Schottky Rectifier 1 Amp: I 1 Amp V 40V
Schottky Rectifier 1 Amp: I 1 Amp V 40V
Schottky Rectifier 1 Amp: I 1 Amp V 40V
G 07/04
10BQ040
SCHOTTKY RECTIFIER 1 Amp
IF(AV) = 1 Amp
VR = 40V
TJ range - 55 to 150 °C
Case Styles
10BQ040
SMB
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10BQ040
Bulletin PD-2.397 rev. G 07/04
Voltage Ratings
Part number 10BQ040
VR Max. DC Reverse Voltage (V)
40
VRWM Max. Working Peak Reverse Voltage (V)
IFSM Max. Peak One Cycle Non-Repetitive 430 A 5µs Sine or 3µs Rect. pulse Following any rated
load condition and
Surge Current 45 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non- Repetitive Avalanche Energy 3.0 mJ TJ = 25 °C, IAS = 1A, L = 6mH
IAR Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters 10BQ Units Conditions
VFM Max. Forward Voltage Drop (1) 0.53 V @ 1A
TJ = 25 °C
* See Fig. 1 0.70 V @ 2A
0.49 V @ 1A
TJ = 125 °C
0.64 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.1 mA TJ = 25 °C
VR = rated VR
* See Fig. 2 4 mA TJ = 125 °C
CT Typical Junction Capacitance 80 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 10BQ Units Conditions
TJ Max. Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJL Max. Thermal Resistance Junction 36 °C/W DC operation
to Lead (**)
RthJA Max. Thermal Resistance Junction 80 °C/W
to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar DO-214AA
Device Marking IR1F
(*) dPtot 1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
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10BQ040
Bulletin PD-2.397 rev. G 07/04
10 10
Tj = 150˚C
125˚C
0.1 75˚C
Tj = 150˚C
50˚C
Tj = 125˚C 0.01
(A)
Tj = 25˚C 25˚C
0.001
F
Instantaneous Forward Current - I
0.0001
0 5 10 15 20 25 30 35 40
Reverse Voltage - VR (V)
1
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1000
T = 25˚C
J
Junction Capacitance - C T (p F)
100
0.1 10
0.2 0.4 0.6 0.8 1 0 10 20 30 40
Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
100
(°C/W)
D = 0.75
D = 0.50
thJC
10 D = 0.33
D = 0.25
Thermal Impedance Z
PDM
D = 0.20
t1
t2
1
Notes:
Single Pulse 1. Duty factor D = t1/ t2 .
(Thermal Resistance)
2. Peak Tj = Pdm x ZthJC + Tc .
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Leg)
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10BQ040
Bulletin PD-2.397 rev. G 07/04
160 0.8
D = 0.20 D = 0.20
Allowable Lead Temperature (°C)
Fig. 4 - Maximum Average Forward Current Fig. 5 - Maximum Average Forward Dissipation
Vs. Allowable Lead Temperature Vs. Average Forward Current
1000
(A) FSM
Non-Repetitive Surge Current - I
100
10
10 100 1000 10000
Square Wave Pulse Duration - Tp (Microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
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10BQ040
Bulletin PD-2.397 rev. G 07/04
Outline Table
Device Marking: IR1F CATHODE ANODE
2.15 (.085) 1 2
3.80 (.150)
1.80 (.071) 3.30 (.130)
0.30 (.012)
1.30 (.051) 0.15 (.006) 2.0 TYP.
0.76 (.030) 5.60 (.220) (.079 TYP.)
5.00 (.197)
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
IR1F
VOLTAGE
CURRENT
IR LOGO
YYWWX SITE ID
WEEK
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10BQ040
Bulletin PD-2.397 rev. G 07/04
Device Code
10 B Q 040 TR -
1 2 3 4 5 6
1 - Current Rating
2 - B = Single Lead Diode
3 - Q = Schottky Q Series
4 - Voltage Rating (040 = 40V)
5 - y none = Box (1000 pieces)
y TR = Tape & Reel (3000 pieces)
6 y none = Standard Production
y PbF = Lead-Free
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 07/04
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