SMD Type MOSFET
N-Channel MOSFET
IRLML2502 (KRLML2502)
SOT-23 Unit: mm
2.9 -0.1
+0.1
0.4 -0.1
+0.1
■ Features 3
0.4
● VDS (V) = 20V
+0.1
2.4 -0.1
+0.1
1.3 -0.1
● ID = 4.2 A
0.55
● RDS(ON) ＜ 45mΩ (VGS = 4.5V) 1 2
0.95 -0.1
+0.1
0.1 -0.01
+0.05
● RDS(ON) ＜ 80mΩ (VGS = 2.5V) 1.9 -0.1
+0.1
● Fast Switching
+0.1
0.97 -0.1
1. Gate
2. Source
+0.1
0.38 -0.1
0-0.1
3. Drain
G 1
3 D
S 2
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS ±12
Ta=25℃ 4.2
Continuous Drain Current ID
Ta=70℃ 3.4 A
Pulsed Drain Current IDM 33
Ta=25℃ 1.25
Power Dissipation PD W
Ta=70℃ 0.8
Linear Derating Factor 0.01 W/℃
Thermal Resistance.Junction- to-Ambient RthJA 100 ℃/W
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150
1
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SMD Type MOSFET
N-Channel MOSFET
IRLML2502 (KRLML2502)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=250uA, VGS=0V 20 V
VDS=16V, VGS=0V 1
Zero Gate Voltage Drain Current IDSS uA
VDS=16V, VGS=0V, TJ=70℃ 25
Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 0.5 1 V
VGS=4.5V, ID=4.2A 45
Static Drain-Source On-Resistance RDS(On) mΩ
VGS=2.5V, ID=3.6A 80
Forward Transconductance gFS VDS=10V, ID=4A 5.8 S
Input Capacitance Ciss 740
Output Capacitance Coss VGS=0V, VDS=15V, f=1MHz 90 pF
Reverse Transfer Capacitance Crss 66
Total Gate Charge Qg 12
Gate Source Charge Qgs VGS=5V, VDS=10V, ID=4A 2.7 nC
Gate Drain Charge Qgd 2.6
Turn-On DelayTime td(on) 7.5
Turn-On Rise Time tr 10
VDD=10V, I D =1 A , RL=6Ω,RGEN=10Ω
Turn-Off DelayTime td(off) 54 ns
Turn-Off Fall Time tf 26
Body Diode Reverse Recovery Time trr 24
IF= 1.3A, dI/dt= 100A/us ,TJ = 25℃
Body Diode Reverse Recovery Charge Qrr 13 nC
Continuous Source Current IS MOSFET symbol D
1.3
showing the
A
integral reverse G
Pulsed Source Current ISM p-n junction diode. S 33
Diode Forward Voltage VSD IS=1.3A,VGS=0V ,TJ = 25℃ 1.2 V
■ Marking
Marking 1G**
2
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SMD Type MOSFET
N-Channel MOSFET
IRLML2502 (KRLML2502)
■ Typical Characterisitics
100 VGS
100 VGS
TOP 7.00V TOP 7.00V
5.00V 5.00V
4.50V 4.50V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
3.50V 3.50V
3.00V 3.00V
2.70V 2.70V
2.50V 2.50V
BOTTOM 2.25V BOTTOM 2.25V
2.25V
2.25V
10 10
20µs PULSE WIDTH 20µs PULSE WIDTH
TJ = 25 °C TJ = 150 °C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100 2.0
ID = 4.0A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
1.5
(Normalized)
TJ = 25 ° C
1.0
TJ = 150 ° C
0.5
V DS = 15V
20µs PULSE WIDTH VGS = 4.5V
10 0.0
2.0 2.4 2.8 3.2 3.6 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
1200 10
VGS = 0V, f = 1MHz ID = 4.0A
Ciss = Cgs + Cgd , Cds SHORTED VDS = 10V
Crss = Cgd
VGS , Gate-to-Source Voltage (V)
1000 Coss = Cds + Cgd 8
C, Capacitance (pF)
800 Ciss
6
600
4
400
2
200
Coss
Crss
0 0
1 10 100 0 4 8 12 16
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
3
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SMD Type MOSFET
N-Channel MOSFET
IRLML2502 (KRLML2502)
■ Typical Characterisitics
100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)
100
ID , Drain Current (A)
10
TJ = 150 ° C
10us
10
100us
1 1ms
1
TJ = 25 ° C
10ms
TA = 25 ° C
TJ = 150 ° C
V GS = 0 V Single Pulse
0.1 0.1
0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage
4.0
3.0
ID , Drain Current (A)
2.0
1.0
0.0
25 . 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
Thermal Response (Z thJA )
100
D = 0.50
0.20
10 0.10
0.05
PDM
0.02
0.01 t1
1 SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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SMD Type MOSFET
N-Channel MOSFET
IRLML2502 (KRLML2502)
■ Typical Characterisitics
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
0.05 0.30
RDS(on) , Drain-to -Source Voltage ( Ω )
VGS = 2.5V
0.04 0.20
Id = 4.0A
0.03 0.10
VGS = 4.5V
0.02 0.00
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40
VGS, Gate -to -Source Voltage ( V ) iD , Drain Current ( A )
Fig 11. On-Resistance Vs. Gate Voltage Fig 12. On-Resistance Vs. Drain Current
5
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