AN4299

Application note

Guidelines to improve conducted noise robustness on STM32F0 Series,

STM32F3 Series, STM32L0 Series and STM32L4 Series touch sensing
applications

Introduction
Different levels of immunity to conducted RF voltage are required by touch-sensing systems, depending on the application
(home appliances, automotive, health care, and so on). Moreover, touch sensing systems are often designed to meet the
requirements of industry standards, especially in the EMC compliance domain.
It is important to understand the environment in which the touch application is used, and to apply suitably adapted techniques to
address the effects of unwanted noise disturbances.
This application note provides a basic overview of conducted immunity testing, and some guidelines to keep the system reliable
when it is exposed to conducted noise.
Note that STMicroelectronics provides free STMTouch touch sensing firmware libraries, which are available either as standalone
packages (STM8L-TOUCH-LIB), or directly integrated into the corresponding STM32Cube package (STM32CubeL0,
STM32CubeF0, …).

AN4299 - Rev 4 - March 2018 - By SL www.st.com

For further information contact your local STMicroelectronics sales office.
 AN4299
General information

1 General information

This document applies to Arm®-based devices.

Note: Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

AN4299 - Rev 4 page 2/19

 AN4299
Conducted noise immunity

2 Conducted noise immunity

2.1 Signal to noise ratio (SNR)

The signal to noise ratio (SNR) is an important characteristic in the evaluation of a touch sensing system.
The SNR measurement results are only valid for a specified board and for the noise environment at the moment
of the measure. This is why the noise immunity is better evaluated by referring to a standard like IEC61000-4-6
where the noise level and the test conditions are specified.

2.2 IEC61000-4-6 standard

The IEC61000-4-6 standard specifies the test procedure to evaluate the noise immunity of an EUT (equipment
under test).

2.2.1 Standard IEC61000-4-6 test setup

The test consists in using a noise generator to inject modulated noise signals into the EUT power supply lines as
shown in the figure below.

Figure 1. Standard IEC61000-4-6 test setup

VDD EUT
DC (equipment under
power VSS test)
supply
0.1m

Earth
Generator
(noise source)

100R 50R

Touch sensing systems are based on capacitor variation measurements. The system must be able to detect
capacitive variations as low as few picofarads on the sensor electrodes. Therefore such systems may be sensitive
to conducted noise.
In a real touch sensing system, the main source of perturbation is introduced by the finger of the user. This is
because the user is in the electric path between the system and the earth. In the test setup shown in Figure
1. Standard IEC61000-4-6 test setup, the injected signal simulates the noise perturbations to which a system may
be exposed. By varying the frequency and the level of the injected signal, the test setup allows to characterize the
situations where the touch system becomes unreliable.

2.2.2 Injected signal characteristics

The injected signal is a swept modulated noise source with a sine wave envelope as shown in the figure below:
• The noise generator frequency range is swept from 150 kHz to 80 MHz. The frequency is swept
incrementally, the step size must not exceed 1 % of the preceding frequency value.
• The signal is 80 % amplitude modulated with a 1 kHz sine wave.

AN4299 - Rev 4 page 3/19

 AN4299
IEC61000-4-6 standard

Figure 2. Injected signal

√2

80%

80%
Vrms
Vpp
1 ms

The modulated noise signal amplitude may be expressed either in Vrms or Vpp. Here is the formula to convert
values from Vrms to Vpp:

Vpp value = Vrms × 2 × 1.8 × 1.2

2.2.3 Noise immunity evaluation

The EUT noise immunity is evaluated by testing the ability of the EUT to behave according the definition of a
given Class when it is submitted to a given noise level. The table below summarizes the different noise levels and
Classes.

Table 1. Test levels

Standard class \ noise level Level 1 Level 2 Level 3

1 Vrms 3 Vrms 10 Vrms

Class A: system work normally Pass/fail Pass/fail Pass/fail

Class B: Some degradation in operation may occur (false touch detection or touch masking), Pass/fail Pass/fail Pass/fail
but the product recovers once the stress is removed without any operator intervention
Class C: same as class B but need external action (such as reset or power off/on) to return to Pass/fail Pass/fail Pass/fail
normal state
Class D: system that losses function or degradation of performance which is not recoverable Pass/fail Pass/fail Pass/fail

2.2.4 IEC61000-4-6 standard limitation

As mentioned above, the minimum frequency step recommended by the standard to sweep the injected signal
from 150 kHz to 80 MHz is 1 % of the preceding frequency value. At 500 kHz this represents a 5 kHz step. On
most touch sensing systems, these steps are too large to be able to isolate the worst case situations. Some
applications with narrow critical wave band can pass 3 Vrms if the critical frequency falls just in the middle
between tested frequencies, whereas the same application does not pass 1 Vrms if the user sets the test exactly
on the critical frequency.
This is why it is important to set smaller steps around the critical frequencies. Sometime the standard bench is not
able to do the appropriate step (for example 100 Hz). Section 4 Test set up proposal to detect worst case
proposes a method to detect the worst case.

