MCP1702

250 mA Low Quiescent Current LDO Regulator

Features: Description:
• 2.0 µA Quiescent Current (typical) The MCP1702 is a family of CMOS low dropout (LDO)
• Input Operating Voltage Range: 2.7V to 13.2V voltage regulators that can deliver up to 250 mA of
• 250 mA Output Current for Output Voltages  2.5V current while consuming only 2.0 µA of quiescent
current (typical). The input operating range is specified
• 200 mA Output Current for Output Voltages < 2.5V
from 2.7V to 13.2V, making it an ideal choice for two to
• Low Dropout (LDO) Voltage six primary cell battery-powered applications, 9V
- 625 mV typical @ 250 mA (VOUT = 2.8V) alkaline and one or two cell Li-Ion-powered
• 0.4% Typical Output Voltage Tolerance applications.
• Standard Output Voltage Options: The MCP1702 is capable of delivering 250 mA with
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, only 625 mV (typical) of input to output voltage
3.0V, 3.3V, 4.0V, 5.0V differential (VOUT = 2.8V). The output voltage tolerance
• Output Voltage Range 1.2V to 5.5V in 0.1V of the MCP1702 is typically ±0.4% at +25°C and ±3%
Increments (50 mV increments available upon maximum over the operating junction temperature
request) range of -40°C to +125°C. Line regulation is ±0.1%
typical at +25°C.
• Stable with 1.0 µF to 22 µF Output Capacitor
• Short-Circuit Protection Output voltages available for the MCP1702 range from
1.2V to 5.0V. The LDO output is stable when using only
• Overtemperature Protection
1 µF of output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
Applications: input and output. Overcurrent limit and
• Battery-powered Devices overtemperature shutdown provide a robust solution
for any application.
• Battery-powered Alarm Circuits
• Smoke Detectors Package options include the SOT-23A, SOT-89-3, and
TO-92.
• CO2 Detectors
• Pagers and Cellular Phones
Package Types
• Smart Battery Packs
• Low Quiescent Current Voltage Reference 3-Pin SOT-23A 3-Pin SOT-89
• PDAs VIN VIN
• Digital Cameras 3
• Microcontroller Power
MCP1702
• Solar-Powered Instruments MCP1702
• Consumer Products 1 2 1 2 3
• Battery Powered Data Loggers GND VIN VOUT
GND VOUT

Related Literature: 3-Pin TO-92

• AN765, “Using Microchip’s Micropower LDOs”,
1 23
DS00765, Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
Bipolar LDOs”, DS00766, Bottom
Microchip Technology Inc., 2002 View
• AN792, “A Method to Determine How Much
Power a SOT-23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001 GND VIN VOUT

 2010 Microchip Technology Inc. DS22008E-page 1

MCP1702
Functional Block Diagrams

MCP1702

VIN VOUT

Error Amplifier
+VIN
Voltage
-
Reference
+

Overcurrent
Overtemperature

GND

Typical Application Circuits

MCP1702
VOUT
3.3V
VOUT
VIN IOUT
VIN COUT 50 mA
9V + 1 µF Ceramic
CIN GND
Battery 1 µF Ceramic

DS22008E-page 2  2010 Microchip Technology Inc.

 MCP1702
1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
CHARACTERISTICS a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings † operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
VDD...............................................................................+14.5V may affect device reliability.
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................... 150°C
ESD protection on all pins (HBM;MM) 4 kV;  400V

DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ of -40°C to +125°C. (Note 7)
Parameters Sym Min Typ Max Units Conditions
Input / Output Characteristics
Input Operating Voltage VIN 2.7 — 13.2 V Note 1
Input Quiescent Current Iq — 2.0 5 µA IL = 0 mA
Maximum Output Current IOUT_mA 250 — — mA For VR  2.5V
50 100 — mA For VR < 2.5V, VIN  2.7V
100 130 — mA For VR < 2.5V, VIN  2.95V
150 200 — mA For VR < 2.5V, VIN  3.2V
200 250 — mA For VR < 2.5V, VIN  3.45V
Output Short Circuit Current IOUT_SC — 400 — mA VIN = VIN(MIN) (Note 1), VOUT = GND,
Current (average current) measured
10 ms after short is applied.
Output Voltage Regulation VOUT VR-3.0% VR±0.4% VR+3.0% V Note 2
VR-2.0% VR±0.4% VR+2.0% V
VR-1.0% VR±0.4% VR+1.0% V 1% Custom
VOUT Temperature TCVOUT — 50 — ppm/°C Note 3
Coefficient
Line Regulation VOUT/ -0.3 ±0.1 +0.3 %/V (VOUT(MAX) + VDROPOUT(MAX))
(VOUTXVIN)  VIN  13.2V, (Note 1)
Load Regulation VOUT/VOUT -2.5 ±1.0 +2.5 % IL = 1.0 mA to 250 mA for VR  2.5V
IL = 1.0 mA to 200 mA for VR  2.5V,
VIN = 3.45V (Note 4)
Note 1: The minimum VIN must meet two conditions: VIN2.7V and VIN VOUT(MAX) + VDROPOUT(MAX).
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The
input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or VIN = 2.7V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.

