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Electronic Devices and Circuits: Andhra Pradesh, India

The document outlines the syllabus for the Electronic Devices and Circuits course taught at Jawaharlal Nehru Technological University, including course objectives to understand semiconductor physics, diode operation and characteristics, and transistor operation through biasing and small signal analysis, with topics covered including junction diodes, special devices, rectifiers, transistor characteristics, biasing, and amplifier models. The syllabus also includes a list of experiments to be performed in the accompanying lab course to obtain device characteristics and analyze circuits using diodes, transistors, and other electronic components.

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k jayaram kumar ACET
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297 views5 pages

Electronic Devices and Circuits: Andhra Pradesh, India

The document outlines the syllabus for the Electronic Devices and Circuits course taught at Jawaharlal Nehru Technological University, including course objectives to understand semiconductor physics, diode operation and characteristics, and transistor operation through biasing and small signal analysis, with topics covered including junction diodes, special devices, rectifiers, transistor characteristics, biasing, and amplifier models. The syllabus also includes a list of experiments to be performed in the accompanying lab course to obtain device characteristics and analyze circuits using diodes, transistors, and other electronic components.

Uploaded by

k jayaram kumar ACET
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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R-19 Syllabus for ECE - JNTUK w. e. f.

2019 – 20

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY: KAKINADA


KAKINADA – 533 003, Andhra Pradesh, India
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

II Year - I Semester L T P C
3 0 0 3
ELECTRONIC DEVICES AND CIRCUITS

Course Objectives:
The main objectives of this course are
 To learn and understand the basic concepts of semiconductor physics.
 Study the physical phenomena such as conduction, transport mechanism and
electrical characteristics of different diodes.
 To learn and understandthe application of diodes as rectifiers with their operation
and characteristics with and without filters arediscussed.
 Acquire knowledge about the principle of working and operation of Bipolar
Junction Transistor and Field Effect Transistor and theircharacteristics.
 To learn and understandthe purpose of transistor biasing and itssignificance.
 Small signal equivalent circuit analysis of BJT and FET transistor amplifiers
and compare differentconfigurations.

UNIT-I:Review of Semi Conductor Physics: Hall effect, continuity equation, law of junction,
Fermi Dirac function, Fermi level in intrinsic and extrinsic Semiconductors

Junction Diode Characteristics : energy band diagram of PN junction Diode, Open circuited p-
n junction, Biased p-n junction, p-n junction diode,current components in PN junction Diode,
diode equation, V-I Characteristics, temperature dependence on V-I characteristics, Diode
resistance, Diode capacitance.

UNIT-II:
Special Semiconductor Devices: Zener Diode, Breakdown mechanisms, Zener diode
applications, LED, Varactor Diode, Photodiode, Tunnel Diode, UJT, PN-PN Diode, SCR.
Construction, operation and V-I characteristics.
Rectifiers and Filters: Basic Rectifier setup, half wave rectifier, full wave rectifier, bridge
rectifier,derivations of characteristics of rectifiers, rectifier circuits-operation, input and output
waveforms, Filters, Inductor filter(Series inductor), Capacitor filter(Stunt inductor), π-
Filter,comparison of various filter circuits in terms of ripple factors.

UNIT- III: Transistor Characteristics:


BJT: Junction transistor, transistor current components, transistor equation, transistor
configurations, transistor asan amplifier, characteristics of transistor in Common Base, Common
Emitter and Common Collector configurations, Ebers-Moll model of a transistor, punch through/
reach through, Photo transistor, typical transistor junction voltage values.
FET: FET types, construction, operation, characteristicsµ, gm, rdparameters, MOSFET-types,
construction, operation,characteristics, comparison between JFET and MOSFET.
UNIT- IV: Transistor Biasing and Thermal Stabilization : Need for biasing, operating point,
load line analysis,BJT biasing- methods, basic stability, fixed bias, collector to base bias, self
' '’
bias, Stabilization against variations in VBE, Ic, and β, Stability factors, (S,S ,S ), Bias
compensation, Thermal runaway, Thermalstability.
FET Biasing- methods and stabilization.
UNIT- V: Small Signal Low Frequency Transistor Amplifier Models:
BJT: Two port network, Transistor hybrid model, determination of h-parameters, conversion of
h-parameters,generalized analysis of transistor amplifier model using h-parameters, Analysis of
CB, CE and CC amplifiers using exact and approximate analysis, Comparison of transistor
amplifiers.
FET: Generalized analysis of small signal model, Analysis of CG, CS and CD amplifiers,
comparison of FETamplifiers.
Text Books:
1. Electronic Devices and Circuits- J. Millman, C. Halkias, Tata Mc-Graw Hill,
SecondEdition,2007
2.Electronic Devices and Circuits-K. Lal Kishore, BS Publications,
FourthEdition,2016. 3.Electronics devices & circuit theory- Robert L.Boylestad
andLouiNashelsky,
Pearson/Prentice hall, tenth edition,2009

