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Assignment 3: ECE209&EEE209 (Semiconductor Materials and Devices) Summer 2020

This document contains an assignment with 5 questions regarding semiconductor materials and devices. It involves calculating things like equilibrium carrier concentrations, excess carrier concentrations under steady state conditions, recombination rates of excess carriers over time, conductivity, drift current density, and percentage changes in conductivity for silicon samples under different conditions like doping, applied electric fields, and optical excitation. The questions require using equations to model semiconductor behavior and how properties change with doping, applied fields, excess carrier generation rates, lifetimes, and over time as excess carriers recombine after generation stops.

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REDWAN AHMED MIAZEE
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80 views

Assignment 3: ECE209&EEE209 (Semiconductor Materials and Devices) Summer 2020

This document contains an assignment with 5 questions regarding semiconductor materials and devices. It involves calculating things like equilibrium carrier concentrations, excess carrier concentrations under steady state conditions, recombination rates of excess carriers over time, conductivity, drift current density, and percentage changes in conductivity for silicon samples under different conditions like doping, applied electric fields, and optical excitation. The questions require using equations to model semiconductor behavior and how properties change with doping, applied fields, excess carrier generation rates, lifetimes, and over time as excess carriers recombine after generation stops.

Uploaded by

REDWAN AHMED MIAZEE
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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BRAC University

ECE209&EEE209 (Semiconductor Materials and Devices)


Summer 2020
_____________________________________________________________________________________________________________________

Assignment 3
1. Consider a sample of silicon at T = 300 K doped at an impurity concentration of Nd= 1017 cm-3.
a. Calculate the thermal equilibrium electron and hole concentrations. Determine the position
of the Fermi level EF with respect to the conduction band edge EC.
b. Now if due to an optical excitation, excess EHPs are generated at a rate of 1010 cm-3 per
microsecond and τn = τp = 1 microsecond under steady state condition, find
(i) the excess electron and hole concentrations ∆n and ∆p,
(ii) the net electron and hole concentrations n and p,
(iii) the positions of the quasi Fermi levels Fn and Fp with respect to the conduction
and valence band edges EC and EV, respectively, and
(iv) deviation of the quasi Fermi levels from the thermal equilibrium Fermi level EF.

2. Excess electrons have been generated in a semiconductor to a concentration of


δn(0 ) = 1015 cm -3 . The excess carrier lifetime is τn0 = 1 microsecond. The forcing function
generating the excess carriers turns off at t=0. Calculate the excess electron concentration for
(a) t = 0, (b) t = 1 µs, (c) t = 4 µs.

3. For problem 2, calculate the recombination rate of the excess electrons for (a) t = 0, (b) t = 1 µs,
(c) t = 4 µs.
4. Consider a bar of intrinsic Si semiconductor at T = 300 K with intrinsic carrier concentration ni =
1.0×1010 cm-3 , subject to an electric field of E = 1000 V/cm.
a) Calculate the conductivity of the silicon bar and the drift current density. Assume that
the electron and hole mobilities are 1350 and 480 cm2/V.s, respectively.
b) If the above semiconductor is exposed to light generating 1012 EHP/cm3 every
microsecond, find the excess electron (∆n) and hole (∆p) concentrations. Assume excess carrier
lifetime τn= τp=2 μsec.
c) For the above problem, calculate the photoconductivity and the corresponding drift
current density when exposed to light.
d) What is the percentage change in the conductivity when exposed to light?

5. a) In the above problem (Question 4), if the forcing function generating the excess carriers
turns off at t=0, calculate the excess electron concentration, conductivity and the drift current
density at t = 2 µs.
b) Calculate is the percentage change in the conductivity from t = 0 to t = 2 µs.

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