 2010 Microchip Technology Inc. DS22008E-page 3

MCP1702
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ of -40°C to +125°C. (Note 7)
Parameters Sym Min Typ Max Units Conditions
Dropout Voltage VDROPOUT — 330 650 mV IL = 250 mA, VR = 5.0V
(Note 1, Note 5) — 525 725 mV IL = 250 mA, 3.3V  VR < 5.0V
— 625 975 mV IL = 250 mA, 2.8V  VR < 3.3V
— 750 1100 mV IL = 250 mA, 2.5V  VR < 2.8V
— — — mV VR < 2.5V, See Maximum Output
Current Parameter
Output Delay Time TDELAY — 1000 — µs VIN = 0V to 6V, VOUT = 90% VR
RL = 50 resistive
Output Noise eN — 8 — µV/(Hz)1/2 IL = 50 mA, f = 1 kHz, COUT = 1 µF
Power Supply Ripple PSRR — 44 — dB f = 100 Hz, COUT = 1 µF, IL = 50 mA,
Rejection Ratio VINAC = 100 mV pk-pk, CIN = 0 µF,
VR = 1.2V
Thermal Shutdown TSD — 150 — °C
Protection
Note 1: The minimum VIN must meet two conditions: VIN2.7V and VIN VOUT(MAX) + VDROPOUT(MAX).
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V. The
input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or VIN = 2.7V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.

DS22008E-page 4  2010 Microchip Technology Inc.

 MCP1702
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range TJ -40 +125 °C Steady State
Maximum Junction Temperature TJ — +150 °C Transient
Storage Temperature Range TA -65 +150 °C
Thermal Package Resistance (Note 2)
Thermal Resistance, 3L-SOT-23A EIA/JEDEC JESD51-7
JA — 336 — °C/W
FR-4 0.063 4-Layer Board
JC — 110 — °C/W
Thermal Resistance, 3L-SOT-89 EIA/JEDEC JESD51-7
JA — 153.3 — °C/W
FR-4 0.063 4-Layer Board
JC — 100 — °C/W
Thermal Resistance, 3L-TO-92 JA — 131.9 — °C/W
JC — 66.3 — °C/W
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.

 2010 Microchip Technology Inc. DS22008E-page 5

MCP1702
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

5.00 120.00
VOUT = 1.2V Temperature = +25°C
Quiescent Current (µA)

4.00 100.00

GND Current (µA)

+130°C
VOUT = 1.2V
0°C 80.00
3.00 +90°C VIN = 2.7V
+25°C
60.00
2.00
40.00
1.00 -45°C 20.00

0.00 0.00
2 4 6 8 10 12 14 0 40 80 120 160 200
Input Voltage (V) Load Current (mA)

FIGURE 2-1: Quiescent Current vs. Input FIGURE 2-4: Ground Current vs. Load
Voltage. Current.

5.00 120.00
VOUT = 2.8V Temperature = +25°C
Quiescent Current (µA)

4.00 100.00
VOUT = 5.0V
GND Current (µA)

+130°C
VIN = 6.0V
80.00
3.00 +90°C
+25°C
60.00
2.00
0°C 40.00 VOUT = 2.8V
VIN = 3.8V
1.00 -45°C 20.00

0.00 0.00
3 5 7 9 11 13 0 50 100 150 200 250
Input Voltage (V) Load Current (mA)

FIGURE 2-2: Quiescent Current vs.Input FIGURE 2-5: Ground Current vs. Load
Voltage. Current.

5.00 3.00
VOUT = 5.0V VOUT = 2.8V IOUT = 0 mA
VOUT = 5.0V
Quiescent Current (µA)
Quiescent Current (µA)

2.50 VIN = 3.8V VIN = 6.0V

4.00 +130°C
2.00

3.00 1.50
VOUT = 1.2V
+90°C VIN = 2.7V
1.00
2.00 0°C
+25°C
0.50
-45°C
1.00 0.00
6 7 8 9 10 11 12 13 14 -45 -20 5 30 55 80 105 130

Input Voltage (V) Junction Temperature (°C)

FIGURE 2-3: Quiescent Current vs.Input FIGURE 2-6: Quiescent Current vs.
Voltage. Junction Temperature.

