INTEGRATED CIRCUITS

DATA SHEET

TEA1504
GreenChip SMPS control IC
Preliminary specification 1999 Dec 07
Supersedes data of 1998 Mar 17
File under Integrated Circuits, IC11
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

FEATURES GENERAL DESCRIPTION

Distinctive features The GreenChip TEA1504 is intended for off-line
90 to 276 V (AC) power supply applications. It is one of a
• High level of integration reduces the number of
family of high voltage ICs integrating both analog and
components by up to 50 compared to power supply
digital circuit functions for controlling a switched mode
using discrete components
power supply (SMPS). Its functions include integrated high
• On/off functional switch replaces expensive mains voltage start-up current source, voltage Pulse Width Mode
switch (PWM) control, 5% accurate oscillator, band-gap derived
• Direct off-line operation (90 to 276 V AC) reference voltages, comprehensive fault protection and
leading edge blanking. Its high level of integration allows
• 5% accurate on-chip oscillator.
power supplies to be cost effective, compact, lightweight,
highly efficient, more reliable, and simple to design.
Green features
Efficient green features permit very low power operation
• Low power consumption in off-mode (<100 mW) modes, and an innovative on/off function allows an
• Fast and efficient on-chip start-up current source expensive mains switch to be replaced with a low-cost
functional switch.
• Burst mode standby (<2 W) for overall improved system
efficiency
• Low power operation mode with lower frequency THE GREENCHIP FAMILY
reduces switching losses The GreenChip family of ICs are fully integrated with
• Low Overcurrent Protection (OCP) level. most common PWM functions such as error amplifier,
oscillator, bias current generator and band-gap based
Protection features reference voltage circuits. The high level of integration
allows easy and cost effective power supply design.
• Demagnetization protection The ICs are made by a Philips proprietary high voltage
• Cycle-by-cycle current limitation with programmable BCDMOS process which produces low voltage circuit
current trip level devices with inputs that are able to withstand up to 720 V.
• Overvoltage protection
• Overtemperature protection
• Safe-restart mode with reduced power for system fault
conditions.

Highly versatile
• Usable in buck and flyback topology
• Interfaces both primary and secondary side feedback.

ORDERING INFORMATION

PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
TEA1504 DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1

1999 Dec 07 2
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

BLOCK DIAGRAM

handbook, full pagewidth REF Vaux Vi

8 6 1

Vaux START-UP
MANAGEMENT CURRENT SOURCE
on/off

TEA1504
14 1 kΩ
OOB

5.5 V
burst mode
stand-by
6Ω 7
R DS
OVER 6Ω
Q 4
TEMPERATURE DRIVER
PROTECTION S
driver
stage
9
CTRL PULSE WIDTH
MODULATOR
SAMPLE SAMPLE
OVER CURRENT
AND AND
PROTECTION
HOLD1 HOLD2
inverting
error comparator 5
amplifier LEADING EDGE I sense
BLANKING
13
DEM
DEMAGNETIZATION
OSCILLATOR
MANAGEMENT FREQUENCY
CONTROL
duty cycle limiting
NEGATIVE signal
CLAMP
11 2 3 10 12
MGS569
GND HVS n.c. n.c. n.c.

Fig.1 Block diagram.

1999 Dec 07 3
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

PINNING

SYMBOL PIN DESCRIPTION

Vi 1 start-up current source input;
connects to MOSFET Drain supply
HVS 2 high voltage safety spacer
n.c. 3 not connected
DRIVER 4 driver output; connects to Gate of handbook, halfpage
Vi 1 14 OOB
power MOSFET
Isense 5 current sense input; connects to HVS 2 13 DEM

current sense resistor n.c. 3 12 n.c.

