GSIB2020 Thru GSIB2080: Vishay General Semiconductor
GSIB2020 Thru GSIB2080: Vishay General Semiconductor
GSIB2020 Thru GSIB2080: Vishay General Semiconductor
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 2500 VRMS
~ ~ ~
~ • Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
Case Style GSIB-5S
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, industrial automation
PRIMARY CHARACTERISTICS applications.
IF(AV) 20 A
VRRM 200 V to 800 V
MECHANICAL DATA
IFSM 240 A
Case: GSIB-5S
Epoxy meets UL 94V-0 flammability rating
IR 10 µA
Terminals: Matte tin plated leads, solderable per
VF 1.0 V
J-STD-002 and JESD22-B102
TJ max. 150 °C
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
Document Number: 88645 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Jan-08 [email protected], [email protected], [email protected] 1
New Product
GSIB2020 thru GSIB2080
Vishay General Semiconductor
30 400
Average Forward Output Current (A)
25 350
5 P.C.B. Mounting, TA 50
1.0 Cycle
0 0
0 25 50 75 100 125 150 1 10 100
Temperature (°C) Number of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88645
2 [email protected], [email protected], [email protected] Revision: 31-Jan-08
New Product
GSIB2020 thru GSIB2080
Vishay General Semiconductor
100 1000
Instantaneous Forward Current (A)
10
0.1
0.01 1
0.6 0.8 1.0 1.2 1.4 1 10 100
Instantaneous Forward Voltage (V) Reverse Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode
1000 10
TA = 125 °C
100
10 1
TA = 25 °C
0.1 0.1
0 20 40 60 80 100 0.01 0.1 1 10
Percent of Rated Peak Reverse Voltage (%) t - Heating Time (s)
Figure 4. Typical Reverse Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance
3.6 ± 0.2
30 ± 0.3
3.5 ± 0.2
3.2 ± 0.2
20 ± 0.3
11 ± 0.2
+
5
2.5 ± 0.2
17.5 ± 0.5
4 ± 0.2
2.2 ± 0.2
Document Number: 88645 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Jan-08 [email protected], [email protected], [email protected] 3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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therein, which apply to these products.
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document or by any conduct of Vishay.
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