SPW47N65C3

CoolMOSTM Power Transistor

Product Summary
Features
V DS 650 V
• Worldwide best R ds,on in TO247
R DS(on),max 0.07 Ω
• Low gate charge
Q g,typ 255 nC
• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

PG-TO247-3-1

Type Package Marking

SPW47N65C3 PG-TO247-3-1 47N65C3

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous drain current ID T C=25 °C 47 A

T C=100 °C 30

Pulsed drain current2) I D,pulse T C=25 °C 141

Avalanche energy, single pulse E AS I D=3.5 A, V DD=50 V 1800 mJ

Avalanche energy, repetitive t AR2),3) E AR I D=7 A, V DD=50 V 1

Avalanche current, repetitive t AR2),3) I AR 7 A

MOSFET dv /dt ruggedness dv /dt V DS=0...480 V 50 V/ns

Gate source voltage V GS static ±20 V

AC (f >1 Hz) ±30

Power dissipation P tot T C=25 °C 415 W

Operating and storage temperature T j, T stg -55 ... 150 °C

Mounting torque M3 and M3.5 screws 60 Ncm

Rev. 1.2 page 1 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter Symbol Conditions Value Unit

Continuous diode forward current IS 47 A

T C=25 °C
Diode pulse current 2) I S,pulse 141

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC - - 0.3 K/W

Thermal resistance, junction -

R thJA leaded - - 62
ambient

Soldering temperature, 1.6 mm (0.063 in.)

T sold - - 260 °C
wavesoldering only allowed at leads from case for 10 s

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 650 - - V

Gate threshold voltage V GS(th) V DS=V GS, I D=2.7 mA 2.1 3 3.9

V DS=600 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.5 25 µA
T j=25 °C

V DS=600 V, V GS=0 V,
- 50 -
T j=150 °C

Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA

V GS=10 V, I D=30 A,
Drain-source on-state resistance R DS(on) - 0.06 0.07 Ω
T j=25 °C

V GS=10 V, I D=30 A,
- 0.17 -
T j=150 °C

Gate resistance RG f =1 MHz, open drain - 0.75 - Ω

Rev. 1.2 page 2 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

Input capacitance C iss V GS=0 V, V DS=25 V, - 7000 - pF

Output capacitance C oss f =1 MHz - 2300 -

Effective output capacitance, energy

C o(er) - 270 -
related5)
V GS=0 V, V DS=0 V
to 480 V
Effective output capacitance, time
C o(tr) - 490 -
related6)

Turn-on delay time t d(on) - 100 - ns

V DD=400 V,
Rise time tr - 27 -
V GS=10 V, I D=47 A,
Turn-off delay time t d(off) R G=5.6 Ω - 210 -
Fall time tf - 14 -

Gate Charge Characteristics

Gate to source charge Q gs - 35 - nC

Gate to drain charge Q gd V DD=480 V, I D=47 A, - 120 -

Qg V GS=0 to 10 V
Gate charge total - 255 -

Gate plateau voltage V plateau - 5.5 - V

Reverse Diode

V GS=0 V, I F=47 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25 °C

Reverse recovery time t rr - 640 - ns

V R=480 V, I F=I S,
Reverse recovery charge Q rr - 19 - µC
di F/dt =100 A/µs
Peak reverse recovery current I rrm - 56 - A

1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.

Rev. 1.2 page 3 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3
1 Power dissipation 2 Safe operating area
P tot=f(T C) I D=f(V DS); T C=25 °C; D =0
parameter: t p

500 103

limited by on-state
resistance

400
1 µs
102 10 µs

100 µs

300
1 ms

I D [A]
P tot [W]

101 10 ms

DC
200

100

100

10-1
0
100 101 102 103
0 40 80 120 160
V DS [V]
T C [°C]

3 Max. transient thermal impedance 4 Typ. output characteristics

Z(thJC)=f(tp) I D=f(V DS); T j=25 °C
parameter: D=t p/T parameter: V GS

100 200
20 V
7V

6.5 V

0.5 150

10-1
0.2
6V
Z thJC [K/W]

0.1
I D [A]

100
0.05

0.02 5.5 V
-2
10 0.01

single pulse
50
55 V
V

4.5 V

10-3 0
10-5 10-4 10-3 10-2 10-1 100 0 5 10 15 20 25
t p [s] V DS [V]

Rev. 1.2 page 4 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C
parameter: V GS parameter: V GS

120

20 V
20 V
10 V 0.7
100 6.5 V

7V
6V
6.5 V
80 6V
5.5 V
5.5 V

R DS(on) [Ω]
0.5
5V
I D [A]

60

5V 4.5 V

4V
40
0.3
4.5 V

20

0 0.1
0 5 10 15 20 25 0 40 80 120 160
V DS [V] I D [A]

7 Drain-source on-state resistance 8 Typ. transfer characteristics

R DS(on)=f(T j); I D=30 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j

0.2 200

25°C

0.16
150

0.12
R DS(on) [Ω]

98 %
I D [A]

100
150°C

0.08 typ

50
0.04

0 0
-50 0 50 100 150 0 2 4 6 8 10
T j [°C] V GS [V]

Rev. 1.2 page 5 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=47 A pulsed I F=f(V SD)
parameter: V DD parameter: T j

10 103

120 V

480 V
102
6 150 °C
V GS [V]

I F [A]
25 °C

4
101
150 °C, 98%

2
25 °C, 98%

0 100
0 40 80 120 160 200 240 0 0.5 1 1.5 2
Q gate [nC] V SD [V]

11 Avalanche energy 12 Drain-source breakdown voltage

E AS=f(T j); I D=3.5 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA

2000

1800
710
1600

1400
680
1200
V BR(DSS) [V]
E AS [mJ]

1000

650
800

600

400 620

200

0 590
25 50 75 100 125 150 175 -60 -20 20 60 100 140 180
T j [°C] T j [°C]

Rev. 1.2 page 6 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3
13 Typ. capacitances 14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS)

105 50

104 Ciss 40

103 30

E oss [µJ]
C [pF]

Coss

102 20
Crss

101 10

100 0
0 100 200 300 400 500 0 200 400 600
V DS [V] V DS [V]

Rev. 1.2 page 7 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3

Definition of diode switching characteristics

Rev. 1.2 page 8 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3

PG-TO-247-3-1: Outlines

Rev. 1.2 page 9 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW47N65C3

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).

Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such
. components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.

Rev. 1.2 page 10 2008-02-12

Please note the new package dimensions arccording to PCN 2009-134-A

 Data sheet erratum
PCN 2009-134-A

New package outlines TO-247

1 New package outlines TO-247

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)

Figure 1 Outlines TO-247, dimensions in mm/inches

Final Data Sheet Erratum Rev. 2.0, 2010-02-01