DG444, DG445

Data Sheet June 1999 File Number 3586.5

Monolithic, Quad SPST, CMOS Analog Features

Switches • ON Resistance (Max) . . . . . . . . . . . . . . . . . . . . . . . . . 85Ω
The DG444 and DG445 monolithic CMOS analog switches
• Low Power Consumption (PD) . . . . . . . . . . . . . . . . <35µW
are drop-in replacements for the popular DG211 and DG212
series devices. They include four independent single pole • Fast Switching Action
single throw (SPST) analog switches and TTL and CMOS - tON (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns
compatible digital inputs. - tOFF (Max, DG444) . . . . . . . . . . . . . . . . . . . . . . . 140ns
These switches feature lower analog ON resistance (<85Ω) • Low Charge Injection
and faster switch time (tON <250ns) compared to the DG211 • Upgrade from DG211/DG212
and DG212. Charge injection has been reduced, simplifying
sample and hold applications. • TTL, CMOS Compatible

The improvements in the DG444 series are made possible • Single or Split Supply Operation
by using a high voltage silicon-gate process. An epitaxial
layer prevents the latch-up associated with older CMOS Applications
technologies. The 44V maximum voltage range permits • Audio Switching
controlling ±20V signals when operating with ±20V power
supplies. • Battery Operated Systems
• Data Acquisition
The four switches are bilateral, equally matched for AC or
bidirectional signals. The ON resistance variation with • Hi-Rel Systems
analog signals is quite low over a ±5V analog input range.
• Sample and Hold Circuits
The switches in the DG444 and DG445 are identical,
differing only in the polarity of the selection logic. • Communication Systems
• Automatic Test Equipment
Pinout
DG444, DG445 (PDIP, SOIC) Ordering Information
TOP VIEW
TEMP.
PART NUMBER RANGE (oC) PACKAGE PKG. NO.
IN1 1 16 IN2
DG444DJ -40 to 85 16 Ld PDIP E16.3
D1 2 15 D2
DG444DY -40 to 85 16 Ld SOIC M16.15
S1 3 14 S2
DG445DJ -40 to 85 16 Ld PDIP E16.3
V- 4 13 V+
DG445DY -40 to 85 16 Ld SOIC M16.15
GND 5 12 VL

S4 6 11 S3

D4 7 10 D3

IN4 8 9 IN3

1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
 DG444, DG445

Functional Diagrams Pin Descriptions

DG444 DG445 PIN SYMBOL DESCRIPTION

S1 S1 1 IN1 Logic Control for Switch 1

IN1 IN1 2 D1 Drain (Output) Terminal for Switch 1
D1 D1
3 S1 Source (Input) Terminal for Switch 1
S2 S2
IN2 IN2 4 V- Negative Power Supply Terminal

D2 D2 5 GND Ground Terminal (Logic Common)

S3 S3
IN3 IN3 6 S4 Source (Input) Terminal for Switch 4

D3 D3 7 D4 Drain (Output) Terminal for Switch 4

S4 S4
8 IN4 Logic Control for Switch 4
IN4 IN4

D4 D4
9 IN3 Logic Control for Switch 3

10 D3 Drain (Output) Terminal for Switch 3

SWITCHES SHOWN FOR LOGIC “1” INPUT
11 S3 Source (Input) Terminal for Switch 3

12 VL Logic Reference Voltage.

TRUTH TABLE
13 V+ Positive Power Supply Terminal (Substrate)
LOGIC VIN DG444 DG445
14 S2 Source (Input) Terminal for Switch 2
0 ≤0.8V ON OFF
15 D2 Drain (Output) Terminal for Switch 2
1 ≥2.4V OFF ON
16 IN2 Logic Control for Switch 2

Schematic Diagram (One Channel)

V+

VL

V-

V+
INX

GND

V-

2
 DG444, DG445

Absolute Maximum Ratings Thermal Information

V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V Thermal Resistance (Typical, Note 2) θJA (oC/W)
GND to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND - 0.3V) to (V+) + 0.3V SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Digital Inputs, VS , VD (Note 1). . . . . (V-) -2V to (V+) + 2V or 30mA, Maximum Junction Temperature (Plastic Packages) . . . . . . . 150oC
Whichever Occurs First Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30mA Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
Peak Current, S or D (Pulsed 1ms, 10% Duty Cycle Max) . . 100mA (SOIC - Lead Tips Only)

Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V (Max)
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8V (Max)
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4V (Min)
Input Rise and Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . ≤20ns

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Signals on SX , DX , or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
2. θJA is measured with the component mounted on an evaluation PC board in free air.

