Electronic Devices

Final Term
Lecture - 03

Reference book:
Electronic Devices and Circuit Theory (Chapter-6)
Robert L. Boylestad and L. Nashelsky , (11th Edition)

Faculty of Engineering
American International University-Bangladesh
 OBJECTIVES

• Become familiar with the construction and operating characteristics of Junction Field
Effect (JFET), Metal-Oxide Semiconductor FET (MOSFET), and Metal-Semiconductor
FET (MESFET) transistors.

• Be able to sketch the transfer characteristics from the drain characteristics of a JFET,
MOSFET, and MESFET transistor.

• Understand the vast amount of information provided on the specification sheet for each
type of FET.

• Be aware of the differences between the dc analysis of the various types of FETs.

Faculty of Engineering
American International University-Bangladesh
FETs vs BJTs

• FET’s (Field – Effect Transistors) are much like BJT’s (Bipolar Junction Transistors).

• Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits
• Differences:
• FET’s are voltage controlled devices whereas BJT’s are current controlled devices.
• FET’s are unipolar devices whereas BJT’s are bipolar devices.
• FET’s also have a higher input impedance, but BJT’s have higher gains.
• FET’s are less sensitive to temperature variations and because of their construction they
are more easily integrated into IC’s.

Faculty of Engineering
American International University-Bangladesh
 FET TYPES

• JFET: Junction Field-Effect Transistor

• MOSFET: Metal-Oxide Semiconductor Field-Effect Transistor

»D-MOSFET ~ Depletion type MOSFET

»E-MOSFET ~ Enhancement type MOSFET

Faculty of Engineering
American International University-Bangladesh
 JFET CONSTRUCTION

• There are two types of JFETs

• n- channel
• p- channel

• The n-channel is more widely used.

• There are three terminals:

• Drain (D) and Source (S) are connected to n-channel
• Gate (G) is connected to the p-type material
• Check this: http://www-g.eng.cam.ac.uk/mmg/teaching/linearcircuits/jfet.html

Faculty of Engineering
American International University-Bangladesh
BASIC OPERATION OF JFET

• JFET operation can be compared to a water spigot.

• The source of water pressure is the accumulation of

electrons at the negative pole of the drain-source voltage.

• The drain of the water is the electron deficiency (or holes)

at the positive pole of the applied voltage.

• The control of flow of water is the gate voltage that

controls the width of the n channel and therefore, the flow
of charges from source to drain.

Faculty of Engineering
American International University-Bangladesh
 JFET OPERATING CHARACTERISTICS
• There are three basic operating conditions for a JFET:

A. VGS = 0, VDS increasing to some positive value

B. VGS < 0, VDS at some positive value

C. Voltage-Controlled Resistor

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American International University-Bangladesh
 JFET OPERATING CHARACTERISTICS: VGS = 0 V
• Three things happen when VGS = 0 and VDS is increased
from 0 to a more positive voltage:
• The depletion region between p-gate and n-channel
increases as electrons from n-channel combine with
holes from p-gate.

• Increasing the depletion region, decreases the size of

the n-channel which increases the resistance of the n-
channel.

• But even though the n-channel resistance is

increasing, the current (ID) from Source to Drain
through the n-channel is increasing. This is because
VDS is increasing.

Faculty of Engineering
American International University-Bangladesh
 JFET OPERATING CHARACTERISTICS: VGS = 0 V
• It is important to note that the depletion region is wider near the
top of both p-type Materials.

• Assuming a uniform resistance in the n-channel, the resistance of the

channel can be broken down to the divisions appearing in Figure.

• The current ID will establish the voltage levels through the

channel as indicated on the same figure. The result is that the upper
region of the p-type material will be reverse biased by about 1.5 V,
with the lower region only reverse-biased by 0.5 V.

• The greater the applied reverse bias, the wider the depletion
region—hence the distribution of the depletion region as shown in
figure. The fact that the p-n junction is reverse-biased for the
length of the channel results in a gate current of zero amperes.

Faculty of Engineering
American International University-Bangladesh
 PINCH-OFF

• If VGS = 0 and VDS is further increased to a more

positive voltage, then the depletion zone gets so
large that it pinches off the n-channel.

• This suggests that the current in the n-channel (ID)

would drop to 0A, but it does just the opposite: as VDS
increases, so does ID.

Faculty of Engineering
American International University-Bangladesh
 SATURATION
At the pinch-off point:

• Any further increase in VDS does not produce

any increase in ID. VDS at pinch-off is denoted
as Vp.

• ID is at saturation or maximum. It is
referred to as IDSS.

• The ohmic value of the channel is at

maximum.

Faculty of Engineering
American International University-Bangladesh
JFET modeling when ID=IDSS, VGS=0, VDS>VP

• IDSS is the maximum drain current for a JFET and

is defined by the conditions
VGS = 0 V and VDS > VP.

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American International University-Bangladesh
 VGS < 0, VDS AT SOME POSITIVE VALUE
• As VGS becomes more negative the depletion region increases.

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American International University-Bangladesh
 ID < IDSS
As VGS becomes more negative:

• The JFET will pinch-off at a lower value of VDS.

• ID decreases (ID < IDSS) even though VDS is

increased.

• Eventually ID will reach 0A. VGS at this point

is called Vp or VGS(off).

• Also note that at high levels of VDS the JFET

reaches a breakdown situation. ID will increases
uncontrollably if VDS > VDSmax.

Faculty of Engineering
American International University-Bangladesh
JFET OPERATING CHARACTERISTICS: VOLTAGE CONTROLLED RESISTOR

• The region to the left of the pinch-off

point is called the ohmic region.

• The JFET can be used as a variable

resistor, where VGS controls the drain-
source resistance (rd).
• The slope of each curve and therefore
the resistance of the device between
drain and source for VDS < VP is a
function of the applied voltage VGS.
• As VGS becomes more negative, the
resistance (rd) increases.

Faculty of Engineering
American International University-Bangladesh
P-CHANNEL JFETS
• p-Channel JFET acts the same as the n-channel JFET, except the polarities and
currents are reversed.

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American International University-Bangladesh
 End of
Lecture-3

Faculty of Engineering
American International University-Bangladesh
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