Vaux 6 IC supply; connects to supply DRIVER 4 11 GND
TEA1504
capacitor
Isense 5 10 n.c.
DS 7 internal driver supply
Vaux 6 9 CTRL
REF 8 reference input; connects to
reference resistor for setting internal DS 7 8 REF
reference currents
MGS570
CTRL 9 duty cycle control input
n.c. 10 not connected
GND 11 ground
n.c. 12 not connected
DEM 13 demagnetization signal input
OOB 14 burst mode standby on/off control Fig.2 Pin configuration.
signal input

FUNCTIONAL DESCRIPTION Start-up current source and Vaux management

Negligible power is dissipated by the TEA1504 after A versatile on-chip start-up current source eliminates the
start-up, due to its fast and efficient start-up circuit. It has need for an external, highly dissipative trickle-charge
an accurate saw tooth oscillator whose output signal is circuit. See Figs 1 and 3. The start-up current source is
compared with a voltage feedback control circuit to supplied by rectified mains power via Vi (pin 1). It supplies
generate a pulse width modulated signal for driving the charging current to the IC supply capacitor (Caux) and also
Gate of an external power MOSFET. The number of supplies current to the IC control circuit
external components required for regulating the supply are (Vaux management) (see Istart(Vaux)L and Istart(Vaux)H in
reduced due to an innovative design implementing both Chapter “Characteristics”). Once Caux is charged to its
primary and secondary side regulation. Overvoltage, start-up voltage level (11 V), the oscillator starts oscillating
overcurrent, overtemperature and demagnetization and the IC starts switching the power MOSFET. Power is
features protect the IC from system fault conditions. then supplied to the load via the secondary winding. Caux
Off-mode, Burst mode standby, and a Low power is also supplied by an auxiliary winding on the primary side
operation mode are advanced features that greatly which is coupled to the secondary winding supplying the
enhance the efficiency of the overall system. Off-mode, output capacitor (Co). As the voltage on Co increases and
reduces the power consumption of the IC below 100 mW. approaches its nominal value, Caux is re-supplied with
Burst mode standby, reduces the power consumption of current by the auxiliary winding (see Fig.4). For correct
the system to below 2 W. Low power operation mode, operation, it is important that Caux starts to be re-supplied
reduces the operating frequency of the system during low with current by the auxiliary winding before its voltage
load conditions to reduce switching losses. drops to the Under Voltage Lockout (UVLO) level of
8.05 V.

1999 Dec 07 4
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

The start-up current source also helps to implement the Figure 5 shows the relevant waveforms during safe-restart
safe-restart or ‘hiccup’ mode required during system fault mode. To achieve a low ‘hiccup’ duty cycle, the current
conditions: output short-circuit, output open-circuit, and charging Caux during the safe-restart mode is lower than it
overvoltage. Under these fault conditions, the IC inhibits is during normal start-up (see Irestart(Vaux) and Istart(Vaux)H in
the normal operation of the system and stops delivering Chapter “Characteristics”). This reduces the risk, during
output power. If the output is short-circuited, Caux is no an output short-circuit condition, of any physical damage
longer supplied by the auxiliary winding and its voltage being caused to output secondary winding devices, and of
drops to the UVLO level. If the output open-circuits, the any breach of safety. The start-up current source is also
output voltage rises to the Overvoltage Protection (OVP) important for implementing burst mode standby, explained
level. The IC detects this state and stops switching the in Section “Burst mode standby” (see Irestart(Vaux) in
power MOSFET, which stops re-supplying current to Caux Chapter “Characteristics”).
whose voltage starts to drop. Once the voltage on Caux
drops to the UVLO level, the start-up current source
re-activates and charges Caux to the start-up level, and the
system begins the safe-restart mode cycle, similar to the
normal start-up cycle.

handbook, full pagewidth Vmains

Vo

Co

(1)
OOB Vi
14 1

DEM HVS
13 2

n.c. n.c.
12 3
power
GND DRIVER MOSFET
11 TEA1504 4

n.c. Isense
10 5

CTRL Vaux
9 6

REF DS
8 7

RDEM CCTRL RREF Caux Rsense auxiliary

winding

MGS571

(1) Secondary earthing points are isolated from their primary earthing points.

Fig.3 Typical flyback application.

