6/15/2020 Multiple Choice Questions and Answers on FET - Electronics Post

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Multiple Choice Questions and Answers on FET ( Field
Effect Transistors )

In addition to reading the questions and answers on my

site, I would suggest you to check the following, on
amazon, as well:

Question Bank in Electronics & Communication

Engineering by Prem R Chadha
A Handbook on Electronics Engineering –

Illustrated Formulae & Key Theory Concepts
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Q1. A JFET has three terminals, namely …………

Swi

Offeri
20 years of experience
and p
Switchgears: main, ventilation, distri
servic control, automation and more
AN-ELEC

AN-EL

1. cathode, anode, grid

Categories
2. emitter, base, collector Ampli er (10)
Amplitude Modulation (18)
3. source, gate, drain
Angle Modulation (3)
4. none of the above
Basic Electrical
Engineering (1)
Answer : 3
Basic electronics Solved
problems (8)
Q2. A JFET is similar in operation to …………. valve
Big Data (2)
Blogging (1)
1. diode
Boolean Logic (2)
2. pentode Capacitors (2)
3. triode Career Advice (4)
4. tetrode Combinational Circuit (7)
Communication (47)
Answer : 2
Computer Networking (73)
Conversion Rate
Q3. A JFET is also called …………… transistor Optimization (2)
Converters (1)
1. unipolar CRO (5)
2. bipolar DC-DC Converters (2)

3. unijunction Diac (1)

Differential Ampli er (1)
4. none of the above
Digital multiplexing (1)
Answer : 1 Electric Current and Ohm's
Law (1) 
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Electronics and
Q4. A JFET is a ………… driven device
Communication
Engineering Questions and
1. current Answers (3)

2. voltage Electronics Instruments (1)

Electronics Questions and
3. both current and voltage
Answers (20)
4. none of the above Filter Circuits (9)
Founder Speaks (3)
Answer : 2
GATE Questions and
Answers (1)
Q5. The gate of a JFET is ………… biased
Integrated Circuits (7)
Interview (8)
1. reverse
JK Flip Flop (3)
2. forward Logic circuits (1)
3. reverse as well as forward Logic Gates and Boolean
Algebra (10)
4. none of the above
Long Questions and
Answer : 1 Answers (3)
MCQ (3)

Q6. The input impedance of a JFET is …………. that of Multiple Choice Questions
and Answers (57)
an ordinary transistor
Number System (1)
Operational Ampli er (3)
1. equal to
Oscilloscopes (2)
2. less than PCB (32)
3. more than Popular (3)
4. none of the above Product Reviews (1)
Relay (2)
Answer : 3
Resistors (4)
SCR (3)
Q7. In a p-channel JFET, the charge carriers are
Semiconductor (6)
………….. Semiconductor Diode (7)
Sequential Circuit (3)
1. electrons Short Questions and
2. holes Answers (15)
Signal Processing (3)
3. both electrons and holes
Sinusoidal Oscillator (3)
4. none of the above
Special Purpose Diodes (1)
Answer : 2 Switching Circuits (2)

Tech (16)
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Tech News (2)

Q8. When drain voltage equals the pinch-off-voltage,
Transistor (10)
then drain current …………. with the increase in drain
Triac (1)
voltage Uncategorized (9)
VLSI Design (5)
1. decreases
Voltage Regulator (11)
2. increases Voltage Stabilizer (1)
3. remains constant Voltage Stabilizer (1)

4. none of the above Waveform coding

techniques (2)
Answer : 3 Zener Diode (1)

Q9. If the reverse bias on the gate of a JFET is

increased, then width of the conducting channel
…………..

1. is decreased
2. is increased
3. remains the same
4. none of the above

Answer : 1

Q10. A MOSFET has …………… terminals

1. two
2. ve
3. four
4. three

Answer : 4

Q11. A MOSFET can be operated with ……………..

