SSM40N03P

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low gate charge BVDSS 30V

Simple drive requirement R DS(ON) 17mΩ
Fast switching ID 40A
G
D
S TO-220
Description D

Power MOSFETs from Silicon Standard provide the

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness. G
S
The TO-220 package is widely preferred for commercial and
industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits.

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage ± 20 V
ID @ TC=25°C Continuous Drain Current, VGS @ 10V 40 A
ID @ TC=100°C Continuous Drain Current, VGS @ 10V 30 A
1
IDM Pulsed Drain Current 169 A
PD @ TC=25°C Total Power Dissipation 50 W
Linear Derating Factor 0.4 W/°C
TSTG Storage Temperature Range -55 to 150 °C
TJ Operating Junction Temperature Range -55 to 150 °C

Thermal Data
Symbol Parameter Value Unit
Rthj-c Thermal Resistance Junction-case Max. 2.5 °C/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 °C/W

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 SSM40N03P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
∆ BV DSS/∆ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.037 - V/°C
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A - 14 17 mΩ
VGS=4.5V, ID=16A - 20 23 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=20A - 26 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=24V,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA
2
Qg Total Gate Charge ID=20A - 17 - nC
Qgs Gate-Source Charge VDS=24V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 10 - nC
2
td(on) Turn-on Delay Time VDS=15V - 7.2 - ns
tr Rise Time ID=20A - 60 - ns
td(off) Turn-off Delay Time RG=3.3Ω ,VGS=10V - 22.5 - ns
tf Fall Time RD=0.75Ω - 10 - ns
Ciss Input Capacitance VGS=0V - 800 - pF
Coss Output Capacitance VDS=25V - 380 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 133 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 40 A
1
ISM Pulsed Source Current ( Body Diode ) - - 169 A
2
VSD Forward On Voltage Tj=25°C, IS=40A, VGS=0V - - 1.3 V

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

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 SSM40N03P

150

o
T C =25 C V G =10V T C =150 o C V G =10V

150
V G =8.0V V G =8.0V

ID , Drain Current (A)

ID , Drain Current (A)

100
V G =6.0V
100
V G =6.0V

50

50 V G =4.0V V G =4.0V

V G =3.0V
V G =3.0V

0 0
0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 6 7 8 9 10

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

28 1.80

I D = 2 0A I D =20A
26

T C =25 o C 1.60 V G =10V

24

1.40
Normalized RDS(ON)

22
RDSON (mΩ )

20 1.20

18
1.00

16

0.80
14

12 0.60
3 4 5 6 7 8 9 10 11 -50 0 50 100 150

V GS (V) o
T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

vs. Junction Temperature

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 SSM40N03P

50 60

45

50
40

35
ID , Drain Current (A)

40

30

PD (W)
25 30

20

20
15

10
10

0 0
25 50 75 100 125 150 0 50 100 150

o o
T c , Case Temperature ( C) T c ,Case Temperature ( C)

Fig 5. Maximum Drain Current vs. Fig 6. Typical Power Dissipation

Case Temperature

1000 1

DUTY=0.5
Normalized Thermal Response (R thjc)

0.2
100

10us
0.1
ID (A)

0.1
0.05
100us
PDM
0.02
SINGLE PULSE
10 t
0.01
1ms T

10ms Duty factor = t/T

Peak Tj = P DM x Rthjc + TC
o
T c =25 C
Single Pulse 100ms
1 0.01
1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS (V)
t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

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 SSM40N03P

f=1.0MHz
16 10000

Id=20A
14
V D =16V
VGS , Gate to Source Voltage (V)

12 V D =20V
V D =24V
10

C (pF)
8 1000 Ciss

Coss
4

2
Crss

0 100
0 5 10 15 20 25 30 35 40 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS (V)

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

100 3

10
T j = 150 o C
2

T j = 25 o C
VGS(th) (V)
IS (A)

0.1

0.01 0
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150

V SD (V) T j , Junction Temperature ( o C )

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature

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 SSM40N03P

VDS
RD 90%

VDS TO THE
D OSCILLOSCOPE

0.5x RATED VDS

RG G

10%
+ S
10 V VGS
VGS
-

td(on) tr td(off) tf

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

VG

VDS

TO THE QG
D OSCILLOSCOPE
5V
0.8 x RATED VDS
G QGS QGD

S VGS
+
1~ 3 mA
-
IG ID

Charge Q

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.

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