Chapter 2

2-2) The specific density of tungsten is 18.8 g/cm3,and its atomic weight is 184.0.
Assume that there are two free electrons per atom. Calculate the concentration
of free electrons.
Answer
d = 18.8 g / cm = 18.8*10 kg / m
3 3 3

A = 184.0
ν =2
A 0 d ν *103 6.023*1023 *18.8*103 * 2*103
n= = = 1.23*1029 electron / m 3
A 184.0

2-3)
(a) Compute the conductivity of copper for which µ = 34.8cm 2 /V s and d=8.9
g/cm3.
(b) If an electrical field is applied across such a copper bar with an intensity
10V/cm, find the average velocity of the free electrons.
Answer
(a)
µ = 34.8cm 2 /V s = 34.8*10−4 m 2 /V s
d = 8.9 g / cm 3 = 8.9*103 kg / m 3
ν = 1electron / atom
A = 63.54
A 0 d ν *103 6.023*1023 *8.9*103 *1*103
n= = = 8.4*1028 electron / m 3
A 63.54
σ = nq µ = 8.4*10 *1.6*10 *34.8*10−4 = 4.697 *107 (Ω m ) −1
28 −19

(b)
E = 10V / cm = 103V / m
v = µ E = 103 *34.8*10−4 = 3.48 m / s

2-4) Compute the mobility of free electrons in aluminum for which the density is
2.70 g/cm3 and the resistivity is 3.44 *10 − 6 Ω cm . Assume that aluminum has
three valance electrons /atom.
Answer

d = 2.7 g / cm 3 = 2.7 *103 kg / m 3

2-5) The resistance of No. 18 copper wire (diameter = 1.03 mm) is 6.51Ω per
1000ft. The concentration of free electrons in copper is 8.4*1028 electons / m 3 . If
the current is 2 A, find the (a) drift velocity (b)mobility (c)conductivity
Answer
d = 1.03mm
r = .565*10−3 m
πd 2
A =πr2 = = 8.66*10−7 m 2
4
R = 6.51Ω
L = 1000ft = 1000*.305 = 305m
n = 8.4*1028 electrons / m 3
I = 2A
L 305
σ= = −7
= 5.41*107 (Ω m ) −1
RA 6.51*8.66*10
σ 5.41*107
µ= = = .004m 2 /V s
nq 8.4*1028 *1.6*10−19
V IR 2*6.51
v = µE = µ = µ = .004* = 1.72*10−4 m / s
L L 305

2-7)
(a) Find the concentration of holes and of electrons in a p-type germanium at
300K if the conductivity is 100 (Ω m ) −1
(b)Repeat part a for n-type silicon if the conductivity is 0.1(Ω m ) −1
Answer
a)
n i = 2.5*1013 electrons / cm 3
µ p = 1800 cm 2 /V s
σ = pq µ p
σ 100
p= = = 3.47 *1017 holes / cm 3
q µ p 1.6*10 *1800
−19

n i 2 (2.5*1013 ) 2
n= = = 1.8*109 electrons / cm 3
P 3.47 *1017
b)
n i = 1.5*1010 electrons / cm 3
µn = 1300 cm 2 /V s
σ = nq µn
σ 0.1
n= = = 4.8*1014 electrons / cm 3
q µn 1.6*10 *1300
−19

n i 2 (1.5*1010 ) 2
p= = 14
= 4.68*105 holes / cm 3
n 4.8*10

2-8)
a) Show that the resistivity of intrinsic germanium at 300K is 45Ω m .
b) If a donor-type impurity is added to the extent of 1 atom per 108 germanium
atoms prove that the resistivity drops to 3.7 Ω cm

Answer
a)
n i = 2.5*1013 electrons / cm 3
µ p = 1800 cm 2 /V s
µn = 3800 cm 2 /V s
σ = n i q ( µ p + µn ) = 2.5*1013 *1.6*10−19 *(1800 + 3800)
= 0.0224 (Ω cm ) −1
1
ρ = = 44.64 Ω cm ≅ 45 Ω cm
σ

b)
n − type
d = 5.32 g / cm 3
A = 72.6
A 0 d 6.023*10 23 *5.32
N = = = 4.41*1022 atom / cm 3
A 72.6
22
4.41*10
n ≅ND = 8
= 4.41*1014 , as for each 108 Ge atom there are one donor atom
10
σ = nq µn = 4.41*1014 *1.6*10−19 *3800 = 0.268(Ω m ) −1
1
ρ= = 3.72 Ω m
σ
2-9)
a) Find the resistivity of intrinsic silicon at 300K.
b) If a donor-type impurity is added to the extent of 1 atom per 108 silicon atoms,
find the resistivity.
Answer
a)
n i = 1.5*1010 electrons / cm 3
µ p = 500 cm 2 /V s
µn = 1300 cm 2 /V s
σ = n i q ( µ p + µn ) = 1.5*1010 *1.6*10−19 *(1300 + 500)
= 4.32*10−6 (Ω cm ) −1
1
ρ = = 2.3*105 Ω cm
σ

b)
n − type
d = 2.33g / cm 3
A = 28.1
A 0 d 6.023*1023 * 2.33
N = = = 4.99*1022 atom / cm 3
A 28.1
4.99*1022
n ≅ND = 8
= 4.99*1014 , as for each 108 Ge atom there are one donor atom
10
σ = nq µn = 4.99*1014 *1.6*10−19 *1300 = 0.104(Ω m ) −1
1
ρ= = 9.634 Ω m
σ
2-10) Consider intrinsic germanium at room temperature (300K). By what
percentage does the conductivity increase per degree rise in temperature?
Answer
Eg
−
σ 301 = σ 0 e 2 kT 301

Eg
−
σ 300 = σ 0 e kT 300

Eg
−
Eg ⎛ 1 1 ⎞
σ 301 σ 0 e 2 kT 301 Eg Eg
− + − ⎜ − ⎟
= = e 2 kT 301 2 kT 300
=e 2 k ⎝ 301 300 ⎠

σ 300 −
Eg

σ 0 e 2 kT 300

.67 ⎛ 1 1 ⎞
− ⎜ − ⎟
2*8.62*10−5 ⎝ 301 300 ⎠
=e = 1.044
W here Eg = .67 eV , K = 8.62*10−5 eV / K
σ 301 = 1.044* σ 300
σ 301 − σ 300 1.044* σ 300 − σ 300
conductivity increase= = *100 = 4.4%
σ 300 σ 300
2-11) Repeat Prob. 2-10 for intrinsic silicon.
Answer
Eg
−
σ 301 = σ 0 e 2 kT 301

Eg
−
σ 300 = σ 0 e kT 300

Eg
−
Eg ⎛ 1 1 ⎞
σ 301 σ 0 e 2 kT
Eg Eg
− 301 + − ⎜ − ⎟
= = e 2 kT 301 2 kT 300
=e 2 k ⎝ 301 300 ⎠

σ 300 −
Eg

σ 0 e 2 kT 300

1.1 ⎛ 1 1 ⎞
− ⎜ − ⎟
2*8.62*10−5 ⎝ 301 300 ⎠
=e = 1.073
W here Eg = 1.1eV , K = 8.62*10 −5 eV / K
σ 301 = 1.073*σ 300
σ 301 − σ 300 1.073*σ 300 − σ 300
conductivity increase= = *100 = 7.3%
σ 300 σ 300