Production specification

NPN Silicon Epitaxial Planar Transistor D882

FEATURES
Pb
 Low saturation voltage.
Lead-free
 Excellent hFE linearity and high hFE.
 Less cramping space required due to small and thin
Package and reducing the trouble for attachment to a
radiator.

APPLICATIONS
 Power amplifier application.
TO-251 TO-252

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage 30 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current -Continuous 3 A

PC Collector Dissipation 1 W

Tj,Tstg Junction and Storage Temperature -55 to +150 ℃

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Rev.A 1
 Production specification

NPN Silicon Epitaxial Planar Transistor D882

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V

Collector cut-off current ICBO VCB=40V,IE=0 1 μA

Collector cut-off current ICEO VCE=30V,IB=0 1 μA

Emitter cut-off current IEBO VEB=3V,IC=0 1 μA

VCE=2V,IC=20mA 30 150
DC current gain hFE
VCE=2V,IC=1A 60 160 400

Collector-emitter saturation voltage VCE(sat) IC=2A, IB= 0.2A 0.3 0.5 V

Base-emitter saturation voltage VBE(sat) IC=2A, IB=0.2A 1.0 2.0 V

Transition frequency fT VCE=5V, IC= 0.1A 90 MHz

Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 45 pF

CLASSIFICATION OF hFE
Rank R Q P E

Range 60-120 100-200 160-320 200-400

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Rev.A 2
 Production specification

NPN Silicon Epitaxial Planar Transistor D882

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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Rev.A 3
 Production specification

NPN Silicon Epitaxial Planar Transistor D882

PACKAGE OUTLINE
Plastic surface mounted package
TO-251

TO-251
A 2.200 2.400
b 0.500 0.700
c 0.460 0.580
D 6.500 6.700
D1 5.100 5.460
D2 4.830 Typ.
E 6.000 6.200
e 2.186 2.386
L 12.000 12.600
L1 5.100 Typ.
L2 1.400 1.700
Φ 1.100 1.300
h 0.000 0.300
V 5.350 Typ.
All Dimensions in mm

PACKAGE OUTLINE
Plastic surface mounted package
TO-252

TO-252
A 4.95 5.59
C D B 5.40 6.63
A K C 6.05 7.10
D 2.20 2.40
E 0.40 0.61
G

F 8.80 10.60
B

G 5.35 Typ.
H 1.98 2.59

E I 0.50 0.90
H
I
J 0.50 1.20
K 0.45 0.89
All Dimensions in mm

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Rev.A 4
 Production specification

NPN Silicon Epitaxial Planar Transistor D882

SOLDERING FOOTPRINT
6.40

6.80
2.70
1.50

1.80
2.30 2.30 Unit:mm

PACKAGE INFORMATION
Device Package Shipping

TO-251/252 80PCS/Tube
D882
TO-252 2500PCS/Tape&Reel

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Rev.A 5