Pc28f256m29ewl PDF

128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory
Features
Micron StrataFlash Embedded Memory

P/N – PC28F128G18xx
P/N – PC28F00AG18xx
Features • Power
– Core voltage: 1.7 V - 2.0 V
• High-Performance Read, Program and Erase – I/O voltage: 1.7 V - 2.0 V
– 96 ns initial read access – Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– 108 MHz with zero wait-state synchronous burst – Deep Power-Down mode: 2 μA (typ)
reads: 7 ns clock-to-data output – Automatic Power Savings mode
– 133 MHz with zero wait-state synchronous burst – 16-word synchronous-burst read current: 23 mA
reads: 5.5 ns clock-to-data output (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
– 8-, 16-, and continuous-word synchronous-burst • Software
Reads – Micron® Flash data integrator (FDI) optimized
– Programmable WAIT configuration – Basic command set (BCS) and extended com-
– Customer-configurable output driver impedance mand set (ECS) compatible
– Buffered Programming: 2.0 μs/Word (typ), 512- – Common Flash interface (CFI) capable
Mbit 65 nm • Security
– Block Erase: 0.9 s per block (typ) – One-time programmable (OTP) space
– 20 μs (typ) program/erase suspend 64 unique factory device identifier bits
• Architecture 2112 user-programmable OTP bits
– 16-bit wide data bus – Absolute write protection: V PP = GND
– Multi-Level Cell Technology – Power-transition erase/program lockout
– Symmetrically-Blocked Array Architecture – Individual zero latency block locking
– 256-Kbyte Erase Blocks – Individual block lock-down
– 1-Gbit device: Eight 128-Mbit partitions • Density and packaging
– 512-Mbit device: Eight 64-Mbit partitions – 128Mb, 256Mb, 512Mbit, and 1-Gbit
– 256-Mbit device: Eight 32-Mbit partitions – Address-data multiplexed and non-multiplexed
– 128-Mbit device: Eight 16-Mbit partitions interfaces
– Read-While-Program and Read-While-Erase – 64-Ball Easy BGA
– Status Register for partition/device status
– Blank Check feature
• Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
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128_256_512_65nm_g18.pdf - Rev. E 8/11 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
This datasheet has been downloaded from http://www.digchip.com at this page

Features
Contents
General Description ......................................................................................................................................... 8
Functional Overview ........................................................................................................................................ 8
Configuration and Memory Map ....................................................................................................................... 9
Device ID ....................................................................................................................................................... 12
Package Dimensions ....................................................................................................................................... 13
Signal Assignments ......................................................................................................................................... 14
Signal Descriptions ......................................................................................................................................... 15
Bus Interface .................................................................................................................................................. 16
Reset .......................................................................................................................................................... 16
Standby ..................................................................................................................................................... 16
Output Disable ........................................................................................................................................... 16
Asynchronous Read .................................................................................................................................... 17
Synchronous Read ...................................................................................................................................... 17
Burst Wrapping .......................................................................................................................................... 17
End-of-Wordline Delay ............................................................................................................................... 18
Write .......................................................................................................................................................... 19
Command Definitions .................................................................................................................................... 20
Status Register ................................................................................................................................................ 23
Clear Status Register ................................................................................................................................... 24
Read Configuration Register ........................................................................................................................... 25
Programming the Read Configuration Register ............................................................................................ 26
Extended Configuration Register ..................................................................................................................... 27
Output Driver Control ................................................................................................................................ 27
Programming the Extended Configuration Register ...................................................................................... 28
Read Operations ............................................................................................................................................. 29
Read Array ................................................................................................................................................. 29
Read ID ...................................................................................................................................................... 29
Read CFI .................................................................................................................................................... 30
Read Status Register ................................................................................................................................... 30
WAIT Operation ......................................................................................................................................... 31
Programming Modes ...................................................................................................................................... 32
Control Mode ............................................................................................................................................. 32
Object Mode .............................................................................................................................................. 33
Program Operations ....................................................................................................................................... 37
Single-Word Programming .......................................................................................................................... 37
Buffered Programming ............................................................................................................................... 38
Buffered Enhanced Factory Programming ................................................................................................... 38
Erase Operations ............................................................................................................................................ 41
BLOCK ERASE ............................................................................................................................................ 41
SUSPEND and RESUME Operations ................................................................................................................ 42
SUSPEND Operation .................................................................................................................................. 42
RESUME Operation .................................................................................................................................... 43
BLANK CHECK Operation .............................................................................................................................. 44
Block Lock ..................................................................................................................................................... 45
One-Time Programmable Operations .............................................................................................................. 47
Programming OTP Area .............................................................................................................................. 49
Reading OTP Area ....................................................................................................................................... 49
Global Main-Array Protection ......................................................................................................................... 50
Dual Operation .............................................................................................................................................. 51
Power and Reset Specifications ....................................................................................................................... 52
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Features
Initialization .............................................................................................................................................. 52
Power-Up and Down .................................................................................................................................. 52
Reset .......................................................................................................................................................... 52
Automatic Power Saving ............................................................................................................................. 54
Power Supply Decoupling ........................................................................................................................... 54
Electrical Specifications .................................................................................................................................. 55
Electrical Specifications – DC Current and Voltage Characteristics and Operating Conditions ............................ 56
Electrical Specifications – AC Characteristics and Operating Conditions ........................................................... 60
AC Test Conditions ..................................................................................................................................... 60
AC Read Specifications ................................................................................................................................... 62
AC Read Specifications (CLK-Latching, 133 MHz) ........................................................................................ 62
AC Read Timing .......................................................................................................................................... 63
AC Write Specifications ................................................................................................................................... 72
Electrical Specifications – Program/Erase Characteristics ................................................................................. 79
Common Flash Interface ................................................................................................................................ 80
READ CFI Structure Output ........................................................................................................................ 80
CFI ID String .............................................................................................................................................. 81
System Interface Information ...................................................................................................................... 81
Device Geometry Definition ....................................................................................................................... 82
Primary Micron-Specific Extended Query .................................................................................................... 85
Flowcharts ..................................................................................................................................................... 91
AADM Mode ................................................................................................................................................. 108
AADM Feature Overview ............................................................................................................................ 108
AADM Mode Enable (RCR[4] = 1) ............................................................................................................... 108
Bus Cycles and Address Capture ................................................................................................................. 108
WAIT Behavior .......................................................................................................................................... 108
Asynchronous READ and WRITE Cycles ..................................................................................................... 109
Asynchronous READ Cycles ....................................................................................................................... 109
Asynchronous WRITE Cycles ..................................................................................................................... 111
Synchronous READ and WRITE Cycles ....................................................................................................... 112
Synchronous READ Cycles ......................................................................................................................... 112
Synchronous WRITE Cycles ....................................................................................................................... 115
System Boot .............................................................................................................................................. 115
Ordering Information .................................................................................................................................... 116
Revision History ............................................................................................................................................ 117
Rev. E – 8/11 .............................................................................................................................................. 117
Rev. D – 5/11 ............................................................................................................................................. 117
Rev. C – 2/11 .............................................................................................................................................. 117
Rev. B – 12/10 ............................................................................................................................................ 117
Rev. A – 12/10 ............................................................................................................................................ 117
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Features
List of Figures
Figure 1: 64-Ball Easy BGA (8mm x 10mm x 1.2mm) ....................................................................................... 13
Figure 2: 64-Ball Easy BGA (Top View, Balls Down) ......................................................................................... 14
Figure 3: Main Array Word Lines .................................................................................................................... 18
Figure 4: Wrap/No-Wrap Example ................................................................................................................. 18
Figure 5: End-of-Wordline Delay .................................................................................................................... 18
Figure 6: Two-Cycle Command Sequence ....................................................................................................... 20
Figure 7: Single-Cycle Command Sequence .................................................................................................... 20
Figure 8: READ Cycle Between WRITE Cycles ................................................................................................. 20
Figure 9: Illegal Command Sequence ............................................................................................................. 21
Figure 10: Configurable Programming Regions: Control Mode and Object Mode .............................................. 33
Figure 11: Configurable Programming Regions: Control Mode and Object Mode Segments .............................. 35
Figure 12: BLOCK LOCK Operations ............................................................................................................... 46
Figure 13: OTP Area Map ............................................................................................................................... 48
Figure 14: V PP Supply Connection Example .................................................................................................... 50
Figure 15: RESET Operation Waveforms ......................................................................................................... 53
Figure 16: AC Input/Output Reference Waveform ........................................................................................... 60
Figure 17: Transient Equivalent Testing Load Circuit ....................................................................................... 60
Figure 18: Clock Input AC Waveform .............................................................................................................. 61
Figure 19: Asynchronous Page-Mode Read (Non-MUX) .................................................................................. 64
Figure 20: Synchronous 8- or 16-Word Burst Read (Non-MUX) ........................................................................ 65
Figure 21: Synchronous Continuous Misaligned Burst Read (Non-MUX) ......................................................... 66
Figure 22: Synchronous Burst with Burst Interrupt Read (Non-MUX) .............................................................. 67
Figure 23: Asynchronous Single-Word Read .................................................................................................... 68
Figure 24: Synchronous 8- or 16-Word Burst Read (A/D MUX) ......................................................................... 69
Figure 25: Synchronous Continuous Misaligned Burst Read (A/D MUX) .......................................................... 70
Figure 26: Synchronous Burst with Burst-Interrupt (AD-Mux) ......................................................................... 70
Figure 27: Write Timing ................................................................................................................................. 73
Figure 28: Write to Write (Non-Mux) .............................................................................................................. 74
Figure 29: Async Read to Write (Non-Mux) ..................................................................................................... 74
Figure 30: Write to Async Read (Non-Mux) ..................................................................................................... 75
Figure 31: Sync Read to Write (Non-Mux) ....................................................................................................... 75
Figure 32: Write to Sync Read (Non-Mux) ....................................................................................................... 76
Figure 33: Write to Write (AD-Mux) ................................................................................................................ 76
Figure 34: Async Read to Write (AD-Mux) ....................................................................................................... 77
Figure 35: Write to Async Read (AD-Mux) ....................................................................................................... 77
Figure 36: Sync Read to Write (AD-Mux) ......................................................................................................... 78
Figure 37: Write to Sync Read (AD-Mux) ......................................................................................................... 78
Figure 38: Word Program Procedure ............................................................................................................... 91
Figure 39: Word Program Full Status Check Procedure .................................................................................... 92
Figure 40: Program Suspend/Resume Procedure ............................................................................................ 93
Figure 41: Buffer Programming Procedure ...................................................................................................... 95
Figure 42: Buffered Enhanced Factory Programming (BEFP) Procedure ........................................................... 97
Figure 43: Block Erase Procedure ................................................................................................................... 99
Figure 44: Block Erase Full Status Check Procedure ........................................................................................ 100
Figure 45: Erase Suspend/Resume Procedure ................................................................................................ 101
Figure 46: Block Lock Operations Procedure .................................................................................................. 103
Figure 47: Protection Register Programming Procedure ................................................................................. 104
Figure 48: Protection Register Programming Full Status Check Procedure ....................................................... 105
Figure 49: Blank Check Procedure ................................................................................................................. 106
Figure 50: Blank Check Full Status Check Procedure ...................................................................................... 107
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Features
Figure 51: AADM Asynchronous READ Cycle (Latching A[MAX:0]) ................................................................. 110
Figure 52: AADM Asynchronous READ Cycle (Latching A[15:0] only) .............................................................. 110
Figure 53: AADM Asynchronous WRITE Cycle (Latching A[MAX:0]) ................................................................ 111
Figure 54: AADM Asynchronous WRITE Cycle (Latching A[15:0] only) ............................................................ 112
Figure 55: AADM Synchronous Burst READ Cycle (ADV# De-asserted Between Address Cycles) ....................... 113
Figure 56: AADM Synchronous Burst READ Cycle (ADV# Not De-asserted Between Address Cycles) ................ 114
Figure 57: AADM Synchronous Burst READ Cycle (Latching A[15:0] only) ....................................................... 114
Figure 58: Part Number Chart for G18 Components ....................................................................................... 116
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Features
List of Tables
Table 1: Main Array Memory Map – 128Mb, 256Mb ........................................................................................... 9
Table 2: Main Array Memory Map – 512Mb, 1Gb ............................................................................................. 10
Table 3: Device ID Codes ............................................................................................................................... 12
Table 4: Signal Descriptions ........................................................................................................................... 15
Table 5: Bus Control Signals ........................................................................................................................... 16
Table 6: Command Set .................................................................................................................................. 21
Table 7: Status Register Bit Definitions (Default Value = 0080h) ....................................................................... 23
Table 8: CLEAR STATUS REGISTER Command Bus Cycles ............................................................................... 24
Table 9: Read Configuration Register Bit Definitions (Default Value = BFCFh) .................................................. 25
Table 10: Supported Clock Frequencies .......................................................................................................... 25
Table 11: PROGRAM READ CONFIGURATION REGISTER Bus Cycles .............................................................. 26
Table 12: Extended Configuration Register Bit Definitions (Default Value = 0004h) ........................................... 27
Table 13: Output Driver Control Characteristics .............................................................................................. 27
Table 14: Program Extended Configuration Register Command Bus Cycles ...................................................... 28
Table 15: READ MODE Command Bus Cycles ................................................................................................. 29
Table 16: Device Information ......................................................................................................................... 30
Table 17: WAIT Behavior Summary – Non-MUX ............................................................................................. 31
Table 18: WAIT Behavior Summary – AD MUX ................................................................................................ 31
Table 19: Programming Region Next State ...................................................................................................... 36
Table 20: PROGRAM Command Bus Cycles .................................................................................................... 37
Table 21: BEFP Requirements and Considerations .......................................................................................... 39
Table 22: ERASE Command Bus Cycle ............................................................................................................ 41
Table 23: Valid Commands During Suspend ................................................................................................... 42
Table 24: SUSPEND and RESUME Command Bus Cycles ................................................................................ 43
Table 25: BLANK CHECK Command Bus Cycles ............................................................................................. 44
Table 26: BLOCK LOCK Command Bus Cycles ................................................................................................ 45
Table 27: Block Lock Configuration ................................................................................................................ 46
Table 28: Program OTP Area Command Bus Cycles ......................................................................................... 47
Table 29: Dual Operation Restrictions ............................................................................................................ 51
Table 30: Power Sequencing ........................................................................................................................... 52
Table 31: Reset Specifications ........................................................................................................................ 53
Table 32: Absolute Maximum Ratings ............................................................................................................. 55
Table 33: Operating Conditions ...................................................................................................................... 55
Table 34: DC Current Characteristics and Operating Conditions ...................................................................... 56
Table 35: DC Voltage Characteristics and Operating Conditions ...................................................................... 59
Table 36: AC Input Requirements ................................................................................................................... 60
Table 37: Test Configuration Load Capacitor Values for Worst Case Speed Conditions ...................................... 60
Table 38: Capacitance .................................................................................................................................... 61
Table 39: AC Read Specifications (CLK-Latching, 133 MHz), V CCQ = 1.7V to 2.0V ............................................... 62
Table 40: AC Write Specifications ................................................................................................................... 72
Table 41: Program/Erase Characteristics ........................................................................................................ 79
Table 42: Example of CFI Output (x16 Device) as a Function of Device and Mode ............................................. 80
Table 43: CFI Database: Addresses and Sections ............................................................................................. 80
Table 44: CFI ID String ................................................................................................................................... 81
Table 45: System Interface Information .......................................................................................................... 81
Table 46: Device Geometry ............................................................................................................................ 82
Table 47: Block Region Map Information ........................................................................................................ 83
Table 48: Primary Micron-Specific Extended Query ........................................................................................ 85
Table 49: One Time Programmable (OTP) Space Information .......................................................................... 86
Table 50: Burst Read Informaton .................................................................................................................... 87
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Features
Table 51: Partition and Block Erase Region Information .................................................................................. 88

Table 52: Partition Region 1 Information: Top and Bottom Offset/Address ....................................................... 88
Table 53: Partition and Erase Block Map Information ...................................................................................... 90
Table 54: AADM Asynchronous and Latching Timings ................................................................................... 109
Table 55: AADM Asynchronous Write Timings ............................................................................................... 111
Table 56: AADM Synchronous Timings .......................................................................................................... 112
Table 57: Valid Line Items ............................................................................................................................. 116
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General Description
General Description
Micron's 65nm device is the latest generation of StrataFlash® wireless memory featur-
ing flexible, multiple-partition, dual-operation architecture. The device provides high-
performance, asynchronous read mode and synchronous-burst read mode using 1.8V
low-voltage, multilevel cell (MLC) technology.
The multiple-partition architecture enables background programming or erasing to oc-
cur in one partition while code execution or data reads take place in another partition.
This dual-operation architecture also allows two processors to interleave code opera-
tions while PROGRAM and ERASE operations take place in the background. The multi-
ple partitions allow flexibility for system designers to choose the size of the code and
data segments.
The device is manufactured using 65nm process technologies and is available in indus-
try-standard chip scale packaging.
Functional Overview
This device provides high read and write performance at low voltage on a 16-bit data
bus. The multi-partition architecture provides read-while-write and read-while-erase
capability, with individually erasable memory blocks sized for optimum code and data
storage.
This device is offered in densities from 128Mb to 1Gb. The device supports synchronous
burst reads up to 133 MHz using enhanced CLK latching for all densities on 45nm.
Upon initial power-up or return from reset, the device defaults to asynchronous read
mode. Configuring the read configuration register enables synchronous burst mode
reads. In synchronous burst mode, output data is synchronized with a user-supplied
clock signal. In continuous-burst mode, a data read can traverse partition boundaries. A
WAIT signal simplifies synchronizing the CPU to the memory.
Designed for low-voltage applications, the device supports READ operations with V CC at
1.8V, and ERASE and PROGRAM operations with V PP at 1.8V or 9.0V. V CC and V PP can be
tied together for a simple, ultra low-power design. In addition to voltage flexibility, a
dedicated V PP connection provides complete data protection when V PP is less than
VPPLK.
A status register provides status and error conditions of ERASE and PROGRAM opera-
tions.
One-time programmable (OTP) area enables unique identification that can be used to
increase security. Additionally, the individual block lock feature provides zero-latency
block locking and unlocking to protect against unwanted program or erase of the array.
The device offers power-savings features, including automatic power savings mode,
standby mode, and deep power-down mode. For power savings, the device automati-
cally enters APS following a READ cycle. Standby is initiated when the system deselects
the device by de-asserting CE#. Deep power-down provides the lowest power consump-
tion and is enabled by programming in the extended configuration register. DPD is ini-
tiated by asserting the DPD pin.
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Configuration and Memory Map