Electrical Specifications Test Conditions: V+ = +15V, V- = -15V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified

TEMP (NOTE 4) (NOTE 5) (NOTE 4)

PARAMETER TEST CONDITIONS (oC) MIN TYP MAX UNITS
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON RL = 1kΩ, CL = 35pF, VS = ±10V 25 - 120 250 ns
(Figure 1)
Turn-OFF Time, tOFF
DG444 25 - 110 140 ns
DG445 25 - 160 210 ns
Charge Injection, Q (Figure 2) CL = 1nF, VG = 0V, RG = 0Ω 25 - -1 - pC
OFF Isolation (Figure 4) RL = 50Ω, CL = 5pF, f = 1MHz 25 - 60 - dB
Crosstalk (Channel-to-Channel) 25 - -100 - dB
(Figure 3)
Source OFF Capacitance, CS(OFF) f = 1MHz, VANALOG = 0 (Figure 5) 25 - 4 - pF
Drain OFF Capacitance, CD(OFF) 25 - 4 - pF
Channel ON Capacitance, 25 - 16 - pF
CD(ON) + CS(ON)
DIGITAL INPUT CHARACTERISTICS
Input Current VIN Low, IIL VIN Under Test = 0.8V, Full -0.5 -0.00001 0.5 µA
All Others = 2.4V
Input Current VIN High, IIH VIN Under Test = 2.4V, Full -0.5 0.00001 0.5 µA
All Others = 0.8V
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG Full -15 - 15 V
Drain-Source ON Resistance, IS = 10mA, VD = ±8.5V, 25 - 50 85 Ω
rDS(ON) V+ = 13.5V, V- = -13.5V
Full - - 100 Ω
Source OFF Leakage Current, IS(OFF) V+ = 16.5V, V- = -16.5V, 25 -0.5 0.01 0.5 nA
VD = ±15.5V, VS = 15.5V
85 -5 - 5 nA

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 DG444, DG445

Electrical Specifications Test Conditions: V+ = +15V, V- = -15V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified (Continued)

TEMP (NOTE 4) (NOTE 5) (NOTE 4)

PARAMETER TEST CONDITIONS (oC) MIN TYP MAX UNITS
Drain OFF Leakage Current, V+ = 16.5V, V- = -16.5V, 25 -0.5 0.01 0.5 nA
ID(OFF) VD = ±15.5V, VS = 15.5V
85 -5 - 5 nA
Channel ON Leakage Current, V+ = 16.5V, V- = -16.5V, 25 -0.5 0.08 0.5 nA
ID(ON) + IS(ON) VS = VD , = ±15.5V
85 -10 - 10 nA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+ V+ = 16.5V, V- = -16.5V, 25 - 0.001 1 µA
VIN = 0V or 5V
85 - - 5 µA
Negative Supply Current, I- 25 -1 -0.0001 - µA
85 -5 - - µA
Logic Supply Current, IL 25 - 0.001 1 µA
85 - - 5 µA
Ground Current, IGND 25 -1 -0.001 - µA
85 -5 - - µA

Electrical Specifications (Single Supply) Test Conditions: V+ = 12V, V- = 0V, VL = 5V, VIN = 2.4V, 0.8V (Note 3),
Unless Otherwise Specified

TEMP (NOTE 4) (NOTE 5) (NOTE 4)

PARAMETER TEST CONDITIONS (oC) MIN TYP MAX UNITS

DYNAMIC CHARACTERISTICS

Turn-ON Time, tON RL = 1kΩ, CL = 35pF, VS = 8V 25 - 300 450 ns

(Figure 1)
Turn-OFF Time, tOFF 25 - 60 200 ns

Charge Injection, Q (Figure 2) CL = 1nF, VG = 6V, RG = 0Ω 25 - 2 - pC

ANALOG SWITCH CHARACTERISTICS

Analog Signal Range, VANALOG Full 0 - 12 V

Drain-Source ON Resistance, rDS(ON) IS = -10mA, VD = 3V, 8V 25 - 100 160 Ω

V+ = 10.8V, VL = 5.25V
Full - - 200 Ω

POWER SUPPLY CHARACTERISTICS

Positive Supply Current, I+ V+ = 13.2V, VIN = 0V or 5V, 25 - 0.001 1 µA
VL = 5.25V
Full - - 5 µA

Negative Supply Current, I- 25 -1 -0.0001 - µA

Full -5 - - µA

Logic Supply Current, IL 25 - 0.001 1 µA

Full - - 5 µA

Ground Current, IGND 25 -1 -0.001 - µA

Full -5 - - µA

NOTES:
3. VIN = input voltage to perform proper function.
4. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
5. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

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 DG444, DG445

Test Circuits and Waveforms

VO is the steady state output with the switch on. Feedthrough via switch capacitance may result in spikes at the leading and trailing
edge of the output waveform.

