Datasheetsvf PDF
Datasheetsvf PDF
Datasheetsvf PDF
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 15 x 15 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 4.0 x 4.0 MILS
Emitter Bonding Pad Area 5.5 x 5.5 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
53,730
BACKSIDE COLLECTOR