The device features a symmetrical block architecture. The main array of the 128Mb de-
vice is divided into eight 16Mb partitions. Each partition is divided into eight 256KB
blocks (8 x 8 = 64 blocks).
The main array of the 256Mb device is divided into eight 32Mb partitions. Each parti-
tion is divided into sixteen 256KB blocks (8 x 16 = 128 blocks).
The main array of the 512Mb device is divided into eight 64Mb partitions. Each parti-
tion is divided into thirty-two 256KB blocks (8 x 32 = 256 blocks).
The main array of the 1Gb device is divided into eight 128Mb partitions. Each partition
is divided into sixty-four 256KB blocks (8 x 64 = 512 blocks).
Each block is divided into as many as 256 1KB programming regions. Each region is
divided into as many as thirty-two 32-byte segments
Table 1: Main Array Memory Map – 128Mb, 256Mb
128Mb 256Mb
Size Size
Partition (Mb) Block # Address Range (Mb) Block # Address Range
7 16 63 07E0000-07FFFFF 32 127 FF0000-FFFFFF
. . . .
. . . .
. . . .
56 0700000-071FFFF 112 FD0000-FDFFFF
6 16 55 06E0000-06FFFFF 32 111 0DE0000-0DFFFFF
. . . .
. . . .
. . . .
48 0600000-061FFFF 96 0C00000-0C1FFFF
5 16 47 05E0000-05FFFFF 32 95 0BE0000-0BFFFFF
. . . .
. . . .
. . . .
40 0500000-051FFFF 80 0A00000-0A1FFFF
4 16 39 04E0000-04FFFFF 32 79 09E0000-09FFFFF
. . . .
. . . .
. . . .
32 0400000-041FFFF 64 0800000-081FFFF
3 16 31 03E0000-03FFFFF 32 63 07E0000-07FFFFF
. . . .
. . . .
. . . .
24 0300000-031FFFF 48 0600000-061FFFF
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Table 1: Main Array Memory Map – 128Mb, 256Mb (Continued)
128Mb 256Mb
Size Size
2 16 23 02E0000-02FFFFF 32 47 05E0000-05FFFFF
. . . .
. . . .
. . . .
16 0200000-021FFFF 32 0400000-041FFFF
1 16 15 01E0000-01FFFFF 32 31 03E0000-03FFFFF
. . . .
. . . .
. . . .
8 0100000-011FFFF 16 0200000-021FFFF
0 16 7 00E0000-00FFFFF 32 15 01E0000-01FFFFF
. . . .
. . . .
. . . .
0 0000000-001FFFF 0 0000000-001FFFF
Table 2: Main Array Memory Map – 512Mb, 1Gb
512Mb 1Gb
Size Size
7 64 255 1FE0000-1FFFFFF 128 511 3FE0000-3FFFFFF
. . . .
. . . .
. . . .
224 1C00000-1C1FFFF 448 3800000-381FFFF
6 64 223 1BE0000-1BFFFFF 128 447 37E0000-37FFFFF
. . . .
. . . .
. . . .
192 1800000-181FFFF 384 3000000-301FFFF
5 64 191 17E0000-17FFFFF 128 383 2FE0000-2FFFFFF
. . . .
. . . .
. . . .
160 1400000-141FFFF 320 2800000-281FFFF
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Table 2: Main Array Memory Map – 512Mb, 1Gb (Continued)
512Mb 1Gb
Size Size
4 64 159 13E0000-13FFFFF 128 319 27E0000-27FFFFF
. . . .
. . . .
. . . .
128 1000000-101FFFF 256 2000000-201FFFF
3 64 127 0FE0000-0FFFFFF 128 255 1FE0000-1FFFFFF
. . . .
. . . .
. . . .
96 0300000-031FFFF 192 1800000-181FFFF
2 64 95 0BE0000-0BFFFFF 128 191 17E0000-17FFFFF
. . . .
. . . .
. . . .
64 0800000-081FFFF 128 1000000-101FFFF
1 64 63 07E0000-07FFFFF 128 127 0FE0000-0FFFFFF
. . . .
. . . .
. . . .
32 0400000-041FFFF 64 0800000-081FFFF
0 64 31 03E0000-03FFFFF 128 63 07E0000-07FFFFF
. . . .
. . . .
. . . .
0 0000000-001FFFF 0 0000000-001FFFF
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Device ID
Device ID
To order parts or to obtain a data sheet, contact the factory.
Table 3: Device ID Codes
Density Product Device Identifier Code (Hex)

128Mb (45nm, 65nm, Litho) Non-MUX 8900
A/D MUX 8903
256Mb (45nm, 65nm, 90nm, Litho) Non-MUX 8901
A/D MUX 8904
512Mb (45nm, 65nm, 90nm, Litho) Non-MUX 8887E
A/D MUX 8881
1024Mb (45nm, 65nm, Litho) Non-MUX 88B0
A/D MUX 88B1
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Package Dimensions
Package Dimensions
Figure 1: 64-Ball Easy BGA (8mm x 10mm x 1.2mm)
0.78 TYP
Seating
plane
0.1
Ball A1 ID
1.00 TYP 1.5 ±0.1
64X Ø0.43 ±0.1 8 7 6 5 4 3 2 1 Ball A1 ID
0.5 ±0.1
A
B
C
D
8 ±0.1
E
F
1.00 TYP
G
H
10 ±0.1
1.20 MAX
Note: 1. All dimensions are in millimeters.
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Signal Assignments
Signal Assignments
Figure 2: 64-Ball Easy BGA (Top View, Balls Down)
1 2 3 4 5 6 7 8
A
A1 A6 A8 VPP A13 VCC A18 A22
B
A2 VSS A9 CE# A14 A25 A19 A26
C
A3 A7 A10 A12 A15 WP# A20 A21
D
A4 A5 A11 RST# VCCQ VCCQ A16 A17
E
DQ8 DQ1 DQ9 DQ3 DQ4 CLK DQ15 RFU
F
RFU DQ0 DQ10 DQ11 DQ12 ADV# WAIT OE#
G
A23 RFU DQ2 VCCQ DQ5 DQ6 DQ14 WE#
H
RFU VSS VCC VSS DQ13 VSS DQ7 A24
Notes: 1. A1 is the least significant address bit.

2. B6 is A25 for 512Mb densities and above; otherwise, it is a no connect (NC).
3. B8 is A26 for 1Gb density; otherwise, it is a no connect (NC).
4. G1 is A23 for 128Mb density and above; otherwise, it is a no connect (NC).
5. H8 is A24 for 256Mb density and above; otherwise, it is a no connect (NC).
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Signal Descriptions
Signal Descriptions
Table 4: Signal Descriptions
Symbol Type Description

Non-MUX
A[MAX:1] Input Address inputs: Address inputs for all READ/WRITE cycles.
DQ[15:0] Input/Output Data: Data or command inputs during WRITE cycles; data, status, or device informa-
tion outputs during READ cycles.
A/D MUX
A[MAX:16] Input Address inputs: Upper address inputs for all READ/WRITE cycles.
ADQ[15:0] Input/Output Address or data: Lower address inputs during the address phase for all READ/WRITE
cycles; data or command inputs during WRITE cycles; data, status, or device informa-
tion outputs during READ cycles.
Control Signals
CE# Input Chip enable: LOW true input. When LOW, CE# selects the die; when HIGH, CE# dese-
lects the die and places it in standby.
OE# Input Output enable: LOW true input. Must be LOW for READs and HIGH for WRITEs.
WE# Input Write enable: LOW true input. Must be LOW for WRITEs and HIGH for READs.
CLK Input Clock: Synchronizes burst READ operations with the host controller.
ADV# Input Address valid: LOW true input. When LOW, ADV# enables address inputs. For syn-
chronous burst READs, address inputs are latched on the rising edge.
WP# Input Write protect: LOW true input. When LOW, WP# enables block lock down; when
HIGH, WP# disables block lock down.
RST# Input Reset: LOW true input. When LOW, RST# inhibits all operations; must be HIGH for
normal operations.
VPP Input Erase/program voltage: Enables voltage for PROGRAM and ERASE operations. Array
contents cannot be altered when VPP is at or below VPPLK.
WAIT Output WAIT: Configurable HIGH or LOW true output. When asserted, WAIT indicates
DQ[15:0] is invalid; when de-asserted, WAIT indicates DQ[15:0] is valid.
VCC Power Core power: Supply voltage for core circuits. All operations are inhibited when VCC is
at or below VLKO.
VCCQ Power I/O power: Supply voltage for all I/O drivers. All operations are inhibited when VCCQ is
at or below VLKOQ.
VSS Power Logic ground: Core logic ground return. Connect all VSS balls to system ground; do
not float any VSS balls.
VSSQ Power I/O ground: I/O driver ground return. Connect all VSSQ balls to system ground; do not
float any VSSQ balls.
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Bus Interface
Bus Interface
The bus interface uses CMOS-compatible address, data, and bus control signals for all
bus WRITE and bus READ operations. The address signals are input only, the data sig-
nals are input/output (I/O), and the bus control signals are input only. The address in-
puts are used to specify the internal device location during bus READ and bus WRITE
operations. The data I/Os carry commands, data, or status to and from the device. The
control signals are used to select and deselect the device, indicate a bus READ or bus
WRITE operation, synchronize operations, and reset the device.
Do not float any inputs. All inputs must be driven or terminated for proper device oper-
ation. Some features may use additional signals. See Signal Descriptions for descrip-
tions of these signals.
The following table shows the logic levels that must be applied to the bus control signal
inputs for the bus operations listed.
Table 5: Bus Control Signals

X = Don’t Care; High = VIH; Low = VIL
Bus Operations RST# CE# CLK ADV# OE# WE# Address Data I/O
Reset Low X X X X X X High-Z
Standby High High X X X X X High-Z
Output Disable High X X X High X X High-Z
Asynchronous Read High Low X Low Low High Valid Output
Synchronous Read High Low Running Toggle Low High Valid Output
Write High Low X X High Low Valid Input
Reset
RST# LOW places the device in reset, where device operations are disabled; inputs are
ignored, and outputs are placed in High-Z.
Any ongoing ERASE or PROGRAM operation will be aborted and data at that location
will be indeterminate.
RST# HIGH enables normal device operations. A minimum delay is required before the
device is able to perform a bus READ or bus WRITE operation. See AC specifications.
Standby
RST# HIGH and CE# HIGH place the device in standby, where all other inputs are ignor-
ed, outputs are placed in High-Z (independent of the level placed on OE#), and power
consumption is substantially reduced.
Any ongoing ERASE or PROGRAM operation continues in the background and the de-
vice draws active current until the operation has finished.
Output Disable
When OE# is deasserted with CE# asserted, the device outputs are disabled. Output pins
are placed in a high-impedance state. WAIT is deasserted in AD-muxed devices and
driven to High-Z in non-multiplexed devices.
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Bus Interface
Asynchronous Read
For RCR15 = 1 (default), CE# LOW and OE# LOW place the device in asynchronous bus
read mode:
• RST# and WE# must be held HIGH; CLK must be tied either HIGH or LOW.
• Address inputs must be held stable throughout the access, or latched with ADV#.
• ADV# must be held LOW or can be toggled to latch the address.
• Valid data is output on the data I/Os after tAVQV, tELQV, tVLQV, or tGLQV, whichever is
satisfied last.
Asynchronous READ operations are independent of the voltage level on V PP.
For asynchronous page reads, subsequent data words are output tAPA after the least sig-
nificant address bit(s) are toggled: 16-word page buffer, A[3:0].
Synchronous Read
For RCR15 = 0, CE# LOW, OE# LOW, and ADV# LOW place the device in synchronous
bus read mode:
• RST# and WE# must be held HIGH.
• CLK must be running.
• The first data word is output tCHQV after the latency count has been satisfied.
• For array reads, the next address data is output tCHQV after valid CLK edges until the
burst length is satisfied.
• For nonarray reads, the same address data is output tCHQV after valid CLK edges until
the burst length is satisfied.
The address for synchronous read operations is latched on the ADV# rising edge or the
first rising CLK edge after ADV# low, whichever occurs first for devices that support up
to 108 MHz. For devices that support up to 133 MHz, the address is latched on the last
CLK edge when ADV# is low.
Burst Wrapping
Data stored within the memory array is arranged in rows or word lines. During synchro-
nous burst reads, data words are sensed in groups from the array. The starting address
of a synchronous burst read determines which word within the wordgroup is output
first, and subsequent words are output in sequence until the burst length is satisfied.
The setting of the burst wrap bit (RCR3) determines whether synchronous burst reads
will wrap within the wordgroup or continue on to the next wordgroup.
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Bus Interface
Figure 3: Main Array Word Lines
16-Word sense group
16-bit data word
0x000030 0 1 2 3 4 5 6 7 8 9 A B C D E F
0x000020 0 1 2 3 4 5 6 7 8 9 A B C D E F
0x000010 0 1 2 3 4 5 6 7 8 9 A B C D E F Word
lines
0x000000 0 1 2 3 4 5 6 7 8 9 A B C D E F
Address
256 bits Bit lines
Figure 4: Wrap/No-Wrap Example
16-bit data word
2 3 4 5 6 7 8 9 A B
2 3 4 5 6 7 8 9 A B
Wrap
No wrap
End-of-Wordline Delay
Output delays may occur when the burst sequence crosses the first end-of-wordline
boundary onto the start of the next wordline.
No delays occur if the starting address is sense-group aligned or if the burst sequence
never crosses a wordline boundary. However, if the starting address is not sense-group
aligned, the worst-case end-of-wordline delay is one clock cycle less than the initial ac-
cess latency count used. This delay occurs only once during the burst access. WAIT in-
forms the system of this delay when it occurs.
Figure 5: End-of-Wordline Delay
0x000020 0 1 2 3 4 5 6 7 8 9 A B C D E F
0x000010 0 1 2 3 4 5 6 7 8 9 A B C D E F
EOWL delay
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Bus Interface
Write
CE# LOW and WE# LOW place the device in bus write mode, where RST# and OE# must
be HIGH, CLK and ADV# are ignored, input data and address are sampled on the rising
edge of WE# or CE#, whichever occurs first.
During a write operation in muxed devices, address is latched during the rising edge of
ADV# OR CE# whichever occurs first and Data is latched during the rising edge of WE#
OR CE# whichever occurs first.
Bus WRITE cycles are asynchronous only.
The following conditions apply when a bus WRITE cycle occurs immediately before, or
immediately after, a bus READ cycle:
• When transitioning from a bus READ cycle to a bus WRITE cycle, CE# or ADV# must
toggle after OE# goes HIGH.
• When in synchronous read mode (RCR15 = 0; burst clock running), bus WRITE cycle
timings tVHWL (ADV# HIGH to WE# LOW), tCHWL (CLK HIGH to WE# LOW), and
tWHCH (WE# HIGH to CLK HIGH) must be met.
• When transitioning from a bus WRITE cycle to a bus READ cycle, CE# or ADV# must
toggle after WE# goes HIGH.
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Command Definitions
Command Definitions
Commands are written to the device to control all operations. Some commands are
two-cycle commands that use a SETUP and a CONFIRM command; other commands
are single-cycle commands that use only a SETUP command followed by a data READ
cycle or data WRITE cycle. Valid commands and their associated command codes are
shown in the table below.
The device supports READ-While-WRITE and READ-While-ERASE operations with bus
cycle granularity, not command granularity. That is, both bus WRITE cycles of a two-cy-
cle command do not need to occur as back-to-back bus WRITE cycles to the device;
READ cycles may occur between the two write WRITE cycles of a two-cycle command.
However, a WRITE operation must not occur between the two bus WRITE cycles of a
two-cycle command; this will cause a command sequence error (SR[7,5,4] = 1).
Due to the large buffer size of devices, the system interrupt latency may be impacted
during the buffer fill phase of a buffered programming operation. Please refer to the rel-
evant Application Note to implement a software solution for your system
Figure 6: Two-Cycle Command Sequence
Address Partition A Partition A Partition B
WE#
OE#
D/Q Setup Confirm 00FFh
Figure 7: Single-Cycle Command Sequence
Address Partition A Partition A Partition B
WE#
OE#
D/Q Setup 00FFh
Figure 8: READ Cycle Between WRITE Cycles
Address Partition A Partition B Partition A
WE#
OE#
D/Q Setup Read data Confirm
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Command Definitions
Figure 9: Illegal Command Sequence
Address Partition A Partition B Partition A Partition A
WE#
OE#
D/Q Setup Write data Confirm Status
Table 6: Command Set
Code
Command (Setup/Confirm) Description
Register Operations
PROGRAM READ CONFIGURA- 0060h/0003h Programs the read configuration register. The desired read con-
TION REGISTER figuration register value is placed on the address bus, and writ-
ten to the read configuration register when the CONFIRM com-
mand is issued.
PROGRAM EXTENDED CONFIGU- 0060h/0004h Programs the extended configuration register. The desired ex-
RATION REGISTER tended configuration register value is placed on the address bus,
and written to the read configuration register when the CON-
FIRM command is issued.
PROGRAM OTP AREA 00C0h Programs OTP area and OTP lock registers. The desired register
data is written to the addressed register on the next WRITE cy-
cle.
CLEAR STATUS REGISTER 0050h Clears all error bits in the status register.
Read Mode Operations
READ ARRAY 00FFh Places the addressed partition in read array mode. Subsequent
reads outputs array data.
READ STATUS REGISTER 0070h Places the addressed partition in read status mode. Subsequent
reads outputs status register data.
READ ID 0090h Places the addressed partition in read ID mode. Subsequent
reads from specified address offsets output unique device infor-
mation.
READ CFI 0098h Places the addressed partition in read CFI mode. Subsequent
reads from specified address offsets output CFI data.
Array Programming Operations
SINGLE-WORD PROGRAM 0041h Programs a single word into the array. Data is written to the ar-
ray on the next WRITE cycle. The addressed partition automati-
cally switches to read status register mode.
BUFFERED PROGRAM 00E9h/00D0h Initiates and executes a BUFFERED PROGRAM operation. Addi-
tional bus READ/WRITE cycles are required between the and
confirm commands to properly perform this operation. The ad-
dressed partition automatically switches to read status register
mode.
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Command Definitions
Table 6: Command Set (Continued)
Code
Command (Setup/Confirm) Description
BUFFERED ENHANCED FACTORY 0080h/00D0h Initiates and executes a BUFFERED ENHANCED FACTORY PRO-
PROGRAM GRAM operation. Additional bus READ/WRITE cycles are re-
quired after the CONFIRM command to properly perform this
operation. The addressed partition automatically switches to
read status register mode.
Block Erase Operations
BLOCK ERASE 0020h/00D0h Erases a single, addressed block. The ERASE operation commen-
ces when the CONFIRM command is issued. The addressed parti-
tion automatically switches to read status register mode.
Security Operations
Lock Block 0060h/0001h Sets the lock bit of the addressed block.
Unlock Block 0060h/00D0h Clears the lock bit of the addressed block.
Lock-Down Block 0060h/002Fh Sets the lock-down bit of the addressed block.
Other Operations
SUSPEND 00B0h Initiates a suspend of a PROGRAM or BLOCK ERASE operation
already in progress when issued to any device address
SR[6] = 1 indicates erase suspend
SR[2] = 1 indicates program suspend
RESUME 00D0h Resumes a suspended PROGRAM or BLOCK ERASE operation
when issued to any device address. A program suspend nested
within an erase suspend is resumed first.
BLANK CHECK 00BCh/00D0h Performs a blank check of an addressed block. The addressed
partition automatically switches to read status register mode.
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Status Register
Status Register
The status register is a 16-bit, read-only register that indicates device status, region sta-
tus, and operating errors. Upon power-up or exit from reset, the status register defaults
to 0080h (device ready, no errors).
The status register has status bits and error bits. Status bits are set and cleared by the
device; error bits are only set by the device. Error bits are cleared using the CLEAR STA-
TUS REGISTER command or by resetting the device.
To read from the status register, first issue the READ STATUS REGISTER command and
then read from the device. Note that some commands automatically switch from read
mode to read status register mode.
Table 7: Status Register Bit Definitions (Default Value = 0080h)
Bit Name Description

15:10 Reserved Reserved for future use; these bits will always be set to zero
9:8 Partition program er- SR[9]/SR[8]
ror 0 0 = Region program successful
1 0 = Region program error: Attempted write with object data to control
mode region
0 1= Region-program error: Attempted rewrite to object mode region
1 1 = Region-program error: Attempted write using illegal command
(SR[4] will also be set along with SR[8,9] for the above error conditions
7 Device status 0 = Device is busy; SR[9,8,6:1] are invalid, SR[0] is valid
1 = Device is ready; SR[9:8], SR[6:1] are valid
6 Erase suspend 0 = Erase suspend not in effect
1 = Erase suspend in effect
5:4 Erase error/blank check SR[5]/SR[4]
error 0 0 = PROGRAM or ERASE operation successful
program error 0 1 = Program error: operation aborted
(command sequence 1 0 = Erase error: Operation aborted; Blank check error: Operation failed
error) 1 1 = Command sequence error: Command aborted
3 VPP error 0 = VPP within acceptable limits during program or erase
1 = VPP < VPPLK during program or erase; operation aborted
2 Program suspend 0 = Program suspend not in effect
1 = Program suspend in effect
1 Block lock error 0 = Block not locked during program or erase; operation successful
1 = Block locked during program or erase; operation aborted
0 Partition status SR[7]/SR[0]
0 0 = Active PROGRAM or ERASE operation in addressed partition
BEFP: Program or verify complete, or ready for data
0 1 = Active PROGRAM or ERASE operation in other partition
BEFP: Program or Verify in progress
1 0 = No active PROGRAM or ERASE operation in any partition
BEFP: Operation complete
1 1 = Reserved
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Status Register
Clear Status Register

