Quiz 2 Electronics 1 12/2/09 20. In a diode, the capacitance measured in forward-bias region.

____________________________
Name: ________________________________________ Ans. diffusion or storage capacitance
21. The frequently used diode equivalent circuit is
1. The maximum reverse-bias potential that can be applied before ________________________.
entering the Zener region is called __________________________. Ans. ideal equivalent circuit
Ans. peak inverse voltage (PIV/PRV) 22. Determine the current through the silicon diode at 35 oC if Is is 29.1
2. The resistance introduced by the connection between the nA. ____________________
semiconductor material and the external metallic conductor is Ans 15.52 mA
_______________________________. 23. Determine the level of V TH of the germanium diode when the
Ans. contact resistance temperature is increased by 53 oC. ____________
3. The threshold voltage for germanium diode is Ans. 0.165 V
_________________________. 24. Determine the reverse saturation current in diode for a
Ans. 0.3 V
4. The inventor of integrated circuit is ______________________.
Germanium diode if its forward current is 0.25 mA at 30 C.°
Ans. Jack Kilby Ans. Is = 2.56 nA
5. It refers to the application of an external voltage across the two 25. At what temperature will the nominal voltage of the Zener diode
terminals of the device to extract a response. ______________ change from 4.5 V (at 300 K) to 4.62 V if the temperature coefficient
Ans. bias is 0.09%/oC?
6. The majority carrier for p-type material is ___________.
Ans. hole 26. If the photons emit at 5.2 eV, find the frequency of the light.
7. The current that exists under reverse-bias conditions is called Ans. f = 1.26 THz
_____________________. 27. If the maximum power dissipated by the diode is 800 mW, find the
Ans. reverse saturation current Zener voltage if the test current is 15 mA.
8. The sum of storage time and transition interval is known as Ans. Vz = 13.33 V
________________________. 28. Determine the level of VTH of the germanium diode when the
Ans. Reverse recovery time temperature decreased by 20 oC.
9. In specification sheets, this rating is defined by the maximum value Ans. VTH1 = 0.26 V
and time interval for very high currents though the device for very 29. Determine the current through the silicon diode at 95oC if Is is
brief intervals of time. __________________________________. 29.1 nA.
Ans. peak forward surge current Ans. 1.81 mA
10. The other term for diffusion capacitance is 30. The factor that tells the reduction of power handling capability of
__________________________________. the diode due to the increase of ambient temperature from room
Ans. storage capacitance temperature. ________.
11. If current is 2.75 mA, find the dynamic resistance. Ans. Power derating factor
___________________________. 31. It is the amount of time of creation and disappearance of a free
Ans. 9.45 ohms electron. _______
12. The reverse saturation current Is will just about quadruple in Ans. Lifetime
magnitude for every increase for every ______ oC increase in 32 Discuss the three operating conditions of a rectifier diode: no-bias,
temperature. forward-bias, and reverse bias (3 pts).
Ans. 20
13. The resistance of the semiconductor itself is known as
____________________.
Ans. body or bulk resistance
14. The region near the junction of a diode that has very few carriers
is called as __________________________.
Ans. depletion region
15. Light intensity is measured in what unit? _________________
Ans. candela
16. The process of giving off light by applying an electrical source of
energy is called _________________________.
Ans. electroluminescence
17. The diffused impurities with three valence electrons are called
_________________ atoms.
Ans. Acceptor or trivalent
18. A diode equivalent characterized by a threshold voltage and ideal
diode is called ____________________.
Ans. Simplified Equivalent Circuit
19. If the forward current through the Silicon diode is 12.657 mA, find
the power dissipated by the diode. ______________.
Ans. 8.86 mW
 28. The frequently used diode equivalent circuit is 27. An ___________________ is a combination of elements properly 27. The diffused impurities with three valence electrons are called
________________________. chosen to best represent the actual terminal characteristics of a _________________ atoms.
29. An ___________________ is a combination of elements properly device, system, or such in a particular operating region. 28. A diode equivalent characterized by a threshold voltage and ideal
chosen to best represent the actual terminal characteristics of a 28. DDM is one of equipment used in diode testing, DDM means diode is called ____________________.
device, system, or such in a particular operating region. ___________________________. 29. In a diode, the capacitance measured in forward-bias region.