References:
1.Integrated Electronics-J. Millman, C. Halkias,Tata Mc-Graw Hill, SecondEdition,2009
2.Electronic Devices and Integrated Circuits – B.P. Singh,Rekha , Pearson publications,
3.Electronic Devices and Circuits-Salivahanan, Kumar, Vallavaraj, Tata Mc-Graw Hill,
4thEdition,2008.

Course Outcomes:
At the end of this course the student will be able to
 Apply the basic concepts of semiconductor physics.
 Understand the formation of p-n junction and how it can be used as a p-n junction
as diode in different modes of operation.
 Know the construction, working principle of rectifiers with and without filters
with relevant expressions and necessary comparisons.
 Understand the construction, principle of operation of transistors, BJT and FET
withtheir V-I characteristics in different configurations.
 Know the need of transistor biasing, various biasing techniques for BJT and FET
and stabilization concepts with necessary expressions.
 Perform the analysis of small signal low frequency transistor amplifier circuits using
Design
BJT ofFET
and encoder ,decoder, configurations.
in different multiplexer and demultiplexers, Implementation of higher
order
R-19 Syllabus for ECE - JNTUK w. e. f. 2019 – 20

JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY: KAKINADA


KAKINADA – 533 003, Andhra Pradesh, India
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING
II Year - I Semester L T P C
0 0 3 1.5

ELECTRONIC DEVICES AND CIRCUITS LAB

Note: The students are required to perform the experiment to obtain the V-I characteristics and
to determine the relevant parameters from the obtained graphs.

Electronic Workshop Practice:


1. Identification, Specifications, Testing of R, L, C Components
(ColourCodes), Potentiometers, Coils, Gang Condensers, Relays,
BreadBoards.
2. Identification, Specifications and Testing of active devices, Diodes, BJTs,
JFETs,LEDs, LCDs, SCR,UJT.
3. Soldering Practice- Simple circuits using active and passivecomponents.
4. Study and operation of Ammeters, Voltmeters, Transformers, Analog
andDigital Multimeter, Function Generator, Regulated Power Supply andCRO.

List of Experiments: (Minimum of Ten Experiments has to be performed)

1. P-N Junction DiodeCharacteristics


Part A: Germanium Diode (Forward bias& Reverse bias)
Part B: Silicon Diode (Forward Bias only)
2. Zener
DiodeCharacteristics Part
A: V-ICharacteristics
Part B: Zener Diode as Voltage Regulator
3. Rectifiers (without and withc-filter)
Part A: Half-waveRectifier
Part B: Full-wave Rectifier
4. BJT
Characteristics(CEConfiguration) Part
A: InputCharacteristics
Part B: Output Characteristics
5. FET
Characteristics(CSConfiguration) Part
A: DrainCharacteristics
Part B: Transfer Characteristics
6. SCRCharacteristics
7. UJTCharacteristics
8. TransistorBiasing
9. CRO Operation and itsMeasurements
10. BJT-CEAmplifier
11. Emitter Follower-CCAmplifier
12. FET-CSAmplifier

Equipment required:
1. Regulated Powersupplies
2. Analog/Digital StorageOscilloscopes
3. Analog/Digital FunctionGenerators
4. DigitalMulti-meters
5. Decade RésistanceBoxes/Rheostats
6. Decade CapacitanceBoxes
7. Ammeters (Analog orDigital)
8. Voltmeters (Analog orDigital)
9. Active & Passive ElectronicComponents

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