The status register has status bits and error bits. Status bits are set and cleared by the
device; error bits are only set by the device. Error bits are cleared using the CLEAR STA-
TUS REGISTER command or by resetting the device.
Note: Care should be taken to avoid status register ambiguity. If a command sequence
error occurs while in erase suspend, SR[5:4] will be set, indicating a command sequence
error. When the ERASE operation is resumed (and finishes), any errors that may have
occurred during the ERASE operation will be masked by the command sequence error.
To avoid this situation, clear the status register prior to resuming any suspended ERASE
operation.
The CLEAR STATUS REGISTER command functions independent of the voltage level on
VPP. Issuing the CLEAR STATUS REGISTER command places the addressed partition in
read status register mode. Other partitions are not affected.
Table 8: CLEAR STATUS REGISTER Command Bus Cycles
Setup WRITE Cycle Setup WRITE Cycle Confirm WRITE Cycle Confirm WRITE Cycle
Command Address Bus Data Bus Address Bus Data Bus
CLEAR STATUS Device address 0050h – –
REGISTER
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Read Configuration Register

The read configuration register is a volatile, 16-bit read/write register used to select bus
read modes and to configure synchronous burst read behavior of the device.
The read configuration register is programmed using the PROGRAM READ CONFIGU-
RATION REGISTER command. To read the read configuration register, issue the READ
ID command and then read from offset 0005h.
Upon power-up or exit from reset, the read configuration register defaults to asynchro-
nous mode (RCR15 = 1; all other bits are ignored).
Table 9: Read Configuration Register Bit Definitions (Default Value = BFCFh)

15 Read mode 0 = Synchronous burst mode
1 = Asynchronous mode (default)
14:11 Latency count 0 0 1 1 = Code 3
0 1 0 0 = Code 4
0 1 0 1 = Code 5
0 1 1 0 = Code 6
0 1 1 1 = Code 7 (default)
1 0 0 0 = Code 8
1 0 0 1 = Code 9
1 0 1 0 = Code 10
1 0 1 1 = Code 11
1 1 0 0 = Code 12
1 1 0 1 = Code 13
Other bit settings are reserved; see the table below for supported
clock frequencies
10 WAIT polarity 0 = WAIT signal is LOW-true (default)
1 = WAIT signal is HIGH-true
9 Reserved Write 0 to reserved bits
8 WAIT delay 0 = WAIT de-asserted with valid data
1 = WAIT de-asserted one clock cycle before valid data (default)
7:3 Reserved Write 0 to reserved bits
2:0 Burst length 0 1 0 = 8-word burst, wrap only
0 1 1 = 16-word burst, wrap only
1 1 1 = Continuous-burst: linear, no-wrap only (default)
Other bit settings are reserved
Table 10: Supported Clock Frequencies
Clock Frequency
Latency Count Code VCCQ = 1.7V to 2.0V
3 ≤32.6 MHz
4 ≤43.5 MHz
5 ≤54.3 MHz
6 ≤65.2 MHz
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Table 10: Supported Clock Frequencies (Continued)
Clock Frequency
Latency Count Code VCCQ = 1.7V to 2.0V
7 ≤76.1 MHz
8 ≤87.0 MHz
9 ≤97.8 MHz
10 ≤108.7 MHz
11 ≤119.6 MHz
12 ≤130.4 MHz
13 ≤133.3 MHz
Programming the Read Configuration Register

The read configuration register is programmed by issuing the PROGRAM READ CON-
FIGURATION REGISTER command. The desired RCR[15:0] settings are placed on
A[15:0], while the PROGRAM READ CONFIGURATION REGISTER SETUP command is
placed on the data bus. Upon issuing the SETUP command, the read mode of the ad-
dressed partition is automatically changed to read status register mode.
Next, the CONFIRM command is placed on the data bus while the desired settings for
RCR[15:0] are again placed on A[16:1]. Upon issuing the CONFIRM command, the read
mode of the addressed partition is automatically switched to read array mode.
Because the desired read configuration register value is placed on the address bus, any
hardware-connection offsets between the host’s address outputs and the device’s ad-
dress inputs must be taken into account. For example, if the host’s address outputs are
aligned to the device’s address inputs such that host address bit A1 is connected to ad-
dress bit A0, the desired register value must be left-shifted by one (for example, 2532h
<< 4A64h) before programming the read configuration register
Synchronous read accesses cannot occur until both the device and the host are in syn-
chronous read mode. Therefore, the software instructions used to perform read config-
uration register programming and host chip select configuration must be guaranteed
not to fetch from the device (instructions must be in system RAM or locked in cache).
This also applies when switching back to asynchronous read mode from synchronous
read mode.
Table 11: PROGRAM READ CONFIGURATION REGISTER Bus Cycles
PROGRAM READ RCR settings 0060h RCR settings 0003h
CONFIGURATION
REGISTER
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Extended Configuration Register

The extended configuration register is a volatile 16-bit, read/write register used to select
deep-power down and output-driver strength of the device.
Upon power-up or exit from reset, the extended configuration register defaults to
0004h.
The extended configuration register is programmed using the PROGRAM EXTENDED
CONFIGURATION REGISTER command. To read the extended configuration register,
issue the READ ID command to a partition, and read from <partition base address> +
06h.
Table 12: Extended Configuration Register Bit Definitions (Default Value = 0004h)

15:3 Reserved Write 0 to reserved bits
2:0 Output driver control 0 0 1 = Code 1
0 1 0 = Code 2
0 1 1 = Code 3
1 0 0 = Code 4 (default)
1 0 1 = Code 5
1 1 0 = Code 6
Other bit settings are reserved
Output Driver Control

The output driver control bits of the extended configuration register enable adjustment
of the device’s output-driver strength for DQ[15:0] and WAIT. Upon power-up or reset,
ECR[2:0] defaults to 100b for to an output impedance setting of 30 Ohms. To change the
output-driver strength, program ECR[2:0] to the desired setting.
Table 13: Output Driver Control Characteristics
Driver Impedance
ECR[2:0] (at VCCQ/2) Driver Multiplier Load (Same Speed)
001 90 Ohms 1/3 10pF
010 60 Ohms 1/2 15pF
011 45 Ohms 2/3 20pF
100 30 Ohms 1 30pF
101 20 Ohms 1–1/2 35pF
110 15 Ohms 2 40pF
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Programming the Extended Configuration Register

The extended configuration register is programmed by issuing the PROGRAM EXTEN-
DED CONFIGURATION REGISTER command. The desired ECR[15:0] settings are
placed on A[15:0], while the PROGRAM EXTENDED CONFIGURATION REGISTER SET-
UP command is placed on the data bus. Upon issuing the SETUP command, the read
mode of the addressed partition is automatically changed to read status register mode.
Next, the CONFIRM command is placed on the data bus while the desired settings for
ECR[15:0] are again placed on A[15:0]. Upon issuing the CONFIRM command, the read
mode of the addressed partition is automatically switched to read array mode.
Because the desired ECR value is placed on the address bus, any hardware-connection
offsets between the host’s address outputs and the device’s address inputs must be tak-
en into account.
For example, if the host’s address outputs are aligned to the device’s address inputs
such that host address bit A1 is connected to address bit A0, the desired register value
must be left-shifted by one (for example, 2532h << 4A64h) before programming the
ECR.
Programming the ECR functions independently of the voltage on V PP.
Table 14: Program Extended Configuration Register Command Bus Cycles
PROGRAM EXTENDED Register Data 0060h Register Data 0004h
CONFIGURATION
REGISTER
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Read Operations
Read Operations
The following types of data can be read from the device: array data (read array), device
information (read ID), CFI data (read CFI), and device status (read status register).
Upon power-up or return from reset, the device defaults to read array mode. To change
the read mode, the appropriate command must be issued to the device.
The table below shows the command codes used to configure the device for the desired
read mode.
Table 15: READ MODE Command Bus Cycles
READ ARRAY Partition address 00FFh – –
READ STATUS REGIS- Partition address 0070h – –
TER
READ ID Partition address 0090h – –
READ CFI Partition address 0098h – –
Read Array
Upon power-up or exit from reset, the device defaults to read array mode. Issuing the
READ ARRAY command places the addressed partition in read array mode and can only
be issued to a partition that is not actively programming or erasing. Subsequent reads
output array data from that partition.
The addressed partition remains in read array mode until a different READ command is
issued, a PROGRAM or ERASE operation is performed, or a BLOCK LOCK SETUP com-
mand is issued in that partition, in which case the read mode automatically changes to
read status.
To change a partition that is actively programming or erasing to read array mode, first
issue the SUSPEND command. After the operation has been suspended, issue the READ
ARRAY command to the partition. When the PROGRAM or ERASE operation is subse-
quently resumed, the partition will automatically revert back to read status mode.
The READ ARRAY command functions independently of the voltage level on V PP.
Issuing the READ ARRAY command to a partition that is actively programming or eras-
ing causes subsequent reads from that partition to output invalid data. Valid array data
is output only after the PROGRAM or ERASE operation has completed.
Read ID
Issuing the READ ID command places the addressed partition in read ID mode. Subse-
quent reads output device information such as manufacturer code, device identifier
code, block lock status, OTP data, or read configuration register data.
The addressed partition remains in read ID mode until a different READ command is
issued, or a PROGRAM or ERASE operation is performed in that partition, in which case
the read mode automatically changes to read status.
The READ ID command functions independently of the voltage level on V PP.
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Read Operations
Issuing the READ ID command to a partition that is actively programming or erasing

changes that partition’s read mode to read ID mode. Subsequent reads from that parti-
tion will not output device information until the PROGRAM or ERASE operation has
completed.
Table 16: Device Information
Device Information Address Bus Data Bus

Device manufacturer code Partition base address + 00h 0089h
Device ID code Partition base address + 01h Device ID
Block lock status Block base address + 02h D0 = Lock status
D1 = Lock-down status
Read configuration register Partition base address + 05h Configuration register data
Extended configuration register Partition base address + 06h Extended configuration register data
OTP lock register 0 Partition base address + 80h Lock register 0 data
OTP block 0 – factory segment Partition base address + 81h to 84h Factory-programmed data
OTP block 1 – user-programmable Partition base address + 85h to 88h User data
segment
OTP lock register 1 Partition base address + 89h Lock register 1 data
OTP blocks 2–17 Partition base address + 8Ah to 109h User data
Read CFI
Issuing the READ CFI command places the addressed partition in read CFI mode. Sub-
sequent reads from that partition output CFI information.
The addressed partition remains in read CFI mode until a different READ command is
issued, or a PROGRAM or ERASE operation is performed, or a BLOCK LOCK SETUP
command is issued, which changes the read mode to read status register mode.
The READ CFI command functions independently of the voltage level on V PP.
Issuing the READ CFI command to a partition that is actively programming or erasing
changes that partition’s read mode to read CFI mode. Subsequent reads from that parti-
tion will return invalid data until the PROGRAM or ERASE operation has completed.
Read Status Register

Issuing the READ STATUS REGISTER command places the addressed partition in read
status register mode; other partitions are not affected. Subsequent reads from that par-
tition output status register information.
Note: Chip enable or output enable must be toggled to update the status register data.
The addressed partition remains in read status register mode until a different READ
MODE command is issued to that partition. Performing a PROGRAM, ERASE, or BLOCK
LOCK operation also changes the partition’s read mode to read status register mode.
The READ STATUS REGISTER command functions independently of the voltage level
on V PP.
Status register contents are valid only when SR[7]=1.
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Read Operations
WAIT Operation
WAIT indicates the validity of output data during synchronous READ operations. It is
asserted when output data is invalid and de-asserted when output data is valid. WAIT
changes state only on valid clock edges. Upon power-up or exit from reset, WAIT de-
faults to LOW true (RCR[10] = 0).
WAIT is de-asserted during asynchronous reads. During WRITE operations, WAIT is
High-Z on non-mux devices, and deasserted on AD-mux devices.
Table 17: WAIT Behavior Summary – Non-MUX
Device Operation CE# OE# WE# WAIT

Standby (Device not selected) HIGH X X High-Z
Output Disable LOW HIGH HIGH High-Z
Synchronous Read LOW LOW HIGH Active
WAIT asserted = invalid data
WAIT de-asserted = valid data
Asynchronous Read LOW LOW HIGH De-asserted
Write LOW HIGH LOW High-Z
Note: 1. This table does not apply to AADM devices. See AADM Mode for WAIT behavior in
AADM mode.
Table 18: WAIT Behavior Summary – AD MUX
Device Operation CE# OE# WE# WAIT

Standby (Device not selected) HIGH X X High-Z
Output Disable LOW HIGH HIGH De-asserted
Synchronous Read LOW LOW HIGH Active
WAIT asserted = invalid data
WAIT de-asserted = valid data
Asynchronous Read LOW LOW HIGH De-asserted
Write LOW HIGH LOW De-asserted
Note: 1. This table does not apply to AADM devices. See AADM Mode for WAIT behavior in
AADM mode.
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Programming Modes
Programming Modes
Each programming region in a block can be configured for either control mode or ob-
ject mode.
The programming mode is automatically set based on the data pattern when a region is
first programmed. Selecting either control mode or object mode is done according to
the specific needs of the system. In control mode, code or data is frequently changed
(such as the flash file system or header information). In object mode, large code or data
(such as objects or payloads) is infrequently changed. By implementing the appropriate
programming mode, software can efficiently organize how information is stored in the
memory array.
Control mode programming regions and object mode programming regions can be in-
termingled within the same erase block. However, the programming mode of any region
within a block can be changed only after erasing the entire block.
Control Mode
Control mode programming is invoked when only the A-half (A3 = 0) of the program-
ming region is programmed to 0s. The B-half (A3 = 1) remains erased. Control mode al-
lows up to 512 bytes of data to be programmed in the region. The information can be
programmed in bits, bytes, or words.
Control mode supports the following programming methods:
• Single-word programming (0041h)
• Buffered programming (00E9h/00D0h)
• Buffered enhanced factory programming (0080h/00D0h)
When buffered programming is used in control mode, all addresses must be in the A-
half of the buffer (A3 = 0). During buffer fill, the B-half (A3 = 1) addresses do not need to
be filled with 0xFFFF.
Control mode programming is useful for storing dynamic information, such as flash file
system headers, file Info, and so on. Typically, control mode programming does not re-
quire the entire 512 bytes of data to be programmed at once. It may also contain data
that is changed after initial programming using a technique known as “bit twiddling”.
Header information can be augmented later with additional new information within a
control-mode-programmed region. This allows implementation of legacy file systems,
as well as transaction-based power-loss recovery.
In a control mode region, PROGRAM operations can be performed multiple times.
However, care must be taken to avoid programming any zeros in the B-half (A3 = 1) of
the region. Violation of this usage will cause SR[4] and SR[9] to be set, and the PRO-
GRAM operation will be aborted.
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Programming Modes
Figure 10: Configurable Programming Regions: Control Mode and Object Mode
Main Array 256Kb Block

256KB
256KB
.
.
256KB 1KB Programming region in object mode.
256KB Address Bit A3 = 0: Allows up to 1KB

. of data to be programmed.
256 programming regions of 1Kb in each 256Kb block

.
256KB
512 Bytes
512 Bytes
. A half Programming region in control mode
. B half
. (control mode)
(erased)
Address Bit A3 = 1: Allows up to
512 bytes of data to be programmed
to the A half by bit, byte, or word.
.
.
.
.
.
.
.
.
.
.
. 1KB Programming region in object mode
.
.
.
.
256KB 1KB Programming region in object mode

256KB
.
.
256KB
Object Mode
Object mode programming is invoked when one or more bits are programmed to zero
in the B-half of the programming region (A3 = 1).
Object mode allows up to 1KB to be stored in a programming region. Multiple regions
are used to store more than 1KB of information. If the object is less than 1KB, the un-
used content will remain as 0xFFFF (erased).
Object mode supports the following programming methods:
• Buffered programming (00E9h/00D0h)
• Buffered enhanced factory programming (0080h/00D0h)
Single-word programming (0041h) is not supported in object mode. To perform multi-
ple PROGRAM operations within a programming region, control mode must be used.
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Programming Modes
(Object mode is useful for storing static information, such as objects or payloads, that
rarely change.)
Once the programming region is configured in object mode, it cannot be augmented or
overwritten without first erasing the entire block containing the region. Subsequent
PROGRAM operations to a programming region configured in object mode will cause
SR[4] and SR[8] to be set and the PROGRAM operation to be aborted.
Issuing the 41h command to the B-half of an erased region will set error bits SR[8] and
SR[9], and the PROGRAM operation will not proceed.
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Programming Modes
Figure 11: Configurable Programming Regions: Control Mode and Object Mode Segments
Segments 32 Bytes
31 Object
30 Object Object Object
.
.
...
3 Object Object
2 Object Object
1 Object
0 Object
Programming region in
Program up to object mode
1KB of data
1KB
.
.
.
256Kb Block
1KB
512 Bytes 512 Bytes
A half B half
(control mode) (erased)
Program up to Programming
512 Bytes of data region in
control mode
Segments
31 Sequence Table Entry Header F F F F F F F F
30 Header Header F F F F F F F F
.
...
.
3 Header Directory Information F F F F F F F F
2 File Information Header F F F F F F F F
1 Header Sequence Table Entry F F F F F F F F
0 Header F F F F F F F F
16 Bytes 16 Bytes
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Programming Modes
Table 19: Programming Region Next State
Current State of Programming Region

Command Issued Erased Control Mode Object Mode
0041h to B-half (A3 = 1) Program fail; Illegal com- Program fail; Illegal com- Program fail; Illegal com-
mand mand mand
SR[4,8,9] = 1 SR[4,8,9] = 1 SR[4,8,9] = 1
0041h to A-half (A3 = 0) Program successful Program successful Program fail; Rewrite to
SR[4,8,9] = 0 SR[4,8,9] = 0 object mode region
Region configured to control SR[4,8] = 1
mode SR[9] = 0
00E9h to B-half (A3 = 1) Program successful Program fail; Object data Program fail; Rewrite to
SR[4,8,9] = 0 to control mode region object mode region
Region configured to object SR[4,9] = 1 SR[4,8] = 1
mode SR[8] = 0 SR[9] = 0
00E9h to A-half (A3 = 0) Program successful Program successful Program fail; Rewrite to
SR[4,8,9] = 0 SR[4,8,9] = 0 object mode region
Region configured to control SR[4,8] = 1
mode SR[9] = 0
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Program Operations
Program Operations
Programming the array changes 1s to 0s. To change 0s to 1s, an ERASE operation must
be performed. Only one PROGRAM operation can occur at a time. Programming is per-
mitted during erase suspend.
Information is programmed into the array by issuing the appropriate command.
All PROGRAM operations require the addressed block to be unlocked and a valid V PP
voltage applied throughout the PROGRAM operation. Otherwise, the PROGRAM opera-
tion will abort, setting the appropriate status register error bit(s).
If the device is deselected during a PROGRAM or ERASE operation, the device continues
to consume active power until the PROGRAM or ERASE operation has completed.
Table 20: PROGRAM Command Bus Cycles
SINGLE-WORD Device address 0041h Device address Array data
PROGRAM
BUFFERED PROGRAM Device address 00E9h Device address 00D0h
BUFFERED ENHANCED Device address 0080h Device address 00D0h
FACTORY PROGRAM
Single-Word Programming
Single-word programming is performed by issuing the SINGLE-WORD PROGRAM com-
mand. This is followed by writing the desired data at the desired address. The read
mode of the addressed partition is automatically changed to read status register mode,
which remains in effect until another READ MODE command is issued.
Issuing the READ STATUS REGISTER command to another partition switches that par-
tition’s read mode to read status register mode, thereby allowing programming progress
to be monitored from that partition’s address.
Single-Word Programming is supported in control mode only. The array address speci-
fied must be in the A-half of the programming region.
During programming, the status register indicates a busy status (SR[7] = 0). Upon com-
pletion, the status register indicates a ready status (SR[7] = 1). The status register should
be checked for any errors, then cleared.
The only valid commands during programming are READ ARRAY, READ ID, READ CFI,
and PROGRAM SUSPEND. After programming completes, any valid command can be
issued.
Issuing the READ ARRAY, READ ID, or READ CFI command to a partition that is actively
programming causes subsequent reads from that partition to output invalid data. Valid
data is output only after the PROGRAM operation is complete.
Standby power levels are not realized until the PROGRAM operation has completed. As-
serting RST# immediately aborts the PROGRAM operation, and array contents at the
addressed location are indeterminate. The addressed block should be erased and the
data reprogrammed.
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Program Operations
Buffered Programming
Buffered programming programs multiple words simultaneously into the memory ar-
ray. Data is first written to a programming buffer and then programmed into the array
in buffer-sized increments, significantly reducing the effective word programming time.
Optimal performance and power consumption is realized only by aligning the starting
address to buffer-sized boundaries within the array. Crossing a buffer-sized boundary
can cause the buffered programming time to double.
The BUFFERED PROGRAM operation consists of the following fixed, predefined se-
quence of bus WRITE cycles: 1) Issue the SETUP command; 2) Issue a word count; 3)
Fill the buffer with user data; and 4) Issue the CONFIRM command. Once the SETUP
command has been issued to an address, subsequent bus WRITE cycles must use ad-
dresses within the same block throughout the operation; otherwise, the operation will
abort. Bus READ cycles are allowed at any time and at any address.
Note: VPP must be at V PPL or V PPH throughout the BUFFERED PROGRAM operation.
Upon programming completion, the status register indicates ready (SR7 = 1), and any
valid command may be issued. A full status register check should be performed to
check for any programming errors. If any error bits are set, the status register should be
cleared using the CLEAR STATUS REGISTER command.
A subsequent BUFFERED PROGRAM operation can be initiated by issuing another SET-
UP command and repeating the buffered programming sequence. Any errors in the sta-
tus register caused by a previous operation should first be cleared to prevent masking of
errors that may occur during a subsequent BUFFERED PROGRAM operation.
Valid commands issued to the busy partition during array programming are READ AR-
RAY, READ ID, READ CFI, READ STATUS, and PROGRAM SUSPEND.
Issuing the READ ARRAY, READ ID, or READ CFI command to a partition that is actively
programming causes subsequent reads from that partition to output invalid data. Valid
data is output only after the PROGRAM operation has completed.
Buffered Enhanced Factory Programming

