Silicon NPN Power Transistors: Inchange Semiconductor Product Specification
Uploaded by
Sebastian CorreaSilicon NPN Power Transistors: Inchange Semiconductor Product Specification
Uploaded by
Sebastian CorreaInchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3907
DESCRIPTION ·
·With TO-3P(I) package
·Complement to type 2SA1516
APPLICATIONS
·Audio and general purpose power
amplifier applications
·Recommend for 80W high fidelity audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1 Base
Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3P(I)) and symbol
3 Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 180 V
VCEO Collector-emitter voltage Open base 180 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current 12 A
IB Base current 1.2 A
PC Collector power dissipation TC=25℃ 130 W
Tj Junction temperature 150 ℃
Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3907
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 180 V
VCEsat Collector-emitter saturation voltage IC=8 A;IB=0.8 A 0.3 2.0 V
VBE Base-emitter voltage IC=7A ; VCE=5V 1.0 1.5 V
ICBO Collector cut-off current VCB=180V; IE=0 5 μA
IEBO Emitter cut-off current VEB=5V; IC=0 5 μA
hFE-1 DC current gain IC=1A ; VCE=5V 55 180
hFE-2 DC current gain IC=7A ; VCE=5V 35
fT Transition frequency IC=1A ; VCE=5V 30 MHz
COB Output capacitance IE=0; VCB=10V;f=1MHz 270 pF
hFE-1 classifications
R O
55-110 90-180
2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC3907
PACKAGE OUTLINE