1999 Dec 07 5
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

Reference
All reference voltages are derived from a temperature
(2)
11 V compensated, on-chip, band-gap. The band-gap
VVaux
(4) reference voltage is also used with an external
8.05 V resistor (RREF) connected to REF (pin 8), to generate
(3)
accurate, temperature independent, IC internal
(1)
V REF
bias currents. I REF = -------------- [ A ] .
R REF

RREF also affects the frequency of the oscillator (see

t
Section “Oscillator”).
Vo
Sample-and-hold
The TEA1504 uses voltage feedback with an innovative
sample-and-hold circuit to regulate the output voltage.
t In a primary feedback configuration, the sample-and-hold
circuit samples the current into DEM (pin 13), fed by RDEM,
VG which relates to the output voltage (Vo) during the period
switching
(power that current flows in the secondary winding.
MOSFET)
off
aVo = IREF × RDEM + Vclamp(DEM)(pos).
t MGS572
Vclamp(DEM)(pos) is specified in Chapter “Characteristics”;
‘a’ = a constant determined by the turns ratio of the
(1) Start-up current source charges Caux. transformer.
(2) Start-up voltage.
(3) UVLO level.
The sampled current is held in the external capacitor
(4) Auxiliary winding charges Caux. (CCTRL). The PWM uses the voltage on CCTRL to set the
operating duty cycle of the power MOSFET. When the
Fig.4 Normal start-up waveforms. TEA1504 is used in a secondary feedback configuration,
the feedback voltage is provided by an opto-coupler.

handbook, full pagewidth MGS647

VVaux
fault condition

normal operation
(1)

VG
(power
MOSFET)

switching off t

(1) Start-up current source charges Caux.

Fig.5 Safe-restart mode waveforms.

1999 Dec 07 6
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

Pulse width modulator A low driver source current has been chosen in order to
limit the ∆V/∆t at switch-on. This reduces Electro Magnetic
The PWM comprises an inverting error amplifier and a
Interference (EMI) and also the current spike across
comparator (see Fig.1) which drives the power MOSFET
Rsense.
with a duty cycle that is inversely proportional to the
voltage at CTRL (pin 9). A signal from the oscillator sets a
Demagnetization protection
latch that turns on the power MOSFET. The latch is then
reset either by the signal from the PWM or by a duty cycle The demagnetization protection feature ensures
limiting signal from the oscillator. The latch stops the discontinuous conduction of the power supply, simplifying
power MOSFET from being switched incorrectly if the the design of feedback control and giving a faster transient
PWM output signal becomes unstable. The maximum duty response. It protects against saturation of the
cycle is internally set to 80%. The IC switching signals transformer/inductor and also protects the power supply
during normal operation are shown in Fig.7. components against excessive stresses at start-up, when
all energy storage components are completely discharged.
Oscillator During a system output short-circuit fault condition, it
provides cycle-by-cycle protection of the converter
The oscillator determines the switching duty cycle.
configuration. The demagnetization resistor (RDEM) value
Its ramp signal voltage is compared to the output of the
can be calculated using the formula given in Section
error amplifier by the PWM. The fully integrated oscillator
“Sample-and-hold”.
circuit works by charging and discharging an internal
capacitor between two voltage levels to create a sawtooth
waveform with a rising edge that is 80% of the oscillator
period (high frequency mode). This ratio sets a maximum
switching duty cycle of 80% for the IC. The accuracy of the 110
MGS573
55
handbook, halfpage
oscillator frequency is internally set to 5%. Its frequency f oscH f oscL
can be adjusted between 50 and 100 kHz by changing the (kHz) (kHz)
value of RREF. This gives the power supply designer
greater flexibility in the choice of system components. 90 45

The relationship between frequency and the value of RREF

is shown in Fig.6. The range of RREF values and the
frequencies of foscL and foscH are specified in Chapter 70 35
(1)
“Characteristics”.
(2)
Multi frequency control
50 25
When the power supply operates at or below 1⁄9 of its peak
power, the IC changes to low power operation mode.
This lowers the frequency of the oscillator to reduce the 30 15
power supply switching losses. The ratio between the high 10 20 30 40
RREF (kΩ)
and the low oscillator frequency is maintained at 1 : 2.5
(see foscL in Chapter “Characteristics”). An innovative
design ensures that the transfer from high-to-low
(1) High frequency mode.
frequency and vice versa does not effect output voltage (2) Low frequency mode.
regulation.