DS22008E-page 6  2010 Microchip Technology Inc.

 MCP1702
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).

1.24 1.23
VOUT = 1.2V VOUT = 1.2V
1.23 ILOAD = 0.1 mA 0°C
1.22
Output Voltage (V)

Output Voltage (V)

-45°C -45°C
1.22 0°C
1.21
+25°C
1.21
1.20 +90°C
1.20 +130°C +130°C
+90°C
1.19
+25°C 1.19

1.18 1.18
2 4 6 8 10 12 14 0 20 40 60 80 100
Input Voltage (V) Load Current (mA)

FIGURE 2-7: Output Voltage vs. Input FIGURE 2-10: Output Voltage vs. Load
Voltage. Current.

2.85 2.83
VOUT = 2.8V VOUT = 2.8V
2.84 ILOAD = 0.1 mA 2.82 +130°C
Output Voltage (V)

Output Voltage (V)

2.83 +130°C +90°C
+90°C 2.81
2.82
2.81 2.80
2.80
2.79
2.79 0°C 0°C
-45°C +25°C
+25°C 2.78
2.78 -45°C
2.77 2.77
3 4 5 6 7 8 9 10 11 12 13 14 0 50 100 150 200 250
Input Voltage (V) Load Current (mA)

FIGURE 2-8: Output Voltage vs. Input FIGURE 2-11: Output Voltage vs. Load
Voltage. Current.

5.04
VOUT = 5.0V VOUT = 5.0V
5.06 5.03
ILOAD = 0.1 mA
+130°C
Output Voltage (V)

Output Voltage (V)

5.04 +130°C 5.02 +90°C

+90°C
5.01
5.02
5.00
5.00 4.99 0°C
0°C -45°C
4.98
4.98 +25°C +25°C
4.97 -45°C

4.96 4.96
6 7 8 9 10 11 12 13 14 0 50 100 150 200 250
Input Voltage (V) Load Current (mA)

FIGURE 2-9: Output Voltage vs. Input FIGURE 2-12: Output Voltage vs. Load
Voltage. Current.

 2010 Microchip Technology Inc. DS22008E-page 7

MCP1702
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).

1.40
VOUT = 1.8V
1.30 +130°C
Dropout Voltage (V)

+90°C
1.20
+25°C
1.10
1.00
0°C
0.90
-45°C
0.80
0.70
0.60
100 120 140 160 180 200

Load Current (mA)

FIGURE 2-13: Dropout Voltage vs. Load FIGURE 2-16: Dynamic Line Response.
Current.

1.00
VOUT = 2.8V
0.90
0.80
Dropout Voltage (V)

+130°C
0.70 +90°C
0.60
+25°C
0.50
0.40
+0°C
0.30
-45°C
0.20
0.10
0.00
0 25 50 75 100 125 150 175 200 225 250
Load Current (mA)

FIGURE 2-14: Dropout Voltage vs. Load FIGURE 2-17: Dynamic Line Response.
Current.

0.50 600.00
VOUT = 5.0V VOUT = 2.8V
Short Circuit Current (mA)

0.45 ROUT < 0.1

500.00
0.40
Dropout Voltage (V)

+130°C
0.35 +90°C 400.00
0.30
+25°C 300.00
0.25
0.20
+0°C 200.00
0.15
-45°C
0.10 100.00
0.05
0.00 0.00
0 25 50 75 100 125 150 175 200 225 250 4 6 8 10 12 14

Load Current (mA) Input Voltage (V)

FIGURE 2-15: Dropout Voltage vs. Load FIGURE 2-18: Short Circuit Current vs.
Current. Input Voltage.

DS22008E-page 8  2010 Microchip Technology Inc.

 MCP1702
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).

0.20 0.20
VIN = 6V VOUT = 1.2V
0.15
VIN = 2.7V to 13.2V

Line Regulation (%/V)

Load Regulation (%)

0.10 0.16
0.05
0.00 0.12
-0.05 1 mA
VIN = 4V
-0.10 VIN = 10V VIN = 12V 0.08
0 mA
-0.15
-0.20 VIN = 13.2V 0.04 100 mA
VOUT = 1.2V
-0.25 ILOAD = 0.1 mA to 200 mA
-0.30 0.00
-45 -20 5 30 55 80 105 130 -45 -20 5 30 55 80 105 130
Temperature (°C) Temperature (°C)

FIGURE 2-19: Load Regulation vs. FIGURE 2-22: Line Regulation vs.
Temperature. Temperature.

