electron from n to p, leaves a positive charge behind in
the junction. These charges establish an electric field across the junction. When

12
this field grows strong enough, it stops further diffusion. Some electrons, as
these diffuse from n to p combine with holes in p-region and disappear. Similar
recombination occurs in n-region. When electric field stops further diffusion,
charge carriers (holes and electrons) don’t move. The region extending into both
p and n semiconductor layers is called depletion region or space-charge region.
The width of depletion region, or depletion layer, is the order of 5*10-4 mm.

When positive terminal of a battery is connected to p-type material and

negative terminal to n-type material, the p-n junction is forward biased. Positive
terminal of the battery sucks electrons from p material leaving from holes there
and it travels through p material towards the negative charge at p-n junction and
thus neutralize party this negative charge. These electrons move through n
material, reach the p-n junction thereby neutralizing party the positive charge.
As a result, width of depletion region gets reduced. A rise in junction
temperature also decrease width of depletion layers. As the barrier potential
depends on width of the depletion layer, the barrier potential decrease with rise
in junction temperature. Fig 2.6 shows model of depletion layer [3].

Figure 2.6 Depletion layer

2.3.2 BASIC STRUCTURE OF DIODES:

It consists of heavily doped n+ substrate. On this substrate, a lightly
doped n- layer is epitaxial grown. Now a heavily doped p+ layer is diffused in to

13
n- to form the anode of power diode. The function of n- layer is to absorb the
depletion layer of the reverse biased p +n- junction j1. The break-down voltage
needed in a power diode governs the thickness of n- layer ; greater the
breakdown voltage, more the n- layer thickness. the modification in the context
of diode, presented about, makes them appropriate for high power application.
As diode, or p-n junction , is the basic building block of all other power semi
conductor devices same basic modification should be implemented in all low
power semiconductor device in order to raise their power handling capabilities.

2.3.3 Characteristics of diodes

The diode has two terminals called anode and cathode and has two
characteristics, VI characteristics and reverse recovery characteristics

V-I characteristics

When anode is positive with respect to cathode, diode is said to be

forward biased with increase of source voltage vs from zero value, initial value
diode current is zero. From vs=0 to cut in voltage . beyond cut in voltage, the
diode current rises rapidly and the diode is said to conduct for silicon diode the
cut in voltage is around 0.7 v. when diode conducts there is a forward voltage
drop of the order of 0.8 to 1v

When cathode is positive with respect to anode the diode is said to be reverse
biased in the reverse biased condition , a small reverse current called leakage
current, of the order of microamperes . the leakage current is almost
independent of the magnitude of reverse voltage until this voltage reaches break
over voltage . a large reverse breakdown voltage associated with high reverse
current lead to excessive power loss that may destroy the diode, diode man
fraction also indicate the value of peak inverse voltage of a diode. This is the
largest reverse voltage to which a diode may be subjected during its working.
The diode is now available with forward current rating of 1A to serval thousand
amperes with reverse voltage rating of 50v to 5000v. V-I characteristics of
diode shown in figure 2.7.[2]

14
 Figure 2.7 V-I Characteristics of diode

2.3.4 Diode reverse recovery characteristics

The forward diode current decays to zero, the diode continues to conduct
in the reverse direction because of the pressure of stored charges in the
depletion region and the semiconductor layers. The reverse current flows for a
time called reverse recovery time trr. The reverse recovery time is composed of
two segments of time ta and tb i.e. trr=ta+tb. Time ta is the time between zero
crossing of forward current and peak reverse current irm. during the time ta,
charge stored in depletion layer is removed. during tb, charge from the
semiconductor layers is removed. which must be removed during the reverse
recovery time trr. the ratio tb/ta is called the softness factor or s-factor. Its usual
value is unity and this indicates low oscillatory over voltages. A diode with S-
factor equal to one is called soft-recovery diode and a diode with s-factor less
than one is called snappy-recovery diode or fast recovery diode. The average
value of vf if gives the total power loss in a diode. reverse recovery
characteristics of diode shown in figure 2.8 [3].

15
 Figure 2.8 Reverse recovery characteristics of diode

2.3.5 Type of power diode

General purpose diode

These diode have relatively high reverse recovery time of the order of of
about 25us. Their current rating vary from 1A to several thousand ampere and
the range of voltage rating is from 50v to about 5KV. Application of power
diode of this type include battery charging electric traction, electroplating and
welding.

Fast recovery diode

The diode with low reverse recovery time of about 15US are classified as
fast recovery diode these are used in chopper, communication circuit switched
mode power supplies their current rating vary from about 1A to several
thousand amperes and voltage rating from 50V to about 3KV. For voltage rating

16
above 400V the epitaxial process is used for diode fabrication of diode. But this
doping may increase the forward voltage drop in a diode.