Gate driver Fig.6 Frequency as function of RREF value.

The driver circuit to the Gate of the power MOSFET has a

totem-pole output stage that has current sourcing Negative clamp
capability of 120 mA and a current sink capability of
The negative clamp circuit ensures correct operation of
550 mA. This permits fast turn-on and turn-off of the power
the IC by preventing the voltage at DEM (pin 13) dropping
MOSFET for efficient operation. This circuit design allows
below −0.45 V, during the period when the power
the power supply designer to control the source and sink
MOSFET turns on and the auxiliary winding voltage goes
currents of the Gate driver circuit with a minimum number
negative.
of external components.

1999 Dec 07 7
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

handbook, full pagewidth

VVi

VVi
VD
(power
MOSFET)

Vo

VVaux

VG
(power
MOSFET)

IVaux

(1)

VOOB

VµC

start-up normal overvoltage output short burst mode stand-by normal

sequence operation protection circuit operation
MGS574

(1) All negative currents flow out of the IC.

Fig.7 Typical waveforms.

1999 Dec 07 8
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

Overvoltage protection Figure 8 shows a flyback converter configured to use the

on/off mode. Switch S1 connects OOB (pin 14) to either a
The OVP circuit senses the voltage at Vaux (pin 6). If the
voltage close to ground, or to a voltage typically greater
output voltage exceeds the preset voltage limit, the OVP
than 2.5 V. The OOB voltage is detected internally by
circuit turns off the power MOSFET preventing the
the IC. If VOOB is low, the IC enters the off-mode,
re-supply of current to Caux. VVaux drops to the UVLO level
consuming a current of typically 350 µA (see Ioff(Vi) in
and the system enters the low dissipation safe-restart
mode described earlier. The system recovers from the Chapter “Characteristics”). If VOOB is typically 2.5 V,
safe-restart mode only if the OVP condition is removed. the IC enters the start-up sequence and begins normal
operation (see Vth(on/off) in Chapter “Characteristics”).
Overcurrent protection Figure 9 shows a ‘Mains Under Voltage Lock
Out’ (MUVLO) circuit using 3 resistors. Assuming that R3
Cycle-by-cycle OCP is provided by sensing the voltage is chosen to be a very high value, the IC starts operating
on Rsense. The voltage on Rsense relates to the amplitude
R1
of the primary current, and is internally compared with a when: V mains ≈ -------- × V OOB [ V ] ; where R1 >> R2.
R2
reference voltage using a high speed comparator.
The comparator threshold voltage is specified as Vth(Isense) This ensures that the power supply only starts working
in the Chapter “Characteristics”. above a Vmains of 80 V for example. The bleeder current
through R1 should be low (e.g. 30 µA at 300 V).
The maximum primary (protection) current is therefore:
V th ( Isense )
I prot = --------------------------- [ A ] . Burst mode standby
R sense
OOB (pin 14) is also used to implement the burst mode
If the power MOSFET current exceeds the current limit, the standby. In burst mode standby, the power supply enters
comparator changes state, turning off the power MOSFET. a special low dissipation state where it typically consumes
The power MOSFET is typically turned off in 210 ns less than 2 W of power. Figure 9 shows a flyback
(see td(Isense-DRIVER) in Chapter “Characteristics”). converter using the burst mode standby function.
The system enters burst mode standby when the
Having Rsense off-chip allows the power supply designer
microcontroller closes switches S2 and S3 on the
greater flexibility for programming the OCP threshold level.
secondary side. Switch S2 connects the output secondary
It also reduces the risk of an overcurrent condition being
winding to microcontroller capacitor (CµC) bypassing Co.
sensed incorrectly. When the power MOSFET turns on,
When the voltage on (CµC) exceeds the zener voltage, the
the discharge current from the demagnetization ∆V/∆t
opto-coupler is activated sending a signal to OOB.
limiting capacitor, flows through the power MOSFET
In response to this signal, the IC stops switching and
instead of through Rsense.
enters a ‘hiccup’ mode. Figure 7 shows the burst-mode
The Leading Edge Blanking circuit inhibits the operation of standby signals. The hiccup mode during burst mode
the OCP comparator for a short period when the power standby operation differs from the hiccup mode in
MOSFET turns on (see tblank(le) in Chapter safe-restart mode during a system fault condition.
“Characteristics”). This ensures that the power MOSFET is For safe-restart mode, the power has to be reduced.
not turned off prematurely due to the false sensing of an Burst mode standby requires sufficient power to supply the
overcurrent condition caused by current spikes produced microcontroller. To prevent transformer rattle, the
by the discharge of primary-side snubber and parasitic transformer peak current is reduced by a factor of 3.
capacitances. The tblank(le) is not fixed and tracks the Burst mode standby operation continues until the
oscillator frequency. microcontroller opens switches S2 and S3. The system
then enters the start-up sequence and begins normal
Overtemperature protection switching behaviour.
Overtemperature protection is provided by an analog
temperature sensing circuit which turns off the power
MOSFET when the temperature exceeds typically 140 °C.

