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Examples of Semiconductor: 1. IG-NANA Wafers: Application

1. The document discusses 10 different types of semiconductor materials, including IG-NANA wafers, SOI wafers, compound semiconductors like gallium phosphide, and silicon carbide. 2. These semiconductor materials are used in a variety of applications such as memory devices, logic devices, optoelectronics, power devices, and sensors due to their electrical and thermal properties. 3. Other discussed semiconductors include lead sulfide, indium phosphide, and gallium arsenide, which find uses in early radio detectors, transistors operating at high frequencies, and RF devices respectively.

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107 views4 pages

Examples of Semiconductor: 1. IG-NANA Wafers: Application

1. The document discusses 10 different types of semiconductor materials, including IG-NANA wafers, SOI wafers, compound semiconductors like gallium phosphide, and silicon carbide. 2. These semiconductor materials are used in a variety of applications such as memory devices, logic devices, optoelectronics, power devices, and sensors due to their electrical and thermal properties. 3. Other discussed semiconductors include lead sulfide, indium phosphide, and gallium arsenide, which find uses in early radio detectors, transistors operating at high frequencies, and RF devices respectively.

Uploaded by

aldehyde123
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© © All Rights Reserved
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EXAMPLES OF SEMICONDUCTOR:

1. IG-NANA wafers

IG-NANA wafers (annealed wafers) can be used


in wide range of device processes, from high-
temperature processes to low-temperature
processes. This product can provide high device
performances at a reasonable cost. It can
enhance the "getter effect" with the presence of
highly-dense and highly uniformed BMD in the
bulk.

Application:

 Substrates for memory devices, logic devices, etc.

2. SOI (Silicon On Insulator) wafers

SOI wafers, with the structure having insulated


oxide film under active silicon layer, are
promising semiconductor material for leading
edge devices such as high speed and low power
consumption LSI, smart sensors, smart power
devices and MEMS.

Application:

 High speed/low power/low voltage LSI


 Radiation-hardened circuits
 Smart power devices
 Smart sensors

3. Compound Semiconductor
Gallium phosphide (GaP), gallium arsenide
phosphide (GaAsP) and aluminum gallium
indium phosphide (AlGaInP) products are
used in light emitting diodes and lasers in
the optoelectronics field. These materials
possess unique functions that cannot be
found in silicon semiconductors.
Application:

 For visible light, infrared ray, functional use etc.

4. Junction coating resins


Junction coating resins help to improve the
reliability of semiconductor devices. They
provide electrical protection of
semiconductor chips, improve moisture-
resistance, reduce mechanical stress, and
prevent software error of VLSI.

Application:
 Surface coating materials for semiconductor elements
 Circuit protection, sealing and other uses for optical devices and flat
panel display panels

5. Epoxy molding compounds


These encapsulating materials provide low
stress, low alpha-ray property and high
thermal conductivity. They are also
environment-friendly.

Application:
 D-RAM and other LSI molding, full pack molding for power devices

6. ADMAFINE
ADMAFINE is true spherical shape ultra-fine
particulates produced using a special
process of oxidize metallic powder.

Application:
 Filler material for semiconductor
enclosure applications
 Filler material for precision resin molding applications
7. Silicon Carbide
Silicon carbide finds uses in a number of
applications. It is often used in power
devices where its losses are significantly
lower and operating temperatures can be
higher than those of silicon based devices. Silicon carbide has a
breakdown capability which is about ten times that of silicon itself.
Forms of silicon carbide were types of semiconductor material that were
used with some early forms of yellow and blue LEDs.

8. Lead Sulfide
Used as the mineral galena, this
semiconductor material was used in the
very early radio detectors known as 'Cat's
Whiskers' where a point contact was made
with the tin wire onto the galena to provide
rectification of the signals.

9. Indium Phosphide
Indium phosphide (InP) is a binary
semiconductor composed of indium and
phosphorus. It has a face-centered cubic
(zincblend) crystal structure, identical to that
of GaAs and most of the III-V semiconductors.
It was usws with indium gallium arsenide to
make a record breaking pseudomorphic
heterojunction bipolar transistor that could operate at 604 GHz.

10. Gallium Arsenide


Gallium arsenide is the second most widely
used type of semiconductor after silicon. It
is widely used in high performance RF
devices where its high electron mobility is
utilised. It is also used as substrate for
other III-V semiconductors, e.g. InGaAs
and GaInNAs. However it is a brittle
material and has a lower hole mobility than
Silicon which makes applications such as P-
type CMOS transistors not feasible. It is
also relatively difficult to fabricate and this increases the costs of GaAs
devices
KEYWORDS:
BMD – Bulk micro defect
LSI – Large scale integration
MEMS – microelectromechanical system; micromachines
VLSI – very large scale integration
D-RAM – dynamic random access memory

REFERENCES:
 https://www.shinetsu.co.jp/en/materials/semiconductors.html
 https://www.radio-
electronics.com/info/data/semicond/semiconductor/semiconductor-
materials-types-list.php
 http://maltiel-
consulting.com/Semiconductor_Technology_Acronyms_List_maltiel_con
sulting.htm
 https://en.wikipedia.org/wiki/Indium_phosphide

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