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Surface charge transfer acquisition principle overview

3 Surface charge transfer acquisition principle overview

The STM32F0 Series, STM32F3 Series and STM32L0 Series use a surface charge transfer acquisition principle.
This principle is briefly described below.
The surface charge transfer acquisition principle consists in charging a sensor capacitance (Cx) and transferring a
part of the accumulated charge into a sampling capacitor (Cs). This sequence is repeated until the voltage across
Cs reaches a given threshold (VIH in our case). The number of charge transfers required to reach the threshold is
a direct representation of the size of the electrode capacitance.
When the sensor is touched, the sensor capacitance to the earth is increased so the Cs voltage reaches the
threshold with less count and the measurement value decreases. When the measurement value falls below a
defined threshold, a detection is reported.
The noise injection disturbs the measurement proportionally to its amplitude and depending on its frequency. The
worst case is generally found at a noise frequency close to the charge transfer frequency (assuming no
techniques are used to spread this frequency).

Figure 3. Charge transfer equivalent capacitance model

VDD

User finger

Sensor capacitor
STM32 Cx
MCU

touchkey
sensor
Parasitic
eletrode
capacitor
Cp
Human
body
coupling
Sampling to earth
VSS capacitor
Cs Conducted noise path

Injected
noise

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 AN4299
Test set up proposal to detect worst case

4 Test set up proposal to detect worst case

Most of the IEC61000-4-6 compliant generators do not offer the ability to generate a step smaller than 1 kHz. As
previously indicated, to determine the most critical noise frequency, it is generally required to use 100 Hz steps or
even 10 Hz steps. The following setup is an alternative to find out the most critical noise frequencies and to
evaluate the robustness of the EUT at these frequencies.
Note: The noise frequencies impacting the equipment are generally around the charge transfer frequency and up to
40MHz. Higher noise frequency does not have an impact on the equipment operation.

4.1 Test setup

In order to simulate a human finger, a copper coin (from10 to16 mm diameter) with a 500 Ω serial resistor
connected to GND can be used.
The CDN adaptor is the same as the one used in IEC61000-4-6.

Figure 4. Test condition

Sine
generator
50R

500R
100R

Coin
CDN Sensor

USB to PC USB Panel

FILTER PCB
Board under test

4.2 Generator settings

1. Select “sine wave” and “sweep” mode.
2. Sweep menu: time = 300 sec, return time = 0, linear, interval = 1 ms
3. Set Vpp value on the generator to obtain the corresponding voltage injected on the EUT in case of standard
test.
Example: to test in the same condition as the standard at 3 Vrms, the user must adjust the generator voltage
to inject 15 Vpp measured on the board with oscilloscope.
Note: On AFG3102 TEKTRONIX generator, the modulation is not available in sweep mode.
4. Set the start and end frequencies such that the sweep range does not exceed 60 kHz for a 300 seconds
duration. This recommendation allows to detect worst case level with sufficient accuracy (typically less than
5 % error).
Note: An external amplifier might be needed in case the generator would not able to reach the appropriate injection
level.

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Data logging and data processing

4.3 Data logging and data processing

Data logging
The STMStudio tool log function can be used to collect data from variable
Example: “MyChannels_Data[x].Delta” and “MyTKeys[(x)].p_Data->StateId”
Note: STMStudio: order code STM6STUDIO.

Data processing

A graphical tool is recommended for analysis of the results. For example with Microsoft® Excel® 2D the user can
obtain the chart shown in Figure 5. Data processing.
In this example the frequency sweep starts at 500 kHz and ends at 550 kHz. Noise level is set on the generator to
4.6 Vpp (no modulation). The detect out threshold is set to 50, the sensor is touched and the detection is valid if
the measured delta is upper 50 else the touch detection is lost (error is reported). It means that 4.6 Vpp is the limit
to avoid detection loss (4.5 Vpp pass)
As a comparison, IEC61000-4-6 standard recommendation to use 1 % frequency steps would have lead to
explore only ten frequencies in this range, so the chances to detect worst case would have been very low!

Figure 5. Data processing

Delta
450
400
350
300
250
200
Worst case

150
100
50
0

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 AN4299
How to improve noise immunity

5 How to improve noise immunity

Two directions can be followed to improve noise immunity:

• decrease noise level
• increase signal (measurement sensitivity).
Note: In order to obtain a real benefit on the SNR, the noise reduction should not degrade the sensitivity and vice
versa.