On/off mode
The on/off mode allows an expensive mains switch to be
replaced by an in-expensive functional switch.

1999 Dec 07 9
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); note 1.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Vi DC voltage on pin Vi measured at 200 µA − 720 V
VOOB voltage on pin OOB −0.3 +14 V
IDEM current on pin DEM − ±1 mA
VCTRL voltage on pin CTRL −0.3 +5 V
Vlsense voltage on pin Isense −0.3 +5 V
IREF current on pin REF − −1 mA
VVaux voltage on pin Vaux −0.3 +18 V
VDS voltage on pin DS −0.3 +18 V
Tj junction temperature −10 +140 °C
Tstg storage temperature −40 +150 °C
Vesd electrostatic discharge class 1
human body model note 2 − 1250 V
machine model note 3 − 200 V

Notes
1. All voltages are referenced to GND (pin 11).
2. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor.
3. Equivalent to discharging a 200 pF capacitor through a 0.75 mH coil.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient 70 K/W

QUALITY SPECIFICATION
Quality specification “SNW-FQ-611 part E” is applicable.

1999 Dec 07 10
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

CHARACTERISTICS
Tj = −10 to +110 °C; VVi = 300 V; RREF = 24.9 kΩ (0.1%); VVaux = 8.6 to 13 V. Positive currents flow into the IC.
Negative currents flow out of the IC. All voltages are referenced to GND (pin 11).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Start-up current source and Vaux management (pins 1 and 6)
Vstart(Vi)(min) minimum start-up voltage on Vi 100 − − V
Vstart(Vaux) start-up voltage on Vaux 10.4 11 11.6 V
VUVLO(Vaux) under-voltage lockout on Vaux 7.4 8.05 8.6 V
Vhys(Vaux) hysteresis voltage on Vaux Vstart(Vaux) − VUVLO(Vaux) 2.60 2.95 3.30 V
Ii(Vi) input current on Vi normal operation 20 60 100 µA
Ioff(Vi) off mode current on Vi VOOB < 1.95 V 150 350 550 µA
Istart(Vaux)L low start-up current on Vaux 0 V < VVaux < 0.73 V −270 −230 −190 µA
Istart(Vaux)H high start-up current on Vaux 0.5 V < VVaux < Vstart(Vaux) −5.0 −3.0 −1.0 mA
lsup(Vaux)(oper) operating supply current on Vaux no load on DRIVER (pin 4) 3.5 3.85 4.2 mA
Irestart(Vaux) restart current on Vaux in OCP mode −600 −530 −460 µA
in burst standby mode −2.5 −2.1 −1.7 mA
Vclamp(Vaux) clamping voltage on Vaux lVaux = 5 mA 15 − 18 V
Reference input (pin 8)
Vi(REF) reference input voltage 2.37 2.47 2.57 V
RREF(oper) operating reference resistor 16.9 24.9 33.2 kΩ
Oscillator
foscL oscillator low frequency low power operation mode 27.5 29 30.5 kHz
foscH oscillator high frequency normal mode 66 70 74 kHz
δmax maximum duty cycle f = foscH 78 80 82 %
foscH/foscL ratio between oscillator high and low 2.30 2.45 2.60
frequencies
∆foscH oscillator high frequency range with changing RREF 50 70 100 kHz
Demagnetization management (pin 13)
Vth(DEM) demagnetization comparator VDEM decreasing 50 65 80 mV
threshold voltage on DEM
tP(DEM-BUF) propagation delay from DEM to output 300 500 700 ns
buffer
Ii(bias)(DEM) input bias current on DEM VDEM = 65 mV −0.5(1) − −0.1(1) µA
Vclamp(DEM)(neg) negative clamp voltage level on DEM IDEM = −500 µA −0.45 −0.35 0 V
Vclamp(DEM)(pos) positive clamp voltage level on DEM IDEM = 100 µA 2.3 2.6 2.9 V
Sample-and-hold (pin 13)
Ictrl(DEM)(oper) operating control current on DEM lREF = 100 µA 90 100 110 µA
Ith(sample) sample threshold current as % of 78 83 88 %
Ictrl(DEM)
tP(DEM-COMP) propagation delay from DEM to ∆VDEM/∆t positive (500 V/µs) 170 450 730 ns
current comparator ∆VDEM/∆t negative (10 V/µs) 20 90 160 ns