0.40 0.20
VOUT = 2.8V VOUT = 2.8V
0.30
ILOAD = 1 mA to 250 mA VIN = 3.8V to 13.2V

Line Regulation (%/V)

Load Regulation (%)

0.20 0.16
250 mA
0.10
0.00 0.12 200 mA

-0.10
-0.20 VIN = 6V 0.08
0 mA
-0.30 VIN = 10V 100 mA
-0.40 VIN = 13.2V 0.04
VIN = 3.8V
-0.50
-0.60 0.00
-45 -20 5 30 55 80 105 130 -45 -20 5 30 55 80 105 130
Temperature (°C) Temperature (°C)

FIGURE 2-20: Load Regulation vs. FIGURE 2-23: Line Regulation vs.
Temperature. Temperature.

0.40 0.16
VOUT = 5.0V VOUT = 5.0V
ILOAD = 1 mA to 250 mA VIN = 6.0V to 13.2V
Line Regulation (%/V)
Load Regulation (%)

0.30 VIN = 6V 0.14

0.20 0.12 200 mA

250 mA
0 mA
0.10 0.10
VIN = 10V
VIN = 8V
0.00 0.08 100 mA
VIN = 13.2V
-0.10 0.06
-45 -20 5 30 55 80 105 130 -45 -20 5 30 55 80 105 130
Temperature (°C) Temperature (°C)

FIGURE 2-21: Load Regulation vs. FIGURE 2-24: Line Regulation vs.
Temperature. Temperature.

 2010 Microchip Technology Inc. DS22008E-page 9

MCP1702
Note: Unless otherwise indicated: VR = 2.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX).

0
-10
-20
-30
PSRR (dB)

-40
-50 VR=1.2V
-60 COUT=1.0 μF ceramic X7R
VIN=2.7V
-70 CIN=0 μF
-80 IOUT=1.0 mA
-90
0.01 0.1 1 10 100 1000
Frequency (kHz)

FIGURE 2-25: Power Supply Ripple FIGURE 2-28: Power Up Timing.

Rejection vs. Frequency.

0
-10
-20
-30
PSRR (dB)

-40
-50 VR=5.0V
-60 COUT=1.0 μF ceramic X7R
VIN=6.0V
-70 CIN=0 μF
-80 IOUT=1.0 mA
-90
0.01 0.1 1 10 100 1000
Frequency (kHz)

FIGURE 2-26: Power Supply Ripple FIGURE 2-29: Dynamic Load Response.
Rejection vs. Frequency.

100
VR=5.0V, VIN=6.0V IOUT=50 mA

10
Noise (μV/Hz)

VR=2,8V, VIN=3.8V
1

0.1 VR=1.2V, VIN=2.7V

0.01

0.001
0.01 0.1 1 10 100 1000
Frequency (kHz)

FIGURE 2-27: Output Noise vs. Frequency. FIGURE 2-30: Dynamic Load Response.

DS22008E-page 10  2010 Microchip Technology Inc.

 MCP1702
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

Pin No. Pin No. Pin No.
Symbol Function
SOT-23A SOT-89 TO-92
1 1 1 GND Ground Terminal
2 3 3 VOUT Regulated Voltage Output
3 2, Tab 2 VIN Unregulated Supply Voltage
– – – NC No connection

3.1 Ground Terminal (GND) 3.3 Unregulated Input Voltage Pin

Regulator ground. Tie GND to the negative side of the
(VIN)
output and the negative side of the input capacitor. Connect VIN to the input unregulated source voltage.
Only the LDO bias current (2.0 µA typical) flows out of Like all LDO linear regulators, low source impedance is
this pin; there is no high current. The LDO output necessary for the stable operation of the LDO. The
regulation is referenced to this pin. Minimize voltage amount of capacitance required to ensure low source
drops between this pin and the negative side of the impedance will depend on the proximity of the input
load. source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
3.2 Regulated Output Voltage (VOUT) operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
Connect VOUT to the positive side of the load and the requirement can be lowered. The type of capacitor
positive terminal of the output capacitor. The positive used can be ceramic, tantalum or aluminum
side of the output capacitor should be physically electrolytic. The low ESR characteristics of the ceramic
located as close to the LDO VOUT pin as is practical. will yield better noise and PSRR performance at
The current flowing out of this pin is equal to the DC high-frequency.
load current.