VL V+
3V tr < 20ns
LOGIC tf < 20ns
50% D1
INPUT SWITCH S1 VO
0V INPUT
tOFF IN1

SWITCH RL CL
INPUT VS LOGIC
INPUT
VO 3V
80% 80% GND
SWITCH V-
OUTPUT 0V
Repeat test for Channels 2, 3 and 4.
tON For load conditions, see Specifications. CL includes fixture and
stray capacitance.
NOTE: Logic input waveform is inverted for switches that have RL
V O = V S ------------------------------------
the opposite logic sense. R L + r DS ( ON )

FIGURE 1A. MEASUREMENT POINTS FIGURE 1B. TEST CIRCUIT

FIGURE 1. SWITCHING TIMES

VL V+
SWITCH ∆VO
OUTPUT RG D1
VO

INX
OFF ON OFF
(DG444) VG
CL

V-
VIN = 3V
INX ON
(DG445) OFF Q = ∆VO x CL OFF
GND

FIGURE 2A. MEASUREMENT POINTS FIGURE 2B. TEST CIRCUIT

FIGURE 2. CHARGE INJECTION

+15V +15V
V+
C C V+

SIGNAL SIGNAL
GENERATOR 10dBm VS VD 50Ω GENERATOR 10dBm VS

INX 0V, 2.4V

0V, 2.4V IN1 IN2 0V, 2.4V

VD
VD ANALYZER
ANALYZER NC
C
RL C RL V-
V- GND
GND

-15V -15V

FIGURE 3. CROSSTALK TEST CIRCUIT FIGURE 4. OFF ISOLATION TEST CIRCUIT

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 DG444, DG445

Test Circuits and Waveforms (Continued)

+15V
C V+

VS

INX 0V, 2.4V

IMPEDANCE
ANALYZER

VD
f = 1MHz

C
V-
GND
-15V

FIGURE 5. SOURCE/DRAIN CAPACITANCES TEST CIRCUIT

Application Information

+15V
FET INPUT
OP AMP 3 7
VIN + 6
2 VOUT +5V +15V
- 4
+5V +15V
-15V VL V+
12 13 +15V
1/ DG444
VL V+ 4 +15V
2 3
+5V VOUT
GAIN1 1 0V
R1 VIN
AV = 1 90kΩ 0V 10kΩ
15 14
GND V-
GAIN2 16 R2
AV = 10
5kΩ
10 11

GAIN3 9 R3 FIGURE 7. LEVEL SHIFTER

AV = 20 4kΩ
7 6

GAIN4 8 R4
AV = 100 1kΩ
DG444 OR DG445
V- GND
4 5
-15V

GAIN ERROR IS DETERMINED ONLY BY

THE RESISTOR TOLERANCE, OP AMP OFFSET
AND CMRR WILL LIMIT ACCURACY OF CIRCUIT

V OUT R1 + R2 + R3 + R4
---------------- = ------------------------------------------------- = 100
V IN R4

WITH SW4 CLOSED

FIGURE 6. PRECISION WEIGHTED RESISTOR

PROGRAMMABLE GAIN AMPLIFIER

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 DG444, DG445

Typical Performance Curves

105

104
4

103

IL , I+, I-, IGND (nA)

I+, IGND
3 102
VIN (V)

10
VL = 7V -(I-)
2
1

VL = 5V 0.1
1
0.01 IL
0.001
0
0 4 8 12 16 20 -55 0 50 100 125
SUPPLY VOLTAGE (±V) TEMPERATURE (oC)

FIGURE 8. SWITCHING THRESHOLD vs SUPPLY VOLTAGE FIGURE 9. SUPPLY CURRENT vs TEMPERATURE

105 80
V+ = +15V
V- = -15V
70
104
60
103
50
85oC
rDS(ON) (Ω)
IIN (pA)

102 40
25oC

30
10
0oC
20
-40oC
1
10

0.1 0
-55 0 50 100 125 -15 0 15
TEMPERATURE (oC) VD (V)

FIGURE 10. INPUT CURRENT vs TEMPERATURE FIGURE 11. rDS(ON) vs VD AND TEMPERATURE

140 50
V+ = +15V
40 V- = -15V
120 CROSSTALK

30
100
20
80
Q (pC)
(dB)