1999 Dec 07 11
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Overvoltage protection (pin 6)
VOVP(max) maximum OVP voltage level fixed maximum level 14.0 14.7 15.5 V
td(OVP) OVP delay time 350 550 800 ns
Isense Overcurrent protection and low power operation mode (pin 5)
tblank(le) leading edge blanking time RREF = 0.7 × RREF(nominal) 180 260 340 ns
RREF = RREF(nominal) 240 340 440 ns
RREF = 1.3 × RREF(nominal) 415 470 560 ns
Vth(Isense) comparator threshold voltage on Isense at maximum current 0.46 0.49 0.53 V
td(Isense-DRIVER) delay from Isense to DRIVER at ∆V/∆t = 200 mV/µs 150 210 270 ns
(MOSFET off)
Vth(lpom) threshold voltage for switch-over to 155 165 175 mV
low power operation mode
Duty cycle control (pin 9)
∆δ/∆VCTRL variation of duty cycle with voltage on foscH 95 85 75 %/V
CTRL foscL 60 50 40 %/V
VCTRL(min) minimum control voltage on CTRL 2.00 2.15 2.30 V
VCTRL(max) maximum control voltage on CTRL 2.90 3.05 3.20 V
IL(CTRL) input/output leakage current on CTRL −1(1) − +1(1) µA
Overtemperature protection
Tth(over) threshold overtemperature 130 140 155 °C
On/off mode and burst mode standby (pin 14)
Vth(on/off) switch-over to on/off mode threshold 2.3 2.5 2.8 V
voltage
Vth(burst)(on) burst mode standby active threshold 6.5 − 7.5 V
voltage
Vth(burst)(off) burst mode standby inactive threshold − − 5.5 V
voltage
IO(OOB) output current on OOB VOOB > 400 mV −0.5(1) − −0.1(1) µA
DRIVER (pin 4)
RDSonH Drain/Source on-state resistance VVaux = 8.5 V and 15 22 50 Ω
(output going high) VDRIVER = 6.5 V
RDSonL Drain/Source on-state resistance VVaux = 8.5 V and 3 6 15 Ω
(output going low) VDRIVER = 2 V
Isource source current of MOSFET VVaux = 8.5 V and −280 −120 −100 mA
VDRIVER = 2 V
Isink sink current of MOSFET VVaux = 8.5 V and 150 250 500 mA
VDRIVER = 2 V
VVaux = 8.5 V and 400 550 900 mA
VDRIVER = 8.5 V
Note
1. Guaranteed by design.