5.1 Proposed improvement techniques

Several improvement techniques are introduced below:
• Active shield:
This feature increases the measurement sensitivity.
• Spread spectrum:
When activated, the spread spectrum creates several acquisition frequencies. This feature is particularly
appropriate for reducing overall noise level inside the measurement when the noise is concentrated on certain
frequencies (as opposed to a white noise).
• Detection thresholds:
Adjusting these parameters allows to optimize the reported detection which is a compromise between false
detection and detection loss.
• SW filter:
The SW filter such as debounce filter can be used to remove short and unwanted detections.
• Frequency hopping:
Upon detection of excessive noise on a dedicated channel, the firmware is able to change the acquisition
frequency in order to move out of the disturbed frequency range. There may be some situations where frequency
hopping and spread spectrum cannot be activated both at the same time. This is useful to get a Class B operation
with no false touch detections which is generally preferable than having some false touch detections.
• Channel blocking:
It consists in using an additional channel to detect noise and cancel touchkey detection if noise reaches a
determined threshold.
• Impedance path to earth:
Decreasing the impedance path to earth is also a good way to cancel the conducted noise effect (use of a metallic
chassis, system ground and earth connected together, ...). For instance, an application offering a direct
connection between the earth and the system ground is not impacted by the conducted noise.
Note: Such an approach does not improve the system performances when performing the conducted noise test
according to the IEC61000-4-6 standard.

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 AN4299
Active shield

5.2 Active shield

The active shield is an electrode which wraps around the sensor. The goal is to minimize the parasitic
capacitance between the sensor and the ground. To drive the shield electrode, a channel of a dedicated group
with its own Cs can be used.

Figure 6. Active shield

Rskey
IO1

Touchkey IO2
group X

IO3

IO4

Cskey Rsshield

IO1

IO2
Shield
group Y
IO3

IO4

Csshield

AN4299 - Rev 4 page 9/19

 AN4299
Active shield

Figure 7. Electrode and active shield waveforms

End acquisition Cs
shield level

End acquisition Cs
keysensor level

It is important to check the shied electrode waveform. Cs shield capacitance value and Rs shield serial resistor
value must be adjusted in order to obtain the same signal shape as sensor electrode waveform (same amplitude,
same response time).
The figure above shows the electrode sensor waveform in green and shield electrode waveform in yellow. Cs
shield is adjusted to obtain approximately the same charge level at the end of the acquisition.

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 AN4299
Active shield

Figure 8. Waveform detail

The figure above is a zoom of Figure 7. Electrode and active shield waveforms at the beginning of acquisition: Rs
and Cs shields are adjusted to obtain approximately the same rise and fall time on the shield electrode as sensor
electrode waveform.
When the active shield is properly implemented the count value is about twice as much as the count value without
active shield. Since the noise level is not increased, the SNR is improved by a factor of 2 and noise immunity as
well.
The negative impact of this feature is the requirement to dedicate two more IOs and one more touch sensing
group.

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 AN4299
Spread spectrum

5.3 Spread spectrum

Without Spread spectrum the main noise susceptibility is found at the acquisition frequency and its value is 1/TCD
(TCD = transfer cycle duration):
The main frequency (HCLK) in our STM32 comes from the PLL output. Preferably the highest frequency
recommended by specification is used (for STM32F0 Series it is 48 MHz) to offer an optimum response time.
This frequency is divided in the TSC cell by programmable prescaler (PGCLK). This frequency determines the
basic timing units for CTPH, CTPL:

Transfer cycle duration = (1/ (PGCLK) x ((CTPH + 1) + (CTPL + 1))) + (dead time = 2 x 1/ (HCLK)

By enabling the spread spectrum feature (TSLPRM_TSC_USE_SS to 1), the noise susceptibility is distributed on
multiple frequencies.
This is done by adding HCLK timing units (period) to CTPH.
TSLPRM_TSC_SSD allows to set the number of distributed frequencies:

from 0 = 1 x tSSCLK to 127 = 128 x tSSCLK

It is recommended to set TSLPRM_TSC_SSD to 127. In this case the number of distributed frequencies is 27 =
128. The results is a noise immunity improved by approximately a factor of 7.
The negative impact of this feature is the degradation of the acquisition speed and thus the response time.
TSLPRM_TSC_SSD set to 127 adds an average of 64 x (1/ 48 MHz) = 1.33 µs to each count. For a 2000 counts
acquisition duration, 2.6 ms is added due to spread spectrum activation.
Usually end users need a response time in less than 60 ms. Assuming the application uses 3 banks, that means
individual acquisition must be reported in less than 20 ms. If moreover a debounce filter is used (set to 2), this
time constraint must be divided further by a factor of 3. This leads to a maximum target time for one acquisition
equal to 6.6 ms.
One acquisition time = count number x transfer cycle duration (see “transfer cycle duration” formula above)

5.4 Threshold adjustment

Two thresholds can be adjusted:
• DETECT_IN is the threshold to set a detection, it is recommended to set it to 2/3 of delta signal while
touched with a normalized finger.
• DETECT_OUT is the threshold to reset a detection, this threshold is set to 1/3 of delta signal.
Example: if the delta when there is a touch is 150 counts: set TSLPRM_TKEY_DETECT_IN_TH to 100 and
TSLPRM_TKEY_DETECT_OUT_TH to 50.
Those values can be adjusted knowing they are a compromise between these 2 requirements:
• Avoid false detection on untouched adjacent key sensors
• Avoid detection loss.