Schottky diode

This class of diode use mental to semiconductor junction for rectification

purpose instead of p-n junction. the metal is usually aluminium and
semiconductor is silicon. A schotty diode has aluminium-silicon junction the
silicon is n-type. The schottky diode is by the movement of majority carriers
only and the turn-off delay caused by recombination is avoided. As such schotty
diode can switch off much faster than p-n junction diode.

17
 CHAPTER 3

EXISTING SYSTEM

3.1 INTRODUCTION
The existing system consist of A four level converter proposed with
MOSFET switch for two source. Input voltage for the proposed converter is
30V DC supply from battery and fuel cell and output voltage of the converter is
240V. The proposed converter is implemented is HEV.

3.2 BLOCK DIAGRAM

Existing model block diagram shown in figure 3.1

Figure 3.1 Block diagram of existing system

18
Fuel tank

The fuel tank is used to store the flammable fluids the system must
contain a quantity of fuel and must avoid leakage and limit evaporation
emissions. It must be filled in a secure way without sparks.

Engine

An engine is a machine designed to convert one energy into mechanical

energy like internal combustion engine burn a fuel to create heat which is then
used to do work.

Traction motor

Traction motor is an electric motor used for propulsion of vehicle such as

locomotives or electric roadway vehicle.

Motor controller

A motor controller is a device or group of device that serves to govern in

some predetermined manner the performance of an electric motor. a motor
controller might include a manual or automatic means for starting and stopping
the motor. Selecting and regulating the speed limiting the torque and protecting
against the over loads and electric faults.

Battery

An battery is a rechargeable battery that supplies electric current to a

motor vehicle its main purpose is to run the motor without any disturbance.

Battery charger

A battery charger or a recharger is a device used to put energy into a

secondary cell or rechargeable battery by forcing an electric current through it.

Mechanical coupling

Coupling are mechanical components used to connect two in line shafts.

A coupling can be rigid or flexible allowing various amount of angular, radial
and axial misalignment between the two shafts.

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Mechanical transmission

A transmission is a machine in a power transmission system, which

provide controlled application of the power. In motor vehicles where the
transmission adapts the output of the internal combustion engine to the drive
wheels such engine need to operate at a relatively high rational speed.

Final drive

While driving the car we can operate in two differential source by

electrical source (fuel cell) and mechanical by using internal combustion engine.

3.3 SIMULINK MODEL

The detailed Simulink model of existing system given in figure 3.2

Figure 3.2 simulink model of existing system

Fuel cell

A fuel cell is an electro chemical cell that convert the chemical energy of
A fuel and an oxidizing agent into electricity through a pair of redox reactions.

Voltage measurement

20
 Voltage is the difference of electric potential between two points of an
electric or electronics circuit expressed in volts. It measures the potential energy
of an electric field to cause an electric current in a an electric conductor.

MOSFET

The metal oxide semiconductor field effect transistor act as a switch turn on
when gate pulse

Diode

A Diode is a two terminal electronic component that only conducts

current in one direction an ideal diode will have zero resistance in one direction
and infinite resistance in reverse direction.

Inductance

It is the tendency of an electrical conductor to oppose a charge in

electrical current flow through it. The flow of electric current through a
conductor create a magnetic field around the conductor whose strength is
depend on the magnitude of the current.

Capacitance

A capacitor is a device that stores electrical energy in an electric field and

it is a passive electrical component with two terminal effect of capacitance is
known as capacitance.

Relational operation

The relational operation are < , > , <= , => , == , ~= .relational operation
perform element-by element comparisons between two arrays they return a
logical arrays of the same size, with element set to true (1) where the relation is
true and elements set to false (0) where it is not.

Repeating sequence

A repeating sequence block a periodic scalar signal having a waveform

that you specify. You can specify any waveform, using the block dialog’s time

21
value and output parameters. The time value parameter specifies a vector of
sample times.

Integrator

The integrator block output the value of the integral of its input signal
with respect to time. integrator block as a dynamic system with one state
Gain.The gain block multiplies the input by a constant value gain. The input and
the gain can each be a scalar, vector or matrix. The multiplication parameter let
you specify element wise or matrix multiplication.