10
OFF ISOLATION CL = 10nF
60
CL = 1nF
0
40
-10
V+ = +15V
20 V- = -15V -20
PGEN = 10dBm
0 -30
100 1K 10K 100K 1M 10M -10 0 10
VS (V)
FREQUENCY (Hz)

FIGURE 12. CROSSTALK REJECTION AND OFF ISOLATION FIGURE 13. CHARGE INJECTION vs SOURCE VOLTAGE
vs FREQUENCY

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 DG444, DG445

Typical Performance Curves (Continued)

25 20
V+ = +15V
V- = -15V IS(OFF) , ID(OFF)
0
20

CS(ON) + CD(ON) -20

CS , D (pF)

15

IS , ID (pA)
-40 IS(ON) + ID(ON)
10
-60
CS(OFF) , CD(OFF) V+ = +15V
5 V- = -15V
-80 FOR I(OFF) , VD = -VS

0 -100
-15 -10 -5 0 5 10 15 -15 -10 -5 0 5 10 15
VA (V) VS , VD (V)

FIGURE 14. SOURCE/DRAIN CAPACITANCE vs ANALOG FIGURE 15. LEAKAGE CURRENTS vs ANALOG VOLTAGE
VOLTAGE

150
160 V+ = +15V, V- = -15V
VL = 5V
V+ = +15V
V- = -15V
140
tON

120 100
tON
tON, tOFF (ns)
tON, tOFF (ns)

100
tOFF
80
50
60 tOFF

40

20 0
2 3 4 5 2 3 4 5
VIN (V) VIN (V)

FIGURE 16. SWITCHING TIME vs INPUT VOLTAGE (DG444) FIGURE 17. SWITCHING TIME vs INPUT VOLTAGE (DG445)
160 160
VL = 5V

140 140
tOFF
tON
120 120
tON, tOFF (ns)

tON, tOFF (ns)

100 100

80 80 tON

60 60
tOFF

40 40

20 20
10 12 14 16 18 20 22 10 12 14 16 18 20 22
SUPPLY VOLTAGE (±V) SUPPLY VOLTAGE (±V)

FIGURE 18. SWITCHING TIME vs POWER SUPPLY VOLTAGE FIGURE 19. SWITCHING TIME vs POWER SUPPLY VOLTAGE
(DG444) (DG445)

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 DG444, DG445

Typical Performance Curves (Continued)

400
500
V+ = +12V, V- = 0V V- = 0V, VL = 5V
VL = 5V
tON

400
300

tON (444)
tON, tOFF (ns)

tON, tOFF (ns)

300

200 tON (445)

200

100
tOFF 100 tOFF (445)
tOFF (444)

0 0
2 3 4 5 8 10 12 14 16 18 20 22
VIN (V) POSITIVE SUPPLY (V)

FIGURE 20. SWITCHING TIME vs INPUT VOLTAGE (DG444) FIGURE 21. SWITCHING TIMES vs SINGLE SUPPLY VOLTAGE
(SINGLE 12V SUPPLY)

30 10
V+ = 12V
V- = 0V
IS(OFF) , ID(OFF)
0
20

-10
IS , ID (pA)
Q (pC)

10

CL = 10nF -20
CL = 1nF IS(ON) + ID(ON)
0 V+ = +12V
-30 V- = 0V
FOR ID , VS = 0
FOR IS, VD = 0

-10 -40
0 4 8 0 6 12
VS (V) VS , VD (V)

FIGURE 22. CHARGE INJECTION vs SOURCE VOLTAGE FIGURE 23. SOURCE/DRAIN LEAKAGE CURRENTS (SINGLE
(SINGLE 12V SUPPLY) 12V SUPPLY)

20
V+ = +12V
V- = 0V
CS(ON) + CD(ON)
15
CS , D (pF)

10

CS(OFF) , CD(OFF)
5

0
0 6 12
VA (V)

FIGURE 24. SOURCE/DRAIN CAPACITANCE vs ANALOG VOLTAGE (SINGLE 12V SUPPLY)

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 DG444, DG445

Die Characteristics
DIE DIMENSIONS: PASSIVATION:
2160µm x 1760µm x 485 Type: Nitride
Thickness: 8kÅ ±1kÅ
METALLIZATION:
Type: SiAl WORST CASE CURRENT DENSITY:
Thickness: 12kÅ ±1kÅ 9.1 x 104 A/cm2

Metallization Mask Layout

DG444, DG445

D1 IN1 IN2
(2) (1) (16)

(15) D2

S1 (3) (14) S2

(13) V+ SUBSTRATE
V- (4)

GND (5) (12) VL

S4 (6) (11) S3

(7) (8) (9) (10)

D4 IN4 IN3 D3

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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