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    2N2905A Silicon PNP Transistor Small Signal Switching TO 39 Type Package

    Uploaded by

    Thomas Thomas
    This document provides specifications for the 2N2905A silicon PNP transistor in a TO-39 package. It lists absolute maximum ratings such as collector-emitter voltage up to 60V. Electrical characteristics are given for off and on conditions, including DC current gain of 75-450 and saturation voltages below 1.6V. Small-signal characteristics like current gain of 100 and capacitances below 30pF are specified. Turn-on and turn-off times are less than 45ns and 300ns respectively. Physical dimensions of the transistor package are also shown.

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    © All Rights Reserved
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    2N2905A Silicon PNP Transistor Small Signal Switching TO 39 Type Package

    Uploaded by

    Thomas Thomas
    30 views2 pages
    This document provides specifications for the 2N2905A silicon PNP transistor in a TO-39 package. It lists absolute maximum ratings such as collector-emitter voltage up to 60V. Electrical characteristics are given for off and on conditions, including DC current gain of 75-450 and saturation voltages below 1.6V. Small-signal characteristics like current gain of 100 and capacitances below 30pF are specified. Turn-on and turn-off times are less than 45ns and 300ns respectively. Physical dimensions of the transistor package are also shown.

    Original Title

    2N2905A-NTE

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    This document provides specifications for the 2N2905A silicon PNP transistor in a TO-39 package. It lists absolute maximum ratings such as collector-emitter voltage up to 60V. Electrical characteristics are given for off and on conditions, including DC current gain of 75-450 and saturation voltages below 1.6V. Small-signal characteristics like current gain of 100 and capacitances below 30pF are specified. Turn-on and turn-off times are less than 45ns and 300ns respectively. Physical dimensions of the transistor package are also shown.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    30 views2 pages

    2N2905A Silicon PNP Transistor Small Signal Switching TO 39 Type Package

    Uploaded by

    Thomas Thomas
    This document provides specifications for the 2N2905A silicon PNP transistor in a TO-39 package. It lists absolute maximum ratings such as collector-emitter voltage up to 60V. Electrical characteristics are given for off and on conditions, including DC current gain of 75-450 and saturation voltages below 1.6V. Small-signal characteristics like current gain of 100 and capacitances below 30pF are specified. Turn-on and turn-off times are less than 45ns and 300ns respectively. Physical dimensions of the transistor package are also shown.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N2905A

    Silicon PNP Transistor


    Small−Signal Switching
    TO−39 Type Package
    Absolute Maximum Ratings:
    Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
    Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
    Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
    Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
    Total Device Dissipation, PD
    TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
    TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W
    Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
    Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195C/W
    Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50C/W
    Lead Temperature (During Soldering, 1/16” from case, 60sec max), TL . . . . . . . . . . . . . . . . . +300C

    Electrical Characteristics: (TA = +25C unless otherwise specified)


    Parameter Symbol Test Conditions Min Typ Max Unit
    OFF Characteristics
    Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA 60 − − V
    Collector−Emitter Cutoff Current ICES VCE = 60V − − 1.0 A
    Collector−Base Cutoff Current ICBO VCB = 50V − − 10 nA
    VCB = 60V − − 10 A
    Emitter−Base Cutoff Current IEBO VEB = 5V − − 10 A
    VEB = 3.5V − − 50 nA
    ON Characteristics (Note 1)
    DC Current Gain hFE IC = 0.1mA, VCE = 10V 75 − −
    IC = 1.0mA, VCE = 10V 100 − 450
    IC = 10mA, VCE = 10V 100 − −
    IC = 150mA, VCE = 10V 100 − 300
    IC = 500mA, VCE = 10V 50 − −
    Collector−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA − − 0.4 V
    IC = 500mA, IB = 50mA − − 1.6 V
    Base−Emitter Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA − − 1.3 V
    IC = 500mA, IB = 50mA − − 2.6 V

    Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.


    Electrical Characteristics (Cont’d): TA = +25C unless otherwise specified)
    Parameter Symbol Test Conditions Min Typ Max Unit
    Small−Signal Characteristics
    Magnitude of Small Signal Current Gain |hfe| IC = 50mA, VCE = 20V, f = 100MHz 2.0 − −
    Small−Signal Current Gain hfe IC = 1mA, VCE = 10V, f = 1kHz 100 − −
    Output Capacitance Cobo VCB = 10V, IE = 0, 100kHz  f  1MHz − − 8.0 pF
    Input Capacitance Cibo VEB = 2V, IC = 0, 100kHz  f  1MHz − − 30 pF
    Switching Characteristics
    Turn−On Time ton − − 45 ns
    Turn=Off Time toff − − 300 ns

    .370 (9.39) Dia Max

    .355 (9.03) Dia Max

    .260
    (6.6)
    Max

    .500
    (12.7)
    Min

    .018 (0.45)

    Base
    Emitter
    Collector/Case

    45

    .031 (.793)

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