Buffered enhanced factory programming (BEFP) improves programming performance
through the use of the write buffer, elevated programming voltage (VPPH), and en-
hanced programming algorithm. User data is written into the write buffer, and then the
buffer contents are automatically written into the array in buffer-sized increments.
Internal verification during programming (inherent to MLC technology) and status reg-
ister error checking are used to determine proper completion of the PROGRAM opera-
tion. This eliminates delays incurred when switching between SINGLE-WORD PRO-
GRAM and VERIFY operations.
BEFP consists of the following three distinct phases:
1. Setup phase: V PPH and block lock checks
2. Program/verify phase: buffered programming and verification
3. Exit phase: block error check
BEFP is supported in both control mode and object mode. The programming mode se-
lection for the entire array block is driven by the specific type of information, such as
header or object data. Header/object data is aligned on a 1KB programming region
boundary in the main array block.
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Program Operations
Table 21: BEFP Requirements and Considerations
BEFP Requirements Temperature (TCASE) must be 25 °C, ± 5 °C

Voltage on VCC must be within the allowable operating range
Voltage on VPP must be within the allowable operating range
Block being programmed must be erased and unlocked
BEFP Considerations Block cycling below 100 erase cycles
Reading from another partition during EFP (RWW) is not allowed
BEFP programs within one block at a time
BEFP cannot be suspended
BEFP Setup Phase

Issuing the BEFP SETUP and CONFIRM command sequence starts the BEFP algorithm.
The read mode of the addressed partition is automatically changed to read status regis-
ter mode.
The address used when issuing the SETUP and CONFIRM commands must be buffer-
size aligned within the block being programmed; buffer contents cannot cross block
boundaries.
Note: The READ STATUS REGISTER command must not be issued; it will be interpreted
as data to be written to the write buffer.
A setup delay (tBEFP/setup) occurs while the internal algorithm checks V PP and block
lock status. If errors are detected, the appropriate status register error bits are set and
the operation aborts.
The status register should be polled for successful BEFP setup, indicated by SR[7:0] = 0
(device busy, buffer ready for data).
BEFP Program/Verify Phase
Data is first written into the write buffer, then programmed into the array. During the
buffer fill sequence, the address used must be buffer-size aligned. Use of any other ad-
dress will cause the operation to abort with a program fail error, and any data previously
loaded in the buffer will not be programmed into the array.
The buffer fill data is stored in sequential buffer locations starting at address 00h. A
word count equal to the maximum buffer size is used; therefore, the buffer must be
completely filled. If the amount of data is less than the maximum buffer size, the re-
maining buffer locations must be padded with FFFFh to completely fill the buffer.
Array programming starts as soon as the write buffer is full. Data words from the write
buffer are programmed into sequential array locations. SR0 = 1 indicates the write buf-
fer is not available while the BEFP algorithm programs the array.
The status register should be polled for SR0 = 0 (buffer ready for data) to determine
when the array programming has completed and the write buffer is again available for
loading. The internal address is automatically incremented to enable subsequent array
programming to continue from where the previous buffer-fill/array program sequence
ended within the block. This cycle can be repeated to program the entire block.
BEFP Exit Phase
To exit the program/verify phase, write FFFFh to an address outside of the block.
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Program Operations
The status register should be polled for SR7 = 1 (device ready), indicating the BEFP algo-
rithm has finished running and the device has returned to normal operation.
A full status register error check should be performed to ensure the block was program-
med successfully.
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Erase Operations
Erase Operations
BLOCK ERASE
Erasing a block changes 0s to 1s. To change 1s to 0s, a PROGRAM operation must be
performed. Erasing is performed on a block basis; an entire block is erased each time an
erase command sequence is issued. Once a block is fully erased, all addressable loca-
tions within that block read as logical 1s (FFFFh).
Only one BLOCK ERASE operation can occur at a time. A BLOCK ERASE operation is
not permitted during program suspend. All BLOCK ERASE operations require the ad-
dressed block to be unlocked, and V PP must be at V PPL or V PPH throughout the BLOCK
ERASE operation. Otherwise, the operation aborts, setting the appropriate status regis-
ter error bit(s).
To perform a BLOCK ERASE operation, issue the BLOCK ERASE SETUP command at the
desired block address. The read mode of the addressed partition automatically changes
to read status register mode and remains in effect until another READ MODE command
is issued.
The ERASE CONFIRM command latches the address of the block to be erased. The ad-
dressed block is preconditioned (programmed to all 0s), erased, and then verified.
Issuing the READ STATUS REGISTER command to another partition switches that par-
tition’s read mode to the read status register, thereby allowing block erase progress to be
monitored from that partition’s address. SR0 indicates whether the addressed partition
or the other partition is erasing.
During a BLOCK ERASE operation, the status register indicates a busy status (SR[7] = 0).
Issuing the READ ARRAY command to a partition that is actively erasing a main block
causes subsequent reads from that partition to output invalid data. Valid array data is
output only after the BLOCK ERASE operation has finished.
Upon completion, the status register indicates a ready status (SR[7] = 1). The status reg-
ister should be checked for any errors, and then cleared.
If the device is deselected during an ERASE operation, the device continues to consume
active power until the ERASE operation is completed.
Asserting RST# immediately aborts the BLOCK ERASE operation, and array contents at
the addressed location are indeterminate. The addressed block should be erased again.
The only valid commands during a BLOCK ERASE operation are READ ARRAY, READ ID,
READ CFI, and ERASE SUSPEND. After the BLOCK ERASE operation has completed,
any valid command can be issued.
Table 22: ERASE Command Bus Cycle
BLOCK ERASE Device address 0020h Block address 00D0h
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SUSPEND and RESUME Operations

PROGRAM and ERASE operations of the main array can be suspended to perform other
device operations, and then subsequently resumed. OTP area programming operations
cannot be suspended. During erase suspend or program suspend, the addressed block
must remain unlocked, V PP must be at V PPL or V PPH, and WP# must remain unchanged.
Otherwise, the ERASE or PROGRAM operation will abort, setting the appropriate status
register error bit(s).
SUSPEND Operation
To suspend an ongoing ERASE or PROGRAM operation, issue the SUSPEND command
to any device address. Issuing the SUSPEND command does not change the read mode.
Upon issuing a SUSPEND command, the ongoing ERASE or PROGRAM operation sus-
pends after a delay of tSUSP. The operation is suspended only when SR[7:6] = 1 (erase
suspend) or SR[7:2] = 1 (program suspend).
While suspended, reading from a block that was being erased or programmed is not al-
lowed. Also, programming within an erase suspended block is not allowed, and if at-
tempted, will result in a programming error (SR[4] = 1). Erasing under program suspend
is not allowed. However, array programming under erase suspend is allowed, and can
also be suspended. This results in a simultaneous erase suspend and program suspend
condition, indicated by SR[7:6,2] = 1. Additional valid commands while suspended are
READ ARRAY, READ STATUS REGISTER, READ ID, READ CFI, CLEAR STATUS REGIS-
TER, and RESUME. No other commands are allowed.
During suspend, CE# may be de-asserted, placing the device in standby and reducing
active current to standby levels. V PP must remain at V PPL or V PPH, and WP# must remain
unchanged.
Asserting RST# aborts any suspended BLOCK ERASE and PROGRAM operations; array
contents at the addressed locations will be indeterminate.
During suspend, CE# may be de-asserted. The device is placed in standby, reducing ac-
tive current. V PP must remain at V PPL or V PPH, and WP# must remain unchanged.
Asserting RST# aborts suspended BLOCK ERASE and PROGRAM operations; array con-
tents at the addressed locations are indeterminate.
Table 23: Valid Commands During Suspend
Device Command Program Suspend Erase Suspend

Read Array Allowed Allowed
Read Status Register Allowed Allowed
Clear Status Register Allowed Allowed
Read Device Information Allowed Allowed
CFI Query Allowed Allowed
Word Program Not Allowed Allowed
Buffered Program Not Allowed Not Allowed
Buffered Enhanced Factory Program Not Allowed Not Allowed
Block Erase Not Allowed Not Allowed
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Table 23: Valid Commands During Suspend (Continued)
Device Command Program Suspend Erase Suspend

Program/Erase Suspend Not Allowed Not Allowed
Program/Erase Resume Allowed Allowed
RESUME Operation
To resume a suspended ERASE or PROGRAM operation, issue the RESUME command
to any device address. The ERASE or PROGRAM operation continues where it left off,
and the respective status register suspend bit is cleared. Issuing the RESUME command
does not change the read mode.
When the RESUME command is issued during a simultaneous erase suspend or pro-
gram suspend condition, the PROGRAM operation is resumed first. Upon completion of
the PROGRAM operation, the status register should be checked for any errors, and
cleared if needed. The RESUME command must be issued again to complete the ERASE
operation. Upon completion of the ERASE operation, the status register should be
checked for any errors, and cleared if needed.
Table 24: SUSPEND and RESUME Command Bus Cycles
SUSPEND Device address 00B0h – –
RESUME Device address 00D0h – –
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BLANK CHECK Operation
BLANK CHECK Operation

Blank check verifies whether a main-array block is completely erased. A BLANK CHECK
operation is performed one block at a time, and cannot be used during program sus-
pend or erase suspend.
To use blank check, first issue the BLANK CHECK SETUP command followed by the
CONFIRM command. The read mode of the addressed partition is automatically
changed to read status register mode, which remains in effect until another read mode
is issued.
During a BLANK CHECK operation, the status register indicates a busy status (SR[7] =
0). Upon completion, the status register indicates a ready status (SR[7] = 1). Issuing the
READ STATUS REGISTER command to another partition switches that partition’s read
mode to read status register mode, thereby allowing the BLANK CHECK operation to be
monitored from that partition’s address.
The status register should be checked for any errors, and then cleared. If theBLANK
CHECK operation fails (the block is not completely erased), then the status register will
indicate a blank check error (SR[7:5] = 1).
The only valid command during a BLANK CHECK operation is read status. Blank check
cannot be suspended. After the BLANK CHECK operation has completed, any valid
command can be issued.
Table 25: BLANK CHECK Command Bus Cycles
BLANK Block address 00BCh Block address 00D0h
CHECK
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Block Lock
Block Lock
Two methods of block lock control are available: software and hardware. Software con-
trol uses the BLOCK LOCK and BLOCK UNLOCK commands. Hardware control uses the
BLOCK LOCK-DOWN command along with asserting WP#.
Upon power-up or exit from reset, all main array blocks are locked, but not locked
down. Locked blocks cannot be erased or programmed. BLOCK LOCK and UNLOCK
operations are independent of the voltage level on V PP.
To lock, unlock, or lock-down a block, first issue the SETUP command to any address
within the desired block. The read mode of the addressed partition is automatically
changed to read status register mode. Next, issue the desired CONFIRM command to
the block’s address. Note that the CONFIRM command determines the operation per-
formed. The status register should be checked for any errors, and then cleared.
The lock status of a block can be determined by issuing the READ ID command, and
then reading from the block’s base address + 02h. See the table below table for the lock-
bit settings.
Blocks cannot be locked or unlocked while being actively programmed or erased.
Blocks can be locked or unlocked during erase suspend, but not during program sus-
pend. If a BLOCK ERASE operation is suspended, and then the block is locked or locked
down, the lock status of the block will be changed immediately. When resumed, the
ERASE operation will still complete.
Block lock-down protection is dependent on WP#. A locked-down block can only be un-
locked by issuing the BLOCK UNLOCK command with WP# de-asserted. To return an
unlocked block to the locked-down state, a BLOCK LOCK-DOWN command must be is-
sued prior to asserting WP#.
When WP# = V IL, blocks locked down are locked, and cannot be unlocked using the
BLOCK UNLOCK command.
When WP# = V IH, block lock-down protection is disabled; locked-down blocks can be
individually unlocked using the BLOCK UNLOCK command.
Subsequently, when WP# = V IL, previously locked-down blocks are once again locked
and locked-down, including locked-down blocks that may have been unlocked while
WP# was de-asserted.
Issuing the BLOCK LOCK-DOWN command to an unlocked block does not lock the
block. However, asserting WP# after issuing the BLOCK LOCK-DOWN command locks
(and locks down) the block. Lock-down for all blocks is only cleared upon power-up or
exit from reset.
Table 26: BLOCK LOCK Command Bus Cycles
BLOCK Block address 0060h Block address 0001h
LOCK
BLOCK UN- Block address 0060h Block address 00D0h
LOCK
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Block Lock
Table 26: BLOCK LOCK Command Bus Cycles (Continued)
BLOCK Block address 0060h Block address 002Fh
LOCK-
DOWN
Table 27: Block Lock Configuration
Block Lock Configu-

ration Block Base Address Bit
Block is unlocked Block base address = 0x02 DQ0 = 0b0
Block is locked Block base address = 0x02 DQ0 = 0b1
Block is not locked Block base address = 0x02 DQ1 = 0b0
down
Block is locked down Block base address = 0x02 DQ1 = 0b1
Figure 12: BLOCK LOCK Operations
Locked Hardware
Locked
down locked
[X, 0, 1]
[0, 1, 1] [0, 1, 1]
Power-Up
or
exit from reset
Software
Unlocked Unlocked
locked
[X, 0, 0] [1, 1, 0]
[1, 1, 1]
Software control (LOCK, UNLOCK, LOCK-DOWN command)

Hardware control (WP#)
Notes: 1. The [n,n,n] denotes logical state of WP#, DQ1,and DQ0, respectively; X = "Don’t Care."
2. The [0,1,1] states should be tracked by system software to differentiate between the
hardware-locked state and the lock-down state.
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One-Time Programmable Operations

The device contains sixteen 128-bit one-time programmable (OTP) blocks, two 64-bit
OTP blocks, and two 16-bit OTP lock registers. OTP lock register 0 is used for locking
OTP blocks 0 and 1 (two 64-bit blocks), and OTP lock register 1 is used for locking OTP
blocks 2 through 17 (sixteen 128-bit blocks).
Each block contains OTP bits that are factory set to 1 and can only be programmed from
1 to 0; OTP block bits cannot be erased from 0 back to 1. This feature makes the OTP
blocks particularly useful for implementing system-level security schemes, permanent-
ly storing data, or storing fixed system parameters.
OTP block 0 is pre-programmed with a unique 64-bit value and locked at the factory.
OTP block 1 contains all 1s and is user-programmable. OTP blocks 1 through 16 contain
all 1s and are user-programmable.
Each OTP block can be accessed multiple times to program individual bits, as long as
the block remains unlocked. When a lock register bit is programmed, the associated
OTP block can only be read—it can no longer be programmed.
OTP lock register bits lock out subsequent programming of the corresponding OTP
block. Each OTP block can be locked by programming its corresponding lock bit to 0. As
long as an OTP block remains unlocked (that is, its lock bit = 1), any of its remaining 1
bits can be programmed to 0.
Note: Once an OTP block is locked, it cannot be unlocked. Attempts to program a
locked OTP block will fail with error bits set. Additionally, because the lock register bits
themselves are OTP, when programmed, lock register bits cannot be erased. Therefore,
when an OTP block is locked, it cannot be unlocked.
Table 28: Program OTP Area Command Bus Cycles
PROGRAM OTP AREA Device address 00C0h OTP register address Register data
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Figure 13: OTP Area Map
0x109
128-bit OTP 17
(user-programmable)
0x102
0x91
128-bit OTP block 2

(user-programmable)
0x8A
OTP lock register 1
0x89 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
0x88
64-bit OTP block 1
(user-programmable)
0x85
0x84
64-bit OTP block 0
(factory-programmed)
0x81
OTP lock register 0
0x80 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
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Programming OTP Area

OTP area programming is performed 16 bits at a time; only zeros within the data word
affect any change to the OTP bits.
To program any OTP blocks or lock registers, first issue the PROGRAM OTP AREA SET-
UP command at any device address. The read state of that partition changes to read sta-
tus. Next, write the desired OTP data at the desired OTP address.
Attempting to program outside of the OTP area causes a program error (SR[4] = 1).
Attempting to program a locked OTP block causes a program error and a lock error
(SR[4] = 1, SR[1] = 1).
OTP area programming cannot be suspended. Dual operations between the parameter
partition and the OTP area are not allowed.
Reading OTP Area

The OTP area is read from within the address space of any partition. To read from the
OTP area. the following must be done:
1. Issue the READ ID command at the address of any partition to place that partition
in the read ID state.
2. Perform a READ operation at the base address of that partition, plus the address
offset corresponding to the OTP word to be read. Data is read 16 bits at a time.
If a PROGRAM or ERASE operation occurs within the device while it is reading from the
OTP area, certain restrictions may apply.
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Global Main-Array Protection
Global Main-Array Protection

Global main-array protection can be implemented by controlling V PP. When program-
ming or erasing main-array blocks, V PP must be equal to or greater than V PPL, min . When
VPP is below V PPLK, PROGRAM or ERASE operations are inhibited, thus providing abso-
lute protection of the main array.
Various methods exist for controlling V PP, ranging from simple logic control to off-board
voltage control. The following figure shows example V PP supply connections that can be
used to support PROGRAM or ERASE operations and main-array protection.
Figure 14: VPP Supply Connection Example
VCC VCC VCC VCC

VPPH VPPL
VPP PROT# VPP
≤10kΩ
• Factory programming: VPP = VPPH • Program/Erase enable: PROT# = VIH

• Program/erase protection: VPP ≤ VPPLK • Program/Erase protection: PROT# = VIL
VCC VCC VCC VCC

VPPL VPPL
VPP VPP
VPPH
• Low-voltage programming • Low-Voltage programming: V PP = VCC

or • Program/Erase protection: None
• Factory programming
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Dual Operation
Dual Operation
Multipartition architecture of the device enables reading from one partition while a
PROGRAM or ERASE operation is occurring in another partition. This is called read-
while-program and read-while-erase, respectively.
Only status reads are allowed from a partition that is busy programming or erasing. If
non-status reads are required from a partition that is busy programming or erasing, the
PROGRAM or ERASE operation must be suspended first.
Table 29: Dual Operation Restrictions

The following table shows the allowed dual operations between array operations and non-array operations
Program or Erase
Read Program OTP Area
Main Partition
Main Partition Yes (except busy partition) Yes (except busy partition)
Status Yes Yes
ID, OTP, or CFI Yes (except busy partition) No
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Power and Reset Specifications

Initialization
Proper device initialization and operation is dependent on the power-up/down se-
quence, reset procedure, and adequate power-supply decoupling.
Power-Up and Down

