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N-Well: r101 Minimum width 12λ r102 Between wells 12 λ r110 Minimum well Area 144 λ

This document contains design rules for an N-well CMOS process. It lists over 30 rules (labeled r101-r510) specifying minimum dimensions for wells, diffusions, polysilicon gates, contacts, and metals. Key rules include: - Minimum N-well width is 12λ (r101) - Minimum spacing between wells and diffusions is 4-12λ (r102, r204) - Minimum widths for N+ and P+ diffusions is 4λ (r201) - Minimum polysilicon gate width is 2λ (r301) - Minimum contact and metal widths are 2λ and minimum areas are 16λ2 (r401, r510)

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30 views

N-Well: r101 Minimum width 12λ r102 Between wells 12 λ r110 Minimum well Area 144 λ

This document contains design rules for an N-well CMOS process. It lists over 30 rules (labeled r101-r510) specifying minimum dimensions for wells, diffusions, polysilicon gates, contacts, and metals. Key rules include: - Minimum N-well width is 12λ (r101) - Minimum spacing between wells and diffusions is 4-12λ (r102, r204) - Minimum widths for N+ and P+ diffusions is 4λ (r201) - Minimum polysilicon gate width is 2λ (r301) - Minimum contact and metal widths are 2λ and minimum areas are 16λ2 (r401, r510)

Uploaded by

rosestrikes
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Design Rules

N- Well

r101 Minimum width 12λ


r102 Between wells 12 λ
r110 Minimum well Area 144 λ2

r 101 r 102

N - Well
r201 Minimum N+ and P+ diffusion width 4λ

r 201 P+ Diff

N - Well

r 201 N+ Diff
r202 Between two P+ and N+ diffusions 4λ

r 202
P+ Diff

N - Well

r 202
N+ Diff
r203 Extra N-well after P+ diffusion 6λ

r 203
P+ Diff

r 203

N - Well

N+ Diff
r204 Between N+ diffusion and n-well 6λ

P+ Diff

N - Well

r 204

N+ Diff
r210 Minimum diffusion area 16λ2

r 210 P+ Diff

N - Well

r 210 N+ Diff
r301 Polysilicon Width 2λ

Polysilicon
r 301

P+ Diff

N - Well

Polysilicon
r 301

N+ Diff
r302 Polysilicon gate on Diffusion 2λ

Polysilicon

r 302

P+ Diff

N - Well

Polysilicon

r 302

N+ Diff
r307 Extra Polysilicon surrounding Diffusion 3λ

Polysilicon

r 307

P+ Diff
r 307

N - Well

Polysilicon

r 307

N+ Diff

r 307
r304 Between two Polysilicon boxes 3λ

Polysilicon

r 304
P+ Diff

N - Well

Polysilicon

r 304
N+ Diff
r306 Diffusion after Polysilicon 4λ

Polysilicon

r 307 r 307

P+ Diff

N - Well

Polysilicon

r 307 r 307

N+ Diff
r401 Contact width 2λ

Contact
r 401

Polysilicon Contact

Metal/Polysilicon Contact
r404 Extra Poly surrounding contact 1λ

Contact

r 404 r 404
Polysilicon Contact

Metal/Polysilicon Contact
r405 Extra metal surrounding contact 1λ

Contact

Polysilicon Contact

Metal/Polysilicon Contact

r 405 r 405
r403 Extra diffusion surrounding contact 1λ

Polysilicon
r 403

P+ Diff

N - Well

Polysilicon
r 403

N+ Diff
r501 Between two Metals 4λ

Metal 1 Metal 4

r 501

Metal 2 Metal 5

r 501

Metal 3 Metal 6
r510 Minimum Metal area 16λ2

Metal 1 Metal 4
r 510 r 510

Metal 2 Metal 5
r 510 r 510

Metal 3 Metal 6
r 510 r 510

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