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Photo-Detectors (Aka Optical Detectors) : Fundamental Mechanism

This document discusses the key parameters and requirements for optical receivers and photodetectors. It outlines that optical receivers must have high sensitivity, fast response, low noise, compatible size, low bias voltage, and low cost. The main noise sources are shot noise and Johnson/thermal noise. Photodetectors convert optical signals back into electrical form by generating electron-hole pairs from absorbed photons. Commonly used photodetectors include p-n photodiodes, p-i-n photodiodes, and avalanche photodiodes.

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shruti soni
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40 views

Photo-Detectors (Aka Optical Detectors) : Fundamental Mechanism

This document discusses the key parameters and requirements for optical receivers and photodetectors. It outlines that optical receivers must have high sensitivity, fast response, low noise, compatible size, low bias voltage, and low cost. The main noise sources are shot noise and Johnson/thermal noise. Photodetectors convert optical signals back into electrical form by generating electron-hole pairs from absorbed photons. Commonly used photodetectors include p-n photodiodes, p-i-n photodiodes, and avalanche photodiodes.

Uploaded by

shruti soni
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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High sensitivity PERFORMANCE FIGURE OF MERIT Noise equivalent power

Fast response REQUIREMENTS PARAMETERS Detectivity (D)


Low noise (For ∆F= 1Hz) Specific detectivity (D*)=(area)1/2
Compatible size
Low bias voltage Shot noise
Low cost NOISE SOURCES
Johnson/ Thermal noise

Convert optical signal back OPTICAL


CHARACTERISTIC Quantum Efficiency (ղ )
into electrical form
RECEIVER = es generation rate/photon
Recovery of data transmitted PARAMETERS incident rate
through optical system = (Ip/9) / (Pin/hν)

PHOTO-DETECTORS Responsivity (Rd)


OPTICAL Fundamental Rd=Ip/Pin
Mechanism (aka Optical Detectors)
ABSORPTION Rise Time (Tr)
Tr=w 9(τtr+ τrc)
Based on creation of an electron
Bandwidth
hole pair on absorption of a photon
∆f= [2π (τtr+ τrc)]-1
(E=hν) ≥ Eg

COMMONLY USED IN
OPTICAL RECEIVERS

MSM
Based on the operation of reversed biased p-n
junctions PHOTODETECTOR
Simple design

Operation
Structure
Photon (E=hν) ≥ Eg absorption by
semiconductor in depletion region (large
opposing E-field)
Semi-conductor Formation of
Creation of e-n pair absorbing layer between es hole pairs
two metal electrodes on
Free es travel down the barrier (to absorption;
Formation

conduction band) and holes travel up the flow towards


barrier (to valence band) metal
of

contact
Photocurrebt Ip ∝ Pin resulting in
Schottky barrier at photo
each M-S interface current

p-n PHOTODIODE p-i-n PHOTODIODE AVALANCHE


PHOTODIODE
 Structure: highly doped p and n
 Structure: p+ipn+
contact layers and undoped
 Internal gain current (due to
absorbing layer
high field regions), Impact
 Larger depletion layer
ionization and avalanche
 Minimal τtr
effect
 Minimal thermal generation
current

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