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    6N60 Power Mosfet 6.2 Amps, 600/650 Volts N-Channel Mosfet: Description

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    Rogerio E. Santo
    The 6N60 is a high voltage n-channel MOSFET designed for fast switching applications. It has low on-resistance of 1.5 ohms, ultra-low gate charge of 20 nC, and fast switching times under 50 ns. The MOSFET provides 600V/650V breakdown voltage and can handle repetitive pulse loads up to 13 mJ and continuous currents up to 6.2 amps for improved power supply and adapter performance.

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    6N60 Power Mosfet 6.2 Amps, 600/650 Volts N-Channel Mosfet: Description

    Uploaded by

    Rogerio E. Santo
    81 views6 pages
    The 6N60 is a high voltage n-channel MOSFET designed for fast switching applications. It has low on-resistance of 1.5 ohms, ultra-low gate charge of 20 nC, and fast switching times under 50 ns. The MOSFET provides 600V/650V breakdown voltage and can handle repetitive pulse loads up to 13 mJ and continuous currents up to 6.2 amps for improved power supply and adapter performance.

    Original Description:

    Datasheet.

    Original Title

    6N60-ARTCHIP

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    The 6N60 is a high voltage n-channel MOSFET designed for fast switching applications. It has low on-resistance of 1.5 ohms, ultra-low gate charge of 20 nC, and fast switching times under 50 ns. The MOSFET provides 600V/650V breakdown voltage and can handle repetitive pulse loads up to 13 mJ and continuous currents up to 6.2 amps for improved power supply and adapter performance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    81 views6 pages

    6N60 Power Mosfet 6.2 Amps, 600/650 Volts N-Channel Mosfet: Description

    Uploaded by

    Rogerio E. Santo
    The 6N60 is a high voltage n-channel MOSFET designed for fast switching applications. It has low on-resistance of 1.5 ohms, ultra-low gate charge of 20 nC, and fast switching times under 50 ns. The MOSFET provides 600V/650V breakdown voltage and can handle repetitive pulse loads up to 13 mJ and continuous currents up to 6.2 amps for improved power supply and adapter performance.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    6N60

    Power Mosfet

    6.2 Amps, 600/650 Volts

    N-CHANNEL MOSFET
    DESCRIPTION
    The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
    low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed
    switching applications in switching power supplies and adaptors.

    FEATURES
    * RDS(ON) = 1.5Ω @VGS = 10V
    * Ultra low gate charge (typical 20 nC )
    * Low reverse transfer Capacitance ( CRSS = typical 10pF )
    * Fast switching capability
    * Avalanche energy tested
    * Improved dv/dt capability, high ruggedness

    SYMBOL

    *Pb-free plating product number: 6N60L

    ORDERING INFORMATION
    Ordering Number Package Pin Assignment Packing
    Normal Lead Free Plating 1 2 3
    6N60-x-TA3-T 6N60L-x-TA3-T TO-220 G D S Tube

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    6N60
    Power Mosfet

    ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)


    PARAMETER SYMBOL RATINGS UNIT
    Drain-Source Voltage 6N60-A VDSS 600 V
    6N60-B 650 V
    Gate-Source Voltage VGSS ±30 V
    Avalanche Current (Note 1) IAR 6.2 A
    Continuous Drain Current TC = 25°C ID 6.2 A
    TC = 100°C 3.9 A
    Pulsed Drain Current (Note 1) IDM 24.8 A
    Avalanche Energy Single Pulsed (Note 2) EAS 440 mJ
    Repetitive (Note 1) EAR 13 mJ
    Power Dissipation PD 62.5 W
    Junction Temperature TJ +150 °C
    Operating Temperature TOPR -55 ~ +150 °C
    Storage Temperature TSTG -55 ~ +150 °C
    Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
    Absolute maximum ratings are stress ratings only and functional device operation is not implied.
    THERMAL DATA
    PARAMETER SYMBOL RATING UNIT
    Junction-to-Ambient θJA 62 °C/W
    Junction-to-Case θJC 2 °C/W

    ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)


    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    OFF CHARACTERISTICS
    Drain-Source Breakdown Voltage 6N60-A BVDSS VGS = 0V, ID = 250µA 600 V
    6N60-B 650 V
    Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 µA
    Gate- Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA
    Reverse VGS = -30V, VDS = 0V -100 nA
    Breakdown Voltage Temperature △BVDSS/△TJ ID = 250 µA, Referenced to 0.53 V/°C
    Coefficient 25°C
    ON CHARACTERISTICS
    Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA 2.0 4.0 V
    Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 3.1A 1.5 Ω
    DYNAMIC CHARACTERISTICS
    Turn-On Delay Time tD(ON) VDD=300V, ID =6.2A, RG =25Ω 20 50 ns
    Turn-On Rise Time tR (Note 4, 5) 70 150 ns
    Turn-Off Delay Time tD(OFF) 40 90 ns
    Turn-Off Fall Time tF 45 100 ns
    Total Gate Charge QG VDS=480V, ID=6.2A, VGS=10 V 20 25 nC
    Gate-Source Charge QGS (Note 4, 5) 4.9 nC
    Gate-Drain Charge QGD 9.4 nC

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    6N60
    Power Mosfet

    ELECTRICAL CHARACTERISTICS
    PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
    DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
    Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 6.2 A 1.4 V
    Maximum Continuous Drain-Source Diode IS 6.2 A
    Forward Current
    Maximum Pulsed Drain-Source Diode ISM 24.8 A
    Forward Current
    Reverse Recovery Time tRR VGS = 0 V, IS = 6.2 A, 290 ns
    Reverse Recovery Charge QRR dIF/dt = 100 A/µs (Note 4) 2.35 ns
    1. Repetitive Rating : Pulse width limited by TJ
    2. L = 16.8mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
    3. ISD ≤ 6.2A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
    4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
    5. Essentially independent of operating temperature

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    6N60
    Power Mosfet

    TEST CIRCUITS AND WAVEFORMS

    Fig. 1A Peak Diode Recovery dv/dt Test Circuit

    Fig. 1B Peak Diode Recovery dv/dt Waveforms

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    6N60
    Power Mosfet

    TEST CIRCUITS AND WAVEFORMS (Cont.)

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    6N60
    Power Mosfet

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