3.4 OUTPUT WAVEFORM OF EXISTING SYSTEM

The PI controller closed loop operation is applied for the conventional
boost converter to increase the voltage gain of fuel cells. The input and output
voltages of the closed-loop boost converter input voltage of existing system
shown in fig 3.3 and output voltage of existing system shown in fig 3.4

Figure 3.3 Input voltage of existing system

22
Figure 3.4 Output voltage of existing system

23
 CHAPTER 4

PROPOSED SYSTEM

4.1 INTRODUCTION
The Proposed system consist of A Boost converter proposed with
MOSFET switch. Input voltage for the proposed converter is 24V DC supply
from battery and output voltage of the converter is 72V. The proposed converter
is implemented is HEV.

4. 2 BLOCK DIAGRAM
In Proposed model block diagram shown in figure 4.1

Figure 4.1 Block diagram of proposed system

BLOCK DIAGRAM EXPLANATION:

IC ENGINE:
An Internal Combustion Engine (ICE) is a heat engine in which the combustion
of a fuel occurs with an oxidizer (usually air) in a combustion chamber that is
an integral part of the working fluid flow circuit.

24
CONVERTER:
A boost converter (step-up converter) is a DC-to-DC power converter that
steps up voltage (while stepping down current) from its input (supply) to its
output (load). It is a class of Switched-Mode Power Supply (SMPS) containing
at least two semiconductors (a diode and a transistor) and at least one energy
storage element: a capacitor, inductor, or the two in combination.

BATTERY:
A Lithium-ion battery or Li-ion battery (abbreviated as LIB) is a type
of rechargeable battery. Lithium-ion batteries are commonly used for portable
electronics and electric vehicles and are growing in popularity for military
and aerospace applications. Here we used to store the energy to utilize that
energy to the source of motor.

ELECTRIC MOTOR:
A brushless DC electric motor (BLDC motor or BL motor), also known
as electronically commutated motor (ECM or EC motor) and a brushless
motor over brushed motors are high power-to-weight ratio, high speed,
electronic control, and low maintenance.

MECHANICAL COUPLING:
A gear coupling is a mechanical device for transmitting torque between two
shafts that are not collinear. The limit on torque density in universal joints is due
to the limited cross sections of the cross and yoke. Here we couple the motor in
a rear axle to drive a vehicle as a back wheel drive.

4.3 Simulink MODEL

The detail Simulink model of proposed system given in figure 4.2

25
 Figure 4.2 Simulink model of proposed system

Voltage measurement

Voltage is the difference of electric potential between two points of an

electric or electronics circuit expressed in volts. It measures the potential energy
of an electric field to cause an electric current in a an electric conductor.

MOSFET

The metal oxide semiconductor field effect transistor act as a switch turn on
when gate pulse

Diode

A Diode is a two terminal electronic component that only conducts

current in one direction an ideal diode will have zero resistance in one direction
and infinite resistance in reverse direction.

Inductance

It is the tendency of an electrical conductor to oppose a charge in

electrical current flow through it. The flow of electric current through a

26
conductor create a magnetic field around the conductor whose strength is
depend on the magnitude of the current.

Capacitance

A capacitor is a device that stores electrical energy in an electric field and

it is a passive electrical component with two terminal effect of capacitance is
known as capacitance.

27
 CHAPTER 5

MODELING OF PROPOSED SYSTEM

5.1 INTRODUCTON
The parameters in MAT lab have to share content data with Simulink
model and the dat that a chart stores internally in its own workspace. Detect
add undefined data, event, and messages. It also have some default value and
we can define the value of each component.

5.2 PARAMETERS OF MATLAB COMPONENTS

5.2.1 Voltage source
The DC Voltage Source block represents an ideal voltage source that is
powerful enough to maintain specified voltage at its output regardless of the
current flowing through the source. You specify the output voltage by using
the Constant voltage parameter, which can be positive or negative The DC
Voltage Source block represents an ideal voltage source that is powerful enough
to maintain specified voltage at its output regardless of the current flowing
through the source. You specify the output voltage by using the Constant
voltage parameter, which can be positive or negative.Connections + and – are
conserving electrical ports corresponding to the positive and negative terminals
of the voltage source, respectively. The current is positive if it flows from
positive to negative, and the voltage across the source is equal to the difference
between the voltage at the positive and the negative terminal, V(+) – V(–).