30. DDM is one of equipment used in diode testing, DDM means 29. The inventor of integrated circuit is __________________. ____________________________
___________________________. 30. The resistance of the semiconductor itself is known as 30. The frequently used diode equivalent circuit is
Quiz 2 Electronics 1 12/2/09 Quiz 2 Electronics 1 12/2/09 ____________________. ________________________.
Quiz 2 Electronics 1 12/2/09 Quiz 2 Electronics 1 12/2/09
Name: ___________________________________________ Name: ___________________________________________
Name: ___________________________________________ Name: ___________________________________________
1. The maximum reverse-bias potential that can be applied before 1. Determine the current through the silicon diode at 35 oC if Is is
entering the Zener region is called 29.1 nA. ____________________ 1. The current that exists under reverse-bias conditions is called 1. If current is 2.75 mA, find the dynamic resistance. ________
_________________________. 2. The majority carrier for p-type material is ___________. _____________________. 2. DDM is one of equipment used in diode testing, DDM means
2. The threshold voltage for germanium diode is ____________. 3. The current that exists under reverse-bias conditions is called 2. The sum of storage time and transition interval is known as ___________________________.
3. The inventor of integrated circuit is __________________. _____________________. ________________________. 3. The threshold voltage for germanium diode is ____________.
4. Determine the current through the silicon diode at 35 oC if Is is 4. The sum of storage time and transition interval is known as 3. The other term for diffusion capacitance is _____________. 4. Determine the current through the silicon diode at 35 oC if Is is
29.1 nA. ____________________ ________________________. 4. If the forward current through the diode is 12.657 mA, find the 29.1 nA. ____________________
5. The PIV rating for silicon is _____________ V. 5. The other term for diffusion capacitance is _____________. power dissipated by the diode. ______________. 5. The PIV rating for silicon is _____________ V.
6. The characteristics of an ideal diode are those of a 6. If the forward current through the diode is 12.657 mA, find the 5. If the Ipeak is 1 A, find the average rectified current. _________ 6. The characteristics of an ideal diode are those of a
_____________ that can conduct current in one direction. power dissipated by the diode. ______________. 6. In specification sheets, this rating is defined by the maximum _____________ that can conduct current in one direction.
7. The majority carrier for p-type material is ___________. 7. In a diode, the capacitance measured in forward-bias region. value and time interval for very high currents though the device 7. The majority carrier for p-type material is ___________.
8. The current that exists under reverse-bias conditions is called ____________________________ for very brief intervals of time. 8. The current that exists under reverse-bias conditions is called
_____________________. 8. The frequently used diode equivalent circuit is __________________________________. _____________________.
9. The sum of storage time and transition interval is known as ________________________. 7. The resistance introduced by the connection between the 9. The sum of storage time and transition interval is known as
________________________. 9. If the Ipeak is 1 A, find the average rectified current. _________ semiconductor material and the external metallic conductor is ________________________.
10. The other term for diffusion capacitance is _____________. 10. In specification sheets, this rating is defined by the maximum _______________________________. 10. The other term for diffusion capacitance is _____________.
11. If the Ipeak is 1 A, find the average rectified current. _________ value and time interval for very high currents though the device 8. If current is 2.75 mA, find the dynamic resistance. ________ 11. An ___________________ is a combination of elements properly
12. In specification sheets, this rating is defined by the maximum for very brief intervals of time. 9. The PIV rating for silicon is _____________ V. chosen to best represent the actual terminal characteristics of a
value and time interval for very high currents though the device __________________________________. 10. The reverse saturation current Is will just about quadruple in device, system, or such in a particular operating region.
for very brief intervals of time. 11. The resistance introduced by the connection between the magnitude for every increase for every ______ oC increase in 12. If the Ipeak is 1 A, find the average rectified current. _________
__________________________________. semiconductor material and the external metallic conductor is temperature. 13. In specification sheets, this rating is defined by the maximum
13. The resistance introduced by the connection between the _______________________________. 11. Determine the level of V TH of the germanium diode when the value and time interval for very high currents though the device
semiconductor material and the external metallic conductor is 12. If current is 2.75 mA, find the dynamic resistance. ________ temperature increased by 53 oC. ____________ for very brief intervals of time.
_______________________________. 13. The reverse saturation current Is will just about quadruple in 12. The resistance of the semiconductor itself is known as __________________________________.
