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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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This document provides product specifications for the SavantIC Semiconductor 2SD1651 silicon NPN power transistor. It is a TO-3PML packaged transistor with a built-in damper diode, high breakdown voltage, and high-speed switching capabilities, intended for color TV horizontal output applications. Key specifications include an 800V collector-emitter sustaining voltage, 3-5V collector-emitter saturation voltage, 1.5V base-emitter saturation voltage, 10uA collector cut-off current, 1mA collector cut-off current, 40-130mA emitter cut-off current, 8 typical DC current gain, 3MHz transition frequency, and 2V diode forward voltage.

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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

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rudra_1
51 views4 pages
This document provides product specifications for the SavantIC Semiconductor 2SD1651 silicon NPN power transistor. It is a TO-3PML packaged transistor with a built-in damper diode, high breakdown voltage, and high-speed switching capabilities, intended for color TV horizontal output applications. Key specifications include an 800V collector-emitter sustaining voltage, 3-5V collector-emitter saturation voltage, 1.5V base-emitter saturation voltage, 10uA collector cut-off current, 1mA collector cut-off current, 40-130mA emitter cut-off current, 8 typical DC current gain, 3MHz transition frequency, and 2V diode forward voltage.

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This document provides product specifications for the SavantIC Semiconductor 2SD1651 silicon NPN power transistor. It is a TO-3PML packaged transistor with a built-in damper diode, high breakdown voltage, and high-speed switching capabilities, intended for color TV horizontal output applications. Key specifications include an 800V collector-emitter sustaining voltage, 3-5V collector-emitter saturation voltage, 1.5V base-emitter saturation voltage, 10uA collector cut-off current, 1mA collector cut-off current, 40-130mA emitter cut-off current, 8 typical DC current gain, 3MHz transition frequency, and 2V diode forward voltage.

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© All Rights Reserved
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Download as pdf or txt
51 views4 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

Uploaded by

rudra_1
This document provides product specifications for the SavantIC Semiconductor 2SD1651 silicon NPN power transistor. It is a TO-3PML packaged transistor with a built-in damper diode, high breakdown voltage, and high-speed switching capabilities, intended for color TV horizontal output applications. Key specifications include an 800V collector-emitter sustaining voltage, 3-5V collector-emitter saturation voltage, 1.5V base-emitter saturation voltage, 10uA collector cut-off current, 1mA collector cut-off current, 40-130mA emitter cut-off current, 8 typical DC current gain, 3MHz transition frequency, and 2V diode forward voltage.

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1651

DESCRIPTION
·With TO-3PML package
·Built-in damper diode
·High breakdown voltage
·High speed switching

APPLICATIONS
·For color TV horizontal output applications

PINNING

PIN DESCRIPTION

1 Base

2 Collector
Fig.1 simplified outline (TO-3PML) and symbol
3 Emitter

ABSOLUTE MAXIMUM RATINGS AT Tc=25


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

VEBO Emitter-base voltage Open collector 6 V

IC Collector current 5 A

PC Collector power dissipation TC=25 60 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1651

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 800 V

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 3.0 5.0 V

VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V

ICBO Collector cut-off current VCB=800V; IE=0 10 µA

ICES Collector cut-off current VCES=1500V; RBE=> 1.0 mA

IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA

hFE DC current gain IC=1A ; VCE=5V 8

fT Transition frequency IC=1A ; VCE=10V 3 MHz

VF Diode forward voltage IF=5A 2.0 V

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD1651

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)

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This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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