PD -2.

340

HFA15PB60
HEXFRED Ultrafast, Soft Recovery Diode
TM

Features VR = 600V
• Ultrafast Recovery
• Ultrasoft Recovery VF(typ.)* = 1.3V
• Very Low IRRM IF(AV) = 15A
• Very Low Qrr
Qrr (typ.)= 80nC
• Guaranteed Avalanche
• Specified at Operating Conditions IRRM (typ.) = 4.0A
Benefits trr(typ.) = 19ns
• Reduced RFI and EMI di(rec)M/dt (typ.)* = 160A/µs
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA15PB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in TO-247AC
performance which is unsurpassed by any rectifier previously available. With (Modified)
basic ratings of 600 volts and 15 amps continuous current, the HFA15PB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15PB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
Absolute Maximum Ratings
Parameter Max. Units
VR Cathode-to-Anode Voltage 600 V
IF @ T C = 25°C Continuous Forward Current
IF @ T C = 100°C Continuous Forward Current 15
IFSM Single Pulse Forward Current 150 A
IFRM Maximum Repetitive Forward Current 60
IAR Maximum Repetitive Avalanche Current 2.0
PD @ TC = 25°C Maximum Power Dissipation 74
W
PD @ TC = 100°C Maximum Power Dissipation 29
TJ Operating Junction and
-55 to +150 C
TSTG Storage Temperature Range

* 125°C

4/15/97
HFA15PB60
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 ––– ––– V IR = 100µA
––– 1.3 1.7 IF = 15A
VFM Max Forward Voltage ––– 1.5 2.0 V IF = 30A See Fig. 1
––– 1.2 1.6 IF = 15A, T J = 125°C
––– 1.0 10 VR = VR Rated See Fig. 2
I RM Max Reverse Leakage Current µA
––– 400 1000 TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance ––– 25 50 pF VR = 200V See Fig. 3
Measured lead to lead 5mm from
LS Series Inductance ––– 12 ––– nH
package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time ––– 19 ––– IF = 1.0A, dif /dt = 200A/µs, VR = 30V
trr1 See Fig. 5, 10 ––– 42 60 ns TJ = 25°C
trr2 ––– 74 120 TJ = 125°C I F = 15A
IRRM1 Peak Recovery Current ––– 4.0 6.0 TJ = 25°C
A
IRRM2 See Fig. 6 ––– 6.5 10 TJ = 125°C V R = 200V
Qrr1 Reverse Recovery Charge ––– 80 180 TJ = 25°C
nC
Qrr2 See Fig. 7 ––– 220 600 TJ = 125°C dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current ––– 188 ––– TJ = 25°C
A/µs
di(rec)M/dt2 During tb See Fig. 8 ––– 160 ––– TJ = 125°C

Thermal - Mechanical Characteristics

Parameter Min. Typ. Max. Units
Tlead‚ Lead Temperature –––– –––– 300 °C
RθJC Thermal Resistance, Junction to Case –––– –––– 1.7
RθJAƒ Thermal Resistance, Junction to Ambient –––– –––– 40 K/W
RθCS„ Thermal Resistance, Case to Heat Sink –––– 0.25 ––––
–––– 6.0 –––– g
Wt Weight
–––– 0.21 –––– (oz)
6.0 –––– 12 Kg-cm
Mounting Torque
5.0 –––– 10 lbf•in

 L=100µH, duty cycle limited by max TJ

‚ 0.063 in. from Case (1.6mm) for 10 sec
ƒ Typical Socket Mount
„ Mounting Surface, Flat, Smooth and Greased
 HFA15PB60
100 10000
TJ = 150°C

Reverse Current - IR (µA)

1000

100
TJ = 125°C

10
Instantaneous Forward Current - I F (A)

0.1
TJ = 150°C TJ = 25°C
A
TJ = 125°C 0.01
10 0 100 200 300 400 500 600
T = 25°C
J
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
Junction Capacitance -CT (pF)

TJ = 25°C

A
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
ForwardVoltage
Forward VoltageDrop
Drop- -VVFM (V)
FM(V)

Fig. 1 - Maximum Forward Voltage Drop 10

A

vs. Instantaneous Forward Current 10 100 1000

Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Response (Z thJC )

1 D = 0.50

0.20

0.10
P DM
0.05
0.1
t1
0.02
0.01 SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics

HFA15PB60
100 25
I F = 30A VR = 200V
TJ = 125°C
I F = 15A TJ = 25°C
I F = 5.0A
80 20
I F = 30A
I F = 15A
I F = 5.0A
trr- (ns)

60 15

Irr- ( A)
40 10

20 5

VR = 200V
TJ = 125°C
TJ = 25°C
A A
0 0
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt

800 10000
VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C

600
IF = 30A
I F = 15A
di (rec) M/dt- (A /µs)

I F = 30A
IF = 5.0A
Qrr- (nC)

I F = 15A
400 1000
IF = 5.0A

200

A A
0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. di f/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt
 HFA15PB60

t rr
IF
ta tb
0
REVERSE RECOVERY CIRCUIT
4
Q rr
VR = 200V 2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.01 Ω
0.75 I RRM
L = 70µH
1
D.U.T. di f /dt

1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
D through zero crossing and I RRM
dif/dt t rr X IRRM
ADJUST G IRFP250 2. IRRM - Peak reverse recovery current Qrr =
2
3. trr - Reverse recovery time measured
S from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current

Fig. 9 - Reverse Recovery Parameter Test Fig. 10 - Reverse Recovery Waveform and
Circuit Definitions

L = 100µH I L(PK)

HIGH-SPEED
SWITCH
DUT
FREE-WHEEL
Rg = 25 ohm
DIODE +
CURRENT DECAY
Vd = 50V TIME
MONITOR
V (AVAL)

V R(RATED)

Fig. 11 - Avalanche Test Circuit and Waveforms

HFA15PB60

Conforms to JEDEC Outline TO-247AC MODIFIED

Dimensions in millimeters and inches

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http://www.irf.com/ Data and specifications subject to change without notice. 4/97