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Mos Transistor: GS DS

The document discusses MOS transistors and contains questions about: 1) Key parameters like flat-band voltage, work function, threshold voltage components, and short channel effects 2) Calculating threshold voltage, drain current, and resistance for given transistor parameters 3) Explaining concepts like DIBL, velocity saturation, mobility degradation, and channel length modulation

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Himanshu Sahu
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206 views2 pages

Mos Transistor: GS DS

The document discusses MOS transistors and contains questions about: 1) Key parameters like flat-band voltage, work function, threshold voltage components, and short channel effects 2) Calculating threshold voltage, drain current, and resistance for given transistor parameters 3) Explaining concepts like DIBL, velocity saturation, mobility degradation, and channel length modulation

Uploaded by

Himanshu Sahu
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MOS TRANSISTOR

1.
a. What is the significance of flat-band voltage?

b. Define work function?

c. Explain the DIBL effect.

d. Explain each component of threshold voltage of a MOS transistor.

e. Given VGS=1.5V, VDS=2.5V. Find the region of operation for N-type Enhancement MOSFET?

f. The substrate bias coefficient  is ___________ in PMOS.

2. Consider a two terminal MOS structure on p-type substrate (With NA = 1016 cm-3). Calculate the flatband

voltage VFB of the structure, if it employs p+-poly gate (assume that the Fermi level is coincident with the

valence band). Assume that there are no oxide charges and electron affinity for Si is 4.15ev.

3. Consider a MOS technology for which tox = 8nm, VT = 0.7V and µn =450 cm2 /V-S. Find the value of VGS

required to cause the device to operate as a 1000Ω resistor for small value of VDS. Take W/L=10.

4. A particular enhancement MOSFET for which Vth=1V and kn' (W/L)=0.1mA/V2 is to be operated in the

saturation region. If Id is to be 0.2mA, find the VGS and minimum required VDS.

5. An pMOS has a gate oxide with a thickness of tox=120A0. The n-type bulk region is doped with ND =

8×1014 cm-3. Given that VTO=-0.55V and W/L=10. Find the device threshold voltage for V SB =2V.

6. Consider a MOS system with the following parameters: tox =2000A , ФGC= - 0.85 V, NA= 2.1015 cm-3, Q0X=

q ×2× 1011 C/cm2

(a) Determine the threshold voltage VTO under zero bias at room temperature (T = 300 K).

(b) Determine the type (p-type or n-type) and amount of channel implant required to

change the threshold voltage to 0.8V.

7. Determine the drain current for an enhancement type nMOS transistor for V G= 5V, VD = 4V, VS = 2V and

VB= 0V, if VTO=0.8V, |2F| = 0.58V, kn =20 µA/V2 and (W/L) = 8.

8. Find the drain current of an nMOS transistor for VGS= 2V and VDS=1.2V, if k n' = 25µA/V2, W/L=10 and

Vth=0.8V.
9. Write short notes on

a) Oxide capacitance

b) Velocity saturation

c) Mobility degradation.

10. For an nMOS transistor assume that k n' = 20µA/V2, W/L=5.0µm/0.5µm, VGS=5V and Vth=1V. For small

VDS, calculate RDS.

11. Calculate the threshold voltage for a pMOS transistor, if the substrate doping density N D = 1016 cm-3, gate

doping density ND = 1020 cm-3, Nox = 4×1010 cm-2, and gate oxide thickness tox = 0.1µm.

12. Calculate the required aspect ratios to achieve a transconductance of 1mA/V in an n-channel transistor with

saturation drain current of 200µA, if knʹ =120 µA/V2.

13. What is the concept of channel length modulation? What is the effect of this on the drain current of NMOS

transistor? Justify with proper output characteristic.

14. Calculate ID , for VG = 4V, VD = 4V ,VS = 2V and VB= 1V , for a n-channel MOS transistor which has

following parameters kn= 25 µA/V2, VT0 = 0.5V, λ= 0.05V-1 , γ = 0.2V1/2 and |2ΦF| =0.55V.

15. What are the short channel effects? Explain how it affects the threshold voltage of NMOS transistor.

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