Contents
• Applications of PN Junction Diode
• PN Junction Formation
• PN Junction diode symbol
• Open Circuited PN Junction{ Barrier potential,
Depletion Region, Charge Density(ρ),Electric
Field Intensity, Potential Energy barrier for
Electrons and Holes}
Applications of PN Junction Diode
• Rectifiers: Converts AC To DC designed by
using PN Junction Diode
230V 5V DC
Charger/Adapter
AC 9V DC
12V DC
Contd..
• Voltage Multiplier
5V DC PN Junction diode+ 10V DC
Capacitor 15V DC
Contd..
• Variable capacitor(or) Varactor diode
• Special diodes like Zener diode, Tunnel Diode,
Solar cell, LED, photodiode etc.
• Clippers
• Clampers
• Switch
PN Junction Formation(or)
Construction
When a p-type semiconductor is suitably joined
to the n-type semiconductor, the contact surface
is called PN junction.
=NA
PN Junction Formation
=NA ND
PN Junction Formation
=NA ND
Contd..
Example of PN Junction
Formation(Alloying)
Abrupt (or) Step Graded PN Junction
• At Junction x=0 there is a large
change in carrier concentrations
occur.
• As the junction is crossed from P-
side to n-side sudden decrease in
hole concentration (Pp to Pn) and
sudden increase in electron
concentration (np to nn)
• These sudden changes appear as
step type at junction so PN
junction also known as Abrupt
(or) step graded Junction.
PN Junction diode symbol
P-Type N-Type • PN Junction diode has
two terminals called
“ELECTRODES” one each
from P-region and n-
region.
• The p region is called
anode and n type region
is called cathode.
• Due to the two
electrodes it is called
“DIODE”
DIODE=DI + Electrode
Metal Contacts (or) Ohmic Contacts
• It conducts currents
equally in both the
directions.
• The drop across
contact is very small it
does not affect the
performance of the
device
N-type semiconductor
+14
Si & P
-14
+14
+ ion is
-13
One electron is
+ taken out from n-
type
semiconductor
P-type semiconductor
P-type semiconductor
+14
Si & B
-14
+14
- ion is
-15
One electron is
-
accepted in p-
type
semiconductor
Qualitative theory of P-N junction
diode
P-N JUNCTION DIODE
No bias (or) Open Biasing of PN
Circuited PN Junction Diode
Junction(or) PN • Forward Bias
Junction in • Reverse Bias
Equilibrium
• Barrier Potential
• Depletion Region
Open Circuited PN Junction
Although P-type material has holes in excess and N-type material has a
number of free conduction electron however the net number of proton and
electron are equal in each individual material keeping it just neutral.
At the junction due to non
uniform concentration free
electrons jumps from N-
side to the P-side and the
holes jumps from P-side
to the N-side. This Process
is known as Diffusion.
Contd..
When electron moves it
leaves a positive ion in n-
side and in p-side it
accepts an electron so it
leaves a negative ion.
These positive and
negative ions are called as
Uncovered Charges.
Uncovered Charges (or)
Unneutralised Charges (or)
Uncompensated Charges
Contd..
Uncovered Charges (or)
Unneutralised Charges (or)
Uncompensated Charges
Depletion Region(or) Space Charge
Region(or) Transition Region
• The two layers of positive
and negative charges is
called as Depletion
Region(or) Depletion Layer
(because emptied of charge
carriers)
• This region having only ions
so it called Space Charge
Region
• It separates the two neutral
width (0.5 to 1 areas called Transition
micron) (W) region
Contd..
The Depletion Region Penetrates more on lightly doped side.
Barrier Potential(or) Junction Potential
(or)Cut-in Potential (or)Built-in
potential(V0)
Electric Field(E)
• Depletion region acts as a
barrier to prevent further
movement of electrons
and holes.
• According to coulombs
law there exists force
between two charges
and this force produce
Electric Field (E).
E=0 V0 E=0
Contd..
• The opposite charges existing near the
junction creates a potential difference
(voltage) across the junction called Barrier
potential, Junction potential (or) Cut-in
potential (V0).
• For silicon V0=0.7V
• For Germanium V0=0.3V
Width of Depletion Region(w)
Open Circuit PN junction Diode
Current
• Due to majority carriers Diffusion current
Electron diffused
Holes diffused
Contd..
• Due to minority carriers Drift current
Electron drift from p to n
Hole drift from n to p
Contd..
In open Circuit Condition Total current is ZERO
Contd..
• Charge density (ρ) is charge per unit area=nq
/pq (e- Conc. Per unit area (or) hole Conc. Per
unit area)
• At p-side
ρ=NA(-q)=-qNA
Contd..
• Charge density (ρ) is charge per unit area=nq
/pq (e- Conc. Per unit area (or) hole Conc. Per
unit area)
• At p-side
ρ=NA(-q)=-qNA
• At N-side
ρ=ND(q)= qND
Contd..
• The net positive charge at n-side
(Charge Density Per unit
area (A) up to distance )
Contd..
• The net positive charge at n-side
(1)
• The net negative charge at p-side
(2)
Contd..
• The net positive charge at n-side
(1)
• The net positive charge at p-side
(2)
(3)
(4)
Electric Field Intensity(E or ɛ)
The poisson’s equation
Integrating above equation
We know that
Contd..
(5)
i.e., Integrating the charge density electric field
distribution obtained.