 2010 Microchip Technology Inc. DS22008E-page 11

MCP1702
4.0 DETAILED DESCRIPTION

4.1 Output Regulation 4.3 Overtemperature

A portion of the LDO output voltage is fed back to the The internal power dissipation within the LDO is a
internal error amplifier and compared with the precision function of input-to-output voltage differential and load
internal band gap reference. The error amplifier output current. If the power dissipation within the LDO is
will adjust the amount of current that flows through the excessive, the internal junction temperature will rise
P-Channel pass transistor, thus regulating the output above the typical shutdown threshold of 150°C. At that
voltage to the desired value. Any changes in input point, the LDO will shut down and begin to cool to the
voltage or output current will cause the error amplifier typical turn-on junction temperature of 130°C. If the
to respond and adjust the output voltage to the target power dissipation is low enough, the device will
voltage (refer to Figure 4-1). continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
4.2 Overcurrent protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
The MCP1702 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1702 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.

MCP1702

VIN VOUT

Error Amplifier
+VIN
Voltage
-
Reference
+

Overcurrent
Overtemperature

GND

FIGURE 4-1: Block Diagram.

DS22008E-page 12  2010 Microchip Technology Inc.

 MCP1702
5.0 FUNCTIONAL DESCRIPTION 5.2 Output
The MCP1702 CMOS LDO linear regulator is intended The maximum rated continuous output current for the
for applications that need the lowest current MCP1702 is 250 mA (VR  2.5V). For applications
consumption while maintaining output voltage where VR < 2.5V, the maximum output current is
regulation. The operating continuous load range of the 200 mA.
MCP1702 is from 0 mA to 250 mA (VR  2.5V). The A minimum output capacitance of 1.0 µF is required for
input operating voltage range is from 2.7V to 13.2V, small signal stability in applications that have up to
making it capable of operating from two or more 250 mA output current capability. The capacitor type
alkaline cells or single and multiple Li-Ion cell batteries. can be ceramic, tantalum or aluminum electrolytic. The
esr range on the output capacitor can range from 0 to
5.1 Input 2.0.
The input of the MCP1702 is connected to the source The output capacitor range for ceramic capacitors is
of the P-Channel PMOS pass transistor. As with all 1 µF to 22 µF. Higher output capacitance values may
LDO circuits, a relatively low source impedance (10) be used for tantalum and electrolytic capacitors. Higher
is needed to prevent the input impedance from causing output capacitor values pull the pole of the LDO
the LDO to become unstable. The size and type of the transfer function inward that results in higher phase
capacitor needed depends heavily on the input source shifts which in turn cause a lower crossover frequency.
type (battery, power supply) and the output current The circuit designer should verify the stability by
range of the application. For most applications (up to applying line step and load step testing to their system
100 mA), a 1 µF ceramic capacitor will be sufficient to when using capacitance values greater than 22 µF.
ensure circuit stability. Larger values can be used to
improve circuit AC performance. 5.3 Output Rise Time
When powering up the internal reference output, the
typical output rise time of 500 µs is controlled to
prevent overshoot of the output voltage. There is also a
start-up delay time that ranges from 300 µs to 800 µs
based on loading. The start-up time is separate from
and precedes the Output Rise Time. The total output
delay is the Start-up Delay plus the Output Rise time.

 2010 Microchip Technology Inc. DS22008E-page 13

MCP1702
6.0 APPLICATION CIRCUITS AND EQUATION 6-2:
ISSUES T J  MAX  = P TOTAL  R JA + T AMAX
Where:
6.1 Typical Application TJ(MAX) = Maximum continuous junction
The MCP1702 is most commonly used as a voltage temperature
regulator. Its low quiescent current and low dropout PTOTAL = Total device power dissipation
voltage makes it ideal for many battery-powered
RJA Thermal resistance from
applications.
junction to ambient
TAMAX = Maximum ambient temperature
MCP1702
VIN The maximum power dissipation capability for a
GND (2.8V to 3.2V)
VOUT package can be calculated given the junction-to-
VIN
1.8V CIN ambient thermal resistance and the maximum ambient
VOUT
1 µF Ceramic temperature for the application. The following equation
IOUT
COUT can be used to determine the package maximum
150 mA
1 µF Ceramic internal power dissipation.

