08140h PDF
08140h PDF
08140h PDF
Advanced
Am27C512 Micro
512 Kilobit (65,536 x 8-Bit) CMOS EPROM Devices
DISTINCTIVE CHARACTERISTICS
■ Fast access time ■ Latch-up protected to 100 mA from –1 V to
— 55 ns VCC + 1 V
■ Low power consumption ■ High noise immunity
— 20 µA typical CMOS standby current ■ Versatile features for simple interfacing
■ JEDEC-approved pinout — Both CMOS and TTL input/output
compatibility
■ Single +5 V power supply
— Two line control functions
■ ±10% power supply tolerance available
■ Standard 28-pin DIP, PDIP, 32-pin TSOP, and
■ 100% Flashrite programming
PLCC packages
— Typical programming time of 8 seconds
GENERAL DESCRIPTION
The Am27C512 is a 512 K-bit ultraviolet erasable pro- controls, thus eliminating bus contention in a multiple
grammable read-only memory. It is organized as 64K bus microprocessor system.
words by 8 bits per word, operates from a single +5 V AMD’s CMOS process technology provides high speed,
supply, has a static standby mode, and features fast sin- low power, and high noise immunity. Typical power con-
gle address location programming. Products are avail- sumption is only 80 mW in active mode, and 100 µW in
able in windowed ceramic DIP packages as well as plas- standby mode.
tic one time programmable (OTP) PDIP, TSOP, and
PLCC packages. All signals are TTL levels, including programming sig-
nals. Bit locations may be programmed singly, in blocks,
Typically, any byte can be accessed in less than 55 ns, or at random. The Am27C512 supports AMD’s Flashrite
allowing operation with high-performance microproces- programming algorithm (100 µs pulses) resulting in a
sors without any WAIT states. The Am27C512 offers typical programming time of 8 seconds.
separate Output Enable (OE) and Chip Enable (CE)
BLOCK DIAGRAM
Data Outputs
VCC
DQ0–DQ7
VSS
Output Enable
OE/VPP Chip Enable Output
CE and Buffers
Prog Logic
Y Y
Decoder Gating
A0–A15
Address 524,288
Inputs X
Bit Cell
Decoder
Matrix
08140H-1
CONNECTION DIAGRAMS
Top View
DIP PLCC
A15
A13
A12
A14
VCC
DU
A7
A15 1 28 VCC
4 3 2 1 32 31 30
A12 2 27 A14
A6 5 29 A8
A7 3 26 A13
A5 6 28 A9
A6 4 25 A8 A4 7 27 A11
A5 5 24 A9 A3 8 26 NC
A4 6 23 A11 A2 9 25 OE (G) /VPP
A3 7 22 OE (G)/VPP A1 10 24 A10
A2 8 21 A10 A0 11 23 CE (E)
A1 9 20 CE (E) NC 12 22 DQ7
A0 10 19 DQ7 DQ0 13 21 DQ6
DQ0 11 18 DQ6 14 15 16 17 18 19 20
DQ1
DU
VSS
DQ5
DQ2
DQ3
DQ4
DQ1 12 17 DQ5
DQ2 13 16 DQ4
14 15 08140H-3
VSS DQ3
08140H-2
Notes:
1. JEDEC nomenclature is in parentheses.
TSOP*
OE/VPP 1 32 NC
A11 2 31 A10
A9 3 30 CE/PGM
A8 4 29 O7
A13 5 28 O6
NC 6 27 O5
A14 7 26 O4
VCC 8 25 O3
A15 9 24 VSS
NC 10 23 O2
A12 11 22 O1
A7 12 21 O0
A6 13 20 NC
A5 14 19 A0
A4 15 18 A1
A3 16 17 A2
08140H-4
*Contact local AMD sales office for package availability.
Standard Pinout
Am27C512 2-45
AMD
VSS = Ground
OE (G)/VPP
08140H-5
2-46 Am27C512
AMD
ORDERING INFORMATION
UV EPROM Products
AMD Standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of:
AM27C512 -55 D C B
OPTIONAL PROCESSING
Blank = Standard Processing
B = Burn-in
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended Commercial (–55°C to +125°C)
PACKAGE TYPE
D = 28-Pin Ceramic DIP (CDV028)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER
Am27C512
512 Kilobit (65,536 x 8-Bit) CMOS UV EPROM
Am27C512 2-47
AMD
ORDERING INFORMATION
OTP Products
AMD Standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of:
AM27C512 -70 P C
OPTIONAL PROCESSING
Blank = Standard Processing
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to + 85°C)
PACKAGE TYPE
P = 28-Pin Plastic DIP (PD 028)
J = 32-Pin Rectangular Plastic Leaded Chip
Carrier (PL 032)
E = 32-Pin TSOP (TS 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER
Am27C512
512 Kilobit (65,536 x 8-Bit) CMOS OTP EPROM
2-48 Am27C512
AMD
FUNCTIONAL DESCRIPTION
Erasing the Am27C512 program that Am27C512. A high-level CE input inhibits
the other Am27C512 devices from being programmed.