5.2.2 Constant voltage

The Output voltage. You can specify positive or negative values. The
default value is 1 V. the constant voltage shown in fig 5.1

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 Figure 5.1 Constant voltage

5.2.3 MOSFET
DESCRIPTION
The MOSFET device turns on when a positive signal is applied at the
gate input (g > 0) whether the drain-source voltage is positive or negative. If no
signal is applied at the gate input (g=0), only the internal diode conducts when
voltage exceeds its forward voltage Vf. With a positive or negative current
flowing through the device, the MOSFET turns off when the gate input becomes
0. If the current I is negative and flowing in the internal diode (no gate signal or
g = 0), the switch turns off when the current I becomes 0. The on state voltage
Vds varies: Vds = Ron*I when a positive signal is applied at the gate input. Vds =
Rd*I-Vf +Lon*dI/dt when the antiparallel diode is conducting (no gate signal).
The Lon diode inductance is available only with the continuous model. For most
applications, Lon should be set to zero for both continuous and discrete models.
The MOSFET block also contains a series Rs-Cs snubber circuit that can be
connected in parallel with the MOSFET (between nodes d and s).

PARAMETERS

FET Resistance Ron

The internal resistance Ron, in ohms (Ω). Default is 0.1. The Resistance
Ron parameter cannot be set to 0 when the Inductance Lon parameter is set to 0.

Internal diode inductance Lon

29
 The internal inductance Lon, in henries (H). Default is 0. The Inductance
Lon parameter is normally set to 0 except when the Resistance Ron parameter is
set to 0. parameters of MOSFET shown in fig 5.2

Figure 5.2 Parameters Of MOSFET

Internal diode resistance Rd

The internal resistance of the internal diode, in ohms (Ω). Default is 0.01.

Internal diode forward voltage Vf

The forward voltage of the internal diode, in volts (V). Default is 0.

Initial current Ic

You can specify an initial current flowing in the MOSFET device. It is

usually set to 0 in order to start the simulation with the device blocked. Default
is 0. If the Initial current IC parameter is set to a value greater than 0, the
steady-state calculation considers the initial status of the MOSFET as closed.
Initializing all states of a power electronic converter is a complex task.
Therefore, this option is useful only with simple circuits.

Snubber resistance Rs

30
 The snubber resistance, in ohms (Ω). Default is 1e5. Set the Snubber
resistance Rs parameter to inf to eliminate the snubber from the model.

Snubber capacitance Cs

The snubber capacitance, in farads (F). Default is inf . Set the Snubber
capacitance Cs parameter to 0 to eliminate the snubber, or to inf to get a
resistive snubber.

Show measurement port

If selected, add a Simulink® output to the block returning the MOSFET

current and voltage. Default is selected.

5.2.4 DIODE

Figure 5.3 Parameters of diode

DESCRIPTION
The diode is a semiconductor device that is controlled by its own voltage
Vak and current Iak. When a diode is forward biased (Vak > 0), it starts to
conduct with a small forward voltage Vf across it. It turns off when the current

31
flow into the device becomes 0. When the diode is reverse biased (Vak < 0), it
stays in the off state. parameters of diode shown in fig 5.3

PARAMETERS

Resistance Ron

The diode internal resistance Ron, in ohms (Ω). Default is 0.001.

The Resistance Ron parameter cannot be set to 0 when the Inductance
Lon parameter is set to 0.

Inductance Lon

The diode internal inductance Lon, in henries (H). Default is 0.

The Inductance Lon parameter cannot be set to 0 when the Resistance
Ron parameter is set to 0.

Forward voltage Vf

The forward voltage of the diode device, in volts (V). Default is 0.8.

Initial current Ic

Specifies an initial current flowing in the diode device. Default is 0. It is

usually set to 0 to start the simulation with the diode device blocked. If
the Initial Current IC parameter is set to a value greater than 0, the steady-state
calculation considers the initial status of the diode as closed. Initializing all
states of a power electronic converter is a complex task. Therefore, this option is
useful only with simple circuits.

Snubber resistance Rs

The snubber resistance, in ohms (Ω). Default is 500. Set the Snubber
resistance Rs parameter to inf to eliminate the snubber from the model.

Snubber capacitance Cs

The snubber capacitance in farads (F). Default is 250e-9. Set the Snubber
capacitance Cs parameter to 0 to eliminate the snubber, or to inf to get a
resistive snubber.

32
Show measurement port
If selected, adds a Simulink® output to the block returning the diode
current and voltage. Default is selected.

5.2.5 VOLTAGE MEASUREMENT

Figure 5.4 Parameters of voltage measurement

DESCRIPTION

The Voltage Measurement block measures the instantaneous voltage

between two electric nodes. The output provides a Simulink® signal that can be
used by other Simulink blocks. The parameters of voltage measurement shown
in fig 5.4

PARAMETER

Output signal

Specifies the format of the output signal when the block is used in a
phasor simulation. The Output signal parameter is disabled when the block is
not used in a phasor simulation. The phasor simulation is activated by a
Powergui block placed in the model. Set to Complex (default) to output the
measured current as a complex value. The output is a complex signal. Set
to Real-Imag to output the real and imaginary parts of the measured current. The
output is a vector of two elements. Set to Magnitude-Angle to output the
magnitude and angle of the measured current. The output is a vector of two

33
elements. Set to Magnitude to output the magnitude of the measured current.
The output is a scalar value.