To avoid conditions that may result in spurious PROGRAM or ERASE operations, the
power sequences shown below are recommended. Note that each power supply must
be at its minimum voltage range before applying or removing the next supply voltage in
the sequence. Also, device inputs must not be driven until all supply voltages have at-
tained their minimum range, and RST# should be LOW during all power transitions.
When powering down the device, voltages should reach 0V before power is reapplied to
ensure proper device initialization. Otherwise, indeterminate operation could result.
When V CCQ goes below V LKOQ, the device is reset.
Table 30: Power Sequencing
Power Supply Power-Up Sequence Power-Down Sequence

VCC,min First First First1 First1 Third Second Second1 Second1
VCCQ,min Second Second1 First1 Second Second First1 Second1 First
VPP,min Third Second1 Second First1 First First1 First Second1
Note: 1. Connected/sequenced together.
Reset
During power-up and power-down, RST# should be asserted to prevent spurious PRO-
GRAM or ERASE operations. While RST# is LOW, device operations are disabled, all in-
puts such as address and control are ignored, and all outputs such as data and WAIT are
placed in High-Z. Invalid bus conditions are effectively masked out.
Upon power-up, RST# can be de-asserted after tVCCPH, allowing the device to exit from
reset. Upon exiting from reset, the device defaults to asynchronous read array mode,
and the status register defaults to 0080h. Array data is available after tPHQV, or a bus
WRITE cycle can begin after tPHWL. If RST# is asserted during a PROGRAM or ERASE
operation, the operation will abort and array contents at that location will be invalid.
For proper system initialization, connect RST# to the LOW true reset signal that asserts
whenever the processor is reset. This will ensure the device is in the expected read
mode (read array) upon startup.
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Figure 15: RESET Operation Waveforms
tPLPH tPHQV
(A) Reset during VIH

RST#
read mode VIL
tPLRH Abort tPHQV
complete
(B) Reset during VIH
RST#
program or block erase VIL
P1 £ P2
tPLRH Abort tPHQV
complete
(C) Reset during VIH
RST#
program or block erase VIL
P1 ³ P2
tVCCPH
(D) VCC power-up to VCC

VCC
RST# HIGH 0V
Table 31: Reset Specifications

Note 1 applies to all
Parameter Symbol Min Max Unit Notes
RST# pulse width LOW tPLPH 100 – ns 2, 3, 6
RST# LOW to device tPLRH – 25 µs 3, 6
reset during erase
RST# LOW to device – 25 3, 6
reset during program
VCC power valid to RST# de-asser- tVCCPH 300 – 4, 5
tion (HIGH)
Notes: 1. These specifications are valid for all packages and speeds, and are sampled, not 100%
tested.
2. The device might reset if tPLPH is < tPLPH MIN, but this is not guaranteed.
3. Not applicable if RST# is tied to VCCQ.
4. If RST# is tied to the VCC supply, the device is not ready until tVCCPH after VCC ≥ VCC,min.
5. If RST# is tied to any supply/signal with VCCQ voltage levels, the RST# input voltage must
not exceed VCC until VCC ≥ VCC,min.
6. Reset completes within tPLPH if RST# is asserted while no ERASE or PROGRAM operation
is executing.
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Automatic Power Saving

Automatic power saving provides low-power operation following reads during active
mode. After data is read from the memory array and the address lines are quiescent, au-
tomatic power savings automatically places the device into standby. In automatic power
savings, device current is reduced to ICCAPS.
Power Supply Decoupling

Flash memory devices require careful power supply decoupling to prevent external
transient noise from affecting device operations, and to prevent internallygenerated
transient noise from affecting other devices in the system.
Ceramic chip capacitors of 0.01µF to 0.1µF should be used between all V CC, V CCQ, and
VPP supply connections and system ground. These high-frequency, inherently low-in-
ductance capacitors should be placed as close as possible to the device package, or on
the opposite side of the printed circuit board close to the center of the device package
footprint.
Larger (4.7µF to 33.0µF) electrolytic or tantulum bulk capacitors should also be distrib-
uted as needed throughout the system to compensate for voltage sags and surges
caused by circuit trace inductance.
Transient current magnitudes depend on the capacitive and inductive loading on the
device’s outputs. For best signal integrity and device performance, high-speed design
rules should be used when designing the printed-circuit board. Circuit-trace impedan-
ces should match output-driver impedance with adequate ground-return paths. This
will help minimize signal reflections (overshoot/undershoot) and noise caused by high-
speed signal edge rates.
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Electrical Specifications
Electrical Specifications
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only. Exposure to absolute maximum rating and operating conditions for
extended periods may adversely affect reliability. Stressing the device beyond the abso-
lute maximum ratings may cause permanent damage. These are stress ratings only.
Table 32: Absolute Maximum Ratings
Parameter Min Max Units Notes

Temperature under bias (TA) –30 85 °C 5
Storage temperature (TA) –65 125 °C 5
VPP voltage –2.0 11.5 V 1, 2, 3
VCC voltage –2.0 VCCQ + 2.0 V 1
Voltage on any input/output signal (except VCC, VCCQ, and VPP) –2.0 VCCQ + 2.0 V 2
VCCQ voltage –0.2 VCCQ + 2.0 V 1
VPPH time – 80 hours 3
Output short circuit current – 100 mA 4
Block Program/Erase Cycles: Main Blocks 100,000 – Cycles 3
Notes: 1. Voltages shown are specified with respect to VSS. During transitions, the voltage poten-
tial between VSS and input/output and supply pins may undershoot to –1.0V for periods
less than 20ns and may overshoot to VCC Q(max) + 1.0V for periods less than 20ns.
2. Voltages shown are specified with respect to VSS. During transitions, the voltage poten-
tial between VSS and supply pins may undershoot to –2.0V for periods less than 20ns and
may overshoot to VCC (max) + 2.0V for periods less than 20ns.
3. Operation beyond this limit may degrade performance.
4. Output shorted for no more than one second; no more than one output shorted at a
time.
5. Temperature specified is ambient (TA), not case (TC).
Table 33: Operating Conditions
Symbol Parameter Min Max Units Notes

TC Operating temperature –30 85 °C 1
VCC VCC supply voltage 1.7 2.0 V
VCCQ I/O supply voltage 1.7 2.0 V
VPPL VPP voltage supply (logic level) 0.9 2.0 V
VPPH Factory programming VPP 8.5 9.5 V
Note: 1. TC = Case temperature, not ambient.
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Electrical Specifications – DC Current and Voltage Characteris-
tics and Operating Conditions
Electrical Specifications – DC Current and Voltage Characteristics and

Operating Conditions
Table 34: DC Current Characteristics and Operating Conditions
Litho Density 1.7 V - 2.0 V

Parameter Symbol Conditions (nm) (Mbit) Typ Max Unit Notes
Input Load, Output Leakage, Standby
Input load ILI VCC = VCC,max; VCCQ = – – – ±1 µA 1
current VCCQ,max; VIN = VCCQ or
VSS
Output leakage ILO VCC = VCC,max; VCCQ = – – – ±1 µA 1
current VCCQ,max; VIN = VCCQ or
VSS
VCC standby ICCS, VCC = VCC,max; VCCQ = 90 256 35 95 µA 1, 2
ICCD VCCQ,max; CE# = VCCQ; 512 50 120
RST# = VCCQ or GND 65 128 45 115
(for ICCS); WP# = VIH 256 50 130
512 60 160
1024 70 185
45 128 18 100
256 18 100
512 18 100
1024 20 140
Average VCC Read
Average VCC ICCR VCC = VCC,max; CE# = VIL; – – 25 30 mA 1, 3, 4
read current; OE# = VIH; Inputs: VIL
Asychronous sin- or VIH
gle-word read; f
= 5 MHz; 1 CLK
read current; OE# = VIH; Inputs: VIL
Page mode read; or VIH
f = 13 MHz; 17
CLK; Burst = 16-
word
read current; OE# = VIH; Inputs: VIL 19 26
Sychronous burst or VIH 25 34
read; f = 66 MHz;
LC = 7;
Burst = 8-word
Burst = 16-word;
Burst = Continu-
ous
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Table 34: DC Current Characteristics and Operating Conditions (Continued)

read; f = 108
MHz; LC = 10;
Burst = 8-word
Burst = 16-word;
Burst = Continu-
ous
read; f = 133
MHz; LC = 13;
Burst = 8-word
Burst = 16-word;
Burst = Continu-
ous
VCC Program, Erase, Blank Check
VCC Program ICCW, VPP = VPPL or VPP = – – 35 50 mA 1, 3, 4,
VCC Erase ICCE, VPPH; Program/erase in 5
VCC Blank Check ICCBC progress
VCC Program sus- ICCWS, CE# = VCCQ; Suspend in 90 256 35 95 µA 1, 3, 6
pend ICCES progress 512 50 120
VCC Erase sus- 65 128 45 115
pend 256 50 130
512 60 160
1024 70 185
45 128 18 100
256 18 100
512 18 100
1024 20 140
VPP Program, Read, Erase, Blank Check, Standby
VPP standby cur- IPPS, VPP = VPPL; Suspend in – – 0.2 5 µA 3
rent; VPP pro- IPPWS, progress
gram suspend IPPES
current; VPP
erase suspend
current
VPP read IPPR VPP ≤ VCC – – 2 15 µA 3
VPP program cur- IPPW VPP = VPPL = VPPH; Pro- – – 0.05 0.10 mA 3
rent gram in progress
VPP erase current IPPE VPP = VPPL = VPPH; Erase – – 0.05 0.10 mA 3
in progress
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Table 34: DC Current Characteristics and Operating Conditions (Continued)

VPP blank check IPPBC VPP = VPPL = VPPH; Blank – – 0.05 0.10 mA 3
current check in progress
Automatic Power Savings
Automatic pow- ICCAPS VCC = VCC,max; VCCQ = 90 256 35 95 µA –
er VCCQ,max; CE# = VSSQ; 512 50 120
savings RST# = VCCQ; All inputs 65 128 45 115
are at rail-to-rail (VCCQ 256 50 130
or VSSQ) 512 60 160
1024 70 185
45 128 18 100
256 18 100
512 18 100
1024 20 140
Notes: 1. All currents are RMS unless noted. Typical values at typical VCCQ, TC = +25°C.
2. ICCS is the average current measured over any 5ms time interval 5µs after CE# is de-asser-
ted.
3. Sampled, not 100% tested.
4. VCC read + program current is the sum of VCC read and VCC program currents. VCC read +
erase current is the sum of VCC read and VCC erase currents.
5. ICCW, ICCE is measured over typical or max times specified in Program and Erase Charac-
teristics.
6. ICCES is specified with the device deselected. If the device is read while in erase suspend,
current is ICCES + ICCR.
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Table 35: DC Voltage Characteristics and Operating Conditions
VCCQ=
1.7V - 2.0V
Parameter Symbol Conditions Min Max Unit Notes
Input low voltage VIL – 0 0.45 V 1
Input high voltage VIH – VCCQ - VCCQ V 1
0.45
Output low voltage VOL VCC = VCC,min; VCCQ = – 0.1 V
VCCQ,min; IOL = 100µA
Output high voltage VOH VCC = VCC,min; VCCQ = VCCQ - 0.1 – V
VCCQ,min; IOL = 100µA
VPP lockout voltage VPPLK – – 0.4 V 2
VCC lock voltage VLKO – 1.0 – V
VCCQ lock voltage VLKOQ – 0.9 – V
Notes: 1. Input voltages can undershoot to –1.0V and overshoot to VCCQ + 1V for durations of 2ns
or less.
2. VPP < VPPLK inhibits ERASE and PROGRAM operations. Do not use VPPL and VPPH outside
of their valid ranges.
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Electrical Specifications – AC Characteristics and Operating
Conditions
Electrical Specifications – AC Characteristics and Operating Conditions

AC Test Conditions
Figure 16: AC Input/Output Reference Waveform
VCCQ
Input VCCQ/2 Test points VCCQ/2 Output
0V
tRISE/FALL
Note: 1. AC test inputs are driven at VCCQ for Logic 1, and 0.0V for Logic 0. Input/output timing
begins/ends at VCCQ/2. Input rise and fall times (10% to 90%) <5ns. Worst-case speed oc-
curs at VCC = VCC,min.
Table 36: AC Input Requirements
Parameter Symbol Frequency Min Max Unit Condition

Inputs rise/fall time (Address, tRISE/FALL @133 MHz, 0.3 1.2 ns VIL to VIH or
CLK, CE#, OE#, ADV#, WE#, WP#) 108 MHz VIH to VIL
@66 MHz 0 3
Address-address skew1 tASKW 0 3 ns @VCCQ/2
Note: 1. For an address to be latched the skew is defined as the time when the first address bit is
valid to the last address bit going valid.
Figure 17: Transient Equivalent Testing Load Circuit
Device under
Out
test
CL
Notes: 1. See Test Configuration Load Capacitor Values for Worst Case Speed Conditions table for
component values for the test configurations.
2. CL includes jig capacitance.
Table 37: Test Configuration Load Capacitor Values for Worst Case Speed
Conditions
Test Configuration CL (pF)

1.7V Standard test 30
2.0V Standard test 30
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Electrical Specifications – AC Characteristics and Operating
Conditions
Figure 18: Clock Input AC Waveform

tCLK
VIH
CLK
VIL
tCH/CL tFCLK/RCLK
Table 38: Capacitance

Notes 1, 2, and 3 apply to all parameters
Parameter Symbol Signals Min Typ Max Unit Test Condition
Input capacitance CIN Address, CLK, CE#, OE#, 2 4 6 pF VIN = 0–2.0V
ADV#, WE#, WP#, DPD,
and RST#
Output capaci- COUT Data, WAIT 2 5 6 pF VOUT = 0–2.0V
tance
Notes: 1. TC = +25°C, f = 1 MHz.

3. Silicon die capacitance only. For discrete packages, add 1pF. For stacked packages, total
capacitance = 2pF + sum of silicon die capacitances.
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AC Read Specifications
AC Read Specifications (CLK-Latching, 133 MHz)
Table 39: AC Read Specifications (CLK-Latching, 133 MHz), VCCQ = 1.7V to 2.0V
Note 1 applies to all parameters
96ns
Asynchronous Specifications
READ cycle time tAVAV 96 – ns
Address to output valid tAVQV – 96 ns
CE# LOW to output valid tELQV – 96 ns
OE# LOW to output valid tGLQV – 7 ns 2
RST# HIGH to output valid tPHQV – 150 ns
CE# LOW to output in Low-Z tELQX 0 – ns 3
OE# LOW to output in Low-Z tGLQX 0 – ns 2, 3
CE# HIGH to output in High-Z tEHQZ – 7 ns 3
OE# HIGH to output in High-Z tGHQZ – 7 ns 3
Output hold from first occurring address, CE#, tOH 0 – ns 3
or OE# change
CE# pulse width HIGH tEHEL 7 – ns
CE# LOW to WAIT valid tELTV – 8 ns
CE# HIGH to WAIT High-Z tEHTZ – 7 ns 3
OE# HIGH to WAIT valid (A/D MUX only) tGHTV – 5.5 ns
OE# LOW to WAIT valid tGLTV – 5.5 ns
OE# LOW to WAIT in Low-Z tGLTX 0 – ns 3
OE# HIGH to WAIT in High-Z (non-MUX only) tGHTZ 0 7 ns 3
Latching Specifications
Address setup to ADV# HIGH tAVVH 5 – ns
CE# LOW to ADV# HIGH tELVH 7 – ns
ADV# LOW to output valid tVLQV – 96 ns
ADV# pulse width LOW tVLVH 7 – ns
ADV# pulse width HIGH tVHVL 7 – ns
Address hold from ADV# HIGH tVHAX 5 – ns
ADV# HIGH to OE# LOW (A/D MUX only) tVHGL 2 – ns
Page address access (non-MUX only) tAPA – 15 ns
RST# HIGH to ADV# HIGH tPHVH 30 – ns
Clock Specifications
CLK frequency fCLK – 133 MHz
CLK period tCLK 7.5 – ns
CLK HIGH/LOW time tCH/CL 0.45 0.55 CLK
period
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Table 39: AC Read Specifications (CLK-Latching, 133 MHz), VCCQ = 1.7V to 2.0V (Continued)
Note 1 applies to all parameters
96ns
CLK fall/rise time tFCLK/RCLK 0.3 1.2 ns
Synchronous Specifications
Address setup to CLK HIGH tAVCH 2 – ns
ADV# LOW setup to CLK HIGH tVLCH 2 – ns
CE# LOW setup to CLK HIGH tELCH 2.5 – ns
CLK to output valid tCHQV – 5.5 ns
Output hold from CLK HIGH tCHQX 2 – ns
Address hold from CLK HIGH tCHAX 2 – ns
CLK HIGH to WAIT valid tCHTV – 5.5 ns
ADV# HIGH hold from CLK tCHVL 2 – ns
WAIT hold from CLK tCHTX 2 – ns
ADV# hold from CLK HIGH tCHVH 2 – ns 4
CLK to OE# LOW (A/D MUX only) tCHGL 2 – ns
Read access time from address latching clock tACC 96 – ns
ADV# pulse width LOW for sync reads tVLVH 1 2 clocks 4
ADV# HIGH to CLK HIGH tVHCH 2 – ns 4
Notes: 1. See Electrical Specifications – AC Characteristics and Operating Conditions for timing
measurements and MAX allowable input slew rate.
2. OE# can be delayed by up to tELQV - tGLQV after the CE# falling edge without impact to
tELQV.

4. For 45nm devices, these specifications are not required as a result of the enhanced CLK-
latching scheme. See the StrataFlash® Cellular Memory 65nm to 45nm M Family Migra-
tion Guide and the StrataFlash® Cellular Memory 65nm to 45nm M Family Latching
Scheme Migration Guide for more information.
AC Read Timing
The Synchronous read timing waveforms apply to both 108 and 133 MHz devices. How-
ever, devices that only support up to 108 MHz need not meet the following timing spec-
ifications.
• tCHVH
• tCHGL
• tACC
• tVLVH
• tVHCH
Note: The WAIT signal polarity in all the timing waveforms is low-true (RCR10 = 0).
WAIT is shown as de-asserted with valid data (RCR8 = 0). WAIT is de-asserted during
asynchronous reads.
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Figure 19: Asynchronous Page-Mode Read (Non-MUX)
tAVAV
tAVQV
tVHAX
A[MAX:4]
A[3:0]
tAVVH
tPHVH
tVHVL tVLVH
tVLQV
ADV#
tELVH tEHEL
tELQV tEHTZ
CE#
tGLQV tGHTZ
OE#
tELTV
tGLTV
tGLTX
WAIT
tGHQZ
tGLQX tAPA tAPA tAPA tEHQZ
tELQX tOH tOH tOH tOH
DQ[15:0]
tPHQV
RST#
Note: 1. WAIT shown active LOW (RCR[10] = 0).
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Figure 20: Synchronous 8- or 16-Word Burst Read (Non-MUX)
Latency count tCLK
tCH tCL
CLK
tAVCH tCHAX
A[MAX:0]
tCHVL tVLCH tCHVH
ADV#
tELCH
CE#
OE#
tGLTX tCHTV tCHTV
tGLTV
tCHTX
WAIT
tCHQV tCHQV tCHQV
tCHQX tCHQX
DQ[15:0]
RST#
Notes: 1. 8-word and 16-word burst are always wrap-only.

