Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 16 A
ICM Collector current peak value - 40 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W
VCEsat Collector-emitter saturation voltage IC = 10 A; IB = 2.22A - 3.0 V
ICsat Collector saturation current f = 32 kHz 9 - A
f = 90 kHz 8 - A
tf Fall time. ICsat = 9.0 A; f = 32 kHz 0.20 0.26 µs
ICsat = 8.0 A; f = 90 kHz 0.12 - µs

PINNING - SOT430 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c
1 base
2 collector
b
3 emitter

heat collector
sink 1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 16 A
ICM Collector current peak value - 40 A
IB Base current (DC) - 10 A
IBM Base current peak value - 15 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W
Tstg Storage temperature -55 150 ˚C
Tj Junction temperature - 150 ˚C

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Junction to mounting base - - 1.0 K/W
Rth j-a Junction to ambient in free air 35 - K/W

STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
BVEBO Base-emitter breakdown voltage IB = 1 mA 7.5 12.8 - V
VCEOsust Collector-emitter breakdown voltage IB = 0 A;IC = 100 mA; 800 V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 10 A; IB = 2.22 A - - 3.0 V
VBEsat Base-emitter saturation voltage IC = 10 A; IB = 2.22 A 0.83 0.92 1.01 V
hFE DC current gain IC = 1 A; VCE = 5 V - 12 -
hFE IC = 10 A; VCE = 5 V 4.8 6.6 8.5

DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (32 kHz line ICsat = 9.0 A; IB1 = 1.8 A; (IB2 = -4.5 A)
deflection dynamic test circuit).
ts Turn-off storage time 3.0 4.0 µs
tf Turn-off fall time 0.20 0.26 µs
Switching times (90 kHz line ICsat = 8 A;IB1 = 1.6 A; (IB2 = -4.0 A)
deflection dynamic test circuit).
ts Turn-off storage time 2 - µs
tf Turn-off fall time 0.12 - µs

IC / mA
+ 50v
100-200R

250
Horizontal 200
Oscilloscope

Vertical 100

100R 1R
0
6V VCE / V min
30-60 Hz
VCEOsust

Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust.

1 Measured with half sine-wave voltage (curve tracer).

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

ICsat 100 hFE

TRANSISTOR
IC DIODE VCE = 1V
- - -Tj = 85 C
t Tj = 25 C

IB IBend
10
t

10us 13us

32us

VCE

1
t 0.01 0.1 1 10 IC / A 100

Fig.3. Switching times waveforms. Fig.6. High and low DC current gain.

ICsat hFE
100
90 %
VCE = 5V
- - -Tj = 85 C
Tj = 25 C
IC

10 %
10
tf t
ts
IB
IB1

1
- IB2 0.01 0.1 1 10 IC / A 100

Fig.4. Switching times definitions. Fig.7. High and low DC current gain.

+ 150 v nominal 1 VBEsat /V

adjust for ICsat
- - -Ths = 85 C IC = 10 A
Ths = 25 C

0.9

Lc
IC = 8 A
0.8

IBend LB T.U.T.
Cfb 0.7

-VBB
0.6
0 1 2 3 IB / A 4

Fig.5. Switching times test circuit. Fig.8. Typical base-emitter saturation voltage.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

VCEsat / V
10 Zth / (K/W) BU4530AL
10
- - -Tj = 85 C
Tj = 25 C

1
1 0.5
0.2
0.1 0.1
0.05
IC / IB = 5
0.1 0.02
tp t
0.01 P
D D= p
T

t
T
0.001
0.01 1E-07 1E-05 1E-03 1E-01 1E+01
0.1 1 10 IC / A 100 t/s
Fig.9. Typical collector-emitter saturation voltage. Fig.12. Transient thermal impedance.
VCEsat = f (IC); parameter IC/IB

ts/tf / us Ic(sat) (A)

10 10

8 8

6 6

4 4

2
2

0
0 0 20 40 60 80 100
0 0.5 1 1.5 2 2.5 3
IB / A frequency (kHz)

Fig.10. Typical collector storage and fall time. Fig.13. ICsat during normal running vs. frequency of
IC =9 A; Tj = 85˚C; f = 32kHz operation for optimum performance

PD% Normalised Power Derating

120
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

MECHANICAL DATA

Dimensions in mm
20.5 max 5.3 max
Net Mass: 9 g
3.1 3.0
3.53
4.06
6.17 3.0
4.06
25.5
2.99
26.5 2.09 8.53

1.92
22.53 3.13
3.23
22.63 seating
plane
2.39
2.45
19.5 18.16
min 3.5 max

0.8
1.35
0.4 M 1.0 max
3.0 max
5.45 5.45

Fig.14. SOT430; pin 2 connected to mounting base.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU4530AL

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

April 1999 6 Rev 1.100