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Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

The document provides product specifications for the 2SD1413 silicon NPN power transistor from Inchange Semiconductor. It is packaged in a TO-220Fa case and is suitable for power amplifier and switching applications. Key specifications include a maximum collector-emitter voltage of 40V, collector current of 3A, and saturation voltage below 1.5V. It also lists electrical characteristics, switching times, and package outline dimensions.

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72 views3 pages

Silicon NPN Power Transistors: Inchange Semiconductor Product Specification

The document provides product specifications for the 2SD1413 silicon NPN power transistor from Inchange Semiconductor. It is packaged in a TO-220Fa case and is suitable for power amplifier and switching applications. Key specifications include a maximum collector-emitter voltage of 40V, collector current of 3A, and saturation voltage below 1.5V. It also lists electrical characteristics, switching times, and package outline dimensions.

Uploaded by

denito
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Inchange Semiconductor Product Specification

www.DataSheet4U.com

Silicon NPN Power Transistors 2SD1413

DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SB1023
·DARLINGTON

APPLICATIONS
·Power amplifier and switching applications
·Hammer drive,pulse motor drive applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-220Fa) and symbol
3 Emitter

Absolute maximum ratings(Ta=25℃)


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 60 V

VCEO Collector -emitter voltage Open base 40 V

VEBO Emitter-base voltage Open collector 5 V

IC Collector current 3 A

IB Base current 0.5 A

PC Collector power dissipation TC=25℃ 20 W

Tj Junction temperature 150 ℃

Tstg Storage temperature -55~150 ℃


Inchange Semiconductor Product Specification
www.DataSheet4U.com

Silicon NPN Power Transistors 2SD1413

CHARACTERISTICS
Tj=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 40 V

VCEsat Collector-emitter saturation voltage IC=2A ;IB=4mA 1.5 V

VBEsat Base-emitter saturation voltage IC=2A ;IB=4mA 2.0 V

ICBO Collector cut-off current VCB=60V; IE=0 20 μA

IEBO Emitter cut-off current VEB=5V; IC=0 2.5 mA

hFE-1 DC current gain IC=1A ; VCE=2V 2000

hFE-2 DC current gain IC=3A ; VCE=2V 1000

Switching times

ton Turn-on time 0.1 μs

IB1=-IB2=6mA
tstg Storage time 1.0 μs
VCC=30V ,RL=10Ω

tf Fall time 0.2 μs

2
Inchange Semiconductor Product Specification
www.DataSheet4U.com

Silicon NPN Power Transistors 2SD1413

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)

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