FIGURE 6-1: Typical Application Circuit. EQUATION 6-3:

 T J  MAX  – T A  MAX  
6.1.1 APPLICATION INPUT CONDITIONS P D  MAX  = ---------------------------------------------------
R JA
Package Type = SOT-23A Where:
Input Voltage Range = 2.8V to 3.2V
PD(MAX) = Maximum device power
VIN maximum = 3.2V dissipation
VOUT typical = 1.8V TJ(MAX) = Maximum continuous junction
IOUT = 150 mA maximum temperature
TA(MAX) Maximum ambient temperature
6.2 Power Calculations RJA = Thermal resistance from
junction to ambient
6.2.1 POWER DISSIPATION
The internal power dissipation of the MCP1702 is a
function of input voltage, output voltage and output EQUATION 6-4:
current. The power dissipation, as a result of the
T J  RISE  = P D  MAX   R JA
quiescent current draw, is so low, it is insignificant
(2.0 µA x VIN). The following equation can be used to Where:
calculate the internal power dissipation of the LDO.
TJ(RISE) = Rise in device junction
EQUATION 6-1: temperature over the ambient
temperature
P LDO =  VIN  MAX   – V OUT  MIN    I OUT  MAX  
PTOTAL = Maximum device power
Where: dissipation
PLDO = LDO Pass device internal RJA Thermal resistance from
power dissipation junction to ambient
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage EQUATION 6-5:
T J = T J  RISE  + T A
The maximum continuous operating junction
temperature specified for the MCP1702 is +125°C. To Where:
estimate the internal junction temperature of the TJ = Junction Temperature
MCP1702, the total internal power dissipation is
TJ(RISE) = Rise in device junction
multiplied by the thermal resistance from junction to
temperature over the ambient
ambient (RJA). The thermal resistance from junction to
temperature
ambient for the SOT-23A pin package is estimated at
336°C/W. TA Ambient temperature

DS22008E-page 14  2010 Microchip Technology Inc.

 MCP1702
6.3 Voltage Regulator Junction Temperature Estimate
Internal power dissipation, junction temperature rise, To estimate the internal junction temperature, the
junction temperature and maximum power dissipation calculated temperature rise is added to the ambient or
are calculated in the following example. The power offset temperature. For this example, the worst-case
dissipation, as a result of ground current, is small junction temperature is estimated below.
enough to be neglected.
TJ = TJRISE + TA(MAX)
6.3.1 POWER DISSIPATION EXAMPLE
TJ = 113.3°C
Package Maximum Package Power Dissipation at +40°C
Package Type = SOT-23A Ambient Temperature Assuming Minimal Copper
Usage.
Input Voltage
VIN = 2.8V to 3.2V SOT-23 (336.0°C/Watt = RJA)
LDO Output Voltages and Currents PD(MAX) = (+125°C - 40°C) / 336°C/W
VOUT = 1.8V PD(MAX) = 253 milli-Watts
IOUT = 150 mA SOT-89 (153.3°C/Watt = RJA)
Maximum Ambient Temperature PD(MAX) = (+125°C - 40°C) / 153.3°C/W
TA(MAX) = +40°C PD(MAX) = 0.554 Watts
Internal Power Dissipation TO92 (131.9°C/Watt = RJA)
Internal Power dissipation is the product of the LDO PD(MAX) = (+125°C - 40°C) / 131.9°C/W
output current times the voltage across the LDO
PD(MAX) = 644 milli-Watts
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x 6.4 Voltage Reference
IOUT(MAX)
The MCP1702 can be used not only as a regulator, but
PLDO = (3.2V - (0.97 x 1.8V)) x 150 mA
also as a low quiescent current voltage reference. In
PLDO = 218.1 milli-Watts many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
Device Junction Temperature Rise equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
The internal junction temperature rise is a function of line regulation tolerance are the only errors introduced
internal power dissipation and the thermal resistance by the MCP1702 LDO. The low-cost, low quiescent
from junction to ambient for the application. The current and small ceramic output capacitor are all
thermal resistance from junction to ambient (RJA) is advantages when using the MCP1702 as a voltage
derived from an EIA/JEDEC standard for measuring reference.
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded Ratio Metric Reference
Surface Mount Packages”. The standard describes the 2 µA Bias PIC®
test method and board specifications for measuring the MCP1702 Microcontroller
thermal resistance from junction to ambient. The actual VIN
CIN VOUT VREF
thermal resistance for a particular application can vary 1 µF COUT
depending on many factors, such as copper area and GND
1 µF
thickness. Refer to AN792, “A Method to Determine ADO
How Much Power a SOT-23 Can Dissipate in an AD1
Application”, (DS00792), for more information
regarding this subject.
Bridge Sensor
TJ(RISE) = PTOTAL x RqJA
TJRISE = 218.1 milli-Watts x 336.0°C/Watt FIGURE 6-2: Using the MCP1702 as a
TJRISE = 73.3°C Voltage Reference.