5.5 SW filter (debounce)

The SW filter allows to reduce the false detections or detection losses. It is configured with parameters:
TSLPRM_DEBOUNCE_DETECT and TSLPRM_DEBOUNCE_RELEASE. Setting the parameter
TSLPRM_DEBOUNCE_DETECT to 2, means that 3 consecutive acquisitions with a touch detected are needed to
report a touch detection.
There is a trade-off. Increasing this parameter results in a longer response time between when a user touch
change occurs and when it is actually reported to the system.

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 AN4299
STM32303C-EVAL board example

6 STM32303C-EVAL board example

6.1 Firmware
The firmware used with the STM32303C-EVAL is the STM32F303_Ex01_2TKeys_EVAL and it belongs to the
STM32F3xx STMTouch Library. The results provided in this section are obtained with the configuration values
presented in the table below:

Table 2. User configuration settings related to immunity improvements

Parameter Configuration value

HCLK 48 MHz
TSLPRM_TKEY_DETECT_IN_TH 100
TSLPRM_TKEY_DETECT_OUT_TH 50
TSLPRM_DEBOUNCE_DETECT 2
TSLPRM_TSC_CTPH 1
TSLPRM_TSC_CTPL 1
TSLPRM_TSC_PGPSC 5
TSLPRM_TSC_USE_SS 1
TSLPRM_TSC_SSD 127

6.2 Performance
Here are the performances of an STM32303C-EVAL board, with the configuration described above:
• Acquisition is performed in 1200 counts
• Acquisition duration: 4.7 ms (target < 6.6 ms)

6.3 Conducted noise evaluation

Here are the conducted noise evaluation results performed on STM32303C-EVAL board according to
IEC61000-4-6 standard:
• Above 3 Vrms class A
The test conditions for the above result are:
• Frequency range from 150 kHz to 80 MHz
• 1 % frequency steps
• Dwell time 0.5 s
Here are more accurate test results on worst case bandwidth: no false detection or loss observed up to 4 Vrms,
from 200 to 400 kHz with 100 Hz steps.

AN4299 - Rev 4 page 13/19

 AN4299
Conclusion

7 Conclusion

On the STM32F0 Series, STM32F3 Series and STM32L0 Series microcontrollers, the touch sensing controller
peripheral shows a high noise immunity level in compliance with IEC61000-4-6 standard (above 3 Vrms class A).
These results can easily be reached by putting in practice the following recommendations:
• Implement an active shield electrode and enable the active shield feature in the firmware.
• Enable the spread spectrum feature in the firmware.
• Optimize the detection thresholds.
• Use the debounce filter.

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 AN4299

Revision history

Table 3. Document revision history

Date Revision Changes

03-Jul-2013 1 Initial release.

11-Jun-2014 2 Added suppRev 4ort for STM32L0 Series.
Updated last bullet in Section 5.1 Proposed improvement techniques.
22-Oct-2015 3 Added support for STM32L4 Series.
14-Mar-2018 4 Updated Figure 2. Injected signal.
Updated Figure 5. Data processing.
Added Arm logo in Section 1 General information.

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 AN4299
Contents

Contents
1 General information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Conducted noise immunity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Signal to noise ratio (SNR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2 IEC61000-4-6 standard . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2.1 Standard IEC61000-4-6 test setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2.2.2 Injected signal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2.2.3 Noise immunity evaluation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.2.4 IEC61000-4-6 standard limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Surface charge transfer acquisition principle overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Test set up proposal to detect worst case . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Test setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 Generator settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.3 Data logging and data processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

5 How to improve noise immunity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5.1 Proposed improvement techniques . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.2 Active shield . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.3 Spread spectrum . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.4 Threshold adjustment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.5 SW filter (debounce) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 STM32303C-EVAL board example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

6.1 Firmware . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.2 Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6.3 Conducted noise evaluation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

7 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
List of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
List of figures. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

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List of tables

List of tables
Table 1. Test levels. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Table 2. User configuration settings related to immunity improvements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 3. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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List of figures

List of figures
Figure 1. Standard IEC61000-4-6 test setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Figure 2. Injected signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Figure 3. Charge transfer equivalent capacitance model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 4. Test condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 5. Data processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 6. Active shield. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 7. Electrode and active shield waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 8. Waveform detail . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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 AN4299

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved

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