1999 Dec 07 12
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

APPLICATION INFORMATION A capacitor (CCTRL) having a low value of typically

0.2 to 2 nF is used by the internal sample-and-hold circuit
A converter using the TEA1504 is usually either a flyback
to regulate the primary feedback circuit. CCTRL is
or a buck converter that comprises EMI filter, full bridge
connected to CTRL (pin 9). This pin is also the input for
rectifier, filter capacitor, transformer, output stage(s) and
the opto-coupler signal in a secondary sensing
some snubber circuitry. Depending upon the type of
configuration. Pin 11 is connected to ground. The primary
feedback used, either an auxiliary winding (primary
side auxiliary winding is connected by resistor (RDEM)
regulation) or an opto-coupler (secondary regulation) is
to DEM (pin 13). The DEM input is also used for primary
used. Very few external components are used due to the
side regulation. Input OOB (pin 14) implements both the
high level of chip integration. A sense resistor (Rsense)
on/off and the burst mode standby functions. The supply
converts the primary current into a voltage at Isense (pin 5).
connected to Vi (pin 1) is used by the internal start-up
The IC uses this voltage to set the peak current of the
current source for charging capacitor Caux during start-up
converter. An auxiliary winding supplies capacitor Caux
and safe-restart modes.
which buffers the IC’s internal supply. The auxiliary
winding is also used as part of the primary output voltage For additional information also see: ‘application note
regulation circuit. A resistor (RREF) determines the IC’s AN98011: “200 W SMPS with TEA1504”’.
reference currents into REF (pin 8).

handbook, full pagewidth Vmains

Vo

Co

output on/off
mode switch (1)
OOB Vi
14 1
S1
DEM HVS
13 2

n.c. n.c.
12 3
power
GND DRIVER MOSFET
11 TEA1504 4

n.c. Isense
10 5
RCTRL
CTRL Vaux
9 6
(1)
REF DS
8 7

RDEM RREF Caux Rsense auxiliary

winding

MGS575

(1) Secondary earthing points are isolated from their primary earthing points.

Fig.8 Typical flyback configuration with secondary sensing and on/off feature.

1999 Dec 07 13
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

handbook, full pagewidth Vmains

Vo

R1

Co
S2
R2

S1 Vi (1)
OOB
14 1
output on/off VµC
mode switch R3 DEM HVS
13 2

n.c. n.c.
12 3
power
GND DRIVER MOSFET
11 TEA1504 4
Isense CµC
n.c.
10 5

R4 CTRL Vaux S3
9 6

RCTRL REF DS
8 7 (1)

auxiliary burst-mode
RDEM CCTRL RREF Caux Rsense
winding stand-by on/off
from
microcontroller

MGS576

(1) Secondary earthing points are isolated from their primary earthing points.

Fig.9 Flyback configuration with secondary sensing using the burst mode standby and on/off feature.

1999 Dec 07 14
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

handbook, full pagewidth Vmains

Vo

Co
output on/off
mode switch
OOB Vi
14 1
S1
DEM HVS
13 2

n.c. n.c.
12 3
power
GND DRIVER MOSFET
11 TEA1504 4

n.c. Isense
10 5

CTRL Vaux
9 6

REF DS
8 7

RDEM RREF Caux Rsense

RCTRL

MGS577

Fig.10 Typical buck configuration with secondary sensing.

1999 Dec 07 15
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

handbook, full pagewidth Vmains

Vo

Co

output on/off
mode switch
OOB Vi
14 1
S1
DEM HVS
13 2

n.c. n.c.
12 3
power
GND DRIVER MOSFET
11 TEA1504 4

n.c. Isense
10 5

CTRL Vaux
9 6

REF DS
8 7

RDEM CCTRL RREF Caux Rsense

MGS578

Fig.11 Typical buck configuration with primary sensing.

