AV1015 TO-92 Plastic-Encapsulate Transistors: Transistor PNP

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@vic AV1015

TO-92 Plastic-Encapsulate Transistors

AV1015 TRANSISTOR( PNP ) TO—92

1.EMITTER
FEATURES
2.COLLECTOR

Power dissipation
3.BASE
PCM : 0.4 W(Tamb=25℃)
Collector current
ICM : -0.15 A
1 2 3
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= -100 μA, IE=0 -50 V

Collector-emitter breakdown voltage V(BR)CEO Ic= -0. 1 mA, IB=0 -50 V

Emitter-base breakdown voltage V(BR)EBO IE= -100 μA, IC=0 -5 V

Collector cut-off current ICBO VCB= -50 V IE=0 -0.1 μA

Emitter cut-off current IEBO VEB= -5 V, IC=0 -0.1 μA

DC current gain hFE(1) VCE= -6 V, IC= -2mA 70 400

IC= -100mA, IB= -10


Collector-emitter saturation voltage VCE(sat) -0.3 V
mA
IC= -100 mA, I B=
Base-emitter saturation voltage VBE(sat) -1.1 V
-10m A

VCE= -10 V, IC= -1 mA


Transition frequency fT 80 MHz
f =30MHz

CLASSIFICATION OF hFE(1)
Rank O Y GR

Range 70-140 120-240 200-400

Copyright @vic Electronics Corp. 1 Website http://www.avictek.com


@vic AV1015

Copyright @vic Electronics Corp. 2 Website http://www.avictek.com


@vic AV1015

TO-92 PACKAGE OUTLINE DIMENSIONS

D D1

A1
A

C
E

b
φ
L

e
e1

Dimensions In Millimeters Dimensions In Inches


Symbol
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.400 4.700 0.173 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270TYP 0.050TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571

Ö 1.600 0.063
0.000 0.380 0.000 0.015

Copyright @vic Electronics Corp. 3 Website http://www.avictek.com

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