2. WAIT shown as active LOW (RCR[10] = 0) and asserted with data (RCR[8] = 0).
3. ADV# may be held LOW throughout the synchronous READ operation.
4. tAVQV, tELQV, and tVLQV apply to legacy-latching only.
5. tACC and tVLVH apply to clock-latching only.
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Figure 21: Synchronous Continuous Misaligned Burst Read (Non-MUX)
Latency count tCLK
tCH tCL
CLK
tAVCH tCHAX
A[MAX:0]
tCHVL tVLCH tCHVH
ADV#
tELCH
CE#
OE#
tGLTX tCHTV tCHTV tCHTV
tGLTV
tCHTX tCHTX
WAIT
tCHQV tCHQV
tCHQX
DQ[15:0] Q Q End of WL
RST#
Notes: 1. WAIT shown as active LOW (RCR[10] = 0) and asserted with data (RCR[8] = 0).
2. ADV# may be held LOW throughout the synchronous READ operation.
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Figure 22: Synchronous Burst with Burst Interrupt Read (Non-MUX)
Latency count tCLK
tCH tCL
CLK
tAVCH tCHAX tAVCH tCHAX
A[MAX:0]
tCHVL tVLCH
tCHVL tVLCH tCHVH
tVHVL tCHVH
ADV#
tELCH tELCH
CE#
OE#
tGLTV tCHTV tCHTV
tGLTX
tCHTX
WAIT
tCHQV tCHQV
tCHQX
tCHQX
DQ[15:0] Q Q Q
RST#
Notes: 1. WAIT shown as active LOW (RCR[10] = 0) and asserted with data (RCR[8] = 0).
2. A burst can be interrupted by toggling CE# or ADV#.
3. For no-wrap bursts, end-of-wordline WAIT states could occur (not shown in this figure).
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Figure 23: Asynchronous Single-Word Read
tAVAV tAVAV
tAVQV tAVQV
A[MAX:16] A A
tGLQX tGLQX
A/DQ[15:0] A Q A Q
tAVVH tAVVH
tVHAX
tVHAX
tPHVH
tVLQV tVLQV
tVHVL tVLVH tVLVH
ADV#
tOH
tOH
tELVH tEHQZ tELVH
tELQV tEHEL tELQV tEHQZ
CE#
tGLQV tGHQZ tGLQV tGHQZ
tVHGL tVHGL
OE#
tELTV tEHTZ tELTV tEHTZ
WAIT
tPHQV
RST#
Notes: 1. WAIT shown as active LOW (RCR[10] = 0).

2. Back-to-back READ operations shown.
3. CE# does not need to toggle between read cycles (i.e., tEHEL need not apply).
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Figure 24: Synchronous 8- or 16-Word Burst Read (A/D MUX)
Latency Count tCLK
tCH tCL
CLK
A[MAX:16] A
tCHQV tCHQV
tAVCH tCHAX tCHQV tCHQX tCHQX
A/DQ[15:0] A Q Q Q
tCHVL tVLCH tCHVH
ADV#
tELCH
CE#
tCHGL
OE#
tCHTV
tGLTV tCHTV
tGLTX
tCHTX tGHTV
WAIT
RST#

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Figure 25: Synchronous Continuous Misaligned Burst Read (A/D MUX)
Latency count tCLK
tCH tCL
CLK
A[MAX:16] A
tCHQV
tAVCH tCHAX tCHQV tCHQX
A/DQ[15:0] A Q Q End of WL Q
tCHVL tVLCH tCHVH
ADV#
tELCH
CE#
tCHGL
OE#
tCHTV
tGLTV tCHTV tCHTV
tGLTX
tCHTX tCHTX tGHTV
WAIT
RST#

Figure 26: Synchronous Burst with Burst-Interrupt (AD-Mux)
Latency count tCLK
tCH tCL
CLK
A[MAX:16] A A
tCHQV
tAVCH tCHAX tCHQV tCHQX tAVCH tCHAX
A/DQ[15:0] A Q Q A
tCHVL tVLCH tCHVH tCHVLtVLCH tCHVH
ADV#
tELCH
tELCH
CE#
tCHGL
OE#
tCHTV
tGLTV
tGLTX
WAIT
RST#
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Notes: 1. tAVQV, tELQV, and tVLQV apply to legacy-latching only.

3. A burst can be interrupted by toggling CE# or ADV#.
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AC Write Specifications
Table 40: AC Write Specifications

Notes 1 and 2 apply to all
RST# HIGH recovery to WE# LOW tPHWL 150 – ns 3
CE# setup to WE# LOW tELWL 0 – ns 10
WE# write pulse width LOW tWLWH 40 – ns 4
Data setup to WE# HIGH tDVWH 40 – ns
Address setup to WE# HIGH tAVWH 40 – ns
CE# hold from WE# HIGH tWHEH 0 – ns
Data hold from WE# HIGH tWHDX 0 – ns
Address hold from WE# HIGH tWHAX 0 – ns
WE# pulse width HIGH tWHWL 20 – ns 5
VPP setup to WE# HIGH tVPWH 200 – ns 3, 7
VPP hold from status read tQVVL 0 – ns 3, 7
WP# hold from status read tQVBL 0 – ns 3, 7
WP# setup to WE# HIGH tBHWH 200 – ns 3, 7
WE# HIGH to OE# LOW tWHGL 0 – ns 8
ADV# LOW to WE# HIGH tVLWH 55 – ns
WE# HIGH to read valid tWHQV tAVQV + 30 – ns 3, 6, 9
WRITE Operation to Asynchronous Read Transition
WE# HIGH to address valid tWHAV
Write to Synchronous Read Specification

WE# HIGH to CLK HIGH @ 110 MHz tWHCH 15 – ns 3, 6, 11
WE# HIGH to CE# LOW tWHEL 9 – ns 3, 6, 11
WE# HIGH to ADV# LOW tWHVL 7 – ns 3, 6, 11
Write Specifications with Clock Active
ADV# HIGH to WE# LOW tVHWL – 27 ns 11
CLK HIGH to WE# LOW tCHWL – 27 ns 11
Notes: 1. Write timing characteristics during erase suspend are the same as WRITE-only opera-
tions.
2. A WRITE operation can be terminated with either CE# or WE#.
4. Write pulse width LOW (tWLWH or tELEH) is defined from CE# or WE# LOW (whichever
occurs last) to CE# or WE# HIGH (whichever occurs first). Hence, tWLWH = tELEH = tWLEH
= tELWH.
5. Write pulse width HIGH (tWHWL or tEHEL) is defined from CE# or WE# HIGH (whichever
occurs first) to CE# or WE# LOW (whichever occurs last). Hence, tWHWL = tEHEL = tWHEL
= tEHW.
6. tWHCH must be met when transitioning from a WRITE cycle to a synchronous burst read.
In addition CE# or ADV# must toggle when WE# goes HIGH.
7. VPP and WP# must be at a valid level until erase or program success is determined.
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8. When performing a READ STATUS operation following any command that alters the sta-
tus register, tWHGL is 20ns.
9. Add 10ns if the WRITE operation results in an RCR or block lock status change for the
subsequent READ operation to reflect this change.
10. Either tVHWL or tCHWL is required to meet the specification depending on the address
latching mechanism; both of these specifications can be ignored if the clock is not tog-
gling during the WRITE cycle.
11. If ADV# remains LOW after the WRITE cycle completes, a new READ cycle will start.
Figure 27: Write Timing
A[MAX:16]
tAVWH
tWHDX
tDVWH tWHAX
A/DQ[15:0] A D A D
tAVVH tAVVH
tVLVH tVHAX tVLVH
tWHVH tVHAX
tVLWH
ADV#
tELWL tWHEH tELWL tWHEH
CE#
tWHAV
tVHWL tWLWH tWHWL tWLWH
WE#
OE#
tPHWL
RST#
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Figure 28: Write to Write (Non-Mux)
tAVWH tWHAX tAVWH tWHAX
Address
ADV#
tELWL tWHEH tELWL tWHEH
CE#
tWLWH tWHWL tWLWH
WE#
OE#
tDVWH tWHDX tDVWH tWHDX
DQ
tPHWL
RST#
tBHWH
WP#
Figure 29: Async Read to Write (Non-Mux)
Address A A
tVHVL
ADV#
tEHEL
CE#
OE#
tWHEH
tELWL
tVLWH tWLWH
WE#
tEHQZ
tGLQV
tAVQV tGHQZ
tELQV tOH tDVWH tWHDX
DQ[15:0] Q D
tGLTV tGHTZ
WAIT
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Figure 30: Write to Async Read (Non-Mux)
Address Write Address Read Address
ADV#
tELWL tEHEL
CE#
tAVWH tWHEH
tWLWH tWHAX
WE#
tWHGL
OE#
tGLTV tGHTZ
High-Z
WAIT
tGLQV
tAVQV
tEHQZ
tWHDX tELQV
tGHQZ
tDVWH tGLTX
tOH
DQ D Q
Figure 31: Sync Read to Write (Non-Mux)
tCHVL tCHVH tCHWL
CLK
tAVCH tCHAX tAVWH
Address
tELCH tEHEL
CE#
tVLCH
tVLVH tVHVL
ADV#
tWLWH
WE#
OE#
tCHQV tCHQV
tDVWH
tCHQX tCHQX tWHDX
DQ Q0 Q1 D
tCHTV
High-Z High-Z
WAIT
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Figure 32: Write to Sync Read (Non-Mux)
tWHCH/L
tVLCH/L
tELCH/L
CLK
tAVCH/L
A Write adddress Read adddress
tCHVL
tVHVL tCHVH
ADV#
tWHWL
tEHEL
tWHEL
CE#
tWLWH tWHVL
tCHWL
WE#
tWHGLa
OE#
tCHQV tCHQV
tDVWH tWHDX tCHQV tCHQX tCHQX tCHQX
DQ D Q0 Q1 Q2
tCHTV
tGLTV
WAIT
Figure 33: Write to Write (AD-Mux)
A[MAX:16]
tAVWH
tAVVH tDVWH tWHDX
A/DQ[15:0][A/D] A D A D
tVHAX tVLWH
ADV#
tELWL tELWL tWHEH
tWHEH
CE#
tWLWH ttWHWL
tWLWH
WE#
OE#
tPHWL
RST#
tBHWH
WP#
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Figure 34: Async Read to Write (AD-Mux)
A[MAX:16] A A
tAVQV tOH
A/DQ[15:0] A Q A D
tAVVH tVHVL
ADV#
tEHQZ
tELQV
tEHEL
CE# tVHGL
tGLQV tGHQZ
OE#
tWLWH
tDVWH tWHDX
tVLWH
WE#
tELTV tEHTZ tELTV tEHTZ
WAIT
Figure 35: Write to Async Read (AD-Mux)
tAVWH
A[MAX:16] A A
tWHDX
tDVWH tAVQV
A/DQ[15:0] A D A Q
tEHEL
tELQV tEHQZ
tWHEH
CE#
tVHVL
tVLWH
ADV#
tELWL tWLWH
WE#
tVHGL
tGLQV
tWHGL tGHQZ
OE#
tELTV tELTV tEHTZ
tEHTZ
WAIT
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Figure 36: Sync Read to Write (AD-Mux)
tCHVL tCHVH tCHWL
CLK
tAVCH tCHAX tAVWH
A[MAX:16] A A
tCHQV tCHQV
tCHQX tCHQX
A[15:0] A Q0 Q1 A D
tELCH tEHEL
CE#
tVLCH
tVLVH tVLWH
ADV#
tDVWH
tWHDX
WE#
OE#
tCHTV
High-Z High-Z
WAIT
Figure 37: Write to Sync Read (AD-Mux)
tWHCH/L
CLK
tAVWH
A[MAX:16] A A
tCHQV tCHQV tCHQV
tDVWH tWHDX
tCHQX tCHQX tCHQX
A[15:0] A D A Q0 Q1 Q2
tCHTV
tGLTV
WAIT
tVLWH tWHVL
tVHVL
ADV#
tEHEL
CE#
tWLWH tWHEL
tCHWL
WE#
tWHGL
OE#
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Electrical Specifications – Program/Erase Characteristics
Electrical Specifications – Program/Erase Characteristics
Table 41: Program/Erase Characteristics

Note 1 applies to all
VPPL or VPPH
Parameter Symbol Min Typ Max Units Notes
Word Programming
Program time Single word (first word) tPROG/W – 115 230 µs 2
Single word (subsequent word) 50 230
Buffered Programming
Program time Single word tPROG/W – 250 500 µs
One buffer (512 words) 90nm tPROG/PB – 2.15 4.3 ms
(128–
512Mb)
65nm 1.02 2.05
(128–
1024Mb)
45nm 0.57 1.14
(128–
1024Mb)
Buffer Enhanced Factory Programming (BEFP)
Program Single word 90nm tBEFP/W – 4.2 – µs 3
(128–
512Mb)
65nm 2.0
(128–
1024Mb)
45nm 0.93
(128–
1024Mb)
BEFP setup tBEFP/ 5 – – µs 3
SETUP
Erasing and Suspending
Erase time 128K-word parameter tERS/MAB – 0.9 4 s
Suspend la- Program suspend tSUSP/P – 20 30 µs
tency Erase suspend tSUSP/E – 20 30 µs
Blank Check
Main array Main array block tBC/MB – 3.2 – ms
block
Notes: 1. Typical values measured at TC = 25°C and nominal voltages. Performance numbers are
valid for all speed versions. Excludes overhead. Sampled, but not 100% tested.
2. Conventional word programming: First and subsequent words refer to first word and
subsequent words in control mode programming region.
3. Averaged over the entire device. BEFP is not validated at VPPL.
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Common Flash Interface

The common Flash interface (CFI) is part of an overall specification for multiple com-
mand set and control interface descriptions. System software can parse the CFI data-
base structure to obtain information about the device, such as block size, density, bus
width, and electrical specifications. The system software determines which command
set to use to properly perform a WRITE, BLOCK ERASE, or READ command, and to oth-
erwise control the device. Information in the CFI database can be viewed by issuing the
READ CFI command.
READ CFI Structure Output

The READ CFI command obtains CFI database structure information and always out-
puts it on the lower byte, DQ[7:0], for a word-wide (x16) Flash device. This CFI-compli-
ant device always outputs 00h data on the upper byte (DQ[15:8]).
The numerical offset value is the address relative to the maximum bus width that the
device supports, with a starting address of10h, which is a word address for x16 devices.
For example, at a starting address of 10h, a READ CFI command outputs an ASCII Q in
the lower byte and 00h in the higher byte.
In the following tables, address and data are represented in hexadecimal notation. In
addition, because the upper byte of word-wide devices is always 00h, the leading 00 has
been dropped and only the lower byte value is shown.
Table 42: Example of CFI Output (x16 Device) as a Function of Device and Mode
Hex Hex ASCII Value ASCII Value

Device Offset Code (DQ[15:8]) (DQ[7:0])
Address 00010: 51 00 Q
00011: 52 00 R
00012: 59 00 Y
00013: P_IDLO 00 Primary vendor ID
00014: P_IDHI 00
00015: PLO 00 Primary vendor table address
00016: PHI 00
00017: A_IDLO 00 Alternate vendor ID
00018: A_IDHI 00
: : : :
: : : :
Table 43: CFI Database: Addresses and Sections
Address Section Name Description

00001:Fh Reserved Reserved for vendor-specific information
00Address010h CFI ID string Command set ID (identification) and vendor data offset
0001Bh System interface information Timing and voltage
00027h Device geometry definition Layout
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Table 43: CFI Database: Addresses and Sections (Continued)
Address Section Name Description

P Primary Micron-specific extended query Vendor-defined informaton specific to the primary vendor
algorithm (offset 15 defines P which points to the primary
Micron-specific extended query table)
CFI ID String
The CFI ID string provides verification that the device supports the CFI specification. It
also indicates the specification version and supported vendor-specific command sets.
Table 44: CFI ID String
Hex Hex ASCII Value

Offset Length Description Address Code (DQ[7:0])
10h 3 Query unique ASCII string “QRY” 10: - -51 Q
11: - -52 R
12: - -59 Y
13h 2 Primary vendor command set and control 13: - -00 Primary vendor ID number
interface ID code;16-bit ID code for vendor- 14: - -02
specified algorithms
15h 2 Extended query table primary algorithm 15: - -0A Primary vendor table ad-
address 16: - -01 dress, primary algorithm
17h 2 Alternate vendor command set and control 17: - -00 Alternate vendor ID number
interface ID code; 0000h indicates no sec- 18: - -00
ond vendor-specified algorithm exists
19h 2 Secondary algorithm extended query table 19: - -00 Primary vendor table ad-
address; 0000h indicates none exists 1A: - -00 dress, secondary algorithm
System Interface Information
Table 45: System Interface Information
Hex Hex ASCII Value

1Bh 1 VCC logic supply minimum program/erase voltage 1Bh - -17 1.7V
bits 0–3 BCD 100mV
bits 4–7 BCD volts
1Ch 1 VCC logic supply maximum program/erase voltage 1Ch - -20 2.0V
bits 4– 7 BCD volts
1Dh 1 VPP [programming] supply minimum program/ 1Dh - -85 8.5V
erase voltage
bits 4–7 hex volts
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Table 45: System Interface Information (Continued)
Hex Hex ASCII Value

1Eh 1 VPP [programming] supply maximum program/ 1Eh - -95 9.5V
erase voltage
bits 4–7 hex volts
1Fh 1 n such that typical single word program timeout 1Fh - -06 64µs
= 2n μs
20h 1 n such that typical full buffer write timeout = 2n 20h - -0B (256, 2048µs (256,
μs 512 Mbit - 512 Mbit -
90nm; 1024 90nm; 1024
Mbit - Mbit - 65nm)
65nm) 1023µs (128,
- -0A (128, 256, 512 Mbit -
256, 512 65nm)
Mbit -
65nm)
21h 1 n such that typical block erase timeout = 2n ms 21h - -0A 1s
22h 1 n such that typical full chip erase timeout = 2n ms 22h - -00 NA
23h 1 n such that maximum word program timeout = 23h - -02 256µs
2n times typical
24h 1 n such that maximum buffer write timeout = 2n 24h - -02 (256, 8192µs (256,
times typical 512 Mbit - 512 Mbit -
90nm; 128, 90nm; 128, 256,
256, 512 512 Mbit -
Mbit - 65nm)
65nm) 4096µs (1024
- -01 (1024 Mbit - 65nm)
Mbit -
65nm)
25h 1 n such that maximum block erase timeout = 2n 25h - -02 4s
times typical
26h 1 n such that maximum chip erase timeout = 2n 26h - -00 NA
times typical
Device Geometry Definition
Table 46: Device Geometry
Hex Hex ASCII Value

27h 1 n such that device size in bytes = 2n. 27: (page 0 )
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Table 46: Device Geometry (Continued)
Hex Hex ASCII Value

28h 2 Flash device interface code assignment: n such that n + 28: - -01 x16
1 specifies the bit field that represents the device 29: - -00
width capabilities as described here:
bit 0: x8
bit 1: x16
bit 2: x32
bit 3: x64
bits 4–7: –
bits 8–15: –
2Ah 2 n such that maximum number of bytes in write buffer 2Ah - -0A 1024
= 2n 2Bh - -00
2Ch 1 Number of erase block regions (x) within the device: 2Ch (page 0 )
x = 0 indicates no erase blocking; the device erases in
bulk
x specifies the number of device regions with one or
more contiguous, same-size erase blocks
Symmetrically blocked partitions have one blocking re-
gion
2Dh 4 Erase block region 1 information: 2D: (page 0 )
bits 0–15 = y, y + 1 = number of identical-size erase 30:
blocks
bits 16–31 = z, region erase block(s) size are z x 256
bytes
31h 4 Erase block region 2 information: 31: (page 0 )
bits 0–15 = y, y + 1 = number of identical-size erase 34:
blocks
bits 16–31 = z, region erase block(s) size are z x 256
bytes
35h 4 Reserved for future erase block region information 35: (page 0 )
38:
Note: 1. See the bit field table.
Table 47: Block Region Map Information
128Mb 256Mb 512Mb 1Gb

Address Bottom Top Bottom Top Bottom Top Bottom Top
27: - -18 -- - -19 -- - -1A -- - -1B --
28: - -01 -- - -01 -- - -01 -- - -01 --
29: - -00 -- - -00 -- - -00 -- - -00 --
2A: - -0A -- - -0A -- - -0A -- - -0A --
2B: - -00 -- - -00 -- - -00 -- - -00 --
2C: - -01 -- - -01 -- - -01 -- - -01 --
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Table 47: Block Region Map Information (Continued)
128Mb 256Mb 512Mb 1Gb

2D: - -FF -- - -7F -- - -FF -- - -FF --
2E: - -00 -- - -00 -- - -00 -- - -01 --
2F: - -00 -- - -00 -- - -00 -- - -00 --
30: - -04 -- - -04 -- - -04 -- - -04 --
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Primary Micron-Specific Extended Query
Table 48: Primary Micron-Specific Extended Query
Hex Offset ASCII Value

