This document provides specifications for high-power NPN silicon transistors from Quality Semi-Conductors including the 2N6274, 2N6275, and 2N6277 models. The transistors are designed for industrial and military power amplifier and switching applications with maximum ratings of 50 amperes of continuous collector current. Key specifications listed include high breakdown voltages from 100-180V, current gains of 10 or more at 50A, fast switching times under 0.35 microseconds, and power dissipation ratings up to 250 watts.
This document provides specifications for high-power NPN silicon transistors from Quality Semi-Conductors including the 2N6274, 2N6275, and 2N6277 models. The transistors are designed for industrial and military power amplifier and switching applications with maximum ratings of 50 amperes of continuous collector current. Key specifications listed include high breakdown voltages from 100-180V, current gains of 10 or more at 50A, fast switching times under 0.35 microseconds, and power dissipation ratings up to 250 watts.
This document provides specifications for high-power NPN silicon transistors from Quality Semi-Conductors including the 2N6274, 2N6275, and 2N6277 models. The transistors are designed for industrial and military power amplifier and switching applications with maximum ratings of 50 amperes of continuous collector current. Key specifications listed include high breakdown voltages from 100-180V, current gains of 10 or more at 50A, fast switching times under 0.35 microseconds, and power dissipation ratings up to 250 watts.
This document provides specifications for high-power NPN silicon transistors from Quality Semi-Conductors including the 2N6274, 2N6275, and 2N6277 models. The transistors are designed for industrial and military power amplifier and switching applications with maximum ratings of 50 amperes of continuous collector current. Key specifications listed include high breakdown voltages from 100-180V, current gains of 10 or more at 50A, fast switching times under 0.35 microseconds, and power dissipation ratings up to 250 watts.
SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 U.S.A. FAX: (201) 376-8960
2N6274 High-Power NPN Silicon 2N6275 TVansistors 2N6277 . . . designed for use In industrial-military power ampllfer and switching circuit applications. • High Collector Emitter Sustaining — 50 AMPERE VCEO(sus) - 10°Vdo (Mln) — 2N6274 POWER TRANSISTORS = 120 Vdc (Win) — 2N6275 NPN SILICON -150Vdc(Min) — 2N6277 100,120,140,150 VOLTS • High DC Current Gain — 250 WATTS
= 10(Mln)@lc-SOAdc • Low Collector-Emitter Saturation Voltage — VcE(sat) - 1 -0 Vdc (Max) @ IG - 20 Ado • Fast Switching Times @ Ic 20 Adc tr = 0.35ns (Max) tg . 0.8 (is (Max) tf *. 0.25 pa (Max) • Complement to 2N6377-79 MAXIMUM RATINQS(I) Rating Symbol 2N6274 2N6275 2N6277 Unit Collector-Base Voltage VCB 120 140 180 Vdo Collector-Emitter Voltage VCEO 100 120 160 Vdo Emitter-Base Voltage VEB 6.0 Vdc Collector Current — Continuous 'c 50 Adc Peak 100 Base Current IB 20 Adc Total Device Dissipation @ TC - 25°C PD 250 fWatts Derate above 25'C 1.43 VW'C Operating and Storage Junction TJ. Tstg -65 to +200 •C Temperature Range THERMAL CHARACTERISTIC Characteristic Symbol Max Unit Thermal Resistance, Junction to Case 8JC 0.7 °c/w (1) Indicates JEDEC Registered Data. g
\^ POWER DISSIPATION (WATTS)
g 8
\, 1
\ S
Q 0 25 50 75 100 125 150 ^^
175 s2« TC, CASE TEMPERATURE CO
Figure 1. Power Derating
Quality Semi-Conductors <=>e.mi-Conducto\ tfnc. 20 STERN AVE. TELEPHONE: (201) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 U.S.A. FAX: (201) 376-8960
2N6274 2N6275 2N6277
•ELECTRICAL CHARACTERISTICS (TC • 25°C ""I** otherwise noted) Characteristic Symbol I Mln | Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1 ) vCEO(sus) Vdc IC - 50 mAdc, IB - °) 2N6274 100 2N6278 120 — 2N6277 150 Collector Cutoff Current 'CEO pAdo (VCE -50 Vdc, I0-0) 2N6274 _ 50 (VcE -60 Vdc, IB -0) 2N627S 50 (VcE -75 Vdc, lB-0) 2N6277 50 Collector Cutoff Current ICEX (VCE - Rated VCB. VEB(off) - 1 -5 Vdo) — 10 jiAdC (VCE - Rated VCB, VEB(O«) - L5 Vdc, TC - 150°C) 1.0 mAdc Emitter Cutoff Current O/BE - 6.0 Vdc, Ic - 0) !EBO — 100 liAdc OH CHARACTERISTICS (1) DC Current Gain hFE IC- 1.0 Adc, VCE -4.0 Vdc) 50 IC - 20 Adc, VCE - 4.0 Vdc) 30 120 lC-50Adc,VCE-4.0Vdo) 10 Collector-Emitter Saturation Voltage VCE (««*) Vdc IC- 20 Ado, IB -2.0 Ado) — 1,0 I C - 50 Ado, IB -10 Adc) 3.0 Base-Emitter Saturation Voltage vBE(sat) Vdc IC- 20 Adc, IB -2.0 Adc) — 1.8 i c - so Adc, IB -10 Adc) 3.5 Base-Emitter On Voltage (lc . 20 Adc, VCE - 4.0 Vdc) VBE(on) — 1.8 Vdc DYNAMIC CHARACTERISTICS Current-Oaln Bandwidth Product (2) (lc - 1.0 Adc, VCE - 10 Vdc, ftest - 10 MHz) IT 30 — MHz Output Capacitanca (Vce - 1 0 Vdc, IE . 0, f . 0.1 MHz) Cob — 600 PF SWITCHING CHARACTERISTICS Rise Time V — 0.35 I* (Vcc - 80 Vdc, IC - 20 Adc, IBI - 2.0 Adc. VBE(o(() . 5.0 Vdc) Storage Time »3 — 0.80 va (Vcc - BO Vdc, lc - 20 Adc, lB1 - lB2 - 2.0 Adc) Fall Time tf — 0.25 us (Vcc - B0 Vdo- 'C - 20 Adc, IBI - >B2 - 2-°Adc> • Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width s 300 us, Duty Cycle & 2.0%. (2) fr-Into"•'tart