1. negative gate voltage only

2. positive gate voltage only
3. positive as well as negative gate voltage
4. none of the above

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Answer : 3

Q12. A JFET has ……….. power gain

1. small
2. very high
3. very small
4. none of the above

Answer : 2

Q13. The input control parameter of a JFET is

……………

1. gate voltage
2. source voltage
3. drain voltage
4. gate current

Answer : 1

Q14. A common base con guration of a pnp transistor

is analogous to ………… of a JFET

1. common source con guration

2. common drain con guration
3. common gate con guration
4. none of the above

Answer : 3

Q15. A JFET has high input impedance because …………

1. it is made of semiconductor material

2. input is reverse biased
3. of impurity atoms
4. none of the above 
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Answer : 2

Q16. In a JFET, when drain voltage is equal to pinch-off

voltage, the depletion layers ………

1. almost touch each other

2. have large gap
3. have moderate gap
4. none of the above

Answer : 1

Q17. In a JFET, IDSS is known as …………..

1. drain to source current

2. drain to source current with gate shorted
3. drain to source current with gate open
4. none of the above

Answer : 2

Q18. The two important advantages of a JFET are

…………..

1. high input impedance and square-law property

2. inexpensive and high output impedance
3. low input impedance and high output impedance
4. none of the above

Answer : 1

Q19. …………. has the lowest noise-level

1. triode
2. ordinary trnsistor
3. tetrode
4. JFET 
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Answer : 4

Q20. A MOSFET is sometimes called ………. JFET

1. many gate
2. open gate
3. insulated gate
4. shorted gate

Answer : 3

Q21. Which of the following devices has the highest

input impedance?

1. JFET
2. MOSFET
3. Crystal diode
4. ordinary transistor

Answer : 2

Q22. A MOSFET uses the electric eld of a ………. to

control the channel current

1. capacitor
2. battery
3. generator
4. none of the above

Answer : 1

Q23. The pinch-off voltage in a JFET is analogous to

………. voltage in a vacuum tube

1. anode
2. cathode
3. grid cut off 
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4. none of the above

Answer : 3

Q24. This question will be available soon

Q25. In class A operation, the input circuit of a JFET is

………. biased

1. forward
2. reverse
3. not
4. none of the above

Answer : 2

Q26. If the gate of a JFET is made less negative, the

width of the conducting channel……….

1. remains the same

2. is decreased
3. is increased
4. none of the above

Answer : 3

Q27. The pinch-off voltage of a JFET is about ……….

1. 5 V
2. 0.6 V
3. 15 V
4. 25 V

Answer : 1


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Q28. The input impedance of a MOSFET is of the order

of ………..

1. Ω
2. a few hundred Ω
3. kΩ
4. several MΩ

Answer : 4

Q29. The gate voltage in a JFET at which drain current

becomes zero is called ……….. voltage

1. saturation
2. pinch-off
3. active
4. cut-off

Answer : 2

Q30. This question will be available soon

Q31. In a FET, there are ……….. pn junctions at the

sides

1. three
2. four
3. ve
4. two

Answer : 4

Q32. The transconductance of a JFET ranges from

……………..

1. 100 to 500 mA/V
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2. 500 to 1000 mA/V

3. 0.5 to 30 mA/V
4. above 1000 mA/V

Answer : 3

Q33. The source terminal of a JEFT corresponds to

………….. of a vacuum tube

1. plate
2. cathode
3. grid
4. none of the above

Answer : 2

Q34. The output characteristics of a JFET closely

resemble the output characteristics of a ………. valve

1. pentode
2. tetrode
3. triode
4. diode

Answer : 1

Q35. If the cross-sectional area of the channel in n-

channel JEFT increases, the drain current ……….

1. is increased
2. is decreased
3. remains the same
4. none of the above

Answer : 1

Q36. The channel of a JFET is between the …………….


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1. gate and drain

2. drain and source
3. gate and source
4. input and output

Answer : 2

Q37. For VGS = 0 V, the drain current becomes constant

when VDS exceeds ………

1. cut off
2. VDD
3. VP
4. o V

Answer : 3

Q38. A certain JFET data sheet gives  VGS(off) = -4 V.

The pinch-off voltage Vp is ……..