5.2.6 INDUCTOR
Often data sheets give a range of recommended inductor values. it is
recommended to choose an inductor from this range. The higher the inductor value, the
higher is the maximum output current because of the reduced ripple current. The lower
the inductor value, the smaller is the solution size. Note that the inductor must always
have a higher current rating than the maximum current because the current increases
with decreasing inductance. For parts where no inductor range is given, the following
equation is a good estimation for the right inductor parameters of inductance in fig 5.5

L= vin x (vout- vin)/ ΔIL x fs x vout

VIN = Typical input voltage

VOUT = Desired output voltage

fS = Minimum switching frequency of the converter

ΔIL = Estimated inductor ripple current

ΔIL =(0.2 to 0.4) x Iout(max) x vout/vin

ΔIL = Estimated inductor ripple current

IOUT(max) = Maximum output current necessary in the application

34
 Figure 5.5 Parameters of inductance

5.2.7 Diode
To reduce losses, Schottky diodes should be used. The forward current rating
needed is equal to the maximum output current parameters of diode shown in fig 5.6

IF= IOUT(MAX)

IF = Average forward current of the rectifier diode

IOUT(max) = Maximum output current necessary in the application

Schottky diodes have a much higher peak current rating than average rating.
Therefore the higher peak current in the system is not a problem. The other parameter
that has to be checked is the power dissipation of the diode.

PD = IF x V F

IF = Average forward current of the rectifier diode

VF = Forward voltage of the rectifier diode

35
 Figure 5.6 The Parameters of diode

5.2.8 Capacitor
The capacitor for various voltages the parameter of capacitance shown in fig 5.7

Cout(min) = iout(max) x D/ fs x Δvout

COUT(min) = Minimum output capacitance
IOUT(max) = Maximum output current of the application
fS = Minimum switching frequency of the converter
ΔVOUT = Desired output voltage ripple

Figure 5.7 The parameter of capacitance

36
5.2.9 Duty Cycle
D=1- VIN(min) x η / vout
VIN(min) = Minimum input voltage
VOUT = Desired output voltage
η = Efficiency of the converter

37
 CHAPTER 6
RESULT
INPUT VOLTAGE
This is the waveform input voltage 12v and relay pulse and subsystem
waveform

Figure 6.1 Waveform of input voltage

OUTPUT VOLTAGE
We get a constant output voltage of 61V with subsystem and relay
waveform

Figure 6.2 Waveform of output voltage

38
Figure 6.3 Waveform of subsystem and constant

Figure 6.4 Wave form of relay

39
 CHAPTER 7

CONCLUSION
This project explained in detail about the converter which is used to
increase the voltage In the existing system we designed a converter which can
be raise the input voltage from 30 to 72 V and this is designed for other purpose.
In proposed we designed a converter for a hybrid electric car drive plug in type
we use many 12 Volt battery connected to increase the voltage but in our
proposed system we designed a converter where we use single battery and we
raise the voltage from 12 to 72V And we used a closed loop system to maintain
constant voltage this was simulated in MATLab and output wave form obtained
our expected output voltage is 72V and we have gained 71 V . by using various
technics we can increase the voltage and by various gate pulses. A DC-DC
converter designed by using MATLAB and developed as a hardware model for
HEV. The converter consist of a MOSFET switches and filter excepted output
at the converter is 72v but in pratical 71V obtained. Source to the converter is
battery in the HEV that is 12V.

40
 FUTURE WORK

 In future, renewable energy resources(solar, fuel cell etc) can be apply as

input to the converter.
 Further more, the solar panel is place in roof of the car. By placing PV in
the HEV , usage and maintenance of energy storage unit ( battery ) is
reduced.

 By using renewable resources HEV improves performance in both

economically and environmentally

PUBLICATION DETAILS

D.Boopathi, D.Muthukumar, M.Seralathan, K.Siva, N.Tamilvanan

―DESIGN OF DC-DC CONVERTER FOR HYBRID ELECTRIC CAR
DRIVE‖ Yet to be published in ―International Research Journal of
engineering and technology (IRJET) at september 2020 . ISSN 2395-0056
PAPER ID FTP79F0810

41
APPENDICES

42
 REFERENCE

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11. Marchesoni, M., Passalacqua, M. and Vaccaro, L., 2020. A Refined Loss
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