HW 5 Updated
HW 5 Updated
HW 5 Updated
EE457
Construct a dynamic NMOS gate for the function f =x⋅y +x⋅( z +w ). Do not simplify.
a) Draw a circuit schematic in Electric.
b) Provide a layout of the circuit using Electric. Use clock signal of 2GHz for LTSPICE.
c) Put Cload=5pF for the output capacitor and run LTSPICE with x=1, z=1 and w=1. The signal y
has clock pulse of 500MHz. Only print out 3 cycles.
d) Now try Cload = 1fF and run the same LTSPICE as in part c). Did you observe any differences in
your output waveform? Only print out 3 cycles.
e) Use IRSIM and provide the output waveform by creating your own input signals.
Assume that you are a design engineer and at a leading semiconductor company. You are requested to
analyze high-speed signals on a newly developed chip on a silicon substrate. Assume that all fabrication is
done through a conventional CMOS batch process. You are to analyze a signal interconnect length of 750
um with width of 75 um and thickness of 10um. The interconnect is made of aluminum. Calculate the
following: