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Experiment No: 02
Name of the experiment:
The study of V-I characteristic of a diode using OrCad simulation software.
Objectives:
1. To see the V-I characteristics of a diode.
2. To find out the output curve of circuit.
3. To understand the difference between input and output curve.
Theory:
The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in
the below figure. The horizontal line in the below figure represents the amount
of voltage applied across the p-n junction diode whereas the vertical line represents the
amount of current flows in the p-n junction diode.Forward bias V-I characteristic of P-N
diode.When anode is positive with respect to cathode , diode is said to be forward biased.
with increase of the source voltage Vs from zero value , initially diode current is zero.
from Vs=0 to cut-in voltage , the forward current is very small .cut-in voltage is also known
as threshold voltage or turn-on voltage. beyond cut-in voltage ,the diode current rises rapidly
and diode said to conduct. for silicon diode, the cut-in voltage is around 0.7. when diode
conducts, there is a forward voltage drop of the order of 0.8 to 1V.Reverse bias V-I
characteristic of P-N diode.When cathode is positive with respect to anode the , the diode said
to be reverse biased. In the reverse biased condition. a small reverse current leakage current ,
of the order of uA or mA flow . the leakage current is almost independent of the reverse
voltage until this voltage reach breakdown voltage at this reverse breakdown, voltage remains
almost constant but reverse current becomes quite high limited only by the external circuit
resistance . a large reverse break down voltage associated with high reverse current, leads to
excessive power loss that may be destroy the diode.At point a reverse breakdown of the diode
occurs and current increase sharply damaging the diode . this point is called knee of the
reverse characteristics.Now the V-I Characteristic method of a diode shown Figure 2.1
Fig.2.1.Operation of V-I characteristic of a diode.
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Software:
OrCad simulation cs lite and PSpice.
Working Procedures:
1. First we open the software OrCad.
2. Now we have to find the important elements for the rectifier circuit like Source V, a diode
and a load resistor from the library section.
3. Now we complete the circuit for forward bias using wire and ground node and probes.
4. The complete circuit will look like fig.2.2.
Fig.2.3.Complete circuit for forward bias
5. Run the circuit using DC sweep and then we see the V-I curve for forward bias of diode.
6. Now we save the simulation and draw another circuit for the reverse bias of diode.
7. We complete circuit of reverse bias using wire and probes like fig.2.4 in below.
Fig.2.4.Complete reverse bias circuit
8. Now we run the two circuits using DC sweep and see the output curves.
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Result:
The V-I curve of diode for forward bias is shown below in fig.2.5:
Fig.2.5.Output curve of a diode when in forward bias
The V-I curve of diode for reversed bias is shown below in fig.2.6:
Fig.2.6.Output curve of a diode when in reversed bias
Res
Caution:
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1.We must make sure that the ground node is connected in the circuit.
2.Source must be in form of DC voltage.
3.We must make sure the diode is in biased properly.
4.We must take the probes accurately.
Discussion:
As diode has a barrier potential of 0.7V,it can not conduct any current when the bias range in
between 0V-0.7V.After increasing supply from 0.7V , current increases linearly with supply
voltage.In reverse bias,diode can not conduct any current.Although there is little amount of
current in forms of pA/uA due to the minority carriers in p-n junction.After a certain supply
of reverse voltage ,junction breaks down and a reverse current flows through the p-n junction
diode.
