Simulation of Photovoltaic Array Using Matlab / Simulink: Analysis, Comparison & Results
Simulation of Photovoltaic Array Using Matlab / Simulink: Analysis, Comparison & Results
Simulation of Photovoltaic Array Using Matlab / Simulink: Analysis, Comparison & Results
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escapes from its normal position associated with cells are the only found at commercial scale at
its atom, leaving a localized "hole" behind [3]. present era.
When those mobile charge carriers reach the Silicon PV cells are composed of a thin layer
vicinity of the depletion zone, the electric field of bulk Si or a thin Si film connected to electric
sweeps the holes into the p-side and pushes the terminals. One of the sides of the Si layer is
electrons into the n-side, creating a doped to form the P–n junction. A thin metallic
photo-generated drift current. Thus, the p-side grid is placed on the Sun-facing surface of
accumulates holes and the n-side accumulates the semiconductor. Fig. 3 illustrates the physical
electrons Fig. 2 which creates a voltage that can structure of PV cell [1], [2].
be used to deliver the photo-generated current to
D. P V Cell Working
a load. At the same time, the voltage built up
through the photovoltaic effect shrinks the size Photons of light with energy higher than
of the depletion region of the p-n junction diode the band-gap energy of PV material can make
resulting in an increased diffusion current electrons in the material break free from atoms
through the depletion zone. that hold them and create hole- electron pairs, as
shown in Fig. 2.
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3. Open circuit point, where the current is B. Effect of Change in irradiation on I-V
zero and the voltage has its maximum (open Characteristics of the PV Array
circuit voltage Voc). In Fig. 7 when the irradiation increases, the
The power delivered by a PV cell attains a current increases more than the voltage and the
maximum value at the points (Imp, Vmp). The power at maximum power point Pmpp increases
classical points are shown in Fig. 5 and are as well.
usually given as part of a manufacturer's data
sheet for a PV module.
Another important parameter of the PV
characteristics is called the Fill Factor (FF) Fig.
6. It is a term that describes how the curve fills
the rectangle that is defined by (Voc) and (Isc). It
gives an indication of the quality of a cell's
semiconductor junction and measures of how
well a solar cell is able to collect the carriers
generated by light. It is defined as: [4]
Fig. 7 I-V Characteristics of the PV as functions
of irradiation
C. Effect of Change in Temperature on I-V
Characteristics of the PV Array
Fig. 8 shows the variation of the current with
the temperature, the current changes less than the
voltage. Thus, a dynamic point exists on the I-V
curve at MPP. The entire PV system has to
execute at its maximum output power as shown
Fig. 5 IV Characteristics of PV in Fig. 9 [13]. The location of the power point
FF = VmppImpp / VocIoc (2) maximal is unknown, for that reason we use
After a simple manipulation the following calculation models and search algorithms
equation is attained. methods to sustain the PV array functioning spot
VocIoc FF = VmppImpp = Pmax (3) at the MPP.
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Fig. 9 I-V Curves, P-V Curve with the MPP Imp : current at maximum power point
V. PV CELL MODEL The solar cell is model first, then extends the
PV cell is a semiconductor p-n intersection model to a PV module, and finally models the
that transforms sunlight to electrical power. To PV array. From fig. 10, the output current of the
model a solar cell, it is imperative that we assess PV cell is [11], [15].
the effect of different factors on the solar panels
and to consider the characteristics given by (4)
the manufacturers in the datasheet. It is to be Where
noted that to form a PV module, a set of cells are Iph : photon produced by the cell
connected in series or in parallel. Thus, the Id : diode current
mathematical models for PV array are attained
while utilizing the basic description equivalent By Shockley equation, the diode current Id is
circuit of the PV cells [4], [9]. given by
A PV cell is usually embodied by an electrical
equivalent of one-diode; series resistance (Rs)
(5)
and parallel resistance (Rp) is shown in Fig. 10.
Where
The different parameters characteristics of the
Io : reverse saturation current of diode
PV cells are:
q : elementary electron charge
-19
(1.602x10 C)
Iph : currents generated by the solar cells
Vd : diode voltage
(A)
k : Boltzmann constant 1.381x10-23
Rs : resistance in series (Ω)
(J/K)
Rp : resistance in parallel (Ω)
T : temperature in Kelvin (K)
Ga : irradiance from the sunlight (W/m2)
The relation between voltage and current result
Tc : cell temperature (K)
by replacing the diode current
Id : diode current (A)
I : output current of the PV (A)
I = Iph - Id (6)
V : output voltage of the PV (V)
Manufacturer of the solar module gives other
Current equal to zero calculating at temperature
parameters needed to model the solar cells. The
T1. [4] Where Vd is the output voltage of the PV
datasheet which gives the electrical
cell. The reverse saturation Io is found by using
characteristics is calculated under standard test
the above equation. By setting the current
condition STC when the temperature T is 25°C
and the irradiance G is 1000 W/m2.
(7)
The current generated by the solar cells Iph can
be approximated with the short circuit current Isc
in [4]. The current generated can be calculated
for other irradiance. The standard current,
temperature and irradiance from the datasheet
are used to determine the current at different
condition [11].
(8)
Fig. 10 Equivalent circuit of solar cell with one (9)
diode
The parameters that can be found inside the Where
datasheet are Isc(T1) : current at temperature T1
Voc : open circuit voltage (V) T1 nom : the temp. of cell from datasheet
Isc : short-circuit current (A) at STC
Pmp : power at maximum power point Gnom : irradiance from datasheet at
Vmp : voltage at maximum power point STC
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After calculation [5], gives the equation of the Open circuit voltage 44.2
PV Voc
Current at maximum 4.75
power point IMPP
(10)
Voltage at maximum 35.8
Where a, is the diode quality factor power point VMPP
between 0 and 1 and must be estimated. The Number of cells in 72
value of “a” is equal to 1 for ideal diode. V is the series Ns
cell voltage. For a PV module, the cell voltage is
multiplied by the total amount of the cells found Temperature (0.065±0.015)%/oc
within the series. The reverse saturation current coefficient of Isc
Io depends on the temperature T. It is calculated
by the following equation [1]. Temperature - (160±20)mV/oc
coefficient of Voc
(11)
Different models of the photovoltaic are
The value of resistance in series Rs is developed in so many literatures. The following
quantified from the slope dv/di of the I- V curve equation developed in [6] will be used mainly in
at the point open circuit voltage [7]. The this report. The model consists of finding the
equation Rs is given by curve characteristic of the PV module from the
datasheet.
The goal is to find the values of Rs and Rp that
(12) makes the mathematical P-V curve coincide with
The model is completed by using the the experimental peak power at the (Vmp, Imp )
following recursive equations to find the point. The value of Rs and Rp are reached when
currents [4]. The recursive equation is used to the iteration stopped for Pmax calculated is equal
calculate the current for a PV cell. It is more to Pmax estimated.
convenient to solve numerically. The equation The circuit model of the PV module is shown in
introduces a simplified method to calculate Fig. 11. It is a controlled current source with the
resistance in series and neglect the resistance in equivalent resistors and the equation of the
parallel [15]. model above. The variation of the power being
taken by the load varies the PV voltage.
(13)
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