In order to clear all locations of their programmed con-
tents, it is necessary to expose the Am27C512 to an Program Verify
ultraviolet light source. A dosage of 15 W seconds/cm2 A verify should be performed on the programmed bits to
is required to completely erase an Am27C512. This determine that they were correctly programmed. The
dosage can be obtained by exposure to an ultraviolet verify should be performed with CE at VIL and OE/VPP
lamp—wavelength of 2537 A° —with intensity of
at VIL. Data should be verified tDV after the falling edge
12,000 µW/cm2 for 15 to 20 minutes. The Am27C512 of CE.
should be directly under and about one inch from the
source and all filters should be removed from the UV Auto Select Mode
light source prior to erasure. The auto select mode allows the reading out of a binary
It is important to note that the Am27C512 and similar code from an EPROM that will identify its manufacturer
devices will erase with light sources having wavelengths and type. This mode is intended for use by programming
shorter than 4000 A° . Although erasure times will be equipment for the purpose of automatically matching
much longer than with UV sources at 2537 A° , exposure the device to be programmed with its corresponding
to fluorescent light and sunlight will eventually erase the programming algorithm. This mode is functional in the
Am27C512 and exposure to them should be prevented 25°C ± 5°C ambient temperature range that is required
to realize maximum system reliability. If used in such an when programming the Am27C512.
environment, the package window should be covered To activate this mode, the programming equipment
by an opaque label or substance. must force 12.0 ± 0.5 V on address line A9 of the
Am27C512. Two identifier bytes may then be se-
Programming the Am27C512
quenced from the device outputs by toggling address
Upon delivery or after each erasure the Am27C512 has line A0 from VIL to VIH. All other address lines must be
all 524,288 bits in the “ONE” or HIGH state. “ZEROs” held at VIL during auto select mode.
are loaded into the Am27C512 through the procedure
of programming. Byte 0 (A0 = VIL) represents the manufacturer code, and
byte 1 (A0 = VIH), the device code. For the Am27C512,
The programming mode is entered when 12.75 V ± 0.25
these two identifier bytes are given in the Mode Select
V is applied to the OE/VPP and CE is at VIL.
Table. All identifiers for manufacturer and device codes
For programming, the data to be programmed is applied will possess odd parity, with the MSB (DQ7) defined as
8 bits in parallel to the data output pins. the parity bit.
The Flashrite algorithm reduces programming time by Read Mode
using 100 µs programming pulses and by giving each
address only as many pulses as is necessary in order to The Am27C512 has two control functions, both of which
reliably program the data. After each pulse is applied to must be logically satisfied in order to obtain data at the
a given address, the data in that address is verified. If outputs. Chip Enable (CE) is the power control and
the data does not verify, additional pulses are given until should be used for device selection. Output Enable
it verifies or the maximum is reached. This process is re- (OE/VPP) is the output control and should be used to
peated while sequencing through each address of the gate data to the output pins, independent of device se-
Am27C512. This part of the algorithm is done at lection. Assuming that addresses are stable, address
VCC = 6.25 V to assure that each EPROM bit is pro- access time (tACC) is equal to the delay from CE to out-
grammed to a sufficiently high threshold voltage. After put (tCE). Data is available at the outputs tOE after the fall-
the final address is completed, the entire EPROM mem- ing edge of OE/VPP, assuming that CE has been LOW
ory is verified at VCC = 5.25 V. and addresses have been stable for at least tACC–tOE.
Please refer to Section 6 for programming flow chart Standby Mode
and characteristics. The Am27C512 has a CMOS standby mode which re-
duces the maximum VCC current to 100 µA. It is placed in
Program Inhibit CMOS-standby when CE is at VCC ± 0.3 V. The
Programming of multiple Am27C512 in parallel with dif- Am27C512 also has a TTL-standby mode which re-
ferent data is also easily accomplished. Except for CE, duces the maximum VCC current to 1.0 mA. It is placed in
all like inputs of the parallel Am27C512 may be com- TTL-standby when CE is at VIH. When in standby mode,
mon. A TTL low-level program pulse applied to an the outputs are in a high-impedance state, independent
Am27C512 CE input and OE/VPP = 12.75 V ± 0.25 V, will of the OE input.
Am27C512 2-49
AMD
2-50 Am27C512
AMD
Am27C512 2-51
AMD
30 30
25 25
Supply Current
Supply Current
in mA
in mA
20 20
15 15
10 10
1 2 3 4 5 6 7 8 9 10 –75 –50 –25 0 25 50 75 100 125 150
Frequency in MHz Temperature in °C
Figure 1. Typical Supply Current Figure 2. Typical Supply Current
vs. Frequency vs. Temperature
VCC = 5.5 V, T = 25°C VCC = 5.5 V, f = 10 MHz
08140H-6 08140H-7
2-52 Am27C512
AMD
CAPACITANCE
Parameter Test TS 032 CDV028 PL 032 PD 028
Symbol Parameter Description Conditions Typ Max Typ Max Typ Max Typ Max Unit
Notes:
1. This parameter is only sampled and not 100% tested.
2. TA = +25°C, f = 1 MHz
Am27C512 2-53
AMD
2.7 kΩ
Device +5.0 V
Under
Test
CL Diodes = IN3064
6.2 kΩ or Equivalent
2.4 V 3V
2.0 V 2.0 V
Test Points 1.5 V Test Points 1.5 V
0.8 V 0.8 V
0.45 V 0V
Input Output Input Output
08140H-9
AC Testing: Inputs are driven at 2.4 V for a logic “1” AC Testing: Inputs are driven at 3.0 V for a logic “1”
and 0.45 V for a logic “0”. Input pulse and 0 V for a logic “0”. Input pulse rise and
rise and fall times are ≤ 20 ns. fall times are ≤ 20 ns for -55 device.
2-54 Am27C512
AMD
Must Be Will Be
Steady Steady
May Will Be
Change Changing
from H to L from H to L
May Will Be
Change Changing
from L to H from L to H
SWITCHING WAVEFORMS
2.4
2.0 2.0
Addresses Addresses Valid
0.8 0.8
0.45
CE
tCE
OE/VPP
tDF
tOE (Note 2)
tACC tOH
(Note 1)
High Z High Z
Output Valid Output
Notes: 08140H-10
1. OE/VPP may be delayed up to tACC–tOE after the falling edge of the addresses without impact on tACC.
2. tDF is specified from OE or CE, whichever occurs first.
Am27C512 2-55