1. +4 V
2. -4 V
3. dependent on VGS
4. data insuf cient

Answer : 1

Q39. The constant-current region of a JFET lies

between

1. cut off and saturation

2. cut off and pinch-off
3. o and IDSS
4. pinch-off and breakdown

Answer : 4

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Q40. At cut-off, the JFET channel is ……….

1. at its widest point

2. completely closed by the depletion region
3. extremely narrow
4. reverse baised

Answer : 2

Q41. A MOSFET differs from a JFET mainly because

………………

1. of power rating
2. the MOSFET has two gates
3. the JFET has a pn junction
4. none of the above

Answer : 3

Q42. A certain D-MOSFET is biased at VGS = 0 V. Its

data sheet speci es IDSS = 20mA and VGS(off)  = -5 V.
The value of the drain current is …………

1. 20 mA
2. 0 mA
3. 40 mA
4. 10 mA

Answer : 1

Q43. A n-channel D-MOSFET with a positive VGS is

operating in …………

1. the depletion-mode
2. the enhancement-mode
3. cut off
4. saturation

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Answer : 2

Q44. A certain p-channel E-MOSFET has VGS(th)  =

-2V. If VGS= 0V, the drain current is ……….

Swi

Offeri
and p
servic
AN-EL

1. 0 mA
2. ID(on)
3. maximum
4. IDSS

Answer : 1

Q45. In a common-source JFET ampli er, the output

voltage is …………………

1. 180o out of phase with the input

2. in phase with the input
3. 90o out of phase with the input
4. taken at the source

Answer : 1

Q46. In a certain common-source D-MOSFET

ampli er, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The
voltage gain is …………


1. 1
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2. 11.4
3. 8.75
4. 3.2

Answer : 2

Q47. In a certain CS JFET ampli er,  RD= 1kΩ , RS=

560 Ω , VDD=10V and gm= 4500 μS. If the source
resistor is completely bypassed, the voltage gain is
…………

1. 450
2. 45
3. 2.52
4. 4.5

Answer : 4

Q48. A certain common-source JFET has a voltage gain

of 10. If the source bypass capacitor is removed,
……………….

1. the voltage gain will increase

2. the transconductance will increase
3. the voltage gain will decrease
4. the Q-point will shift

Answer : 3

Q49. A CS JFET ampli er has a load resistance of 10

kΩ ,  RD= 820Ω . If gm= 5mS and Vin= 500 mV, the
output signal voltage is ………..

1. 2.05 V
2. 25 V
3. 0.5 V

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4. 1.89 V

Answer : 4

Q50. If load resistance in the above question (Q.49) is

removed, the output voltage will …………

1. increase
2. decrease
3. stay the same
4. be zero

Answer : 1

Q.51. When not in use, MOSFET pins are kept at the

same potential through the use of …………

1. shipping foil
2. nonconductive foam
3. conductive foam
4. a wrist strap

Answer: 3

Q.52. D-MOSFETs are sometimes used in series to

construct a cascode high-frequency ampli er to
overcome the loss of …………..

1. low output impedance

2. capacitive reactance
3. high input impedance
4. inductive reactance

Answer: 3

Q.53. A “U” shaped, opposite-polarity material built

near a JFET-channel center is called the ……….

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1. gate
2. block
3. drain
4. heat sink

Answer: 1

Q.54. When testing an n-channel D-MOSFET,

resistance G to D =  , resistance G to S =  , resistance
D to SS =   and 500  , depending on the polarity of the
ohmmeter, and resistance D to S = 500  . What is
wrong?

1. short D to S
2. open G to D
3. open D to SS
4. nothing

Answer: 4

Q.55. In the constant-current region, how will the

IDS change in an n-channel JFET?

1. As VGS decreases ID decreases.
2. As VGS increases ID increases
3. As VGS decreases ID remains constant.
4. As VGS increases ID remains constant.

Answer: 1

Q.56. IDSS can be de ned as ………

1. the minimum possible drain current

2. the maximum possible current with VGS held at –4
V


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3. the maximum possible current with VGS held at 0

V
4. the maximum drain current with the source
shorted

Answer: 3

Q.57. The input impedance of a common-gate

con gured JFET is …………

1. very low
2. low
3. high
4. very high

Answer: 1

Q.58. A very simple bias for a D-MOSFET is called ……..