 2010 Microchip Technology Inc. DS22008E-page 15

MCP1702
6.5 Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1702. The internal
current limit of the MCP1702 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1702. The typical current limit for the
MCP1702 is 500 mA (TA +25°C).

DS22008E-page 16  2010 Microchip Technology Inc.

 MCP1702
7.0 PACKAGING INFORMATION

7.1 Package Marking Information

3-Pin SOT-23A Example:
Standard
Extended Temp
Symbol Voltage * Symbol Voltage *

XXNN HA 1.2 HF 3.0 HANN

HB 1.5 HG 3.3
HC 1.8 HH 4.0
HD 2.5 HJ 5.0
HE 2.8 — —
Custom
GA 4.5 GC 2.1
GB 2.2 GD 4.1
* Custom output voltages available upon request.
Contact your local Microchip sales office for more information.

Standard
3-Lead SOT-89 Example:
Extended Temp
Symbol Voltage * Symbol Voltage *

XXXYYWW HA 1.2 HF 3.0 HA1014

HB 1.5 HG 3.3
NNN 256
HC 1.8 HK 3.6
HD 2.5 HH 4.0
HE 2.8 HJ 5.0
Custom
LA 2.1 H9 4.2
3-Lead TO-92 LB 3.2 — — Example:
* Custom output voltages available upon request.
Contact your local Microchip sales office for more information. 1702
XXXXXX
XXXXXX 1202E
XXXXXX TO^^
e3
YWWNNN 014256

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

 2010 Microchip Technology Inc. DS22008E-page 17

MCP1702

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DS22008E-page 18  2010 Microchip Technology Inc.

 MCP1702

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

 2010 Microchip Technology Inc. DS22008E-page 19

MCP1702

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DS22008E-page 20  2010 Microchip Technology Inc.

 MCP1702

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

 2010 Microchip Technology Inc. DS22008E-page 21

MCP1702

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DS22008E-page 22  2010 Microchip Technology Inc.

 MCP1702
APPENDIX A: REVISION HISTORY

Revision E (November 2010)

The following is the list of modifications:
1. Updated the Thermal Resistance Typical value
for the SOT-89 package in the Junction
Temperature Estimate section.

Revision D (June 2009)

The following is the list of modifications:
1. DC Characteristics table: Updated the VOUT
Temperature Coefficient’s maximum value.
2. Section 7.0 “Packaging Information”:
Updated package outline drawings.

Revision C (November 2008)

The following is the list of modifications:
1. DC Characteristics table: Added row to Output
Voltage Regulation for 1% custom part.
2. Temperature Specifications table: Numerous
changes to table.
3. Added Note 2 to Temperature Specifications
table.
4. Section 5.0 “Functional Description”,
Section 5.2 “Output”: Added second
paragraph.
5. Section 7.0 “Packaging Information”: Added
1% custom part information to this section. Also,
updated package outline drawings.
6. Product Identification System: Added 1%
custom part information to this page.

Revision B (May 2007)

The following is the list of modifications:
1. All Pages: Corrected minor errors in document.
2. Page 4: Added junction-to-case information to
Temperature Specifications table.
3. Page 16: Updated Package Outline Drawings in
Section 7.0 “Packaging Information”.
4. Page 21: Updated Revision History.
5. Page 23: Corrected examples in Product
Identification System.

Revision A (September 2006)

• Original Release of this Document.

 2010 Microchip Technology Inc. DS22008E-page 23

MCP1702
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO. X- XX X X X/ XX Examples:

a) MCP1702T-1202E/CB: 1.2V LDO Positive
Device Tape Output Feature Tolerance Temp. Package Voltage Regulator,
and Reel Voltage Code SOT-23A-3 pkg.
b) MCP1702T-1802E/MB: 1.8V LDO Positive
Voltage Regulator,
Device: MCP1702: 2 µA Low Dropout Positive Voltage Regulator
SOT-89-3 pkg.
c) MCP1702T-2502E/CB: 2.5V LDO Positive
Tape and Reel: T = Tape and Reel Voltage Regulator,
SOT-23A-3 pkg.
Output Voltage *: 12 = 1.2V “Standard” d) MCP1702T-3002E/CB: 3.0V LDO Positive
15 = 1.5V “Standard” Voltage Regulator,
18 = 1.8V “Standard” SOT-23A-3 pkg.
25 = 2.5V “Standard”
28 = 2.8V “Standard” e) MCP1702T-3002E/MB: 3.0V LDO Positive
30 = 3.0V “Standard” Voltage Regulator,
33 = 3.3V “Standard” SOT-89-3 pkg.
40 = 4.0V “Standard”
f) MCP1702T-3302E/CB: 3.3V LDO Positive
50 = 5.0V “Standard”
*Contact factory for other output voltage options. Voltage Regulator,
SOT-23A-3 pkg.
g) MCP1702T-3302E/MB: 3.3V LDO Positive
Extra Feature Code: 0 = Fixed
Voltage Regulator,
SOT-89-3 pkg.
Tolerance: 2 = 2.0% (Standard) h) MCP1702T-4002E/CB: 4.0V LDO Positive
1 = 1.0% (Custom) Voltage Regulator,
SOT-23A-3 pkg.
Temperature: E = -40C to +125C i) MCP1702-5002E/TO: 5.0V LDO Positive
Voltage Regulator,
TO-92 pkg.
Package Type: CB = Plastic Small Outline Transistor (SOT-23A)
(equivalent to EIAJ SC-59), 3-lead, j) MCP1702T-5002E/CB: 5.0V LDO Positive
MB = Plastic Small Outline Transistor Header, (SOT-89), Voltage Regulator,
3-lead SOT-23A-3 pkg.
TO = Plastic Transistor Outline (TO-92), 3-lead
k) MCP1702T-5002E/MB: 5.0V LDO Positive
Voltage Regulator,
SOT-89-3 pkg.

DS22008E-page 24  2010 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device Trademarks

applications and the like is provided only for your convenience
The Microchip name and logo, the Microchip logo, dsPIC,
and may be superseded by updates. It is your responsibility to
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
ensure that your application meets with your specifications.
PIC32 logo, rfPIC and UNI/O are registered trademarks of
MICROCHIP MAKES NO REPRESENTATIONS OR
Microchip Technology Incorporated in the U.S.A. and other
WARRANTIES OF ANY KIND WHETHER EXPRESS OR countries.
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
INCLUDING BUT NOT LIMITED TO ITS CONDITION, MXDEV, MXLAB, SEEVAL and The Embedded Control
QUALITY, PERFORMANCE, MERCHANTABILITY OR Solutions Company are registered trademarks of Microchip
FITNESS FOR PURPOSE. Microchip disclaims all liability Technology Incorporated in the U.S.A.
arising from this information and its use. Use of Microchip Analog-for-the-Digital Age, Application Maestro, CodeGuard,
devices in life support and/or safety applications is entirely at dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
the buyer’s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
hold harmless Microchip from any and all damages, claims, Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
suits, or expenses resulting from such use. No licenses are logo, MPLIB, MPLINK, mTouch, Omniscient Code
conveyed, implicitly or otherwise, under any Microchip Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
intellectual property rights. PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.

ISBN: 978-1-60932-690-6

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

 2010 Microchip Technology Inc. DS22008E-page 25

 Worldwide Sales and Service
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Farmington Hills, MI Tel: 86-21-5407-5533 Tel: 65-6334-8870
Tel: 248-538-2250 Fax: 86-21-5407-5066 Fax: 65-6334-8850
Fax: 248-538-2260
China - Shenyang Taiwan - Hsin Chu
Kokomo Tel: 86-24-2334-2829 Tel: 886-3-6578-300
Kokomo, IN Fax: 86-24-2334-2393 Fax: 886-3-6578-370
Tel: 765-864-8360
Fax: 765-864-8387 China - Shenzhen Taiwan - Kaohsiung
Tel: 86-755-8203-2660 Tel: 886-7-213-7830
Los Angeles Fax: 86-755-8203-1760 Fax: 886-7-330-9305
Mission Viejo, CA
Tel: 949-462-9523 China - Wuhan Taiwan - Taipei
Fax: 949-462-9608 Tel: 86-27-5980-5300 Tel: 886-2-2500-6610
Fax: 86-27-5980-5118 Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA China - Xian Thailand - Bangkok
Tel: 408-961-6444 Tel: 86-29-8833-7252 Tel: 66-2-694-1351
Fax: 408-961-6445 Fax: 86-29-8833-7256 Fax: 66-2-694-1350

Toronto China - Xiamen

Mississauga, Ontario, Tel: 86-592-2388138
Canada Fax: 86-592-2388130
Tel: 905-673-0699 China - Zhuhai
Fax: 905-673-6509 Tel: 86-756-3210040
Fax: 86-756-3210049

08/04/10

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