P = 10Ah Length Description Address Hex Code (DQ[7:0])
(P+0)h 3 Primary extended query table, unique ASCII 10A: - -50 P
(P+1)h string: PRI 10B: - -52 R
(P+2)h
10C: - -49 I
(P+3)h 1 Major version number, ASCII 10D: - -31 1
(P+4)h 1 Minor version number, ASCII 10E: - -34 4
(P+5)h 4 Optional feature and command support (1 = yes; 10F: - -E6 (Non- –
(P+6)h 0 = no) Mux)
(P+7)h Bits 10–31 are reserved; undefined bits are 0 - -66 (A/D
(P+8)h If bit 31 = 1, then another 31-bit field of optional Mux)
features follows at the end of the bit 30 field 110: - -07 –
(90nm,
65nm)
111: - -00 –
112: - -00 –
Bit 0: Chip erase supported Bit 0 = 0 No
Bit 1: Suspend erase supported Bit 1 = 1 Yes
Bit 2: Suspend program supported Bit 2 = 1 Yes
Bit 3: Legacy lock/unlock supported Bit 3 = 0 No
Bit 4: Queued erase supported Bit 4 = 0 No
Bit 5: Instant individual block locking supported Bit 5 = 1 Yes
Bit 6: OTP bits supported Bit 6 = 1 Yes
Bit 7: Page mode read supported Bit 7 = 0 No: A/D Mux
Yes: Non-Mux
Bit 8: Synchronous read supported Bit 8 = 1 Yes
Bit 9: Simultaneous operations supported Bit 9 = 1 Yes
Bit 10: Reserved BIt 10 = 0 No
Bit 30: CFI links to follow Bit 30 = 0 No
Bit 31: another optional features field to follow. Bit 31 = 0 No
(P+9)h 1 Supported functions after suspend: read array, 113: - -01 –
status, query
Other supported options:
Bits 1–7 reserved; undefined bits are 0
Bit 0: Program supported after erase suspend Bit 0 = 1 Yes
(P+A)h 2 Block status register mask: 114: - -33 –
(P+B)h Bits 2 – 3 and 6 - 15 are reserved; undefined bits 115: (90nm, –
are 0 65nm)
Bit 0: Block lock bit status register active Bit 0 = 1 Yes
Bit 1: Block lock-down bit status active Bit 1 = 1 Yes
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Table 48: Primary Micron-Specific Extended Query (Continued)
Hex Offset ASCII Value

P = 10Ah Length Description Address Hex Code (DQ[7:0])
(P+C)h 1 VCC logic supply highest performance program/ 116: - -18 1.8V
erase voltage
Bits 4–7 BCD value in volts
(P+D)h 1 VPP optimum program/erase voltage 117: - -90 9.0V
Bits 0–3 BCD 100mV
Bits 4–7 hex value in volts
Table 49: One Time Programmable (OTP) Space Information
Hex Offset Hex ASCII Value

P = 10Ah Length Description Address Code (DQ[7:0])
(P+E)h 1 Number of OTP block fields in JEDEC ID space. 118: - -02 2
00h indicates that 256 OTP fields are available
OTP Field 1: 119: - -80 80h
This field describes user-available OTP bytes. 11A: - -00 00h
Some are preprogrammed with device-unique se-
1B: - -03 8 byte
rial numbers. Others are user-programmable.
Bits 0–15 point to the OTP lock byte (the first 11C: - -03 8 byte
byte).
(P+F)h The following bytes are factory preprogrammed
(P+10)h and user-programmable:
4
(P+11)h Bits 0–7 = lock/bytes JEDEC plane physical low ad-
(P+12)h dress.
Bits 8–15 = lock/bytes JEDEC plane physical high
address.
Bits 16–23 = n where 2n equals factory-preprog-
rammed bytes.
Bits 24–31 = n where 2n equals user-programma-
ble bytes.
(P+13)h 4 Protection Field 2: 11D: - -89 89h
(P+14)h Bits 0–31 point to the protection register physical 11E: - -00 00h
(P+15)h lock word address in the JEDEC plane.
11F: - -00 00h
(P+16)h The bytes that follow are factory or user-progam-
mable. 120: - -00 00h
(P+17)h 3 Bits 32–39 = n where n equals factory-program- 121: - -00 0

(P+18)h med groups (low byte). 122: - -00 0
(P+19)h Bits 40–47 = n where n equals factory program-
123: - -00 0
med groups (high byte).
Bits 48–55 = n where 2n equals factory-program-
med bytes/groups.
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Table 49: One Time Programmable (OTP) Space Information (Continued)

(P+1A)h 3 Bits 56–63 = n where n equals user-programmed 124: - -10 16
(P+1B)h groups (low byte). 125: - -00 0
(P+1C)h Bits 64–71 = n where n equals user-programmed
126: - -04 16
groups (high byte).
Bits 72–79 = n where n equals user programma-
ble bytes/groups.
Table 50: Burst Read Informaton

1 Page mode read capability: 127: - -05 (Non 32 byte (Non
Bits 7–0 = n where 2n hex value represents the Mux) Mux)
(P+1D)h number of read page bytes. See offset 28h for - -00 (A/D 0 (A/D Mux)
device word width to determine page mode data Mux)
output width. 00h indicates no read page buffer.
1 Number of synchronous mode read configuration 128: - -03
(P+1E)h fields that follow. 00h indicates no burst capabili- 3
ty.
1 Synchronous mode read capability configuration 129: - -02
1:
Bits 3–7 = reserved.
Bits 0–2 = n where 2n+1 hex value represents the
maximum number of continuous synchronous
reads when the device is configured for its maxi-
mum word width.
(P+1F)h A value of 07h indicates that the device is capa- 8
ble of continuous linear bursts that will output
data until the internal burst counter reaches the
end of the device’s burstable address space.
This fields’s 3-bit value can be written directly to
the RCR bits 0–2 if the device is configured for its
maximum word width. See offset 28h for word
width to determine the burst data output width.
1 Synchronous mode read capability configuration 12A: - -03 16
(P+20)h
2.
1 Synchronous mode read capability configuration 12B: - -07 Cont
(P+21)h
3.
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Table 51: Partition and Block Erase Region Information
Hex Offset
P = 10Ah Description Address
Bottom Top Optional Features and Commands Length Bottom Top
(P+22)h (P+22)h Number of device hardware partition regions 1 12C: 12C:
within the device:
x = 0: A single hardware partition device (no
fields follow).
x specifies the number of device partition regions
containing one or more contiguous erase block
regions
Table 52: Partition Region 1 Information: Top and Bottom Offset/Address
Hex Offset
(P+23)h (P+23)h Data size of this Partition Region information field: 2 12D: 12D:
(P+24)h (P+24)h (number of addressable locations, including this 12E: 12E:
field).
(P+25)h (P+25)h Number of identical partitions within the partition 2 12F: 12F:
(P+26)h (P+26)h region. 130: 130:
(P+27)h (P+27)h Number of PROGRAM or ERASE operations allowed 1 131: 131:
in a partition:
Bits 0–3 = number of simultaneous PROGRAM opera-
tions.
Bits 4–7 = number of simultaneous ERASE operations.
(P+28)h (P+28)h Simultaneous PROGRAM or ERASE operations al- 1 132: 132:
lowed in other partitions while a partition in this re-
gion is in program mode:
Bits 0–3 = number of simultaneous program opera-
tions.
(P+29)h (P+29)h Simultaneous PROGRAM or ERASE operations al- 1 133: 133:
lowed in other partitions while a partition in this re-
gion is in erase mode:
Bits 0–3 = number of simultaneous PROGRAM opera-
tions.
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Table 52: Partition Region 1 Information: Top and Bottom Offset/Address (Continued)
Hex Offset
(P+2A)h (P+2A)h Types of erase block regions in this partition region: 1 134: 134:
x = 0: no erase blocking; the partition region erases
in bulk.
x = number of erase block regions with contiguous,
same-size erase blocks.
Symmetrically blocked partitions have one blocking
region.
Partition size = (type 1 blocks) x (type 1 block sizes) +
(type 2 blocks) x (type 2 block sizes) +...+ (type n
blocks) x (type n block sizes).
(P+2B)h (P+2B)h Partition region 1 (erase block type 1) information: 4 135: 135:
(P+2C)h (P+2C)h Bits 0–15 = y, y+1 = number of identical-sized erase 136: 136:
(P+2D)h (P+2D)h blocks in a partition.
137: 137:
(P+2E)h (P+2E)h Bits 16–31 = z, where region erase block(s) size is z x
256 bytes. 138: 138:
(P+2F)h (P+2F)h Partition 1 (erase block type 1): 2 139: 139:

(P+30)h (P+30)h Minimum block erase cycles x 1000 13A: 13A:
(P+31)h (P+31)h Partition 1 (erase block type 1) bits per cell; internal 1 13B: 13B:
EDAC:
Bits 0–3 = bits per cell in erase region
Bit 4 = internal EDAC used (1 = yes, 0 = no)
Bits 5–7 = reserved for future use
(P+32)h (P+32)h Partition 1 (erase block type 1) page mode and syn- 1 13C: 13C:
chronous mode capabilities:
Bits 0 = page mode host reads permitted (1 = yes, 0 =
no)
Bit 1 = synchronous host reads permitted (1 = yes, 0 =
no)
Bit 2 = synchronous host writes permitted (1 = yes, 0
= no)
Bits 3–7 = reserved for future use
(P+33)h (P+33)h Partition 1 (Erase Block Type 1) programming region 6 13D: 13D:
(P+34)h (P+34)h information: 13E: 13E:
Bits 0 - 7 = x, 2x: programming region aligned size
(P+35)h (P+35)h 13F: 13F:
(bytes)
(P+36)h (P+36)h Bits 8 - 14 = reserved for future use 140: 140:
(P+37)h (P+37)h Bit 15 = legacy flash operation; ignore 0:7 141: 141:
(P+38)h (P+38)h Bit 16 - 23 = y: control mode valid size (bytes) 142: 142:
Bit 24 - 31 = reserved for future use
Bit 32 - 39 = z: control mode invalid size (bytes)
Bit 40 - 46 = reserved for future use
Bit 47 = legacy flash operation (ignore 23:16 and
39:32)
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Table 53: Partition and Erase Block Map Information
128Mb 256Mb 512Mb 1Gb

12C: - -01 -- - -01 -- - -01 -- - -01 --
12D: - -16 -- - -16 -- - -16 -- - -16 --
12E: - -00 -- - -00 -- - -00 -- - -00 --
12F: - -08 -- - -08 -- - -08 -- - -08 --
130: - -00 -- - -00 -- - -00 -- - -00 --
131: - -11 -- - -11 -- - -11 -- - -11 --
132: - -00 -- - -00 -- - -00 -- - -00 --
133: - -00 -- - -00 -- - -00 -- - -00 --
134: - -01 -- - -01 -- - -01 -- - -01 --
135: - -07 -- - -0F -- - -1F -- - -3F --
136: - -00 -- - -00 -- - -00 -- - -00 --
137: - -00 -- - -00 -- - -00 -- - -00 --
138: - -04 -- - -04 -- - -04 -- - -04 --
139: - -64 -- - -64 -- - -64 -- - -64 --
13A: - -00 -- - -00 -- - -00 -- - -00 --
13B: - -12 -- - -12 -- - -12 -- - -12 --
13C: - -02 Mux -- - -02 Mux -- - -02 Mux -- - -02 Mux --
- -03 Non - -03 Non - -03 Non - -03 Non
Mux Mux Mux Mux
13D: - -0A -- - -0A -- - -0A -- - -0A --
13E: - -00 -- - -00 -- - -00 -- - -00 --
13F: - -10 -- - -10 -- - -10 -- - -10 --
140: - -00 -- - -00 -- - -00 -- - -00 --
141: - -10 -- - -10 -- - -10 -- - -10 --
142: - -00 -- - -00 -- - -00 -- - -00 --
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Flowcharts
Flowcharts
Figure 38: Word Program Procedure
Start
Write 0x41,
(Setup)
word address
Write data,
(Confirm)
word address
Read status Program suspend

register loop
No
0 Yes
SR7 = Suspend
Full status check

(if desired)
Program
complete
Bus
Operation Command Comments
WRITE PROGRAM Data = 0x41
SETUP Address = Location to program
WRITE DATA Data = Data to program
Address = Location to program
READ None Status register data
Idle None Check SR7
1 = Write state machine ready
0 = Write state machine busy
Notes: 1. Repeat for subsequent word PROGRAM operations.

2. Full status register check can be done after each program or after a sequence of PRO-
GRAM operations.
3. Write 0xFF after the last operation to set to the read array state.
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Flowcharts
Figure 39: Word Program Full Status Check Procedure
Read status
register
1 VPP range
SR3 =
error
1 Program
SR4 =
error
1 Device protect
SR1 =
error
Program
successful
Note:
SR3 MUST be cleared before the write state machine will support further program attempts.
Bus
Idle None Check SR3
1 = VPP error
Idle None Check SR4
1 = Data program error
Idle None Check SR1
1 = Block locked; operation aborted
Note: 2. If an error is detected, clear the status register before continuing operations. Only the
CLEAR STAUS REGISTER command clears the status register error bits.
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Flowcharts
Figure 40: Program Suspend/Resume Procedure
Start
Write B0h Program

any address suspend
Write 70h
Read status
same partition
Read status
register
0
SR7 =
0 Program
SR2 =
completed
Write FFh
Read array
suspend partition
Read array
data
Done No
reading?
Yes
Write D0h Program Write FFh

any address resume programmed Read array
partition
Program
resumed Read array
data
Write 70h Read status

same partition
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Flowcharts
Bus
WRITE PROGRAM Data = B0h
SUSPEND Address = Block to suspend
WRITE READ STATUS Data = 70h
Address = Same partition
READ Status register data
Address = Suspended block
Standby Check SR7
Standby Check SR2
1 = Program suspended
0 = Program completed
WRITE READ ARRAY Data = FFh
Address = Any address within the suspended partition
READ Read array data from block other than the one being pro-
grammed
WRITE PROGRAM Data = D0h
RESUME Address = Suspended block
If the suspended partition was placed in read array mode:

WRITE READ STATUS Return partition to status mode:
Data = 70h
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Flowcharts
Figure 41: Buffer Programming Procedure
Start
Write 0xE9, base

(Setup)
colony address
Write word
count-1, base (BP load 1)
colony address;
(X = word count)
Write data,
(BP load 2)
word address
Word Yes
address in different
block?
No
X=X-1
No
X = 0?
Yes
Write data,
(Confirm) Read data
word address
(SR data),
block address
Word Yes
address in different 0
block? SR7 = ?
No
1
Yes Full status register

Data ? 0xD0?
check (if desired)
No Buffered program
abort
Buffered program
complete
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Flowcharts
Bus
WRITE BUFFERED Data = 0xE9
PROGRAM Addr = Colony base address
SETUP
WRITE BUFFERED Data = word count -11
PROGRAM Address = Block address
LOAD 1
WRITE2, 3 BUFFERED Data = Data to be programmed
PROGRAM Address = Word address
LOAD 2
WRITE4, 5 BUFFERED Data = 0xD0
PROGRAM Address = Address within block
CONFIRM
READ None Status register Data
Address = Block address
Notes: 1. D[8:0] is loaded as word count-1.

2. Repeat BUFFERED PROGRAM LOAD 2 until the word count is achieved. (Load up to 512
words.)
3. The command sequence aborts if the address of the BUFFERED PROGRAM LOAD 2 cycle
is in a different block from the address of the BUFFERED PROGRAM SETUP cycle.
4. The command sequence aborts if the address of the BUFFERED PROGRAM CONFIRM cy-
cle is in a different block from the address of the BUFFERED PROGRAM SETUP cycle. Al-
so, an abort will occur if the data of the BUFFERED PROGRAM CONFIRM cycle data is not
0xD0.
5. The read mode changes to status read on the BUFFERED PROGRAM CONFIRM command.
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Flowcharts
Figure 42: Buffered Enhanced Factory Programming (BEFP) Procedure
Setup Phase Program and Verify Phase Exit Phase
Data stream Read status

Start ready register
VPP applied, Initialize count:

No (SR7 = 0)
block unlocked X=0 BEFP exited?
Yes (SR7 = 1)
Write 0x80 @ Write data @
1ST word address 1ST word address Full status
check procedure
Write 0xD0 @ Increment count:

1ST word address X=X+1 Program
complete
BEFP setup No
delay X = 512?
Yes
Read status
register Read status
register
Yes (SR7 = 0) No (SR0 = 1)

BEFP setup
successful? Program
done?
No (SR7 = 1)
Yes (SR0 = 0)
Check VPP, lock
errrors (SR3,1)
No
Last data?
Exit Yes
Write 0xFFFF,
address in
different block
within partition
Bus
Operation Action Comments
Setup Phase
WRITE Unlock block VPPH applied to VPP
WRITE BEFP setup Data = 0x80 @ first word address1
WRITE BEFP confirm Data = 0xD0 @ first word address
READ Status register Data = Status register data
Adress = First word address
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Flowcharts
Bus
Operation Action Comments
Standby BEFP setup Check SR7:
done? 0 = BEFP ready
1 = BEFP not ready
Standby Error condi- If SR7 is set, check:
tion check SR3 set = V PP error
SR1 set = Locked block
Program and Verify Phase
Address = First word address
Standby Data stream Check SR0:
ready? 0 = Ready for data
1 = Not ready for data
Standby Initialize X=0
count
WRITE Load buffer Data = Data to program
Address = First word address2
Standby Increment X=X+1
count
Standby Buffer full? X = 512?
Yes = Read SR0
No = Load next data word
Standby Program Check SR0:
done? 0 = Program done
1 = Program in progress
Standby Last data? No = Fill buffer again
Yes = Exit
WRITE Exit program Data = 0xFFFF @ address not in current block
and verify
phase
Exit Phase
Standby Check exit sta- Check SR7:
tus 0 = Exit not completed
1 = Exit completed
Notes: 1. Repeat for subsequent blocks.

2. After BEFP exit, a full status register check can determine if any program error occurred.
3. See the Word Program Full Status Register Check Procedure flowchart.
4. Write 0xFF to enter read array state.
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Flowcharts
Figure 43: Block Erase Procedure
Start
Write 0x20,
(Block erase)
block address
Write 0xD0,
(Erase confirm)
block address
Read status Suspend erase

register loop
No
0 Suspend Yes
SR7 =
erase?
Full erase status

check (if desired)
Block erase
complete
Bus
WRITE BLOCK ERASE Data = 0x20
SETUP Address = Block to be erased
WRITE ERASE CON- Data = 0xD0
FIRM Address = Block to be erased
Idle None Check SR7
Notes: 1. Repeat for subsequent block erasures.

