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    Isc KTC4370A: Isc Silicon NPN Power Transistor

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    Erroz Rosadi
    This document provides product specifications for the KTC4370A silicon NPN power transistor from INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 180V minimum, a collector current rating of 1.5A, and a DC current gain range of 70-240. The transistor is designed for high voltage applications up to 180V.

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    Isc KTC4370A: Isc Silicon NPN Power Transistor

    Uploaded by

    Erroz Rosadi
    53 views2 pages
    This document provides product specifications for the KTC4370A silicon NPN power transistor from INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 180V minimum, a collector current rating of 1.5A, and a DC current gain range of 70-240. The transistor is designed for high voltage applications up to 180V.

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    uji coba

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    datasheet (25)

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    This document provides product specifications for the KTC4370A silicon NPN power transistor from INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 180V minimum, a collector current rating of 1.5A, and a DC current gain range of 70-240. The transistor is designed for high voltage applications up to 180V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    53 views2 pages

    Isc KTC4370A: Isc Silicon NPN Power Transistor

    Uploaded by

    Erroz Rosadi
    This document provides product specifications for the KTC4370A silicon NPN power transistor from INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 180V minimum, a collector current rating of 1.5A, and a DC current gain range of 70-240. The transistor is designed for high voltage applications up to 180V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor KTC4370A

    DESCRIPTION
    ·High Collector-Emitter Breakdown Voltage
    VCEO= 180V(Min)
    ·Complement to Type KTA1659A

    APPLICATIONS
    ·Designed for high voltage applications

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 180 V

    VCEO Collector-Emitter Voltage 180 V

    VEBO Emitter-Base Voltage 5.0 V

    IC(DC) Collector Current(DC) 1.5 A

    IB(DC) Base Current 0.15 A

    Collector Power Dissipation


    PC 20 W
    @TC=25℃

    TJ Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark


    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor KTC4370A

    ELECTRICAL CHARACTERISTICS
    Tj=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 180 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V

    VBE(on) Base-Emitter On Voltage IC= 500mA; VCE= 5V 1.0 V

    ICBO Collector Cutoff Current VCB= 180V; IE= 0 1.0 μA

    IEBO Emitter Cutoff Current VEB= 5V; IC=0 1.0 μA

    hFE DC Current Gain IC= 100mA; VCE= 5V 70 240

    COB Output Capacitance IE= 0; VCB= 10V;f= 1.0MHz 25 pF

    fT Current-Gain—Bandwidth Product IC= 100m A ; VCE= 10V 100 MHz

     hFE Classifications

    O Y

    70-140 120-240

    isc website： www.iscsemi.com 2 isc & iscsemi is registered trademark

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