MMBTH10LT1,

MMBTH10−4LT1
Preferred Devices

VHF/UHF Transistor
NPN Silicon
• Device Marking: 3EM
Device Marking: http://onsemi.com

Features
COLLECTOR
• Pb−Free Package May be Available. The G−Suffix Denotes a 3
Pb−Free Lead Finish
1
BASE
MAXIMUM RATINGS
Rating Symbol Value Unit 2
EMITTER
Collector-Emitter Voltage VCEO 25 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 3.0 Vdc
3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit 1
Total Device Dissipation PD 2
FR−5 Board (Note 1)
TA = 25°C 225 mW CASE 318
Derate above 25°C 1.8 mW/°C SOT−23
Thermal Resistance, RθJA 556 °C/W STYLE 6
Junction to Ambient (Note 1)
Total Device Dissipation PD
Alumina Substrate (Note 2)
TA = 25°C 300 mW ORDERING INFORMATION
Derate above 25°C 2.4 mW/°C
Device Package Shipping†
Thermal Resistance, RθJA 417 °C/W
Junction to Ambient (Note 2) MMBTH10LT1 SOT−23 3000/Tape & Reel
Junction and Storage TJ, Tstg −55 to °C MMBTH10LT1G SOT−23 3000/Tape & Reel
Temperature Range +150 (Pb−Free)

1. FR−5 = 1.0 x 0.75 x 0.062 in. MMBTH10−4LT1 SOT−23 3000/Tape & Reel
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

 Semiconductor Components Industries, LLC, 2003 1 Publication Order Number:

December, 2003 − Rev. 2 MMBTH10LT1/D
 MMBTH10LT1, MMBTH10−4LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage V(BR)CEO 25 − − Vdc
(IC = 1.0 mAdc, IB = 0)

Collector−Base Breakdown Voltage V(BR)CBO 30 − − Vdc

(IC = 100 µAdc, IE = 0)

Emitter−Base Breakdown Voltage V(BR)EBO 3.0 − − Vdc

(IE = 10 µAdc, IC = 0)

Collector Cutoff Current ICBO − − 100 nAdc

(VCB = 25 Vdc, IE = 0)

Emitter Cutoff Current IEBO − − 100 nAdc

(VEB = 2.0 Vdc, IC = 0)

ON CHARACTERISTICS
DC Current Gain hFE −
(IC = 4.0 mAdc, VCE = 10 Vdc) MMBTH10LT1 60 − −
MMBTH10−4LT1 120 − 240
Collector−Emitter Saturation Voltage VCE(sat) − − 0.5 Vdc
(IC = 4.0 mAdc, IB = 0.4 mAdc)

Base−Emitter On Voltage VBE − − 0.95 Vdc

(IC = 4.0 mAdc, VCE = 10 Vdc)

SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) MMBTH10LT1 650 − −
MMBTH10−4LT1 800 − −
Collector−Base Capacitance Ccb − − 0.7 pF
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Common−Base Feedback Capacitance Crb − − 0.65 pF

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Collector Base Time Constant rb′Cc − − 9.0 ps

(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)

http://onsemi.com
2
 MMBTH10LT1, MMBTH10−4LT1

TYPICAL CHARACTERISTICS

COMMON−BASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yib, INPUT ADMITTANCE
80 0

70 gib
y ib , INPUT ADMITTANCE (mmhos)

−
10
60
−
20
50

jb ib (mmhos)
−
b ib 1000 MHz
40 −
30

30 700
−
40
20 400 200 100
−
50
10

0 −
60
100 200 300 400 500 700 1000 0 10 20 30 40 50 60 70 80
f, FREQUENCY (MHz) gib (mmhos)
Figure 1. Rectangular Form Figure 2. Polar Form

yfb, FORWARD TRANSFER ADMITTANCE

y ib , FORWARD TRANSFER ADMITTANCE (mmhos)

70 60
bfb 400
60 200
50 50 600
100
40
700
−
g fb
30 40
jb fb (mmhos)

20
10 30
1000 MHz
0
−
10 20
−
20
−
30 10
100 200 300 400 500 700 1000 70 60 50 40 30 20 10 0 −
10 −
20 −
30
f, FREQUENCY (MHz) gfb (mmhos)
Figure 3. Rectangular Form Figure 4. Polar Form

http://onsemi.com
3
 MMBTH10LT1, MMBTH10−4LT1

TYPICAL CHARACTERISTICS

COMMON−BASE y PARAMETERS versus FREQUENCY

(VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25°C)
yrb, REVERSE TRANSFER ADMITTANCE
y rb , REVERSE TRANSFER ADMITTANCE (mmhos)

5.0 0
100
4.0 −
1.0 200
MPS H11

3.0 400

jb rb (mmhos)
−
2.0
−brb
2.0 −brb
−
3.0
700
MPS H10
1.0 −
4.0
−grb 1000 MHz
0 −
5.0
100 200 300 400 500 700 1000 −2.0 −1.8 −1.2 −0.8 −0.4 0 0.4 0.8 1.2 1.6 2.0
f, FREQUENCY (MHz) grb (mmhos)

Figure 5. Rectangular Form Figure 6. Polar Form

yob, OUTPUT ADMITTANCE

10 10
1000 MHz
9.0
yob, OUTPUT ADMITTANCE (mmhos)

8.0 8.0
7.0 700
6.0 6.0
jb ob(mmhos)

5.0 bob
4.0 4.0 400
3.0
200
2.0 2.0
gob
1.0 100
0 0
100 200 300 400 500 700 1000 0 2.0 4.0 6.0 8.0 10
f, FREQUENCY (MHz) gob (mmhos)

Figure 7. Rectangular Form Figure 8. Polar Form

http://onsemi.com
4
 MMBTH10LT1, MMBTH10−4LT1

PACKAGE DIMENSIONS

SOT−23
(TO−236AB)
CASE 318−08
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
A IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L 4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
3 INCHES MILLIMETERS
B S DIM MIN MAX MIN MAX
1 2 A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
V G D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
C K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
H S 0.0830 0.1039 2.10 2.64
D J V 0.0177 0.0236 0.45 0.60
K
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR

SOLDERING FOOTPRINT*

0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035

0.8
0.031
SCALE 10:1
inches
mm 

Figure 9. SOT−23

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com
5
 MMBTH10LT1, MMBTH10−4LT1

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Order Literature: http://www.onsemi.com/litorder
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your
Email: [email protected] Phone: 81−3−5773−3850 local Sales Representative.

http://onsemi.com MMBTH10LT1/D
6
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.