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    Transistor 2n3904 Datasheet

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    Alex ZX
    This document provides specifications for the 2N3904 NPN silicon epitaxial planar transistor. Key details include: - It is intended for switching and amplifier applications and has a complementary PNP type 2N3906. - Packaging includes TO-226AA (TO-92) and SOT-23, with ratings up to 150°C junction temperature and -65°C to +150°C storage temperature. - Electrical characteristics include DC current gain of 100-300, gain-bandwidth product of 300MHz, and collector-emitter breakdown voltage of 40V.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Transistor 2n3904 Datasheet

    Uploaded by

    Alex ZX
    142 views2 pages
    This document provides specifications for the 2N3904 NPN silicon epitaxial planar transistor. Key details include: - It is intended for switching and amplifier applications and has a complementary PNP type 2N3906. - Packaging includes TO-226AA (TO-92) and SOT-23, with ratings up to 150°C junction temperature and -65°C to +150°C storage temperature. - Electrical characteristics include DC current gain of 100-300, gain-bandwidth product of 300MHz, and collector-emitter breakdown voltage of 40V.

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    Transistor 2n3904 datasheet

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    This document provides specifications for the 2N3904 NPN silicon epitaxial planar transistor. Key details include: - It is intended for switching and amplifier applications and has a complementary PNP type 2N3906. - Packaging includes TO-226AA (TO-92) and SOT-23, with ratings up to 150°C junction temperature and -65°C to +150°C storage temperature. - Electrical characteristics include DC current gain of 100-300, gain-bandwidth product of 300MHz, and collector-emitter breakdown voltage of 40V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    142 views2 pages

    Transistor 2n3904 Datasheet

    Uploaded by

    Alex ZX
    This document provides specifications for the 2N3904 NPN silicon epitaxial planar transistor. Key details include: - It is intended for switching and amplifier applications and has a complementary PNP type 2N3906. - Packaging includes TO-226AA (TO-92) and SOT-23, with ratings up to 150°C junction temperature and -65°C to +150°C storage temperature. - Electrical characteristics include DC current gain of 100-300, gain-bandwidth product of 300MHz, and collector-emitter breakdown voltage of 40V.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N3904

    New Product Vishay Semiconductors


    formerly General Semiconductor

    Small Signal Transistor (NPN)

    TO-226AA (TO-92)

    0.181 (4.6) 0.142 (3.6)


    Features
    min. 0.492 (12.5) 0.181 (4.6)

    • NPN Silicon Epitaxial Planar Transistor for


    switching and amplifier applications.
    • As complementary type, the PNP transistor
    2N3906 is recommended.
    • On special request, this transistor is also
    manufactured in the pin configuration TO-18.
    • This transistor is also available in the SOT-23 case
    with the type designation MMBT3904.

    Mechanical Data
    max. ∅
    0.022 (0.55) Case: TO-92 Plastic Package
    Weight: approx. 0.18g
    0.098 (2.5) Dimensions in inches
    and (millimeters) Packaging Codes/Options:
    E6/Bulk – 5K per container, 20K/box
    E7/4K per Ammo mag., 20K/box
    Bottom
    View

    Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

    Parameter Symbol Value Unit


    Collector-Emitter Voltage VCEO 40 V
    Collector-Base Voltage VCBO 60 V
    Emitter-Base Voltage VEBO 6.0 V
    Collector Current IC 200 mA
    TA = 25°C 625 mW
    Power Dissipation Ptot
    TC = 25°C 1.5 W
    Thermal Resistance Junction to Ambient Air RΘJA 250(1) °C/W
    Junction Temperature Tj 150 °C
    Storage Temperature Range TS –65 to +150 °C
    Note:
    (1) Valid provided that leads are kept at ambient temperature.

    Document Number 88113 www.vishay.com


    07-May-02 1
    2N3904
    Vishay Semiconductors
    formerly General Semiconductor

    Electrical Characteristics (T J = 25°C unless otherwise noted)

    Parameter Symbol Test Condition Min Typ Max Unit


    Collector-Base Breakdown Voltage V(BR)CBO IC = 10 µA, IE = 0 60 — — V
    (1)
    Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 40 — — V
    Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA, IC = 0 6 — — V
    IC = 10 mA, IB = 1 mA — — 0.2
    Collector Saturation Voltage VCEsat V
    IC = 50 mA, IB = 5 mA — — 0.3
    IC = 10 mA, IB = 1 mA — — 0.85
    Base Saturation Voltage VBEsat V
    IC = 50 mA, IB = 5 mA — — 0.95
    Collector-Emitter Cutoff Current ICEV VEB = 3 V, VCE = 30 V — — 50 nA
    Emitter-Base Cutoff Current IEBV VEB = 3 V, VCE = 30 V — — 50 nA
    VCE = 1 V, IC = 0.1 mA 40 — —
    VCE = 1 V, IC = 1 mA 70 — —
    DC Current Gain hFE VCE = 1 V, IC = 10 mA 100 300 — —
    VCE = 1 V, IC = 50 mA 60 — —
    VCE = 1 V, IC = 100 mA 30 — —
    VCE = 10 V, IC = 1 mA
    Input Impedance hie 1 — 10 kΩ
    f = 1 kHz
    VCE = 10 V, IC = 1 mA
    Voltage Feedback Ratio hre 0.5 • 10-4 — 8 • 10-4 —
    f = 1 kHz
    VCE = 20 V, IC = 10 mA
    Gain-Bandwidth Product fT 300 — — MHz
    f = 100 MHz
    Collector-Base Capacitance CCBO VCB = 5 V, f = 100 kHz — — 4 pF
    Emitter-Base Capacitance CEBO VCB = 0.5 V, f = 100 kHz — — 8 pF
    VCE = 10 V, I C = 1 mA,
    Small Signal Current Gain hfe 100 — 400 —
    f = 1 kHz
    VCE = 1 V, I C = 1 mA,
    Output Admittance hoe 1 — 40 µS
    f = 1 kHz
    VCE = 5 V, I C = 100 µA,
    Noise Figure NF — — 5 dB
    RG = 1 kΩ, f = 10...15000 kHz
    Delay Time (see fig. 1) td IB1 = 1 mA, IC = 10 mA — — 35 ns
    Rise Time (see fig. 1) tr IB1 = 1 mA, IC = 10 mA — — 35 ns
    –IB1 = IB2 = 1 mA
    Storage Time (see fig. 2) ts — — 200 ns
    IC = 10 mA
    –IB1 = IB2 = 1 mA
    Fall Time (see fig. 2) tf — — 50 ns
    IC = 10 mA

    Fig. 1: Test circuit for delay and rise time Fig. 2: Test circuit for storage and fall time
    * total shunt capacitance of test jig and * total shunt capacitance of test jig and
    connectors connectors

    www.vishay.com Document Number 88113


    2 07-May-02

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