14. If current is 2.75 mA, find the dynamic resistance. ________ magnitude for every increase for every ______ oC increase in ____________________. 14. The resistance introduced by the connection between the
15. The reverse saturation current Is will just about quadruple in temperature. 13. The maximum reverse-bias potential that can be applied before semiconductor material and the external metallic conductor is
magnitude for every increase for every ______ oC increase in 14. The maximum reverse-bias potential that can be applied before entering the Zener region is called _______________________________.
temperature. entering the Zener region is called _________________________. 15. The inventor of integrated circuit is __________________.
16. the resistance of the semiconductor itself is known as _________________________. 14. The threshold voltage for germanium diode is ____________. 16. The reverse saturation current Is will just about quadruple in
____________________. 15. The threshold voltage for germanium diode is ____________. 15. The inventor of integrated circuit is __________________. magnitude for every increase for every ______ oC increase in
17. The region near the junction of a diode that has very few carriers 16. The region near the junction of a diode that has very few carriers 16. Determine the current through the silicon diode at 35 oC if Is is temperature.
is called as __________________________. is called as __________________________. 29.1 nA. ____________________ 17. the resistance of the semiconductor itself is known as
18. Light intensity is measured in what unit? _________________ 17. Light intensity is measured in what unit? _________________ 17. The characteristics of an ideal diode are those of a ____________________.
19. An equipment that displays the characteristics of a 18. An equipment that displays the characteristics of a _____________ that can conduct current in one direction. 18. The region near the junction of a diode that has very few carriers
semiconductor diode is called ____________________. semiconductor diode is called ____________________. 18. The majority carrier for p-type material is ___________. is called as __________________________.
20. The process of giving off light by applying an electrical source of 19. The process of giving off light by applying an electrical source of 19. The region near the junction of a diode that has very few carriers 19. Light intensity is measured in what unit? _________________
energy is called _________________________. energy is called _________________________. is called as __________________________. 20. An equipment that displays the characteristics of a
21. The term _______________ is a measure of the ability of a 20. The term _______________ is a measure of the ability of a 20. Light intensity is measured in what unit? _________________ semiconductor diode is called ____________________.
device to produce a desired effect. device to produce a desired effect. 21. An ___________________ is a combination of elements properly 21. The process of giving off light by applying an electrical source of
22. The lower maximum temperature rating of a germanium is 21. The lower maximum temperature rating of a germanium is chosen to best represent the actual terminal characteristics of a energy is called _________________________.
_______________ oC. _______________ oC. device, system, or such in a particular operating region. 22. The term _______________ is a measure of the ability of a
23. The diffused impurities with three valence electrons are called 22. The diffused impurities with three valence electrons are called 22. DDM is one of equipment used in diode testing, DDM means device to produce a desired effect.
_________________ atoms. _________________ atoms. ___________________________. 23. The lower maximum temperature rating of a germanium is
24. A diode equivalent characterized by a threshold voltage and ideal 23. A diode equivalent characterized by a threshold voltage and ideal 23. An equipment that displays the characteristics of a _______________ oC.
diode is called ____________________. diode is called ____________________. semiconductor diode is called ____________________. 24. The diffused impurities with three valence electrons are called
25. Determine the level of VTH of the germanium diode when the 24. Determine the level of VTH of the germanium diode when the 24. The process of giving off light by applying an electrical source of _________________ atoms.
temperature increased by 53 oC. ____________ temperature increased by 53 oC. ____________ energy is called _________________________. 25. A diode equivalent characterized by a threshold voltage and ideal
26. If the forward current through the diode is 12.657 mA, find the 25. The PIV rating for silicon is _____________ V. 25. The term _______________ is a measure of the ability of a diode is called ____________________.
power dissipated by the diode. ______________. 26. The characteristics of an ideal diode are those of a device to produce a desired effect. 26. Determine the level of V TH of the germanium diode when the
27. In a diode, the capacitance measured in forward-bias region. _____________ that can conduct current in one direction. 26. The lower maximum temperature rating of a germanium is temperature increased by 53 oC. ____________
____________________________ _______________ oC.
27. If the forward current through the diode is 12.657 mA, find the
power dissipated by the diode. ______________.
28. The maximum reverse-bias potential that can be applied before
entering the Zener region is called
_________________________.
29. In a diode, the capacitance measured in forward-bias region.
____________________________
30. The frequently used diode equivalent circuit is
________________________.