1. self biasing
2. gate biasing
3. zero biasing
4. voltage-divider biasing

Answer: 3

Q.59. With the E-MOSFET, when gate input voltage is

zero, drain current is …..

1. at saturation
2. zero
3. IDSS
4. widening the channel

Answer: 2


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Q.60. With a 30-volt VDD, and an 8-kilohm drain

resistor, what is the E-MOSFET Q point voltage, with
ID = 3 mA?

1. 6 V
2. 10 V
3. 24 V
4. 30 V

Answer: 1

Q.61. When an input signal reduces the channel size,

the process is called …….

1. enhancement
2. substrate connecting
3. gate charge
4. depletion

Answer: 4

Q.62. Which JFET con guration would connect a high-

resistance signal source to a low-resistance load ?

1. source follower
2. common-source
3. common-drain
4. common-gate

Answer: 1

Q.63. When VGS = 0 V, a JFET is……….

1. saturated
2. an analog device
3. an open switch
4. an open switch

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Answer: 1

Q.64. The electrons ow through a p-channel JFET

from ……….. to …………..

1. from source to drain

2. from source to gate
3. from drain to gate
4. from drain to source

Answer: 4

Q.65. When applied input voltage varies the resistance

of a channel, the result is called…………..

1. saturization
2. polarization
3. cutoff
4. eld effect

Answer: 4

Q.66. When is a vertical channel E-MOSFET used?

1. for high frequencies

2. for high voltages
3. for high currents
4. for high resistances

Answer: 3

Q.67. When the JFET is no longer able to control the

current, this point is called the …………

1. breakdown region
2. depletion region
3. saturation point 
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4. pinch-off region

Answer: 1

Q.68.  With a JFET, a ratio of output current change

against an input voltage change is called as ………..

1. transconductance
2. siemens
3. resistivity
4. gain

Answer: 1

Q.69. Which type of JFET bias requires a negative

supply voltage?

1. feedback
2. source
3. gate
4. voltage divider

Answer: 3

Q.70. How will a D-MOSFET input impedance change

with signal frequency?

1. As frequency increases input impedance increases.

2. As frequency increases input impedance is
constant.’
3. As frequency decreases input impedance increases.
4. As frequency decreases input impedance is
constant.

Answer: 3


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Q.71. The type of bias most often used with E-MOSFET

circuits is………….

1. constant current
2. drain-feedback
3. voltage-divider
4. zero biasing

Answer: 2

Q.72. The transconductance curve of a JFET is a graph

of …………… vs ……….

1. IS versus VDS
2. IC versus VCE
3. ID versus VGS
4. ID × RDS

Answer: 3

Q.73. The common-source JFET ampli er has ………..

1. a very high input impedance and a relatively low

voltage gain
2. a high input impedance and a very high voltage
gain
3. a high input impedance and a voltage gain less
than 1
4. no voltage gain

Answer: 1

Q.74. The overall input capacitance of a dual-gate D-

MOSFET is lower because the devices are usually
connected ………..

1. in parallel

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2. with separate insulation

3. with separate inputs
4. in series

Answer: 4

Q.75. Which component is considered to be an “OFF”

devic.

1. transistor
2. JFET
3. D-MOSFET
4. E-MOSFET

Answer: 4

Q.76.  In an n-channel JFET, what will happen at the

pinch-off voltage?

1. the value of VDS at which further increases in

VDS will cause no further increase in ID
2. the value of VGS at which further decreases in
VGS will cause no further increases in ID
3. the value of VDG at which further decreases in
VDG will cause no further increases in ID
4. the value of VDS at which further increases in
VGS will cause no further increases in ID

Answer: 1

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the most comprehensive question bank on the entire

internet.

In addition to reading the questions and answers on my

site, I would suggest you to check the following, on
amazon, as well:

Question Bank in Electronics & Communication

Engineering by Prem R Chadha
A Handbook on Electronics Engineering –
Illustrated Formulae & Key Theory Concepts

Sasmita
Hi! I am Sasmita . At
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