1999 Dec 07 16
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

PACKAGE OUTLINE

DIP14: plastic dual in-line package; 14 leads (300 mil) SOT27-1

D ME
seating plane

A2 A

L A1

c
Z e w M
b1
(e 1)
b
14 8 MH

pin 1 index
E

1 7

0 5 10 mm
scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT
A A1 A2
b b1 c D (1) E (1) e e1 L ME MH w Z (1)
max. min. max. max.
1.73 0.53 0.36 19.50 6.48 3.60 8.25 10.0
mm 4.2 0.51 3.2 2.54 7.62 0.254 2.2
1.13 0.38 0.23 18.55 6.20 3.05 7.80 8.3
0.068 0.021 0.014 0.77 0.26 0.14 0.32 0.39
inches 0.17 0.020 0.13 0.10 0.30 0.01 0.087
0.044 0.015 0.009 0.73 0.24 0.12 0.31 0.33

Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

92-11-17
SOT27-1 050G04 MO-001AA
95-03-11

1999 Dec 07 17
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

SOLDERING The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the
Introduction to soldering through-hole mount
specified maximum storage temperature (Tstg(max)). If the
packages
printed-circuit board has been pre-heated, forced cooling
This text gives a brief insight to wave, dip and manual may be necessary immediately after soldering to keep the
soldering. A more in-depth account of soldering ICs can be temperature within the permissible limit.
found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011). Manual soldering
Wave soldering is the preferred method for mounting of Apply the soldering iron (24 V or less) to the lead(s) of the
through-hole mount IC packages on a printed-circuit package, either below the seating plane or not more than
board. 2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
Soldering by dipping or by solder wave 10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
The total contact time of successive solder waves must not
exceed 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

SOLDERING METHOD
PACKAGE
DIPPING WAVE
DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

1999 Dec 07 18
Philips Semiconductors Preliminary specification

GreenChip SMPS control IC TEA1504

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Dec 07 19
Philips Semiconductors – a worldwide company
Argentina: see South America Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +31 40 27 82785, Fax. +31 40 27 88399
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +64 9 849 4160, Fax. +64 9 849 7811
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Norway: Box 1, Manglerud 0612, OSLO,
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, Tel. +47 22 74 8000, Fax. +47 22 74 8341
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Pakistan: see Singapore
Belgium: see The Netherlands Philippines: Philips Semiconductors Philippines Inc.,
Brazil: see South America 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA, Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +359 2 68 9211, Fax. +359 2 68 9102 Tel. +48 22 5710 000, Fax. +48 22 5710 001
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Portugal: see Spain
Tel. +1 800 234 7381, Fax. +1 800 943 0087 Romania: see Italy
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +7 095 755 6918, Fax. +7 095 755 6919
Tel. +852 2319 7888, Fax. +852 2319 7700 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America Tel. +65 350 2538, Fax. +65 251 6500
Czech Republic: see Austria Slovakia: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Slovenia: see Italy
Tel. +45 33 29 3333, Fax. +45 33 29 3905 South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
Finland: Sinikalliontie 3, FIN-02630 ESPOO, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +358 9 615 800, Fax. +358 9 6158 0920 Tel. +27 11 471 5401, Fax. +27 11 471 5398
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, South America: Al. Vicente Pinzon, 173, 6th floor,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 04547-130 SÃO PAULO, SP, Brazil,
Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +55 11 821 2333, Fax. +55 11 821 2382
Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Spain: Balmes 22, 08007 BARCELONA,
Hungary: see Austria Tel. +34 93 301 6312, Fax. +34 93 301 4107
India: Philips INDIA Ltd, Band Box Building, 2nd floor, Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Tel. +91 22 493 8541, Fax. +91 22 493 0966 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Indonesia: PT Philips Development Corporation, Semiconductors Division, Tel. +41 1 488 2741 Fax. +41 1 488 3263
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14, Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
Tel. +353 1 7640 000, Fax. +353 1 7640 200 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, Tel. +66 2 745 4090, Fax. +66 2 398 0793
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Tel. +39 039 203 6838, Fax +39 039 203 6800 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
Tel. +82 2 709 1412, Fax. +82 2 709 1415 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +1 800 234 7381, Fax. +1 800 943 0087
Tel. +60 3 750 5214, Fax. +60 3 757 4880 Uruguay: see South America
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Vietnam: see Singapore
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors, Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

© Philips Electronics N.V. 1999 SCA 68

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 295002/02/pp20 Date of release: 1999 Dec 07 Document order number: 9397 750 05331
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.