2. Full status register check can be done after each block erase or after a sequence of block
erasures.
3. Write 0xFF after the last operation to enter read array mode.
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Flowcharts
Figure 44: Block Erase Full Status Check Procedure
Read status
register
1 VPP range
SR3 =
error
1, 1 Command
SR4, 5 =
sequence error
1 Block erase
SR5 =
error
1 Block locked
SR1 =
error
Block erase
successful
Bus
Idle None Check SR3
1 = VPP range error
Idle None Check SR[4, 5]
Both 1 = Command sequence error
Idle None Check SR5
1 = Block erase error
Idle None Check SR1
1 = Attempted erase of locked block; erase aborted
Notes: 1. Only the CLEAR STAUS REGISTER command clears the SR[1, 3, 4, 5].
2. If an error is detected, clear the status register before attempting an erase retry or other
error recovery.
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Flowcharts
Figure 45: Erase Suspend/Resume Procedure
Start
Write 0x70, (Read status)

same partition
Write 0xB0, (Erase

any address suspend)
Read status
register
0
SR7 =
0 Erase
SR6 =
completed
Read Read or Program

program?
Read array No Program

data loop
Done
(Erase resume) Write 0xD0,

any address
Erase Write 0xFF,

resumed erased partition (Read array)
Write 0x70, Read array

(Read status)
same partition data
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Flowcharts
Bus
WRITE READ STATUS Data = 0x70
Address = Any partition address
WRITE ERASE SUS- Data = 0xB0
PEND Address = Same partition address as above
Idle None Check SR7
Idle None Check SR6
1 = Erase suspended
0 = Erase completed
WRITE Any READ or Data = Command for desired operation
PROGRAM Address = Any address within the suspended partition
READ or None Read array or program data from/to block other than the one
WRITE being erased
WRITE PROGRAM RE- Data = 0xD0
SUME Address = Any address
If the suspended partition was placed in read array mode or a program loop:
WRITE READ STATUS Return partition to status mode:
REGISTER Data = 0x70
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Flowcharts
Figure 46: Block Lock Operations Procedure
Start
Write 0x60, (Lock setup)

block address
Write either
0x01/0xD0/0x2F, (Lock confirm)
block address
Write 0x90 (Read device ID)

Optional
Read block
lock status
Locking No
change?
Yes
Write 0xFF (Read array)

partition address
Lock change
complete
Bus
WRITE LOCK SETUP Data = 0x60
Address = Block to lock/unlock/lock-down
WRITE LOCK, UN- Data = 0x01 (BLOCK LOCK)
LOCK, or Data = 0xD0 (BLOCK UNLOCK)
LOCK-DOWN Data = 0x2F (LOCK-DOWN BLOCK)
CONFIRM Address = Block to lock/unlock/lock-down
WRITE (op- READ DEVICE Data = 0x90
tional) ID Address = Block address + offset 2
READ (option- BLOCK LOCK Block lock status data
al) STATUS Address = Block address + offset 2
Idle None Confirm locking change on D[1, 0]
WRITE READ ARRAY Data = 0xFF
Address = Block address
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Flowcharts
Figure 47: Protection Register Programming Procedure
Start
Write 0xC0,
(Program setup)
PR address
Write PR
(Confirm data)
address and data
Read status
register
0
SR7 =
Full status check

(if desired)
Program
complete
Bus
WRITE PROGRAM PR Data = 0xC0
SETUP Address = First location to program
WRITE PROTECTION Data = Data to program
PROGRAM Address = Location to program
Idle None Check SR7
Notes: 1. PROGRAM PROTECTION REGISTER operation addresses must be within the protection
register address space. Addresses outside this space will return an error.
2. Repeat for subsequent PROGRAM operations.
3. Full status register check can be done after each PROGRAM operation or after a se-
quence of PROGRAM operations.
4. Write 0xFF after the last operation to set to the read array state.
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Flowcharts
Figure 48: Protection Register Programming Full Status Check Procedure
Read status
register data
1 VPP range
SR3 =
error
1 Program
SR4 =
error
1 Register locked;
SR1 =
program aborted
Program
successful
Bus
Idle None Check SR3
1 = VPP error
Idle None Check SR4
1 = Programming error
Idle None Check SR1
1 = Register locked; operation aborted
Notes: 1. Only the CLEAR STAUS REGISTER command clears SR[1, 3, 4].
2. If an error is detected, clear the status register before attempting a program retry or
other error recovery.
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Flowcharts
Figure 49: Blank Check Procedure
Start
Write 0xBC,
block address
Write 0xD0,
block address
Read status
register
No
0
SR7 =
Full blank check

status read
Blank check
Bus
WRITE BLANK CHECK Data = 0xBC
SETUP Address = Block to be read
WRITE BLANK CHECK Data = 0xD0
CONFIRM Address = Block to be read
Idle None Check SR7
Notes: 1. Repeat for subsequent block blank check.

2. Full status register check should be read after blank check has been performed on each
block.
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Flowcharts
Figure 50: Blank Check Full Status Check Procedure
Read status
register
1, 1 Command
SR[4:5] =
sequence error
1 Blank check
SR[5] =
error
Blank check
successful
Bus
Idle None Check SR[4, 5]
1 = Command sequence error
Idle None Check SR5
1 = Blank check error
Notes: 1. SR[1, 3] must be cleared before the write state machine will allow blank check to be per-
formed.
2. Only the CLEAR STAUS REGISTER command clears SR[1, 3, 4, 5].
3. If an error is detected, clear the status register before attempting a blank check retry or
other error recovery.
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AADM Mode
AADM Mode
AADM Feature Overview
The following is a list of general requirements for AADM mode.
Feature availability. AADM mode is available in devices that are configured as A/D
MUX. With this configuration, AADM mode is enabled by setting a specific volatile bit in
the read configuration register.
High-address capture (A[MAX:17]). When AADM mode is enabled, A[MAX:17] and
A[16:1] are captured from the A/ DQ[15:0] balls. The selection of A[MAX:17] or A[16:1] is
determined by the state of the OE# input, as A[MAX:17] is captured when OE# is at V IL.
READ and WRITE cycle support. In AADM mode, both asynchronous and synchronous
cycles are supported.
Customer requirements. For AADM operation, the customer is required to ground
A[MAX:17].
Other characteristics. For AADM, all other device characteristics (program time, erase
time, ICCS, etc.) are the same as A/D MUX unless otherwise stated.
AADM Mode Enable (RCR[4] = 1)

Setting RCR[4] to its non-default state (1b) enables AADM mode. The default device
configuration upon reset or power-up is A/D MUX mode. Upon setting RCR[4] = 1, the
upper addresses, A[MAX:17] are latched. All 0s are latched by default.
Bus Cycles and Address Capture

AADM bus operations have one or two address cycles. For two address cycles, the upper
address (A[MAX:17]) must be issued first, followed by the lower address (A[16:1]). For
bus operations with only one address cycle, only the lower address is issued. The upper
address that applies is the one that was most recently latched on a previous bus cycle.
For all READ cycles, sensing begins when the lower address is latched, regardless of
whether there are one or two address cycles.
In bus cycles, the external signal that distinguishes the upper address from the lower
address is OE#. When OE# is at V IH, a lower address is captured; when OE# is at V IL, an
upper address is captured.
When the bus cycle has only one address cycle, the timing waveform is similar to A/D
MUX mode. The lower address is latched when OE# is at V IH, and data is subsequently
outputted after the falling edge of OE#.
When the device initially enters AADM mode, the upper address is internally latched as
all 0s.
WAIT Behavior
The WAIT behavior in AADM mode functions the same as the legacy non-MUX WAIT
behavior (A/D MUX WAIT behavior is unique). In other words, WAIT will always be
driven whenever DQ[15:0] is driven, and WAIT will tri-state whenever DQ[15:0] tri-state.
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AADM Mode
In asynchronous mode (RCR[15] = 1b), WAIT always indicates valid data when driven.
In synchronous mode (RCR[15] = 0b), WAIT indicates valid data only after the latency
count has lapsed and the data output data is truly valid.
Asynchronous READ and WRITE Cycles

For asynchronous READ and WRITE cycles, ADV# must be toggled HIGH-LOW-HIGH a
minimum of one time and a maximum of two times during a bus cycle. If ADV# is tog-
gled LOW twice during a bus cycle, OE# must be held LOW for the first ADV# rising edge
and OE# must be held HIGH for the second ADV# rising edge. The first ADV# rising edge
(with OE# LOW) captures A[MAX:16]. The second ADV# rising edge (with OE# HIGH)
captures A[16:1]. Each bus cycle must toggle ADV# HIGH-LOW-HIGH at least one time
in order to capture A[16:1]. For asynchronous reads, sensing begins when the lower ad-
dress is latched.
During asynchronous cycles, it is optional to capture A[MAX:17]. If these addresses are
not captured, then the previously captured A[MAX:17] contents will be used.
Asynchronous READ Cycles

For AADM, note that asynchronous read access is from the rising edge of ADV# rather
than the falling edge (tVHQV rather than tVLQV).
Table 54: AADM Asynchronous and Latching Timings
Symbol MIN (ns) MAX (ns) Notes

tGLQV 20
tPHQV 150
tELQX 0
tGLQX 0
tEHQZ 9
tGHQZ 9
tOH 0
tEHEL 7
tELTV 11
tEHTZ 9
tGLTV 7
tGLTX 0
tGHTZ 9
tAVVH 5
tELVH 9
tVLVH 7
tVHVL 7
tVHAX 5
tVHGL 3
tVHQV 96 1
tPHVH 30
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AADM Mode
Table 54: AADM Asynchronous and Latching Timings (Continued)
Symbol MIN (ns) MAX (ns) Notes

tGHVH 3
tGLVH 3
tVHGH 3
Notes: 1. A READ cycle may be restarted prior to completing a pending READ operation, but this
may occur only once before the sense operation is allowed to complete.
2. tVHQV applies to asynchronous read access time.
Figure 51: AADM Asynchronous READ Cycle (Latching A[MAX:0])
A/DQ[15:0] A[MAX:16] A[15:0] DQ[15:0]

tAVVH tVHAX tAVVH tVHAX
tVLVH tVHVL tVLVH tVHQV
ADV#
tEHQZ
tELVH tEHEL
CE#
tGHQZ
tGLQX
tGLVH tVHGH tGHVH tVHGL tGLQV tGHVH + tVHGL
OE#
tGLTV tGHTZ
tGLTX tEHTZ
WAIT
Notes: 1. CE# need not be de-asserted at beginning of the cycle if OE# does not have output con-
trol.
2. Diagram shows WAIT as active LOW (RCR[10] = 0).
Figure 52: AADM Asynchronous READ Cycle (Latching A[15:0] only)
A/DQ[15:0] A[15:0] DQ[15:0]

tAVVH tVHAX
tVLVH tVHQV
ADV#
tEHQZ
tELVH tEHEL
CE#
tGHQZ
tGLQX
tVHGL tGLQV tVHGH + tGHVL
OE#
tGLTV tGHTZ
tGLTX tEHTZ
WAIT
Notes: 1. Diagram shows WAIT as active LOW (RCR[10] = 0).
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AADM Mode
2. Without latching A[MAX:17] in the asynchronous READ cycle, the previously latched
A[MAX:17] applies.
Asynchronous WRITE Cycles
Table 55: AADM Asynchronous Write Timings
Symbol MIN (ns)

tPHWL 150
tELWL 0
tWLWH 40
tDVWH 40
tWHEH 0
tWHDX 0
tWHWL 20
tVPWH 200
tWVVL 0
tBHWH 200
tWHGL 0
tGHWL 0
Notes: 1. A READ cycle may be restarted prior to completing a pending READ operation, but this
may occur only once before the sense operation is allowed to complete.
2. tVHQV applies to asynchronous read access time.
Figure 53: AADM Asynchronous WRITE Cycle (Latching A[MAX:0])
tWHDX
A/DQ[15:0] A[MAX:16] A[15:0] DQ[15:0]
ADV#
tWHEH
CE#
OE#
tGHWL tDVWH tELWL
tWHGL
tELWL tWLWH tWHWL
WE#
tBHWH
WP# tPHWL
RST#
Note: 1. CE# need not be de-asserted at beginning of cycle if OE# does not have output control.
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AADM Mode
Figure 54: AADM Asynchronous WRITE Cycle (Latching A[15:0] only)
tWHDX
A/DQ[15:0] A[15:0] DQ[15:0]
ADV#
tWHEH
CE#
OE#
tDVWH tELWL
tWHGL
tELWL tWLWH tWHWL
WE#
tBHWH
WP# tPHWL
RST#
Note: 1. Without latching A[MAX:16] in the WRITE cycle, the previously latched A[MAX:16] ap-
plies.
Synchronous READ and WRITE Cycles

Just as asynchronous bus cycles, synchronous bus cycles (RCR[15] = 0b) can have one or
two address cycles. If the are two address cycles, the upper address must be latched first
with OE# at V IL followed by the lower address with OE# at V IH. If there is only one ad-
dress cycle, only the lower address will be latched and the previously latched upper ad-
dress applies. For reads, sensing begins when the lower address is latched, but for syn-
chronous reads, addresses are latched on a rising clock CLK instead of a rising ADV#
edge.
For synchronous bus cycles with two address cycles, it is not necessary to de-assert
ADV# between the two address cycles. This allows both the upper and lower address to
be latched in only two clock periods.
Synchronous READ Cycles

For synchronous READ operation, the specifications in the AADM Asynchronous and
Latching Timings Table also apply.
Table 56: AADM Synchronous Timings
Target (104 MHz) Target (104 MHz)

Symbol Min (ns) Max (ns) Notes
tCLK 9
tRISE/tFALL 1.5 6
tAVCH 3
tVLCH 3
tELCH 3.5
tCHQV 7
tCHQX 2
tCHAX 5 5
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AADM Mode
Table 56: AADM Synchronous Timings (Continued)
Target (104 MHz) Target (104 MHz)

Symbol Min (ns) Max (ns) Notes
tCHTV 7
tCHVL 2.5
tCHTX 2
tCHVH 2
tCHGL 2.5 4, 5
tVLVH tCLK 2× tCLK 3, 4
tVHCH 3
tCHGH 2
tGHCH 2
tGLCH 3
Notes: 1. In synchronous burst READ cycles, the asynchronous OE# to ADV# setup and hold times
must also be met (tGHVH and tVHGL) to signify that the address capture phase of the
bus cycle is complete.
2. A READ cycle may only be terminated (prior to the completion of sensing data) one time
before a full bus cycle must be allowed to complete.
3. The device must operate down to 9.6 MHz in synchronous burst mode.
4. During the address capture phase of a read burst bus cycle, OE# timings relative to CLK
shall be identical to those of ADV# relative to CLK.
5. To prevent A/D bus contention between the host and the memory device, OE# may only
be asserted LOW after the host has satisfied the ADDR hold spec, tCHAX.
6. Rise and fall time specified between VIL and VIH.
Figure 55: AADM Synchronous Burst READ Cycle (ADV# De-asserted Between Address Cycles)
A/DQ[15:0] A[MAX:16] A[15:0] DQ[15:0] DQ[15:0] A

Latency count
tCHAX tAVCH tCHAX
tAVCH tCHQV tCHQX
CLK
tVLCH tVLCH
tCHVL tCHVL
tCHVH tCHVH
ADV#
tELCH
CE#
tGLCH tCHGH tGHCH tCHGL
OE#
WE#
tGLTV tCHTV tCHTX
tGLTX
WAIT
Notes: 1. CE# need not be de-asserted at beginning of cycle if OE# does not have output control.
2. Diagram shows WAIT as active LOW (RCR[10] = 0) and asserted with data (RCR[8] = 0).
3. For no-wrap bursts, end-of-wordline WAIT states could occur (not shown).
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AADM Mode
Figure 56: AADM Synchronous Burst READ Cycle (ADV# Not De-asserted Between Address Cycles)
A/DQ[15:0] A[MAX:16] A[15:0] DQ[15:0] DQ[15:0] A

tAVCH tAVCH Latency count
tCHAX tCHAX
tCHQV tCHQX
CLK
tCHVL
tVLCH tCHVH
ADV#
tELCH
CE#
tGHCH
tGLCH tCHGH tCHGL
OE#
WE#
tGLTV tCHTV tCHTX
tGLTX
WAIT
Notes: 1. CE# need not be de-asserted at beginning of cycle if OE# does not have output control.
2. Diagram shows WAIT as active LOW (RCR[10] = 0) and asserted with data (RCR[8] = 0).
Figure 57: AADM Synchronous Burst READ Cycle (Latching A[15:0] only)
A/DQ[15:0] A[15:0] DQ[15:0] DQ[15:0] A

Latency count
tCHAX
tAVCH tCHQV tCHQX
CLK
tVLCH
tCHVL
tCHVH
ADV#
tELCH
CE#
tCHGL
OE#
WE#
tGLTV tCHTV tCHTX
tGLTX
WAIT
Notes: 1. Diagram shows WAIT as active LOW (RCR[10] = 0) and asserted with data (RCR[8] = 0).
3. Without latching A[MAX:16] in the synchronous READ cycle, the previously latched
A[MAX:16] applies.
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AADM Mode
Synchronous WRITE Cycles

For synchronous writes, only the address latching cycle(s) are synchronous. Synchro-
nous address latching is depicted in the Synchronous READ Cycles.
The actual WRITE operation (rising WE# edge) is asynchronous and is independent of
CLK. Asynchronous writes are depicted in Asynchronous WRITE Cycles.
System Boot
Systems that use the AADM mode will boot from the bottom 128KB of device memory
because A[MAX:17] are expected to be grounded in-system. The 128KB boot region is
sufficient to perform required boot activities before setting RCR[4] to enable AADM
mode.
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Ordering Information
Ordering Information
Figure 58: Part Number Chart for G18 Components
PC 28F 512 G 18 F F
Package Designator Shipping Media

PC = Easy BGA, RoHS E = Tray
F = Tape and Reel
Product Line Designator Interface

28F = Micron Flash Memory F = Non-Mux
A = AD-Mux
Device Density Configuration Voltage

512 = 512Mb, x16 18 = 1.8 core and I/O
256 = 256Mb, x16
128 = 128Mb, x16 NOR Flash Product Family
00A = 1Gb, x16 G = StrataFlash Embedded Memory
Table 57: Valid Line Items
Shipping
Part Number Density Package Interface Media
PC28F128G18FE 128Mb Easy BGA Non-Mux Tray
PC28F128G18FF 128Mb Easy BGA Non-Mux Tape and Reel
PC28F256G18AE 256Mb Easy BGA AD-Mux Tray
PC28F256G18AF 256Mb Easy BGA AD-Mux Tape and Reel
PC28F00AG18FE 1Gb Easy BGA Non-Mux Tray
PC28F00AG18FF 1Gb Easy BGA Non-Mux Tape and Reel
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Revision History
Revision History
Rev. E – 8/11
• CFI ID string table, hex offset 13h: Changed address 13 hex code to 00; changed ad-
dress 14 hex code to 02.
• Table: DC Voltage Characteristics and Operating Conditions: Changed V IL Max to 0.45;
changed V IH Min to V CCQ - 0.45.
Rev. D – 5/11
• Revised for reuse.
Rev. C – 2/11
• Added AAD-mux description.
Rev. B – 12/10
• Made miscellaneous text edits and formatting improvements.
Rev. A – 12/10
• Initial release.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900

www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
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128Mb, 256Mb, 512Mb, 1Gb StrataFlash Memory

Micron StrataFlash Embedded Memory

This datasheet has been downloaded from http://www.digchip.com at this page

Table 51: Partition and Block Erase Region Information .................................................................................. 88

Configuration and Memory Map

Table 1: Main Array Memory Map – 128Mb, 256Mb

Table 1: Main Array Memory Map – 128Mb, 256Mb (Continued)

Table 2: Main Array Memory Map – 512Mb, 1Gb

Table 2: Main Array Memory Map – 512Mb, 1Gb (Continued)

Table 3: Device ID Codes

Density Product Device Identifier Code (Hex)

Figure 1: 64-Ball Easy BGA (8mm x 10mm x 1.2mm)

Note: 1. All dimensions are in millimeters.

Notes: 1. A1 is the least significant address bit.

Table 4: Signal Descriptions

Symbol Type Description

Table 5: Bus Control Signals

Figure 3: Main Array Word Lines

16-Word sense group

16-bit data word

256 bits Bit lines

Figure 4: Wrap/No-Wrap Example

16-bit data word

Figure 5: End-of-Wordline Delay

Figure 6: Two-Cycle Command Sequence

Address Partition A Partition A Partition B

D/Q Setup Confirm 00FFh

Figure 7: Single-Cycle Command Sequence

Address Partition A Partition A Partition B

D/Q Setup 00FFh

Figure 8: READ Cycle Between WRITE Cycles

Address Partition A Partition B Partition A

D/Q Setup Read data Confirm

Figure 9: Illegal Command Sequence

Address Partition A Partition B Partition A Partition A

D/Q Setup Write data Confirm Status

Table 6: Command Set

Table 6: Command Set (Continued)

Table 7: Status Register Bit Definitions (Default Value = 0080h)

Bit Name Description

Clear Status Register

Table 8: CLEAR STATUS REGISTER Command Bus Cycles

Read Configuration Register

Table 9: Read Configuration Register Bit Definitions (Default Value = BFCFh)

Bit Name Description

Table 10: Supported Clock Frequencies

Table 10: Supported Clock Frequencies (Continued)

Programming the Read Configuration Register

Table 11: PROGRAM READ CONFIGURATION REGISTER Bus Cycles

Extended Configuration Register

Bit Name Description

Output Driver Control

Table 13: Output Driver Control Characteristics

Programming the Extended Configuration Register

Table 14: Program Extended Configuration Register Command Bus Cycles

Table 15: READ MODE Command Bus Cycles

Issuing the READ ID command to a partition that is actively programming or erasing

Table 16: Device Information

Device Information Address Bus Data Bus