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    Pedro Rodriguez
    This document provides specifications for the BSS65 PNP silicon planar high speed transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, and more. - Electrical characteristics including breakdown voltages, cut-off currents, saturation voltages, static forward current transfer ratio, transition frequency, and capacitances. - Switching times including turn-on and turn-off times. The document contains detailed technical specifications for the transistor to inform users of its electrical parameters and limitations.

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    L1 PDF

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    Pedro Rodriguez
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    This document provides specifications for the BSS65 PNP silicon planar high speed transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, and more. - Electrical characteristics including breakdown voltages, cut-off currents, saturation voltages, static forward current transfer ratio, transition frequency, and capacitances. - Switching times including turn-on and turn-off times. The document contains detailed technical specifications for the transistor to inform users of its electrical parameters and limitations.

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    This document provides specifications for the BSS65 PNP silicon planar high speed transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, and more. - Electrical characteristics including breakdown voltages, cut-off currents, saturation voltages, static forward current transfer ratio, transition frequency, and capacitances. - Switching times including turn-on and turn-off times. The document contains detailed technical specifications for the transistor to inform users of its electrical parameters and limitations.

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    © All Rights Reserved
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    26 views2 pages

    L1 PDF

    Uploaded by

    Pedro Rodriguez
    This document provides specifications for the BSS65 PNP silicon planar high speed transistor. Key details include: - Maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, and more. - Electrical characteristics including breakdown voltages, cut-off currents, saturation voltages, static forward current transfer ratio, transition frequency, and capacitances. - Switching times including turn-on and turn-off times. The document contains detailed technical specifications for the transistor to inform users of its electrical parameters and limitations.

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    SOT23 PNP SILICON PLANAR

    BSS65
    HIGH SPEED TRANSISTOR
    ISSUE 2 - SEPTEMBER 1995 ✪

    PARTMARKING DETAIL — BSS65 - L1


    BSS65R - L5 E
    C

    ABSOLUTE MAXIMUM RATINGS.


    PARAMETER SYMBOL VALUE UNIT
    Collector-Base Voltage VCBO -12 V
    Collector-Emitter Voltage VCEO -12 V
    Emitter-Base Voltage VEBO -4 V
    Peak Pulse Current ICM -200 mA
    Continuous Collector Current IC -100 mA
    Base Current IC -50 mA
    Power Dissipation at Tamb=25°C PTOT 330 mW
    Operating and Storage Temperature Range tj:tstg -55 to +150 °C
    ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
    PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
    BreakdownVoltages V(BR)CEO -12 V IC=-10mA
    V(BR)CBO -12 V IC=-10µ A *
    V(BR)EBO -4 V IE=-10µ A
    Cut-Off Currents ICBO -100 nA VCB=-6V, IE=0
    IEBO -100 nA VEB=-4V, IC=0
    Collector-Emitter VCE(sat) -0.15 V IC=-10mA, IB=-1mA
    Saturation Voltage -0.25 V IC=-30mA, IB=-3mA
    Base-Emitter VBE(sat) -0.75 -0.98 V IC=-10mA, IB=-1mA
    Saturation Voltage -0.82 -1.20 V IC=-30mA, IB=-3mA
    Static Forward Current hFE 30 IC=-10mA, VCE=-0.3V
    Transfer Ratio 40 150 IC=-30mA, VCE=-0.5V
    Transition Frequency fT 400 MHz IC=-30mA, VCE=-10V,
    f=100MHz
    Collector-Base Cobo 6 pF VCB=-5V, IE=0,
    Capacitance f=1MHz
    Emitter Base Capacitance Cebo 6 pF VEB=-0.5V, IC=0, f=1MHz
    Switching Times
    Turn-On Time ton 23 60 nS IC=-30mA
    Turn-Off Time toff 34 90 nS IB1 = -IB2= -1.5mA
    VCC=-10V

    PAGE NUMBER
    www.s-manuals.com

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