Diodes and Half-Wave Rectification: 1 Abstract
Diodes and Half-Wave Rectification: 1 Abstract
2 KEYWORDS
The initial task was to measure the forward Forward breakdown voltage after which
and reverse resistance of silicon and current exponentially grows with voltage
germanium diodes. From the theory, diodes increase starts at about 0.15 V
have high resistance whilst the reverse bias As we can see from the table of
and low resistance when they are forward germanium diode, its voltage and current are
bias. related with some function, not proportional.
With the increase of current, the voltage
increases and vice versa. For the reverse bias
case, there is no current flow. However,
Figure 2. Resistance test for forward and there is a theoretical breakdown voltage,
reverse bias diode approximately -100 volts, after which there
is a reverse current flow, usually followed
The aim of this task was to measure the by diode burning.
voltage as a function of current during the
forward bias, and the current as a function of
voltage during the reverse bias. First guess
refreshed from theory is that voltage has to
increase if the current increases. However, we
have to bear in mind, that in
this case current flows from anode to
cathode. For the opposite, there is no current
until breakdown voltage, i.e. reverse bias Figure 3. Waveforms of Vs(10Vpp) and Vo
case. (1K Ώ)
5 CONCLUSION